TWI338196B - - Google Patents

Download PDF

Info

Publication number
TWI338196B
TWI338196B TW095132736A TW95132736A TWI338196B TW I338196 B TWI338196 B TW I338196B TW 095132736 A TW095132736 A TW 095132736A TW 95132736 A TW95132736 A TW 95132736A TW I338196 B TWI338196 B TW I338196B
Authority
TW
Taiwan
Prior art keywords
photoresist
film
forming composition
pattern
group
Prior art date
Application number
TW095132736A
Other languages
English (en)
Chinese (zh)
Other versions
TW200728923A (en
Inventor
Yoshinori Sakamoto
Naoki Yamashita
Kiyoshi Ishikawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200728923A publication Critical patent/TW200728923A/zh
Application granted granted Critical
Publication of TWI338196B publication Critical patent/TWI338196B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1039—Surface deformation only of sandwich or lamina [e.g., embossed panels]
    • Y10T156/1041—Subsequent to lamination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Silicon Polymers (AREA)
TW095132736A 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method TW200728923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005262009A JP5000112B2 (ja) 2005-09-09 2005-09-09 ナノインプリントリソグラフィによるパターン形成方法

Publications (2)

Publication Number Publication Date
TW200728923A TW200728923A (en) 2007-08-01
TWI338196B true TWI338196B (enExample) 2011-03-01

Family

ID=37835663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132736A TW200728923A (en) 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method

Country Status (6)

Country Link
US (1) US20090263631A1 (enExample)
JP (1) JP5000112B2 (enExample)
KR (1) KR20080034983A (enExample)
CN (1) CN101258018B (enExample)
TW (1) TW200728923A (enExample)
WO (1) WO2007029542A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505925B (zh) * 2011-07-21 2015-11-01 Toshiba Kk 壓印方法及壓印系統

