WO2004012226A3 - Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur - Google Patents

Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur Download PDF

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Publication number
WO2004012226A3
WO2004012226A3 PCT/FR2003/002312 FR0302312W WO2004012226A3 WO 2004012226 A3 WO2004012226 A3 WO 2004012226A3 FR 0302312 W FR0302312 W FR 0302312W WO 2004012226 A3 WO2004012226 A3 WO 2004012226A3
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WIPO (PCT)
Prior art keywords
making
semiconductor wafer
polymer film
conductive polymer
anisotropic conductive
Prior art date
Application number
PCT/FR2003/002312
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English (en)
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WO2004012226A2 (fr
Inventor
Jean-Charles Souriau
Pierre Renard
Jean Brun
Original Assignee
Commissariat Energie Atomique
Jean-Charles Souriau
Pierre Renard
Jean Brun
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Publication date
Application filed by Commissariat Energie Atomique, Jean-Charles Souriau, Pierre Renard, Jean Brun filed Critical Commissariat Energie Atomique
Priority to EP03748222A priority Critical patent/EP1523762A2/fr
Priority to US10/488,939 priority patent/US7026239B2/en
Publication of WO2004012226A2 publication Critical patent/WO2004012226A2/fr
Publication of WO2004012226A3 publication Critical patent/WO2004012226A3/fr

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

L'invention concerne un procédé de fabrication de film polymère conducteur anisotrope (23, 24) sur une tranche de semi-conducteur (T) comprenant, sur une face, une couche de passivation (12) dans laquelle est pratiquée au moins une ouverture laissant apparaître un plot de connexion (11). L'invention s'applique à la formation de composants (puces, circuits intégrés) à haute densité d'interconnexions.
PCT/FR2003/002312 2002-07-24 2003-07-22 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur WO2004012226A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03748222A EP1523762A2 (fr) 2002-07-24 2003-07-22 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur
US10/488,939 US7026239B2 (en) 2002-07-24 2003-07-22 Method for making an anisotropic conductive polymer film on a semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/09378 2002-07-24
FR0209378A FR2842943B1 (fr) 2002-07-24 2002-07-24 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur

Publications (2)

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WO2004012226A2 WO2004012226A2 (fr) 2004-02-05
WO2004012226A3 true WO2004012226A3 (fr) 2004-04-08

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PCT/FR2003/002312 WO2004012226A2 (fr) 2002-07-24 2003-07-22 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur

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US (1) US7026239B2 (fr)
EP (1) EP1523762A2 (fr)
FR (1) FR2842943B1 (fr)
WO (1) WO2004012226A2 (fr)

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US8518304B1 (en) 2003-03-31 2013-08-27 The Research Foundation Of State University Of New York Nano-structure enhancements for anisotropic conductive material and thermal interposers
FR2857780B1 (fr) * 2003-07-18 2005-09-09 Commissariat Energie Atomique Procede de fabrication de film conducteur anisotrope sur un substrat
FR2866753B1 (fr) * 2004-02-25 2006-06-09 Commissariat Energie Atomique Dispositif microelectronique d'interconnexion a tiges conductrices localisees
US7785494B2 (en) * 2007-08-03 2010-08-31 Teamchem Company Anisotropic conductive material
KR101485105B1 (ko) * 2008-07-15 2015-01-23 삼성전자주식회사 반도체 패키지
US9677042B2 (en) 2010-10-08 2017-06-13 Terumo Bct, Inc. Customizable methods and systems of growing and harvesting cells in a hollow fiber bioreactor system
KR101513642B1 (ko) * 2013-08-21 2015-04-20 엘지전자 주식회사 반도체 디바이스
JP6633522B2 (ja) 2013-11-16 2020-01-22 テルモ ビーシーティー、インコーポレーテッド バイオリアクターにおける細胞増殖
EP3122866B1 (fr) 2014-03-25 2019-11-20 Terumo BCT, Inc. Remplacement passif de milieu
EP3198006B1 (fr) 2014-09-26 2021-03-24 Terumo BCT, Inc. Alimentation programmée
JP6412587B2 (ja) * 2014-12-19 2018-10-24 富士フイルム株式会社 多層配線基板
WO2017004592A1 (fr) 2015-07-02 2017-01-05 Terumo Bct, Inc. Croissance cellulaire à l'aide de stimuli mécaniques
US11965175B2 (en) 2016-05-25 2024-04-23 Terumo Bct, Inc. Cell expansion
US11104874B2 (en) 2016-06-07 2021-08-31 Terumo Bct, Inc. Coating a bioreactor
US11685883B2 (en) 2016-06-07 2023-06-27 Terumo Bct, Inc. Methods and systems for coating a cell growth surface
JP7393945B2 (ja) 2017-03-31 2023-12-07 テルモ ビーシーティー、インコーポレーテッド 細胞増殖
US11624046B2 (en) 2017-03-31 2023-04-11 Terumo Bct, Inc. Cell expansion
KR102608888B1 (ko) * 2019-06-04 2023-12-01 (주)포인트엔지니어링 전기접속용 양극산화막 및 광소자 디스플레이 및 광소자 디스플레이 제조 방법

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WO1999005717A1 (fr) * 1997-07-22 1999-02-04 Commissariat A L'energie Atomique Procede de fabrication d'un film conducteur anisotrope a inserts conducteurs
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Also Published As

Publication number Publication date
WO2004012226A2 (fr) 2004-02-05
EP1523762A2 (fr) 2005-04-20
FR2842943A1 (fr) 2004-01-30
US20040241932A1 (en) 2004-12-02
US7026239B2 (en) 2006-04-11
FR2842943B1 (fr) 2005-07-01

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