TWI628784B - 應力釋放影像感測器封裝結構及方法 - Google Patents

應力釋放影像感測器封裝結構及方法 Download PDF

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TWI628784B
TWI628784B TW105104944A TW105104944A TWI628784B TW I628784 B TWI628784 B TW I628784B TW 105104944 A TW105104944 A TW 105104944A TW 105104944 A TW105104944 A TW 105104944A TW I628784 B TWI628784 B TW I628784B
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維吉 歐根賽安
盧振華
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歐普提茲股份有限公司
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Abstract

本發明係揭露一感測器封裝體，該封測器封裝體係包括一具有相對的第一及第二表面之基材。複數個光偵測器係形成於第一表面上或底下並組構成回應於入射在第一表面上的光而產生一或多個信號。複數個接觸墊係形成於第一表面並電性耦接至複數個光偵測器。複數個孔係各形成於第二表面中並延伸經過基材來到接觸墊的一者。傳導引線係各從接觸墊的一者延伸，經過複數個孔的一者，且沿著第二表面。傳導引線係與基材絕緣。一或多個溝道係形成於基材的一周邊部分中，各從第二表面延伸至第一表面。絕緣材料係覆蓋一或多個溝道的側壁。

Description

應力釋放影像感測器封裝結構及方法 相關申請案
此申請案係對於2015年2月24日提申的美國臨時申請案No.62/120,255作權利主張，且其以參考方式併入本文。
發明領域
本發明係有關影像感測器，更特別有關一以降低所引發應力的方式作封裝之影像感測器。
發明背景
矽晶圓係為硬、脆且穩定。然而，矽晶圓只在受處理以於其上形成積體電路(例如摻雜、處理、薄化、添加有材料/結構之層等等)之前為穩定。之後，晶圓將變成不穩定，尤其當晶圓很薄且具有未平衡的結構性支撐時會嚴重地彎曲，使得晶圓極為脆弱且易受到機械性應力損害。
隨著晶圓直徑變大以增強生產力/效率以及晶片變薄以滿足散熱、晶粒堆積、降低電阻及低輪廓裝置的需求，此等大晶圓上的薄晶片係將受到比先前益加更大量值的應力。這些機械應力議題對於影像感測器晶圓(亦即供影像感測器形成其上之晶圓)尤其嚴重。一影像感測器晶圓的 主動側係具有形成於其上之材料及結構的層，其係可包括鈍化、低k介電層、微透鏡、色濾器、傳導電路、光學增強物、光屏蔽物等等。這些層及結構不僅使得矽晶圓不穩定，其本身甚至更易受到相同機械應力且會變成受損。
此外，一影像感測器晶圓的主動側係可被包封一保護性基材，其包括墊高物(堰)結構以使其與晶圓分隔。墊高物係結合至表面層並連同晶圓薄化及切分步驟期間巨量的機械應力之累積而將機械應力導入至表面層，其會造成表面層及/或矽基材上之裂化、脫層及許多其他缺陷。
