CN108206195B - 半导体结构的制作方法 - Google Patents

半导体结构的制作方法 Download PDF

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CN108206195B
CN108206195B CN201711385317.1A CN201711385317A CN108206195B CN 108206195 B CN108206195 B CN 108206195B CN 201711385317 A CN201711385317 A CN 201711385317A CN 108206195 B CN108206195 B CN 108206195B
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carrier
wafer
adhesive layer
temporary adhesive
optical element
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CN108206195A (zh
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何彦仕
刘沧宇
林佳升
赖炯霖
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XinTec Inc
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Abstract

一种半导体结构及其制作方法，该半导体结构的制作方法包含下列步骤：使用第一暂时粘着层将第一载体贴附于晶圆的第一表面上；蚀刻晶圆背对第一载体的第二表面，以形成至少一穿孔与至少一沟槽，其中晶圆的焊垫由穿孔裸露；于晶圆的第二表面上、穿孔的壁面上与沟槽的壁面上形成绝缘层；使用第二暂时粘着层将第二载体贴附于晶圆的第二表面上，使得穿孔与沟槽由第二载体覆盖；以及移除第一载体与第一暂时粘着层。本发明可抑制光学元件、间隔元件与晶圆翘曲的现象。

Description

半导体结构的制作方法
技术领域
本发明关于一种半导体结构的制作方法。
背景技术
一般而言，在制作具有影像感测区的半导体结构时，会先将光学玻璃以间隔元件接合于晶圆上，之后才进行有关蚀刻、化学气相沉积(CVD)、物理气相沉积(PVD)、电镀或研磨制程。然而，由于光学玻璃与间隔元件的热扩散系数(Coefficient Thermal Expansion；CTE)不同，在经高温制程(例如化学气相沉积)后可能会造成光学玻璃、间隔元件与晶圆翘曲(Warpage)。
上述的翘曲现象在具有大尺寸影像感测区的半导体结构更为明显。由于间隔元件位在影像感测区外侧，影像感测区越大表示间隔元件对于光学玻璃与晶圆的支撑力越小，因此越容易发生翘曲。如此一来，在切割翘曲的且堆叠的光学玻璃、间隔元件与晶圆后，所形成的晶片封装体的良率难以提升。
发明内容
本发明的一技术态样为一种半导体结构的制作方法。
根据本发明一实施方式，一种半导体结构的制作方法包含下列步骤：a：使用第一暂时粘着层将第一载体贴附于晶圆的第一表面上；b：蚀刻晶圆背对第一载体的第二表面，以形成至少一穿孔与至少一沟槽，其中晶圆的焊垫由穿孔裸露；c：于晶圆的第二表面上、穿孔的壁面上与沟槽的壁面上形成绝缘层；d：使用第二暂时粘着层将第二载体贴附于晶圆的第二表面上，使得穿孔与沟槽由第二载体覆盖；e：移除第一载体与第一暂时粘着层。
在本发明一实施方式中，上述半导体结构的制作方法还包含于绝缘层上与焊垫上形成重布线层。
在本发明一实施方式中，上述步骤a包含使用具有第一波长的第一紫外光照射第一暂时粘着层，使第一暂时粘着层产生粘性。
