CN103415917A - 施加有底部填料膜的预切割的晶片 - Google Patents

施加有底部填料膜的预切割的晶片 Download PDF

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CN103415917A
CN103415917A CN2012800074606A CN201280007460A CN103415917A CN 103415917 A CN103415917 A CN 103415917A CN 2012800074606 A CN2012800074606 A CN 2012800074606A CN 201280007460 A CN201280007460 A CN 201280007460A CN 103415917 A CN103415917 A CN 103415917A
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bottom filling
silicon
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Y·金
G·黄
R·吉诺
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Henkel American Intellectual Property LLC
Henkel IP and Holding GmbH
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Abstract

本发明提供一种制造具有预先施加的底部填料的半导体的方法，包括：提供在顶侧上具有多个金属凸块的半导体晶片，并任选地，硅通孔垂直穿过所述硅晶片；层合背磨胶带至所述晶片的顶部，覆盖所述金属凸块和所述硅通孔；减薄所述晶片的背侧；将切割胶带安装至所述减薄晶片的背侧，并且将所述硅晶片和所述切割胶带安装至切割框架；移除所述背磨胶带；提供预先切割为适于所述晶片形状的底部填料；将所述底部填料和所述晶片对齐布置，并且层合所述底部填料至所述晶片。

Description

施加有底部填料膜的预切割的晶片
相关申请的交叉引用
本申请要求2011年2月1日提交的美国临时专利申请NO.61/438,327的优先权，其内容在此援引加入本文。
技术领域
本发明涉及一种制造半导体管芯(semiconductor die)的方法。
背景技术
电气和电子设备的微型化和薄型化已经导致对更薄半导体器件和更薄半导体封装的需求。一种制造更薄半导体管芯的方法是从管芯的背侧(无源侧)去除多余的材料。这可以通过从切割得到各个管芯的半导体晶片的背侧去除多余材料更容易地完成。多余晶片的去除通常发生在研磨工艺中，一般称作背侧研磨。
一种制造更小的和更有效的半导体封装(semiconductor package)的方法是利用具有金属凸块阵列接合到封装的有源面的封装，所述金属凸块被布置为与衬底上的接合焊垫相匹配。当金属回流成熔体时，其与接合焊垫连接，形成电气和机械连接。由于凸起的半导体被倒装以接合至它们的衬底，这种金属凸块封装通常被称为“倒装芯片”。
热失配存在于半导体和衬底之间，所以随着反复的热循环，金属互连承受压力，可能导致失效。为抵消这种现象，一种一般称作底部填料(underfill)的封装材料被设置在半导体和衬底之间的围绕金属凸块的空隙中。
半导体封装制造中的当前趋势偏向于在晶片级完成尽可能多的工艺步骤，以允许同时处理多个集成电路，而不是逐个地发生在管芯分割(diesingulation)之后。遗憾地，底部填料应用本身不太适合晶片级工艺，特别是当晶片在研磨步骤中被减薄时，由于减薄的晶片的脆性，操作变得更加困难。
因此，需要有施加晶片级底部填料至减薄的晶片的方法，而不折衷于晶片的脆性。
发明内容
