TW200728923A - Film forming composition for nanoimprint and pattern forming method - Google Patents

Film forming composition for nanoimprint and pattern forming method

Info

Publication number
TW200728923A
TW200728923A TW095132736A TW95132736A TW200728923A TW 200728923 A TW200728923 A TW 200728923A TW 095132736 A TW095132736 A TW 095132736A TW 95132736 A TW95132736 A TW 95132736A TW 200728923 A TW200728923 A TW 200728923A
Authority
TW
Taiwan
Prior art keywords
compound
nanoimprint
based polymer
film forming
forming method
Prior art date
Application number
TW095132736A
Other languages
English (en)
Chinese (zh)
Other versions
TWI338196B (enExample
Inventor
Yoshinori Sakamoto
Naoki Yamashita
Kiyoshi Ishikawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200728923A publication Critical patent/TW200728923A/zh
Application granted granted Critical
Publication of TWI338196B publication Critical patent/TWI338196B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1039—Surface deformation only of sandwich or lamina [e.g., embossed panels]
    • Y10T156/1041—Subsequent to lamination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Silicon Polymers (AREA)
TW095132736A 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method TW200728923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005262009A JP5000112B2 (ja) 2005-09-09 2005-09-09 ナノインプリントリソグラフィによるパターン形成方法

Publications (2)

Publication Number Publication Date
TW200728923A true TW200728923A (en) 2007-08-01
TWI338196B TWI338196B (enExample) 2011-03-01

Family

ID=37835663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132736A TW200728923A (en) 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method

Country Status (6)

Country Link
US (1) US20090263631A1 (enExample)
JP (1) JP5000112B2 (enExample)
KR (1) KR20080034983A (enExample)
CN (1) CN101258018B (enExample)
TW (1) TW200728923A (enExample)
WO (1) WO2007029542A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386304B (zh) * 2010-06-25 2013-02-21 Hon Hai Prec Ind Co Ltd 奈米壓印方法
TWI391418B (zh) * 2009-06-19 2013-04-01 Hon Hai Prec Ind Co Ltd 奈米壓印抗蝕劑及採用該奈米壓印抗蝕劑的奈米壓印方法
US8574822B2 (en) 2009-06-09 2013-11-05 Tsinghua University Nanoimprint resist
TWI472810B (zh) * 2012-12-26 2015-02-11 Hon Hai Prec Ind Co Ltd 光柵的製備方法
TWI562197B (enExample) * 2012-01-23 2016-12-11 Asahi Glass Co Ltd

Families Citing this family (76)

* Cited by examiner, † Cited by third party
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EP2087403B1 (en) 2006-11-01 2012-02-01 Koninklijke Philips Electronics N.V. Imprint method for forming a relief layer and use of it as an etch mask
JP5362186B2 (ja) * 2007-03-24 2013-12-11 株式会社ダイセル ナノインプリント用樹脂組成物
JP5269449B2 (ja) * 2007-03-24 2013-08-21 株式会社ダイセル ナノインプリント用硬化性樹脂組成物
JP2009020962A (ja) 2007-07-12 2009-01-29 Canon Inc 微細パターンの形成方法及びスタンパ
JP2009037696A (ja) * 2007-08-02 2009-02-19 Toshiba Corp インプリント方法
JP5387814B2 (ja) * 2007-08-30 2014-01-15 学校法人東京理科大学 ３次元モールドの製造方法
JP5266248B2 (ja) 2007-11-07 2013-08-21 昭和電工株式会社 エポキシ基含有オルガノシロキサン化合物
WO2009069465A1 (ja) * 2007-11-30 2009-06-04 Showa Denko K.K. 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法
JP5328263B2 (ja) * 2008-03-18 2013-10-30 昭和電工株式会社 磁気記録媒体の製造方法、磁気記録媒体、及び磁気記録再生装置
JP2009226660A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp ドライエッチングによるパターニング方法及びそれに用いるモールド並びにインクジェットヘッドの製造方法
US9429837B2 (en) * 2008-05-20 2016-08-30 Asml Netherlands B.V. Aqueous curable imprintable medium and patterned layer forming method
JP5438285B2 (ja) * 2008-05-23 2014-03-12 昭和電工株式会社 転写材料用硬化性組成物および微細パターン形成方法
JP2010093218A (ja) * 2008-09-11 2010-04-22 Fujifilm Corp 感光性組成物および基板の加工基板の製造方法。
JP4990866B2 (ja) 2008-10-08 2012-08-01 昭和電工株式会社 磁気記録媒体の製造方法および磁気記録再生装置
KR101457185B1 (ko) * 2008-10-09 2014-10-31 서울대학교산학협력단 진공효과를 이용한 고분자 전구체의 나노기공 내 삽입방법 및 이를 이용한 나노패턴의 정밀 복제방법
WO2010050379A1 (ja) 2008-10-31 2010-05-06 昭和電工株式会社 転写材料用硬化性組成物およびパターン形成方法
EP2393106A4 (en) 2009-01-29 2012-10-03 Showa Denko Kk CURABLE COMPOSITION FOR A TRANSMISSION MATERIAL AND UREA CONNECTION TO A (METH) ACRYLOYL GROUP
JP5618599B2 (ja) * 2009-04-10 2014-11-05 独立行政法人科学技術振興機構 パターンの形成方法
JP5445743B2 (ja) * 2009-04-14 2014-03-19 日産化学工業株式会社 光インプリント用被膜形成用組成物
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