在本发明一实施方式中，上述步骤e包含使用具有第二波长的第二紫外光照射第一暂时粘着层，以消除第一暂时粘着层的粘性，其中第二波长不同于第一波长。
在本发明一实施方式中，上述步骤d包含使用具有第一波长的第一紫外光照射第二暂时粘着层，使第二暂时粘着层产生粘性。
在本发明一实施方式中，在上述步骤e后，半导体结构的制作方法还包含将具有间隔元件的光学元件设置于晶圆的第一表面上，使得间隔元件位于光学元件与第一表面之间，其中间隔元件覆盖焊垫与沟槽，且围绕晶圆的影像感测区。
在本发明一实施方式中，上述半导体结构的制作方法还包含在光学元件设置于晶圆的第一表面后，移除第二载体与第二暂时粘着层。
在本发明一实施方式中，上述移除第二载体的步骤包含使用具有第二波长的第二紫外光照射第二暂时粘着层，以消除第二暂时粘着层的粘性，其中第二波长不同于第一波长。
在本发明一实施方式中，上述半导体结构的制作方法还包含在移除第二载体与第二暂时粘着层后，形成覆盖重布线层、穿孔与沟槽的阻隔层。
在本发明一实施方式中，上述形成阻隔层的步骤包含以阻隔层填满沟槽。
在本发明一实施方式中，上述半导体结构的制作方法还包含图案化阻隔层，使阻隔层具有裸露重布线层的至少一开口。
在本发明一实施方式中，上述半导体结构的制作方法还包含于阻隔层的开口中的重布线层上形成导电结构。
在本发明一实施方式中，上述半导体结构的制作方法还包含在形成导电结构后，沿沟槽纵向切割光学元件、间隔元件与阻隔层，以形成至少一晶片封装体。
在本发明一实施方式中，上述光学元件是以玻璃制成。
在本发明一实施方式中，上述光学元件的透光度均大于第一载体的透光度与第二载体的透光度。
在本发明一实施方式中，上述光学元件的厚度均小于第一载体的厚度与第二载体的厚度。
在本发明一实施方式中，上述光学元件为抗反射玻璃或红外线玻璃。
在本发明一实施方式中，上述光学元件的材质包含燃料二氧化硅。
本发明的另一技术态样为一种半导体结构。
根据本发明一实施方式，一种半导体结构包含：第一晶片，其一表面具有第一焊垫与第一影像感测区；第一间隔元件，覆盖该第一焊垫，且围绕该第一影像感测区；以及光学元件，设置于该第一间隔元件上且覆盖该第一影像感测区，该光学元件具有顶面与底面，该底面朝向该第一影像感测区，该顶面背对该第一影像感测区，其中该顶面为圆弧状。
在本发明一实施方式中，该光学元件包含：支撑部，位于该第一间隔元件上且具有该底面；以及透镜部，位于该支撑部上且具有该顶面，该透镜部覆盖该第一影像感测区。
在本发明一实施方式中，还包含：第二晶片，与该第一晶片相邻，该第二晶片的一表面具有第二焊垫与第二影像感测区；以及第二间隔元件，覆盖该第二焊垫，且围绕该第二影像感测区，其中该光学元件延伸至该第二间隔元件而覆盖该第二影像感测区，该光学元件的部分该底面的朝向该第二影像感测区，部分该顶面背对该第二影像感测区。
在本发明一实施方式中，该光学元件包含：支撑部，位于该第一间隔元件与该第二间隔元件上，且具有该底面；以及两透镜部，位于该支撑部上且具有该顶面，该两透镜部分别覆盖该第一影像感测区与该第二影像感测区。
在本发明一实施方式中，该光学元件包含：支撑部，位于该第一间隔元件上且围绕出容置空间；以及多个透镜部，实体连接于该支撑部且位于该容置空间中，该多个透镜部与该第一影像感测区重叠，该多个透镜部的其中之一具有该顶面，该多个透镜部的其中之一具有该底面。
在本发明上述实施方式中，由于半导体结构的制作方法在形成穿孔、沟槽与绝缘层前，尚未设置间隔元件与光学元件，而是以第一暂时粘着层将第一载体贴附于晶圆上，让第一载体可对晶圆提供足够的支撑力，避免晶圆因高温而产生翘曲。此外，在形成绝缘层后，可使用第二暂时粘着层将第二载体贴附于晶圆的第二表面上，利用第二载体对晶圆的支撑力，使得第一载体可被移除而不会使晶圆弯曲破裂。由于第一载体移除后已无高温制程，因此将具有间隔元件的光学元件设置于晶圆的第一表面上并不会在后续制程中发生光学元件、间隔元件与晶圆翘曲的现象。
