JP6180567B2 - 応力解放式画像センサパッケージ構造及び方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 108
- 239000004020 conductor Substances 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 17
- 239000002344 surface layer Substances 0.000 description 13
- 239000008393 encapsulating agent Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bond pad Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L27/14601—Structural or functional details thereof
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Description
本出願は、引用により本明細書に組み込まれている2015年2月24日出願の米国特許仮出願第62/120,255号の利益を主張するものである。
10 半導体基板
12 結合パッド
14 光検知器
16 回路層
Claims (16)
- 対向する第1及び第2表面を有する第1基板と、
前記第1基板の前記第1表面の上又は下に形成され、かつ該第1基板の該第1表面上に入射する光に応答して1又は2以上の信号を生成するように構成された複数の光検知器と、
前記第1基板の前記第1表面に形成され、かつ前記複数の光検知器に電気的に結合された複数の導体パッドと、
各々が前記第1基板の前記第2表面の中へ形成され、かつ該第1基板を通って前記導体パッドのうちの1つに延びる複数の孔と、
各々が前記導体パッドのうちの1つから前記複数の孔のうちの1つを通って前記第1基板の前記第2表面に沿って延び、該第1基板から絶縁された導電リードと、
前記第1基板の前記第1表面上に形成され、かつ前記複数の光検知器の上ではなくその周りに形成されたダム構造と、
前記ダム構造上に配置され、かつ前記複数の光検知器の上を延びる第2基板であって、該ダム構造及び該第2基板が、該複数の光検知器の上に密封空洞を形成する前記第2基板と、
前記第1基板の周囲部分の中に形成され、各々が前記第2表面から前記第1表面に向かうが、該第1表面には到達しないで延びる1又は2以上の第1トレンチと、
前記1又は2以上の第1トレンチの1つから前記第1表面まで各々延び、かつ部分的に前記ダム構造内を延びるが、前記ダム構造を完全には貫通していない1又は2以上の第2トレンチであって、前記1又は2以上の第1トレンチの横寸法よりもより狭い横寸法を有する前記1又は2以上の第2トレンチと、
導電性材料が前記1又は2以上の第1トレンチ及び前記1又は2以上の第2トレンチ内に配置されないようにして、前記1又は2以上の第1トレンチ及び前記1又は2以上の第2トレンチ内に配置された絶縁材料と、
を含むことを特徴とするセンサパッケージ。 - 各々が前記導電リードのうちの1つに電気的に接続された複数の電気コネクタ、
を更に含むことを特徴とする請求項1に記載のセンサパッケージ。 - 前記第1基板の前記第2表面の上に配置され、かつ前記導電リードを前記複数の電気コネクタと電気的に接触するその導体パッド部分を除いて覆う絶縁材料の層、
を更に含むことを特徴とする請求項2に記載のセンサパッケージ。 - 前記複数の孔の各々が、漏斗形状断面を有することを特徴とする請求項1に記載のセンサパッケージ。
- センサパッケージを形成する方法であって、
対向する第1及び第2表面を有する第1基板と、該第1基板の該第1表面の上又は下に形成され、かつ該第1基板の該第1表面上に入射する光に応答して1又は2以上の信号を生成するように構成された複数の光検知器と、該第1基板の該第1表面に形成され、かつ該複数の光検知器に電気的に結合された複数の導体パッドとを含むセンサチップを与える段階と、
前記第1基板の前記第2表面の中に各々が該第1基板を通って前記導体パッドのうちの1つに延びる複数の孔を形成する段階と、
各々が前記導体パッドのうちの1つから前記複数の孔のうちの1つを通って前記第1基板の前記第2表面に沿って延びる複数の導電リードを形成する段階と、
前記第1基板の前記第1表面上に、かつ前記複数の光検出器の上ではなくその周りにダム構造を形成する段階と、
第2基板を前記ダム構造上に装着する段階であって、該第2基板が、前記複数の光検出器の上を延び、該ダム構造及び該第2基板が、該複数の光検出器の上に密封空洞を形成する前記装着する段階と、
前記第1基板の周囲部分の中に各々が前記第2表面から前記第1表面に向かうが、前記第1表面に到達しない1又は2以上の第1トレンチを形成する段階と、