本发明是一种制造具有使用施加的底部填料的减薄半导体晶片的方法，包括：(a)提供在顶侧上具有多个金属凸块的半导体晶片，并任选地，硅通孔垂直穿过所述硅晶片；(b)层合背磨胶带至所述晶片的顶部，覆盖所述金属凸块和所述硅通孔；(c)减薄所述晶片的背侧；(d)将切割胶带安装至所述减薄晶片的背侧，并且将所述硅晶片和所述切割胶带安装至切割框架；(e)移除所述背磨胶带；(f)提供预先切割为适于所述晶片形状的底部填料；(g)将所述底部填料和所述晶片对齐布置，并且将所述底部填料层合至所述晶片。
附图说明
图1a和图1b系列描述了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第一现有技术方案。
图2a和图2b系列描述了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第二现有技术方案。
图3a和图3b系列描述了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第三现有技术方案。
图4a和图4b系列描述了本发明的用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的技术方案。
具体实施方式
晶片是半导体材料，通常为硅、砷化镓、锗或类似的化合物半导体材料。晶片顶侧上的多个金属凸块的形成以及它们的金属成分，是根据工业文献中充分记载的半导体和金属的制造方法制成的。
硅通孔是完全延伸穿过硅晶片的垂直通道，目的是将电路从一个晶片连接至另一晶片。
本发明方法中使用切割胶带的目的是在切割操作中支撑晶片。切割胶带从多个来源可商购获得，并且是以选自在载体上包括热敏、压敏或紫外线敏感粘合剂的形式。载体通常是聚烯烃或聚酰亚胺的柔性衬底。当分别施加热、拉应力或紫外线时，粘合性减小。通常地，剥离衬里(release liner)覆盖粘合剂层，并且可以在使用切割胶带之前即刻容易地移除。
背磨胶带的目的是在晶片减薄工艺中保护和支撑金属凸块和晶片顶面。背磨胶带从多个来源可商购获得，并且是以选自在载体上包括热敏、压敏或紫外线敏感粘合剂的形式。载体通常是聚烯烃或聚酰亚胺的柔性衬底。当分别施加热、拉应力或紫外线时，粘合性减小。通常地，剥离衬里覆盖粘合剂层，并且可以在使用背磨胶带之前即刻容易地移除。背磨操作可以由机械研磨、激光研磨或刻蚀来进行。
已知的是适合用作底部填料化学性质的粘合剂和密封剂可以是以膜的形式，并且制备底部填料膜的方法也是已知的。底部填料的厚度可以被调整以使金属凸块在层合之后可以完全或仅部分地被覆盖。不论在何种情况下，底部填料都被提供以使其完全填充半导体和预定衬底之间的空间。在一个实施方式中，底部填料被提供在载体上，并且由剥离衬里保护。从而，底部填料被提供为三层的形式，其中依次第一层是载体，如柔性的聚烯烃或聚酰亚胺胶带，第二层是底部填料，第三层是剥离衬里。在使用之前即刻，剥离衬里被移除，底部填料通常在仍然附着至载体上时被施加。在向晶片施加底部填料之后，载体被移除。
参考附图对本发明做进一步说明。在图中，显示了切割胶带、硅晶片、金属凸块、底部填料和背磨胶带中的一个或多个元件的集合(assembly)，硅晶片的有源面(包含金属凸块的面)朝上或朝下。所述集合可以在由执行者决定的任意方向上被处理。显示了切割胶带、背磨胶带和底部填料的每一个，而未示出剥离衬里。切割胶带和背磨胶带被提供在载体上，并且在使用后被丢弃。本领域技术人员能够理解剥离衬里通常用来保护切割胶带或背磨胶带的压敏粘合剂，并且仅在使用前移除剥离衬里。被层合至晶片的有源面的底部填料层会继续前进到切割和粘合步骤。
图1a和1b描绘了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第一现有技术方案。制备硅晶片10，在硅晶片的一面(有源面)上具有金属凸块11。金属凸块11被带12覆盖以在晶片减薄时保护晶片的有源面。所述带通常被称为背磨胶带。晶片的背侧被减薄以制造减薄的晶片13。具有背磨胶带12的减薄的晶片13被放置在真空吸盘台17上，同时背磨胶带被移除。底部填料14被层合在晶片的有源面上，围绕和包封金属凸块11。切割胶带15安装至晶片的减薄的背侧上，然后晶片被放置进切割框架(或夹具)16中，用于随后的切割成单个的半导体。这种方法的缺点是在背磨胶带被移除之后，晶片是脆弱的，并且无支撑，直到其层合在切割胶带上并放置进切割框架中。