在該技藝中係已知作一預切(部份切分)以避免/釋放機械應力累積。諸如研磨前切分(DBG)等處理係包括作一部份切割至矽晶圓中，將晶圓的另一側薄化，使用電漿蝕刻來減輕晶圓中的應力累積，然後作最終的單分切割。然而，DBG處理或類似的處理之一限制係在於此處理針對非封裝的半導體矽晶圓。所需要的是一用於與晶圓層級封裝(WLP)程序(亦即積體電路在晶圓單分之前的封裝)相容的機械應力減輕之方法及結構。
藉由一包括一具有相對的第一及第二表面之第一基材之感測器封裝體來解決上述問題及需求，複數個光偵測器係形成於第一基材的第一表面上或底下並組構成回應於入射在第一基材的第一表面上的光而產生一或多個信號，複數個接觸墊係形成於第一基材的第一表面並電性耦接至複數個光偵測器，複數個孔係各形成於第一基材的第 二表面中並延伸經過第一基材來到接觸墊的一者，且傳導引線係各從接觸墊的一者延伸，經過複數個孔的一者，且沿著第一基材的第二表面。傳導引線係與第一基材絕緣。一或多個溝道係形成於第一基材的一周邊部分中，各從第二表面延伸至第一表面。絕緣材料係覆蓋一或多個溝道的側壁。
一用於形成一感測器封裝體之方法係包括提供一感測器晶片，該感測器晶片係包括一具有相對的第一及第二表面之第一基材，複數個光偵測器係形成於第一基材的第一表面上或底下並組構成回應於入射在第一基材的第一表面上的光而產生一或多個信號，且複數個接觸墊係形成於第一基材的第一表面並電性耦接至複數個光偵測器。複數個孔係形成於第一基材的第二表面中，其中複數孔的各者係延伸經過第一基材且來到接觸墊的一者。複數個傳導引線係各從接觸墊的一者延伸，經過複數個孔的一者，且沿著第一基材的第二表面。一或多個溝道係形成於第一基材的一周邊部分中，各從第二表面延伸至第一表面。絕緣材料係形成為覆蓋一或多個溝道的側壁。
一用於形成複數個感測器封裝體之方法係包括提供一感測器晶片，該感測器晶片係包括一具有相對的第一及第二表面之第一基材，及形成於其上之複數個感測器，其中各感測器係包括複數個光偵測器，複數個光偵測器係形成於第一基材的第一表面上或底下並組構成回應於入射在第一基材的第一表面上的光而產生一或多個信號， 且複數個接觸墊係形成於第一基材的第一表面並電性耦接至複數個光偵測器。複數個孔係形成於第一基材的第二表面中，其中複數孔的各者係延伸經過第一基材且來到接觸墊的一者。複數個傳導引線係形成為各從接觸墊的一者延伸，經過複數個孔的一者，且沿著第一基材的第二表面。一堰結構係形成於第一基材的第一表面上及周圍而非複數個光偵測器上方。一第二基材係形成於堰結構上，其中第二基材係延伸於複數個光偵測器上方，且其中堰結構及第二基材係形成用於感測器各者之複數個光偵測器上方的一經密封腔穴。一或多個溝道係在從第二表面延伸之感測器各者的一周邊部分處形成於第一基材中，且進入堰結構中。絕緣材料係形成為覆蓋一或多個溝道的側壁。第一基材係在溝道處單分成分離的晶粒，其中各晶粒係包括感測器的一者。
將檢閱說明書、申請專利範圍及附圖以得知本發明的其他目的及特徵。
1‧‧‧影像感測器晶圓
10‧‧‧半導體基材
12‧‧‧結合墊
14‧‧‧光偵測器
16‧‧‧電路層
18‧‧‧表面層
20‧‧‧色濾器
22‧‧‧影像感測器
24‧‧‧永久保護性基材
26‧‧‧堰結構
28‧‧‧經密封腔穴
30‧‧‧刻劃線
32‧‧‧溝道
32a‧‧‧選用性次級溝道部分
34‧‧‧導縫孔
36‧‧‧鈍化/隔離層
38‧‧‧傳導引線
38a‧‧‧經重新繞佈的接觸墊
40‧‧‧包封劑
42‧‧‧電性互連件