附图说明
图1绘示根据本发明一实施方式的半导体结构的制作方法的流程图。
图2至图10绘示根据本发明一实施方式的半导体结构的制作方法的剖面图。
图11绘示根据本发明一实施方式的晶片封装体的剖面图。
图12绘示根据本发明一实施方式的晶片封装体的剖面图。
图13绘示根据本发明一实施方式的晶片封装体的剖面图。
其中，附图中符号的简单说明如下：
100、100a、100b、100c：晶片封装体；110：第一暂时粘着层；120：第一载体；130：晶圆；130a、130b：晶片；131：穿孔；132：第一表面；133：沟槽；134：第二表面；136、136a：影像感测区；138、138a：焊垫；139：绝缘层；140：绝缘层；150：重布线层；160：第二载体；170：第二暂时粘着层；180、180a、180b：光学元件；181：顶面；182、182a、182b：支撑部；183：底面；184、184a、184b、184c：透镜部；186：容置空间；190、190a：间隔元件；192：粘胶；210：阻隔层；212：开口；220：导电结构；L-L：线段；S1～S5：步骤。
具体实施方式
以下配合图式说明本发明的多个实施方式，为简化图式，一些熟知惯用的结构与元件将以简单示意的方式绘示。
图1绘示根据本发明一实施方式的半导体结构的制作方法的流程图。半导体结构的制作方法包含下列步骤。首先在步骤S1中，使用第一暂时粘着层将第一载体贴附于晶圆的第一表面上。接着在步骤S2中，蚀刻晶圆背对第一载体的第二表面，以形成至少一穿孔与至少一沟槽，其中晶圆的焊垫由穿孔裸露。之后在步骤S3中，于晶圆的第二表面上、穿孔的壁面上与沟槽的壁面上形成绝缘层。接着在步骤S4，使用第二暂时粘着层将第二载体贴附于晶圆的第二表面上，使得穿孔与沟槽由第二载体覆盖。之后在步骤S5中，移除第一载体与第一暂时粘着层。
在以下叙述中，将说明上述各步骤。
图2至图10绘示根据本发明一实施方式的半导体结构的制作方法的剖面图。请参阅图2，晶圆130具有相对的第一表面132与第二表面134、影像感测区136、焊垫138与绝缘层139。影像感测区136、焊垫138与绝缘层139位于第一表面132上。晶圆130的材质可包含硅，例如为硅晶圆。第一暂时粘着层110位于第一载体120与晶圆130之间，也就是说，第一载体120利用第一暂时粘着层110贴附于晶圆130的第一表面132上。第一暂时粘着层110可经不同波长的紫外光照射而产生粘性或消除粘性。在此步骤中，可使用具有第一波长的第一紫外光照射第一暂时粘着层110，使第一暂时粘着层110产生粘性。
第一载体120可对晶圆130提供支撑力，避免晶圆130于后续制程中破裂。此外，第一载体120还可保护晶圆130的影像感测区136与焊垫138，避免于后续制程中损坏。在本实施方式中，第一载体120的材质可以为玻璃或压克力。
同时参阅图2与图3，待第一载体120以第一暂时粘着层110贴附于晶圆130后，可蚀刻晶圆130的第二表面134，以形成至少一穿孔131与至少一沟槽133，使晶圆130的焊垫138由穿孔131裸露。也就是说，穿孔131的位置对应于焊垫138的位置。此外，穿孔131较靠近影像感测区136，沟槽133离影像感测区136较远，且沟槽133至少部分位于两个穿孔131之间。
同时参阅图3与图4，待穿孔131与沟槽133形成后，可于晶圆130的第二表面134上、穿孔131的壁面上与沟槽133的壁面上形成绝缘层140。在此步骤中，绝缘层140可先以化学气相沉积法(CVD)覆盖晶圆130的第二表面134、穿孔131的壁面、焊垫138与沟槽133的壁面，接着以图案化制程去除覆盖焊垫138下表面的绝缘层140，而得到图4的结构。图案化制程可包含曝光、显影、蚀刻等光微影技术(Photolithography)。在本实施方式中，绝缘层140的材质可以为二氧化硅，且绝缘层139的材质可与绝缘层140相同。
