ATE452220T1 - Verfahren zur abscheidung anorganischer/organischer filme - Google Patents

Verfahren zur abscheidung anorganischer/organischer filme

Info

Publication number
ATE452220T1
ATE452220T1 AT03737510T AT03737510T ATE452220T1 AT E452220 T1 ATE452220 T1 AT E452220T1 AT 03737510 T AT03737510 T AT 03737510T AT 03737510 T AT03737510 T AT 03737510T AT E452220 T1 ATE452220 T1 AT E452220T1
Authority
AT
Austria
Prior art keywords
organic film
coating
depositing inorganic
hybrid
describes
Prior art date
Application number
AT03737510T
Other languages
English (en)
Inventor
Joannes Linden
Gregory Alcott
Edward Hamers
De Sanden Mauritius Van
Original Assignee
Tno
Univ Eindhoven Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tno, Univ Eindhoven Tech filed Critical Tno
Application granted granted Critical
Publication of ATE452220T1 publication Critical patent/ATE452220T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Silicon Compounds (AREA)
AT03737510T 2002-01-18 2003-01-17 Verfahren zur abscheidung anorganischer/organischer filme ATE452220T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1019781A NL1019781C2 (nl) 2002-01-18 2002-01-18 Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan.
PCT/NL2003/000037 WO2003066933A1 (en) 2002-01-18 2003-01-17 Method for depositing inorganic/organic films

Publications (1)

Publication Number Publication Date
ATE452220T1 true ATE452220T1 (de) 2010-01-15

Family

ID=27730963

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03737510T ATE452220T1 (de) 2002-01-18 2003-01-17 Verfahren zur abscheidung anorganischer/organischer filme

Country Status (9)

Country Link
US (1) US8178170B2 (de)
EP (1) EP1466035B1 (de)
JP (1) JP2005517089A (de)
CN (1) CN100347335C (de)
AT (1) ATE452220T1 (de)
AU (1) AU2003244361A1 (de)
DE (1) DE60330543D1 (de)
NL (1) NL1019781C2 (de)
WO (1) WO2003066933A1 (de)

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JP4269263B2 (ja) * 2003-07-01 2009-05-27 富士電機デバイステクノロジー株式会社 硬質カーボン膜の形成方法および装置
EP1582270A1 (de) * 2004-03-31 2005-10-05 Vlaamse Instelling voor Technologisch Onderzoek Verfahren und Vorrichtung zum Beschichten eines Substrats mittels dielektrischer Sperrentladung
EP1586674A1 (de) * 2004-04-14 2005-10-19 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Vorrichtung und Methode zur Herstellung von Schichten
DE102005007825B4 (de) 2005-01-10 2015-09-17 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Verfahren zur Herstellung einer reflexionsmindernden Beschichtung, reflexionsmindernde Schicht auf einem transparenten Substrat sowie Verwendung einer derartigen Schicht
GB0504384D0 (en) * 2005-03-03 2005-04-06 Univ Durham Method for producing a composite coating
US7387813B2 (en) 2005-07-07 2008-06-17 Specialty Coating Systems, Inc. Methods of preparation of hollow microstructures and nanostructures
EP1741826A1 (de) * 2005-07-08 2007-01-10 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Verfahren zur Beschichtung einer Polymerschicht enthaltend Nanomaterialien auf einem Substrat und Vorrichtung
DE102005045350B4 (de) * 2005-09-22 2009-07-16 Siemens Ag Druckschablone eines SMT-Prozesses
US7994372B2 (en) 2005-10-31 2011-08-09 Specialty Coating Systems, Inc. Parylene variants and methods of synthesis and use
WO2007114852A2 (en) * 2005-11-07 2007-10-11 Micropyretics Heaters International, Inc. Materials having an enhanced emissivity and methods for making the same
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US20080102223A1 (en) * 2006-11-01 2008-05-01 Sigurd Wagner Hybrid layers for use in coatings on electronic devices or other articles
EP2089480A4 (de) * 2006-11-27 2012-10-03 Micropyretics Heaters Int Antimikrobielle materialien und beschichtungen
EP1938907A1 (de) * 2006-12-28 2008-07-02 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Auftragen von Partikeln auf einem Substrat
US7652178B2 (en) 2007-02-26 2010-01-26 Specialty Coating Systems, Inc. Perfluoroparacyclophane and methods of synthesis and use thereof
TWI538737B (zh) * 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
EP2159304A1 (de) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Vorrichtung und Verfahren zur Atomlagenabscheidung
US20130189446A1 (en) * 2008-09-03 2013-07-25 Dow Corning Corporation Low pressure high frequency pulsed plasma reactor for producing nanoparticles
TWI387394B (zh) * 2009-03-04 2013-02-21 Chung Shan Inst Of Science 有機電激發光元件及其製造方法
GB201000538D0 (en) * 2010-01-14 2010-03-03 P2I Ltd Liquid repellent surfaces
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
DE102011001140A1 (de) * 2011-03-08 2012-09-13 Thyssenkrupp Steel Europe Ag Stahlflachprodukt, Verfahren zum Herstellen eines Stahlflachprodukts und Verfahren zum Herstellen eines Bauteils
US9029264B2 (en) 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate
RU2513496C2 (ru) * 2012-05-31 2014-04-20 Федеральное государственное унитарное предприятие "Научно-производственное объединение "Радиевый институт имени В.Г. Хлопина" Износостойкое металлическое покрытие на основе хрома и способ его нанесения
WO2014078497A1 (en) * 2012-11-16 2014-05-22 Liquipel Ip Llc Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings
CN107460448B (zh) * 2017-08-04 2020-02-04 中国科学院宁波材料技术与工程研究所 一种基体表面的修饰涂层及其制备方法
CN110629204A (zh) * 2018-06-21 2019-12-31 逢甲大学 抗刮疏水层镀制于金属表面的方法
FR3091875B1 (fr) * 2019-01-17 2021-09-24 Innovative Systems Et Tech Isytech Procédé et dispositif de traitement pour le dépôt d’un revêtement à effet barrière
NL2025153B1 (en) * 2020-03-17 2021-10-20 Heineken Supply Chain Bv Surface with an antibiofouling and/or antimicrobial layer

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US5122431A (en) * 1988-09-14 1992-06-16 Fujitsu Limited Thin film formation apparatus
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JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
FR2708624A1 (fr) * 1993-07-30 1995-02-10 Neuville Stephane Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié.
DE4445427C2 (de) * 1994-12-20 1997-04-30 Schott Glaswerke Plasma-CVD-Verfahren zur Herstellung einer Gradientenschicht
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマｃｖｄ法及び装置
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
ITMI981159A1 (it) * 1998-05-26 1999-11-26 Universita' Degli Studi Di Roma Tor Vergata Nuova classe di materiali a base diamante e tecniche per la loro sintesi
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
KR20020070436A (ko) * 1999-11-19 2002-09-09 나노 스케일 서피스 시스템즈, 인코포레이티드 무기/유기 유전체 막의 증착 시스템 및 증착 방법

Also Published As

Publication number Publication date
WO2003066933A1 (en) 2003-08-14
CN1617949A (zh) 2005-05-18
US20050118427A1 (en) 2005-06-02
DE60330543D1 (de) 2010-01-28
EP1466035A1 (de) 2004-10-13
CN100347335C (zh) 2007-11-07
JP2005517089A (ja) 2005-06-09
NL1019781C2 (nl) 2003-07-21
AU2003244361A1 (en) 2003-09-02
US8178170B2 (en) 2012-05-15
EP1466035B1 (de) 2009-12-16

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