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE544093T1 (de) 2006-11-01 2012-02-15 Koninkl Philips Electronics Nv Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske
JP5362186B2 (ja) * 2007-03-24 2013-12-11 株式会社ダイセル ナノインプリント用樹脂組成物
JP5269449B2 (ja) * 2007-03-24 2013-08-21 株式会社ダイセル ナノインプリント用硬化性樹脂組成物
JP2009020962A (ja) 2007-07-12 2009-01-29 Canon Inc 微細パターンの形成方法及びスタンパ
JP2009037696A (ja) * 2007-08-02 2009-02-19 Toshiba Corp インプリント方法
JP5387814B2 (ja) * 2007-08-30 2014-01-15 学校法人東京理科大学 ３次元モールドの製造方法
KR101375445B1 (ko) * 2007-11-07 2014-03-17 쇼와 덴코 가부시키가이샤 에폭시기 함유 오르가노실록산 화합물, 전사 재료용 경화성 조성물 및 상기 조성물을 사용한 미세 패턴 형성 방법
WO2009069465A1 (ja) * 2007-11-30 2009-06-04 Showa Denko K.K. 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法
JP5328263B2 (ja) * 2008-03-18 2013-10-30 昭和電工株式会社 磁気記録媒体の製造方法、磁気記録媒体、及び磁気記録再生装置
JP2009226660A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp ドライエッチングによるパターニング方法及びそれに用いるモールド並びにインクジェットヘッドの製造方法
WO2009141774A1 (en) * 2008-05-20 2009-11-26 Koninklijke Philips Electronics N.V. Aqueous curable imprintable medium and patterned layer forming method
JP5438285B2 (ja) * 2008-05-23 2014-03-12 昭和電工株式会社 転写材料用硬化性組成物および微細パターン形成方法
JP2010093218A (ja) * 2008-09-11 2010-04-22 Fujifilm Corp 感光性組成物および基板の加工基板の製造方法。
JP4990866B2 (ja) 2008-10-08 2012-08-01 昭和電工株式会社 磁気記録媒体の製造方法および磁気記録再生装置
KR101457185B1 (ko) * 2008-10-09 2014-10-31 서울대학교산학협력단 진공효과를 이용한 고분자 전구체의 나노기공 내 삽입방법 및 이를 이용한 나노패턴의 정밀 복제방법
EP2345676A4 (en) * 2008-10-31 2012-12-05 Showa Denko Kk HARDENABLE COMPOSITION FOR A TRANSMISSION MATERIAL AND STRUCTURAL FORMING METHOD
KR20110120918A (ko) 2009-01-29 2011-11-04 쇼와 덴코 가부시키가이샤 전사 재료용 경화성 조성물 및 (메트)아크릴로일기 함유 우레아 화합물
TWI415736B (zh) * 2009-04-10 2013-11-21 獨立行政法人科學技術振興機構 Pattern formation method
JP5445743B2 (ja) * 2009-04-14 2014-03-19 日産化学工業株式会社 光インプリント用被膜形成用組成物
KR100935640B1 (ko) 2009-04-20 2010-01-07 서울대학교산학협력단 부분경화를 이용한 계층적 미세 구조물 형성방법
JP5563243B2 (ja) * 2009-06-01 2014-07-30 キヤノン株式会社 インプリント装置、および、物品の製造方法
CN101923282B (zh) 2009-06-09 2012-01-25 清华大学 纳米压印抗蚀剂及采用该纳米压印抗蚀剂的纳米压印方法
JP5393282B2 (ja) * 2009-06-17 2014-01-22 東京応化工業株式会社 ナノインプリント用組成物およびパターン形成方法
TWI391418B (zh) * 2009-06-19 2013-04-01 Hon Hai Prec Ind Co Ltd 奈米壓印抗蝕劑及採用該奈米壓印抗蝕劑的奈米壓印方法
EP2461350B1 (en) * 2009-07-29 2018-02-28 Nissan Chemical Industries, Ltd. Use of a composition for forming resist underlayer film for nanoimprint lithography
KR101498530B1 (ko) * 2009-08-25 2015-03-04 닛산 가가쿠 고교 가부시키 가이샤 고경도 임프린트 재료
JP5448649B2 (ja) * 2009-08-31 2014-03-19 東京応化工業株式会社 感光性樹脂組成物
WO2011049078A1 (ja) * 2009-10-22 2011-04-28 日産化学工業株式会社 ケイ素化合物を用いる膜形成組成物
KR100974288B1 (ko) * 2010-01-13 2010-08-05 한국기계연구원 나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 이를 이용한 ｌｅｄ 소자의 제조방법
WO2011132616A1 (ja) * 2010-04-19 2011-10-27 日産化学工業株式会社 高耐擦傷性インプリント材料
CN102279517A (zh) * 2010-06-14 2011-12-14 清华大学 纳米压印方法
TWI386304B (zh) * 2010-06-25 2013-02-21 Hon Hai Prec Ind Co Ltd 奈米壓印方法
JP2012009742A (ja) * 2010-06-28 2012-01-12 Toshiba Corp パターン形成方法及びインプリント材料
JP5762245B2 (ja) * 2010-10-20 2015-08-12 株式会社トクヤマ 光硬化性ナノインプリント用組成物、該組成物を用いたパターンの形成方法、及び該組成物の硬化体を有するナノインプリント用レプリカ金型
SG188504A1 (en) 2010-10-20 2013-05-31 Tokuyama Corp Photo-curable nanoimprint composition, method for forming pattern using the composition, and nanoimprint replica mold comprising cured product of composition
US9233840B2 (en) * 2010-10-28 2016-01-12 International Business Machines Corporation Method for improving self-assembled polymer features
JP5580800B2 (ja) * 2010-10-29 2014-08-27 東京応化工業株式会社 積層体、およびその積層体の分離方法
WO2012086959A2 (ko) * 2010-12-20 2012-06-28 주식회사 동진쎄미켐 프린팅 프로세스용 광경화성 수지 조성물
JP5915862B2 (ja) * 2010-12-22 2016-05-11 日産化学工業株式会社 ハードディスク用被膜形成組成物
JP2012141533A (ja) * 2011-01-06 2012-07-26 Canon Inc ワイヤーグリッド偏光板の製造方法およびワイヤーグリッド偏光板
WO2012096071A1 (ja) 2011-01-13 2012-07-19 丸善石油化学株式会社 光インプリント用樹脂組成物、パターン形成方法及びエッチングマスク
US20140061970A1 (en) * 2011-02-15 2014-03-06 Dic Corporation Nanoimprint curable composition, nanoimprint-lithographic molded product, and method for forming pattern
JP5306404B2 (ja) * 2011-03-25 2013-10-02 株式会社東芝 パターン形成方法
CN102478765A (zh) * 2011-05-10 2012-05-30 深圳光启高等理工研究院 一种制备微结构的方法
WO2013010111A2 (en) * 2011-07-13 2013-01-17 University Of Utah Research Foundation Nanoimprint lithography