同时参阅图4与图5，待绝缘层140形成后，重布线层150可形成于绝缘层140上与焊垫138上，而与焊垫138电性接触。重布线层150的材质可以包含铝，可采用电镀的方式形成，但并不用以限制本发明。
同时参阅图5与图6，待重布线层150形成后，可使用第二暂时粘着层170将第二载体160贴附于晶圆130的第二表面134上，使得穿孔131与沟槽133由第二载体160覆盖。第二暂时粘着层170位于第二载体160与晶圆130之间，也就是说，第二载体160利用第二暂时粘着层170贴附于晶圆130的第二表面134上。第二暂时粘着层170的材质可与第一暂时粘着层110的材质相同。第二暂时粘着层170可经不同波长的紫外光照射而产生粘性或消除粘性。在此步骤中，可使用具有第一波长的第一紫外光照射第二暂时粘着层170，使第二暂时粘着层170产生粘性。
第二载体160可对晶圆130提供支撑力，避免晶圆130于后续制程中破裂。此外，第二载体160还可保护重布线层150，避免于后续制程中损坏。在本实施方式中，第二载体160的材质可以为玻璃或压克力。
同时参阅图6与图7，待第二载体160以第二暂时粘着层170贴附于晶圆130下方后，可移除晶圆130上方的第一载体120与第一暂时粘着层110。在此步骤中，可使用具有第二波长的第二紫外光照射第一暂时粘着层110，以消除第一暂时粘着层110的粘性。上述第二波长不同于第一波长。第一载体120移除后，可重复使用于其他晶圆上，以节省材料成本。
同时参阅图7与图8，待第一载体120与第一暂时粘着层110移除后，可将具有间隔元件190的光学元件180设置于晶圆130的第一表面132上，使得间隔元件190位于光学元件180与第一表面132之间。间隔元件190覆盖焊垫138与沟槽133，且间隔元件190围绕晶圆130的影像感测区136。间隔元件190可利用粘胶192固定于晶圆130的第一表面132上。在间隔元件190接合晶圆130之前，间隔元件190可先设置于光学元件180的表面。
在本实施方式中，间隔元件190的材质可以包含环氧树脂(Epoxy)。光学元件180是以玻璃制成，光学元件180用以供光线穿过，以让其下方的影像感测区136感测。因此，对于光学元件180的物理特性的要求与用来支撑晶圆130的第一载体120(见图6)、第二载体160不同。举例来说，光学元件180的透光度均大于第一载体120的透光度与第二载体160的透光度。此外，光学元件180的厚度可小于第一载体120的厚度与第二载体160的厚度，以降低整个半导体结构的厚度。图7与图8的半导体结构可采晶圆级尺寸(Wafer level)出货，依制造者需求而定。
光学元件180可以为抗反射(AR)玻璃或红外线(IR)玻璃，但并不用以限制本发明。另外，光学元件180的材质可以包含燃料二氧化硅(Fuel silica)。
由于半导体结构的制作方法在形成穿孔131、沟槽133与绝缘层140前，尚未设置间隔元件190与光学元件180，而是以第一暂时粘着层110将第一载体120贴附于晶圆130上，让第一载体120可对晶圆130提供足够的支撑力，避免晶圆130因高温(例如形成绝缘层140的CVD制程)而产生翘曲。此外，在形成绝缘层140后，可使用第二暂时粘着层170将第二载体160贴附于晶圆130的第二表面134上，利用第二载体160对晶圆130的支撑力，使得第一载体120可被移除而不会使晶圆130弯曲破裂。由于第一载体120移除后已无高温制程，因此将具有间隔元件190的光学元件180设置于晶圆130的第一表面132上并不会在后续制程中发生光学元件180、间隔元件190与晶圆130翘曲的现象。