前記1又は2以上の第1トレンチの1つから前記第1表面まで各々延び、かつ部分的に前記ダム構造内を延びるが、前記ダム構造を完全には貫通しない1又は2以上の第2トレンチを形成する段階であって、前記1又は2以上の第1トレンチの横寸法よりもより狭い横寸法を有する前記1又は2以上の第2トレンチを形成する段階と、
導電性材料が前記1又は2以上の第1トレンチ内及び前記1又は2以上の第2トレンチ内に配置されないようにして、前記1又は2以上の第1トレンチ及び前記1又は2以上の第2トレンチ内に絶縁材料を形成する段階と、
を含むことを特徴とする方法。 - 前記1つ又は2つ以上の第1トレンチを形成する段階が、プラズマエッチングを使用して達成され、
前記1つ又は2つ以上の第2トレンチを形成する段階が、機械的ダイスカット機又はレーザを使用して達成される、
ことを特徴とする請求項5に記載の方法。 - 各々が前記導電リードのうちの1つに電気的に接続された複数の電気コネクタを形成する段階、
を更に含むことを特徴とする請求項5に記載の方法。 - 前記第1基板の前記第2表面の上にあり、前記導電リードを前記複数の電気コネクタと電気的に接触するその導体パッド部分を除いて覆う絶縁材料の層を形成する段階、
を更に含むことを特徴とする請求項7に記載の方法。 - 前記導電リードの各々と前記第1基板との間に絶縁材料の層を形成する段階、
を更に含むことを特徴とする請求項5に記載の方法。 - 前記複数の孔の各々が、漏斗形状断面を有することを特徴とする請求項5に記載の方法。
- 複数のセンサパッケージを形成する方法であって、
対向する第1及び第2表面を有する第1基板と、そこに形成された複数のセンサであって、各センサが、該第1基板の該第1表面の上又は下に形成されて該第1基板の該第1表面上に入射する光に応答して1又は2以上の信号を生成するように構成された複数の光検知器と、該第1基板の該第1表面に形成され、かつ該複数の光検知器と電気的に結合された複数の導体パッドとを含む前記複数のセンサとを含むセンサチップを与える段階と、
前記第1基板の前記第2表面の中に各々が該第1基板を通って前記導体パッドのうちの1つに延びる複数の孔を形成する段階と、
各々が前記導体パッドのうちの1つから前記複数の孔のうちの1つを通って前記第1基板の前記第2表面に沿って延びる複数の導電リードを形成する段階と、
前記第1基板の前記第1表面上に、かつ前記複数の光検知器の上ではなくその周りにダム構造を形成する段階と、
第2基板を前記ダム構造上に装着する段階であって、該第2基板が、前記複数の光検知器の上を延び、該ダム構造及び該第2基板が、前記センサの各々に対して該複数の光検知器の上に密封空洞を形成する前記装着する段階と
前記センサの各々の周囲部分において前記第1基板の中に前記第2表面から前記第1表面に向かうが、前記複数の光検出器表面には到達しない1又は2以上の第1トレンチを形成する段階と、
前記1又は2以上の第1トレンチの1つから前記第1表面まで各々延び、かつ部分的に前記ダム構造内を延びるが、前記ダム構造を完全には貫通しない1又は2以上の第2トレンチを形成する段階であって、前記1又は2以上の第1トレンチの横寸法よりもより狭い横寸法を有する前記1又は2以上の第2トレンチを形成する段階と、
導電性材料が前記1又は2以上の第1トレンチ内及び前記1又は2以上の第2トレンチ内に配置されないようにして、前記1又は2以上の第1トレンチ及び前記1又は2以上の第2トレンチ内に絶縁材料を形成する段階と、
前記1又は2以上の第1トレンチ及び前記1又は2以上の第2トレンチにおいて前記第1基板を各ダイが前記センサのうちの1つを含む個別のダイに単体化する段階と、
を含むことを特徴とする方法。 - 前記単体化の前に、
各々が前記導電リードのうちの1つに電気的に接続された複数の電気コネクタを形成する段階、
を更に含むことを特徴とする請求項11に記載の方法。 - 前記単体化の前に、
前記第1基板の前記第2表面の上にあり、かつ前記導電リードを前記複数の電気コネクタと電気的に接触するその導体パッド部分を除いて覆う絶縁材料の層を形成する段階、
を更に含むことを特徴とする請求項12に記載の方法。 - 前記単体化の前に、
前記導電リードの各々と前記第1基板との間に絶縁材料の層を形成する段階、
を更に含むことを特徴とする請求項11に記載の方法。 - 前記複数の孔の各々が、漏斗形状断面を有することを特徴とする請求項11に記載の方法。
- 前記1つ又は2つ以上の第1トレンチを形成する段階が、プラズマエッチングを使用して達成され、
前記1つ又は2つ以上の第2トレンチを形成する段階が、機械的ダイスカット機又はレーザを使用して達成される、
ことを特徴とする請求項11に記載の方法。
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