圖1-5是顯示形成本發明的影像感測器之步驟的側剖視圖；圖6A-6F是顯示被形成至矽基材中之溝道的替代性組態之側剖視圖；圖7A-7B是顯示進入矽基材中之導縫孔的替代性組態之側剖視圖；圖8-14是顯示形成本發明的影像感測器封裝體 之步驟的側剖視圖。
發明的詳細描述
本發明係為一感測器封裝體，其中在封裝體的側上具有陡峭(steeping)特徵。陡峭特徵係為自感測器晶圓(例如影像感測器、光感測器、生物特徵感測器等)的背側而非自前側(主動側)作一預切之結果。陡峭特徵係被一層包封劑包封，所以沒有矽及/或鈍化層曝露於外部元件。影像感測器的結合墊係重新繞佈至影像感測器的背側，在其中形成互連凸塊。影像感測器的前側係利用一在感測器主動區域上方形成一腔穴之堰結構而被一永久保護性基材所包封。
圖1至14係顯示用於形成影像感測器總成之程序。該程序首先係提供一影像感測器晶圓1，其具有一半導體基材10，複數個結合墊12以及附有光偵測器(亦即光電二極體)14及用以支援光電二極體14操作的電路層16之主動區域，如圖1所示。光電二極體14回應於入射在感測器主動區域上之光而產生電信號。這些信號終將耦接至結合墊12以供晶片外信號作用(off chip signaling)。
影像感測器1較佳係包括一表面層18，其可包括鈍化，一低k介電層，微透鏡及色濾器20，傳導電路，光學增強物，光屏蔽物等等。如圖2所示含有許多影像感測器22(各具有其自身的光電二極體、電路層、結合墊、及表面層)之影像感測器晶圓係為該技藝所熟知，且本文中不作進一步描述。
感測器主動區域係受到一藉由一堰結構26安裝至基材之永久保護性基材24所包封。保護性基材24較佳係為光學性透明。堰26較佳係藉由聚合物材料的沉積及聚合物材料的移除而形成於光學性透明材料上。黏劑係被施加至堰26，其隨後結合至影像感測器晶圓。堰26及基材24係在影像感測器22的主動區域上方形成一經密封腔穴28，如圖3所示。如圖4所示，位於影像感測器晶圓基材10的背部上之矽係可藉由機械研磨、化學機械研磨(CMP)、濕蝕刻、大氣下游電漿(ADP)、乾化學蝕刻(DEC)或任何其他適當的矽薄化方法而被薄化。在薄化程序之後，可作一選用性電漿蝕刻步驟以釋放晶圓中的應力累積(然而這將不會釋放已累積於表面層18上的所有應力)。
位於影像感測器晶圓基材10背側上之矽的部分係在一用於分離影像感測器22之刻劃線30處被選擇性移除(而形成至少部份地延伸經過基材10之溝道32及延伸經過基材10之導縫孔34以曝露結合墊12)，如圖5所示。矽係利用微影術及電漿蝕刻方法或該技藝已知的任何其他矽蝕刻方法被選擇性移除。影像感測器結合墊12係應藉由導縫孔34從影像感測器晶圓的背側被曝露，各導縫孔34係一路從晶圓背表面延伸至結合墊12的一者。導縫孔34可呈推拔狀或不呈推拔狀。溝道32係可呈推拔狀或不呈推拔狀，並可具有可呈推拔狀或不呈推拔狀且可部份或完全地延伸經過晶圓基材10之選用性次級溝道部分32a，如圖6A至6F的不同組態所示。確切地，圖6A及6B係分別顯示部份地蝕刻經過 矽晶圓之推拔狀及非推拔狀溝道32，其並未一路延伸至且曝露出表面層18。圖6C至6F係顯示溝道推拔的不同變異，其各者係包括一部份地經過晶圓之溝道32，及一路延伸至且曝露出表面層18之溝道32的一次級溝道部分32a。在圖6C-6F的所有組態中，溝道32係在其矽側壁中具有一階步(亦即肩)，其中供溝道部分32a開始。圖7A及7B係分別顯示推拔狀及非推拔狀導縫孔組態。