同时参阅图8与图9，待光学元件180设置于晶圆130的第一表面132后，可移除第二载体160与第二暂时粘着层170。在此步骤中，可使用具有第二波长的第二紫外光照射第二暂时粘着层170，以消除第二暂时粘着层170的粘性。第二载体160移除后，可重复使用于其他晶圆上，以节省材料成本。
待移除第二载体160与第二暂时粘着层170后，可形成覆盖重布线层150、穿孔131与沟槽133的阻隔层210。在此步骤中，阻隔层210可填满沟槽133。接着，可图案化阻隔层210，使阻隔层210具有裸露重布线层150的至少一开口212。在本实施方式中，阻隔层210的材质可以包含环氧树脂，例如防焊绿漆(Solder mask)。
同时参阅图9与图10，待阻隔层210的开口212形成后，可于阻隔层210的开口212中的重布线层150上形成导电结构220。导电结构220可以为球栅阵列(Ball Grid Array；BGA)的导电球体(例如锡球)或导电凸块，其形状与材质并不用以限制本发明。
待形成导电结构220后，可沿沟槽133纵向切割光学元件180、间隔元件190与阻隔层210。举例来说，可用刀具沿线段L-L切割光学元件180、间隔元件190与阻隔层210，以形成图10的晶片封装体100。晶圆130经切割制程后可产生至少一个图10的晶片130a。
导电结构220可电性连接外部电子装置(如电路板)，以将信号通过重布线层150传输至晶片封装体100的焊垫138。在本实施方式中，晶片封装体100可以为影像感测晶片(例如CMOS晶片)，但并不用以限制本发明。
图11绘示根据本发明一实施方式的晶片封装体100a的剖面图。晶片封装体100a为半导体结构，其包含晶片130a、间隔元件190与光学元件180a。晶片130a的一表面具有焊垫138与影像感测区136。间隔元件190覆盖焊垫138且围绕影像感测区136。光学元件180a设置于间隔元件190上且覆盖影像感测区136。光学元件180a具有顶面181与底面183，底面183朝向影像感测区136，顶面181背对影像感测区136。与图10实施方式不同的地方在于光学元件180a的顶面181为圆弧状。在本实施方式中，光学元件180a包含支撑部182与透镜部184。支撑部182位于间隔元件190上且具有底面183。透镜部184位于支撑部182上且具有顶面181，且透镜部184覆盖影像感测区136。
图12绘示根据本发明一实施方式的晶片封装体100b的剖面图。晶片封装体100b包含晶片130a、间隔元件190与光学元件180b。与图11实施方式不同的地方在于晶片封装体100b还包含晶片130b与间隔元件190a。晶片130b与晶片130a相邻。晶片130b的一表面具有焊垫138a与影像感测区136a。间隔元件190a覆盖焊垫138a，且围绕影像感测区136a。此外，光学元件180b从间隔元件190延伸至间隔元件190a而覆盖晶片130b的影像感测区136a。光学元件180b的部分底面183的朝向影像感测区136a，部分顶面181背对影像感测区136a。在本实施方式中，光学元件180b包含支撑部182a与两透镜部184a、184b。支撑部182a位于间隔元件190与间隔元件190a上，且具有底面183。透镜部184a、184b位于支撑部182a上且具有顶面181。透镜部184a、184b分别覆盖影像感测区136、136a。
图13绘示根据本发明一实施方式的晶片封装体100c的剖面图。晶片封装体100c包含晶片130a、间隔元件190与光学元件180c。与图11实施方式不同的地方在于光学元件180c包含支撑部182b与多个透镜部184c。支撑部182b位于间隔元件190上且围绕出容置空间186。透镜部184c实体连接于支撑部182b且位于容置空间186中。透镜部184c与影像感测区136重叠。透镜部184c的数量并不用以限制本发明。此外，透镜部184c的其中之一(最上方的透镜部184c)具有顶面181，且透镜部184a的其中之一(最下方的透镜部184c)具有底面183。