JP6008628B2 (ja) * 2011-07-19 2016-10-19 株式会社トクヤマ 光硬化性ナノインプリント用組成物を用いたパターンの製造方法
JP6012344B2 (ja) * 2011-10-24 2016-10-25 キヤノン株式会社 膜の形成方法
JP6082237B2 (ja) * 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
KR101926539B1 (ko) * 2011-12-13 2018-12-10 엘지이노텍 주식회사 나노와이어 격자구조물 및 나노와이어 제조방법
US8829514B2 (en) * 2011-12-14 2014-09-09 E Ink Holdings Inc. Thin film transistor and method for manufacturing the same
JP6108765B2 (ja) * 2011-12-19 2017-04-05 キヤノン株式会社 光硬化性組成物およびパターン形成方法
CN102591140B (zh) * 2011-12-30 2013-07-24 苏州锦元纳米科技有限公司 一种纳米压印方法
JPWO2013111631A1 (ja) * 2012-01-23 2015-05-11 旭硝子株式会社 ナノインプリントモールド用ブランク、ナノインプリントモールドおよびそれらの製造方法
CN102707378B (zh) * 2012-06-12 2013-09-04 华南师范大学 一种应用压印技术制作硅酮微纳光学结构的方法
JP6278645B2 (ja) * 2012-09-24 2018-02-14 キヤノン株式会社 光硬化性組成物及びこれを用いた膜の製造方法
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
JP6255182B2 (ja) 2013-07-24 2017-12-27 東京応化工業株式会社 下地剤、相分離構造を含む構造体の製造方法
JP6446195B2 (ja) 2013-07-31 2018-12-26 東京応化工業株式会社 相分離構造体の製造方法、パターン形成方法及び微細パターン形成方法
JP6393546B2 (ja) 2013-07-31 2018-09-19 東京応化工業株式会社 相分離構造を含む構造体の製造方法、パターン形成方法及び微細パターン形成方法
CN104562023A (zh) * 2013-10-18 2015-04-29 富泰华工业（深圳）有限公司 树脂与异质材料的复合体的制造方法
JP6249714B2 (ja) 2013-10-25 2017-12-20 東京応化工業株式会社 相分離構造を含む構造体の製造方法
TW201523917A (zh) * 2013-12-12 2015-06-16 Hwasun Quartek Corp 磊晶基板、其製造方法及發光二極體
KR101587527B1 (ko) * 2014-01-09 2016-01-22 한국기계연구원 터치 스크린 패널 및 이의 제조방법
TWI648320B (zh) 2014-01-23 2019-01-21 東京應化工業股份有限公司 含相分離結構之結構體之製造方法、圖型形成方法、微細圖型形成方法
EP3198629A4 (en) * 2014-09-22 2018-05-30 Intel Corporation Multi-pass patterning using non-reflecting radiation lithography on an underlying grating
TWI643901B (zh) 2015-12-16 2018-12-11 財團法人工業技術研究院 光壓印樹脂組成物、光壓印樹脂膜以及圖案化製程
TWI610804B (zh) * 2016-05-23 2018-01-11 國立成功大學 節能玻璃及其製造方法
KR102712660B1 (ko) * 2016-07-28 2024-10-04 삼성디스플레이 주식회사 패터닝된 경화물의 제조 방법 및 패터닝된 경화물
CN109790390B (zh) 2016-09-27 2022-02-22 富士胶片株式会社 分散液、组合物、膜、膜的制造方法及分散剂
CN106595727B (zh) * 2016-11-30 2019-06-11 华中科技大学 基于纳米复制成型的光子晶体纳米流体传感器及制备方法
KR102256347B1 (ko) * 2017-03-08 2021-05-27 캐논 가부시끼가이샤 패턴 형성 방법, 및 가공 기판, 광학 부품 및 석영 몰드 레플리카의 제조 방법, 및 임프린트 전처리 코팅 재료 및 그와 임프린트 레지스트와의 세트
JP6869838B2 (ja) * 2017-07-14 2021-05-12 キヤノン株式会社 インプリント方法、インプリント装置および物品の製造方法
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法
CN107817547B (zh) * 2017-12-08 2020-06-16 深圳市华星光电技术有限公司 光栅的制造方法
KR102358171B1 (ko) * 2018-01-30 2022-02-03 동우 화인켐 주식회사 하드마스크용 조성물
JP7081337B2 (ja) * 2018-06-27 2022-06-07 Dic株式会社 光硬化性組成物及びその製造方法
US10690831B2 (en) * 2018-11-20 2020-06-23 Facebook Technologies, Llc Anisotropically formed diffraction grating device
JP7583603B2 (ja) * 2020-12-18 2024-11-14 フジコピアン株式会社 樹脂組成物
JPWO2023037941A1 (enExample) * 2021-09-10 2023-03-16
CN121368927A (zh) * 2023-06-29 2026-01-20 味之素株式会社 布线板的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425530A (ja) * 1990-05-21 1992-01-29 Nippon Telegr & Teleph Corp <Ntt> シロキサンポリマー及びレジスト組成物
JP3140102B2 (ja) * 1991-09-03 2001-03-05 キヤノン株式会社 ピッチ工具の製造方法およびその装置
US6268089B1 (en) * 1998-02-23 2001-07-31 Agere Systems Guardian Corp. Photorecording medium and process for forming medium
DE10001135A1 (de) * 2000-01-13 2001-07-19 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung eines mikrostrukturierten Oberflächenreliefs durch Prägen thixotroper Schichten
JP4208447B2 (ja) * 2001-09-26 2009-01-14 独立行政法人科学技術振興機構 Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
DE10217151A1 (de) * 2002-04-17 2003-10-30 Clariant Gmbh Nanoimprint-Resist
JP4340086B2 (ja) * 2003-03-20 2009-10-07 株式会社日立製作所 ナノプリント用スタンパ、及び微細構造転写方法
JP2004319762A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2005008909A (ja) * 2003-06-16 2005-01-13 Canon Inc 構造体の製造方法
JP2005092099A (ja) * 2003-09-19 2005-04-07 Fuji Photo Film Co Ltd 硬化性樹脂組成物、及び光学物品、並びにそれを用いた画像表示装置
WO2005036269A1 (ja) * 2003-10-07 2005-04-21 Hitachi Chemical Co., Ltd. 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
EP1538482B1 (en) * 2003-12-05 2016-02-17 Obducat AB Device and method for large area lithography
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505925B (zh) * 2011-07-21 2015-11-01 Toshiba Kk 壓印方法及壓印系統
US9541847B2 (en) 2011-07-21 2017-01-10 Kabushiki Kaisha Toshiba Imprint method and imprint system