使用一機械切分器或雷射將溝道32/32a延伸經過表面層18且部份地進入堰26中(亦即使溝道完整地延伸經過矽晶圓及表面層且沿著刻劃線30部份地進入堰中)，如圖8所示。這將減輕表面層上的物理應力並在處理中稍後的單分步驟期間防止其裂化。圖9顯示相同組態，差異在於經過基材10之次級溝道部分32a呈推拔狀。
一層的二氧化矽、氮化矽或任何其他的適當鈍化/隔離層36係可使用諸如物理氣相沉積(PVD)等方法或藉由旋動/噴灑塗覆系統被順應性沉積於矽晶圓的背側上方。鈍化/隔離層36係被形成或選擇性蝕刻，使其襯墊於溝道32及孔34，例外在於：結合墊18在導縫孔34端點處保持曝露，如圖10所示。
傳導材料係利用物理氣相沉積及鍍覆或任何其他適當傳導層沉積方法被沉積於鈍化層36上方。傳導層可為鈦、銅、鎳及金或任何其他適當傳導材料的一堆積體。傳導層係利用光微影術及蝕刻程序被選擇性移除，而留下傳導材料的傳導引線38，其各從結合墊12的一者延伸，沿 著導縫孔側壁，且沿著基材10的背側表面，藉以經由導縫孔34將結合墊12電性重新繞佈至影像感測器背側，如圖11所示。
包封劑40係沉積於基材10的背側上方，而覆蓋晶圓背側且充填溝道32及孔34。包封劑可為一聚合物或其他介電材料。包封劑係利用一光微影術程序被選擇性移除，以曝露傳導引線38的選擇性部分38a(稱為經重新繞佈的接觸墊)，如圖12所示。雖然包封劑顯示成完全地充填所有背側溝道/孔，包封劑係可另為並未完全地充填溝道/孔之背側結構上方的一薄正形層。包封劑係可藉由噴塗作沉積。
電性互連件42係形成於經重新繞佈的接觸墊38a上。電性互連件42係可為球閘陣列(BGA)，經鍍覆凸塊，傳導黏劑凸塊，金鈕凸塊或任何其他的適當互連方法。較佳地，互連凸塊係為銲料球閘陣列。隨後利用機械刃切分設備或任何其他的適當程序來進行經過穿過溝道32的刻劃線之組件的晶圓層級切分/單分，其係延伸經過包封劑40，堰26的部份以及透明基材24。此單分係不涉及切割經過矽基材，且僅部份地經過堰26，如圖13所示。
最終經單分的晶粒感測器封裝體係顯示於圖14。感測器晶粒的側係被包封，所以基材10並沒有被曝露的矽(亦即基材10的側部分係被絕緣層36及包封物40所保護/密封)。並且，一旦堰26及透明基材24在程序中早期形成於其上，感測器主動區域係絕未曝露。
可瞭解：本發明未必限於上述及圖示的實施例， 而是涵蓋落在申請專利範圍的範疇內之任何及所有變異。例如，係可省略堰結構，因此腔穴藉由基材材料的蝕刻而被形成至保護性基材的底表面中。本文中若參照本發明並無意限制任何請求項或請求項條件的範圍，而是僅參照可被一或多個請求項所涵蓋之一或多個特徵。上述的材料、程序及數值範例僅供示範，不應視為限制任何最終的請求項。並且，並非所有方法步驟皆需以所顯示的確切次序進行，而是以容許妥當地形成經封裝的影像感測器之任何次序進行即可。最後，單層的材料係可形成為多重層的此等或類似材料，且反之亦然。
應注意：本文用語“上方”及“上”係皆含括性包括“直接地位於~上”(其間並未配置有中間材料、元件或空間)及“間接地位於~上”(其間配置有中間材料、元件或空間)。同理，“相鄰”用語係包括“直接地相鄰”(其間並未配置有中間材料、元件或空間)及“間接地相鄰”(其間配置有中間材料、元件或空間)。“安裝至”係包括“直接地安裝至”(其間並未配置有中間材料、元件或空間)及“間接地安裝至”(其間沒有中間材料、元件或空間)。且“電性耦接”係包括“直接地電性耦接至”(其間並未有將元件電性連接在一起之中間材料或元件)及“間接地電性耦接至”(其間具有將元件電性連接在一起之中間材料或元件)。例如，形成一元件“於一基材上方”係可包括將元件直接地形成於基材上而其間並沒有中間材料/元件，暨將元件間接地形成於基材上而其間具有一或多個中間材料/元件。