以上所述仅为本发明较佳实施例，然其并非用以限定本发明的范围，任何熟悉本项技术的人员，在不脱离本发明的精神和范围内，可在此基础上做进一步的改进和变化，因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。

Claims (15)

1.一种半导体结构的制作方法，其特征在于，包含下列步骤：
a：使用第一暂时粘着层将第一载体贴附于晶圆的第一表面上；
b：蚀刻该晶圆背对该第一载体的第二表面，以形成至少一穿孔与至少一沟槽，其中该晶圆的焊垫由该穿孔裸露；
c：于该晶圆的该第二表面上、该穿孔的壁面上与该沟槽的壁面上形成绝缘层；
d：于该绝缘层上与该焊垫上形成重布线层；
e：使用第二暂时粘着层将第二载体贴附于该晶圆的该第二表面上，使得该穿孔与该沟槽由该第二载体覆盖；
f：移除该第一载体与该第一暂时粘着层；
g：将具有间隔元件的光学元件设置于该晶圆的该第一表面上；
h：在该光学元件设置于该晶圆的该第一表面后，移除该第二载体与该第二暂时粘着层；以及
i：在移除该第二载体与该第二暂时粘着层后，形成覆盖该重布线层、该穿孔与该沟槽的阻隔层。
2.根据权利要求1所述的半导体结构的制作方法，其特征在于，该步骤a包含：
使用具有第一波长的第一紫外光照射该第一暂时粘着层，使该第一暂时粘着层产生粘性。
3.根据权利要求2所述的半导体结构的制作方法，其特征在于，该步骤f包含：
使用具有第二波长的第二紫外光照射该第一暂时粘着层，以消除该第一暂时粘着层的粘性，其中该第二波长不同于该第一波长。
4.根据权利要求1所述的半导体结构的制作方法，其特征在于，该步骤e包含：
使用具有第一波长的第一紫外光照射该第二暂时粘着层，使该第二暂时粘着层产生粘性。
5.根据权利要求4所述的半导体结构的制作方法，其特征在于，该步骤g包含：
使得该间隔元件位于该光学元件与该第一表面之间，其中该间隔元件覆盖该焊垫与该沟槽，且围绕该晶圆的影像感测区。
6.根据权利要求4所述的半导体结构的制作方法，其特征在于，移除该第二载体的步骤包含：
使用具有第二波长的第二紫外光照射该第二暂时粘着层，以消除该第二暂时粘着层的粘性，其中该第二波长不同于该第一波长。
7.根据权利要求1所述的半导体结构的制作方法，其特征在于，该步骤i包含：
以该阻隔层填满该沟槽。
8.根据权利要求1所述的半导体结构的制作方法，其特征在于，还包含：
图案化该阻隔层，使该阻隔层具有裸露该重布线层的至少一开口。
9.根据权利要求8所述的半导体结构的制作方法，其特征在于，还包含：
于该阻隔层的该开口中的该重布线层上形成导电结构。
10.根据权利要求9所述的半导体结构的制作方法，其特征在于，还包含：
在形成该导电结构后，沿该沟槽纵向切割该光学元件、该间隔元件与该阻隔层，以形成至少一晶片封装体。
11.根据权利要求1所述的半导体结构的制作方法，其特征在于，该光学元件是以玻璃制成。
12.根据权利要求1所述的半导体结构的制作方法，其特征在于，该光学元件的透光度均大于该第一载体的透光度与该第二载体的透光度。
13.根据权利要求1所述的半导体结构的制作方法，其特征在于，该光学元件的厚度均小于该第一载体的厚度与该第二载体的厚度。
14.根据权利要求1所述的半导体结构的制作方法，其特征在于，该光学元件为抗反射玻璃或红外线玻璃。
15.根据权利要求1所述的半导体结构的制作方法，其特征在于，该光学元件的材质包含燃料二氧化硅。
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