Also Published As

Publication number Publication date
JP5000112B2 (ja) 2012-08-15
TW200728923A (en) 2007-08-01
KR20080034983A (ko) 2008-04-22
CN101258018B (zh) 2013-03-06
CN101258018A (zh) 2008-09-03
JP2007072374A (ja) 2007-03-22
US20090263631A1 (en) 2009-10-22
WO2007029542A1 (ja) 2007-03-15

Similar Documents

Publication Publication Date Title
TWI338196B (enExample)
JP5879086B2 (ja) ナノインプリント用複製モールド
TWI515513B (zh) 奈米壓印用光阻下層膜形成組成物
US8293354B2 (en) UV curable silsesquioxane resins for nanoprint lithography
TWI500638B (zh) 奈米壓印用硬化性組成物及硬化物
CN101164014B (zh) 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
CN101923279B (zh) 纳米压印模板及其制备方法
CN112462572B (zh) 光刻胶、光刻胶的图案化方法及生成印刷电路板的方法
JP2010143220A (ja) ポリマーフィルム表面相互作用を変えるためのプロセス及び方法
TW200846824A (en) Curing composition for photonano-imprinting lithography and pattern forming method by using the same
TWI507450B (zh) 使用矽化合物的形成膜組成物
CN101627336A (zh) 使用具有表面改性材料的印模在基底上形成功能性材料的图案的方法
TW200923583A (en) Curable composition for photonano-imprinting and member for liquid crystal display device by using it
TW201005036A (en) Aqueous curable imprintable medium and patterned layer forming method
WO2010005032A1 (ja) パターン形成方法
JPWO2018074539A1 (ja) 硬化膜の形成方法、感放射線樹脂組成物、硬化膜を備える表示素子及びセンサー
TW201234109A (en) Compositions comprising base-reactive component and processes for photolithography
TW201538600A (zh) 光壓印用硬化性組成物、圖案形成方法及圖案
Takei UV nanoimprint lithography of 70 nm half pitch line pattern using plant-based resist material with lactulose derivative derived from biomass and medicinal drugs
CN101923283B (zh) 纳米压印抗蚀剂及采用该纳米压印抗蚀剂的纳米压印方法
JPWO2020022514A1 (ja) 成形物の製造方法、インプリント−電子描画の一括成形用レジスト、レプリカモールドの製造方法、デバイスの製造方法、及びインプリント材料
Takei et al. Advanced step and flash nanoimprint lithography using UV-sensitive hard mask underlayer material
JP5887871B2 (ja) 被膜形成材料及びパターン形成方法
TWI389931B (zh) 奈米壓印抗蝕劑及採用該奈米壓印抗蝕劑的奈米壓印方法
TWI314151B (enExample)