FR2842943B1 - Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur - Google Patents

Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur

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Publication number
FR2842943B1
FR2842943B1 FR0209378A FR0209378A FR2842943B1 FR 2842943 B1 FR2842943 B1 FR 2842943B1 FR 0209378 A FR0209378 A FR 0209378A FR 0209378 A FR0209378 A FR 0209378A FR 2842943 B1 FR2842943 B1 FR 2842943B1
Authority
FR
France
Prior art keywords
semiconductor wafer
polymer film
conductive polymer
anisotropic conductive
manufacturing anisotropic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0209378A
Other languages
English (en)
Other versions
FR2842943A1 (fr
Inventor
Jean Charles Souriau
Pierre Renard
Jean Brun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0209378A priority Critical patent/FR2842943B1/fr
Priority to US10/488,939 priority patent/US7026239B2/en
Priority to EP03748222A priority patent/EP1523762A2/fr
Priority to PCT/FR2003/002312 priority patent/WO2004012226A2/fr
Publication of FR2842943A1 publication Critical patent/FR2842943A1/fr
Application granted granted Critical
Publication of FR2842943B1 publication Critical patent/FR2842943B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
FR0209378A 2002-07-24 2002-07-24 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur Expired - Fee Related FR2842943B1 (fr)

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FR0209378A FR2842943B1 (fr) 2002-07-24 2002-07-24 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur
US10/488,939 US7026239B2 (en) 2002-07-24 2003-07-22 Method for making an anisotropic conductive polymer film on a semiconductor wafer
EP03748222A EP1523762A2 (fr) 2002-07-24 2003-07-22 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur
PCT/FR2003/002312 WO2004012226A2 (fr) 2002-07-24 2003-07-22 Procede de fabrication de film polymere conducteur anisotrope sur tranche de semi-conducteur

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8518304B1 (en) 2003-03-31 2013-08-27 The Research Foundation Of State University Of New York Nano-structure enhancements for anisotropic conductive material and thermal interposers
FR2857780B1 (fr) * 2003-07-18 2005-09-09 Commissariat Energie Atomique Procede de fabrication de film conducteur anisotrope sur un substrat
FR2866753B1 (fr) * 2004-02-25 2006-06-09 Commissariat Energie Atomique Dispositif microelectronique d'interconnexion a tiges conductrices localisees
US7785494B2 (en) * 2007-08-03 2010-08-31 Teamchem Company Anisotropic conductive material
KR101485105B1 (ko) * 2008-07-15 2015-01-23 삼성전자주식회사 반도체 패키지
EP2625264B1 (fr) 2010-10-08 2022-12-07 Terumo BCT, Inc. Procédés et systèmes de culture et de récolte de cellules dans un système de bioréacteur à fibres creuses avec conditions de régulation
KR101513642B1 (ko) * 2013-08-21 2015-04-20 엘지전자 주식회사 반도체 디바이스
WO2015073913A1 (fr) 2013-11-16 2015-05-21 Terumo Bct, Inc. Expansion de cellules dans un bioréacteur
US11008547B2 (en) 2014-03-25 2021-05-18 Terumo Bct, Inc. Passive replacement of media
US20160090569A1 (en) 2014-09-26 2016-03-31 Terumo Bct, Inc. Scheduled Feed
CN107113984B (zh) * 2014-12-19 2019-06-04 富士胶片株式会社 多层配线基板
WO2017004592A1 (fr) 2015-07-02 2017-01-05 Terumo Bct, Inc. Croissance cellulaire à l'aide de stimuli mécaniques
EP3464565A4 (fr) 2016-05-25 2020-01-01 Terumo BCT, Inc. Expansion cellulaire
US11104874B2 (en) 2016-06-07 2021-08-31 Terumo Bct, Inc. Coating a bioreactor
US11685883B2 (en) 2016-06-07 2023-06-27 Terumo Bct, Inc. Methods and systems for coating a cell growth surface
US11629332B2 (en) 2017-03-31 2023-04-18 Terumo Bct, Inc. Cell expansion
US11624046B2 (en) 2017-03-31 2023-04-11 Terumo Bct, Inc. Cell expansion
KR102608888B1 (ko) * 2019-06-04 2023-12-01 (주)포인트엔지니어링 전기접속용 양극산화막 및 광소자 디스플레이 및 광소자 디스플레이 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543585A (en) * 1994-02-02 1996-08-06 International Business Machines Corporation Direct chip attachment (DCA) with electrically conductive adhesives
FR2726397B1 (fr) * 1994-10-28 1996-11-22 Commissariat Energie Atomique Film conducteur anisotrope pour la microconnectique
FR2766618B1 (fr) * 1997-07-22 2000-12-01 Commissariat Energie Atomique Procede de fabrication d'un film conducteur anisotrope a inserts conducteurs
JP2001223240A (ja) * 2000-02-10 2001-08-17 Nitto Denko Corp 半導体装置
US6803303B1 (en) * 2002-07-11 2004-10-12 Micron Technology, Inc. Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts

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WO2004012226A3 (fr) 2004-04-08
US7026239B2 (en) 2006-04-11
WO2004012226A2 (fr) 2004-02-05
FR2842943A1 (fr) 2004-01-30
US20040241932A1 (en) 2004-12-02
EP1523762A2 (fr) 2005-04-20

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