Claims (16)

  1. 一種感測器封裝體，其包含：一第一基材，其具有相對的第一及第二表面，複數個光偵測器，其係形成於該第一基材的該第一表面上或底下並組構成回應於入射在該第一基材的該第一表面上之光而產生一或多個信號，複數個接觸墊，其係形成於該第一基材的該第一表面並電性耦接至該等複數個光偵測器，複數個孔，其係各自形成於該第一基材的該第二表面中並延伸經過該第一基材來到該等接觸墊中的一者，及傳導引線，其係各自從該等接觸墊中的一者延伸，經過該等複數個孔中的一者延伸，且沿著該第一基材的該第二表面延伸，其中該等傳導引線係與該第一基材絕緣；一堰結構，其係形成於該第一基材的該第一表面上及周圍而非該等複數個光偵測器上方；一第二基材，其係配置於該堰結構上並延伸於該等複數個光偵測器上方，其中該堰結構及該第二基材形成該等複數個光偵測器上方的一經密封腔穴；一或多個第一溝道，其係形成於該第一基材的一周邊部分中，各自從該第二表面朝向該第一表面延伸但並未到達該第一表面；一或多個次級溝道，各自從該一或多個第一溝道中之一者延伸至該第一表面，且部份地延伸進入該堰結構但未全部延伸經過該堰結構，其中該一或多個次級溝道具有較該一或多個第一溝道的側向尺寸更小的一側向尺寸；及絕緣材料，其係配置於該一或多個第一溝道及該一或多個次級溝道中，使得未有傳導材料配置於該一或多個第一溝道及該一或多個次級溝道中。
  2. 如請求項1之感測器封裝體，其進一步包含：複數個電連接器，其係各自電性連接至該等傳導引線中的一者。
  3. 如請求項2之感測器封裝體，其進一步包含：一層的絕緣材料，其係配置於該第一基材的該第二表面上方且覆蓋該等傳導引線，例外在於與該等複數個電連接器作電性接觸之接觸墊部分。
  4. 如請求項1之感測器封裝體，其中該等複數個孔中的各者具有一漏斗形橫剖面。
  5. 一種用於形成感測器封裝體之方法，其包含下列步驟：提供一感測器晶片，該感測器晶片包括一具有相對的第一及第二表面之第一基材，形成於該第一基材的該第一表面上或底下並組構成回應於入射在該第一基材的該第一表面上的光而產生一或多個信號之複數個光偵測器，以及形成於該第一基材的該第一表面且電性耦接至該等複數個光偵測器之複數個接觸墊；將複數個孔形成於該第一基材的該第二表面中，其中該等複數個孔中的各者延伸經過該第一基材且來到該等接觸墊中的一者；形成複數個傳導引線，其各自從該等接觸墊中的一者延伸，經過該等複數個孔中的一者延伸，且沿著該第一基材的該第二表面延伸；在該第一基材的該第一表面上及周圍而非該等複數個光偵測器上方形成一堰結構；將一第二基材安裝於該堰結構上，其中該第二基材係延伸於該等複數個光偵測器上方，且其中該堰結構及該第二基材於該等複數個光偵測器上方形成一經密封腔穴；在該第一基材的一周邊部分中形成一或多個第一溝道，其各自從該第二表面朝向該第一表面延伸但並未到達該第一表面；及形成一或多個次級溝道，其係各自從該一或多個第一溝道中之一者延伸至該第一表面，且部份地延伸進入該堰結構但未全部延伸經過該堰結構，其中該一或多個次級溝道具有較該一或多個第一溝道的側向尺寸更小的一側向尺寸；及於該一或多個第一溝道及該一或多個次級溝道中形成絕緣材料，使得未有傳導材料配置於該一或多個第一溝道及該一或多個次級溝道中。