图2a和图2b描绘了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第二现有技术方案。制备硅晶片10，在硅晶片的一面(有源面)上具有金属凸块11。金属凸块11被覆盖有保护性背磨胶带12。晶片的背侧被减薄以制造减薄的晶片13。切割胶带15安装至晶片的背侧上，晶片被放置在位于真空吸盘台20上的切割框架16中。底部填料14被层合在晶片的有源面上，围绕和包封金属凸块11。这种方法的缺点是底部填料在界面18接触切割框架，导致在层合过程中底部填料起皱。
图3a和图3b描绘了用于制备具有由底部填料支撑的金属凸块的减薄硅晶片的第三现有技术方案。制备硅晶片10，在硅晶片的一面(有源面)上具有金属凸块11。双层带19被设置在硅晶片的有源面上，其中一层是保护性背磨胶带12，第二层是底部填料14，底部填料层接触并覆盖金属凸块11。晶片的背侧被减薄以制造减薄的晶片13。切割胶带15安装至晶片的背侧上，晶片被放置在位于真空吸盘台20上的切割框架16中。双层带19的背磨胶带12被移除，留下底部填料14。这种方法的缺点是背磨胶带和底部填料之间的相互影响。背磨胶带和底部填料层的粘合可以强于底部填料层和晶片的粘合。这会导致在移除背磨胶带期间底部填料层从晶片剥离。此外，晶片的均匀减薄会受背磨胶带的厚度的改变的影响。当底部填料厚度上的变化叠加至背磨胶带的厚度上的变化时，厚度上的总变化增加，而且对减薄后晶片厚度的均匀性具有更有害的影响。
图4a和图4b描绘了本发明的方法：制备具有多个金属凸块11和任选存在的硅通孔21的厚硅晶片10。保护性背磨胶带12被层合至金属凸块和硅晶片的顶面上。用于在随后切割中支撑减薄晶片的切割胶带15被安装至减薄晶片的背侧。具有切割胶带15和背磨胶带12的晶片13被安装进切割框架16中，晶片的顶面朝上，并且切割胶带与切割框架接触。背磨胶带被移除。提供在一侧上具有底部填料14的载体带17。底部填料14被预切割以适于晶片的顶面。底部填料接触晶片、对齐形状并层合到晶片的有源面(具有金属凸块的面)，载体依然完整。在进一步处理之前载体被移除。
从而，在一个实施方式中，本发明是一种制造具有施加的底部填料的减薄半导体晶片的方法，包括：(a)提供在顶侧上具有多个金属凸块的半导体晶片，并任选地，硅通孔垂直穿过硅晶片；(b)层合背磨胶带至晶片的顶部，覆盖金属凸块和硅通孔；(c)减薄晶片的背侧；(d)将切割胶带安装至减薄晶片的背侧，并且将硅晶片和切割胶带安装至切割框架；(e)移除背磨胶带；(f)提供预切割为适于晶片形状的底部填料；(g)将底部填料和晶片对齐布置，并且将底部填料层合至晶片。
这种方法具有两个主要优点：(i)在整个制造步骤中，减薄的晶片由背磨胶带或切割胶带或二者支撑，以及(ii)由于底部填料是预切割为适于晶片的形状，因此没有底部填料碰撞切割框架，消除底部填料层合至晶片期间起皱或造成空隙的可能性。

Claims (1)

1.制造具有施加的底部填料的减薄半导体晶片的方法，包括：
(a)提供在顶侧上具有多个金属凸块的半导体晶片，并任选地，硅通孔垂直穿过所述硅晶片；
(b)层合背磨胶带至所述晶片的顶部，覆盖所述金属凸块和所述硅通孔；
(c)减薄所述晶片的背侧；
(d)将切割胶带安装至所述减薄晶片的背侧，并且将所述硅晶片和所述切割胶带安装至切割框架；
(e)移除所述背磨胶带；
(f)提供预先切割为适于所述晶片形状的底部填料；
(g)将所述底部填料和所述晶片对齐布置，并且将所述底部填料层合至所述晶片。
CN2012800074606A 2011-02-01 2012-01-27 施加有底部填料膜的预切割的晶片 Pending CN103415917A (zh)

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