  6. 如請求項5之方法，其中：形成該一或多個第一溝道的步驟是使用一電漿蝕刻而實施；形成該一或多個次級溝道的步驟是使用一機械切分器或一雷射而實施。
  7. 如請求項5之方法，其進一步包含：形成複數個電連接器，其各自電性連接至該等傳導引線中的一者。
  8. 如請求項7之方法，其進一步包含：形成一層的絕緣材料，其係位於該第一基材的該第二表面上方且覆蓋該等傳導引線，例外在於與該等複數個電連接器作電性接觸之接觸墊部分。
  9. 如請求項5之方法，其進一步包含：形成一層的絕緣材料，其係位於該等傳導引線與該第一基材之間。
  10. 如請求項5之方法，其中該等複數個孔中的各者具有一漏斗形橫剖面。
  11. 一種用於形成複數個感測器封裝體之方法，其包含下列步驟：提供一感測器晶片，該感測器晶片包括一具有相對的第一及第二表面之第一基材，及複數個形成於其上之感測器，其中各感測器包括複數個光偵測器，該等複數個光偵測器係形成於該第一基材的該第一表面上或底下並組構成回應於入射在該第一基材的該第一表面上的光而產生一或多個信號，以及形成於該第一基材的該第一表面且電性耦接至該等複數個光偵測器之複數個接觸墊；將複數個孔形成於該第一基材的該第二表面中，其中該等複數孔中的各者係延伸經過該第一基材且來到該等接觸墊中的一者；形成複數個傳導引線，其各自從該等接觸墊中的一者延伸經過該等複數個孔中的一者，且沿著該第一基材的該第二表面延伸；在該第一基材的該第一表面上及該等複數個光偵測器周圍而非上方形成一堰結構；將一第二基材安裝在該堰結構上，其中該第二基材延伸於該等複數個光偵測器上方，且其中該堰結構及該第二基材在用於該等感測器中之各者的複數個光偵測器上方形成一經密封腔穴；在該等感測器中之各者的一周邊部分中形成自該第二表面朝向該第一表面延伸但並未到達該第一表面的進入該第一基材中之一或多個第一溝道；形成各自從該一或多個第一溝道中之一者延伸至該第一表面，且部份地延伸進入該堰結構但未全部延伸經過該堰結構的一或多個次級溝道，其中該一或多個次級溝道具有較該一或多個第一溝道的側向尺寸更小的一側向尺寸；形成絕緣材料於該一或多個第一溝道及該一或多個次級溝道中，使得未有傳導材料配置於該一或多個第一溝道及該一或多個次級溝道中；及將該第一基材單分成該一或多個第一溝道及該一或多個第二溝道處之分離的晶粒，其中各晶粒包括該等感測器中的一者。
  12. 如請求項11之方法，其進一步包含在該單分步驟之前：形成複數個電連接器，其各自電性連接至該等傳導引線中的一者。
  13. 如請求項12之方法，其進一步包含在該單分下列步驟之前：形成一層的絕緣材料，其係位於該第一基材的該第二表面上方並覆蓋該等傳導引線，例外在於與該等複數個電連接器作電性接觸之接觸墊部分。
  14. 如請求項11之方法，其進一步包含在該單分步驟之前：形成一層的絕緣材料，其係位於該等傳導引線中的各者與該第一基材之間。
  15. 如請求項11之方法，其中該等複數個孔中的各者具有一漏斗形橫剖面。
  16. 如請求項11之方法，其中：形成該一或多個第一溝道的步驟是使用一電漿蝕刻而實施；形成該一或多個次級溝道的步驟是使用一機械切分器或一雷射而實施。
TW105104944A 2015-02-24 2016-02-19 應力釋放影像感測器封裝結構及方法 TWI628784B (zh)

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