ATE542237T1 - Verfahren zur übertragung mit einem ferroelektrischen substrat - Google Patents
Verfahren zur übertragung mit einem ferroelektrischen substratInfo
- Publication number
- ATE542237T1 ATE542237T1 AT09731294T AT09731294T ATE542237T1 AT E542237 T1 ATE542237 T1 AT E542237T1 AT 09731294 T AT09731294 T AT 09731294T AT 09731294 T AT09731294 T AT 09731294T AT E542237 T1 ATE542237 T1 AT E542237T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- components
- transmission
- layer
- ferroelectric substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 230000005540 biological transmission Effects 0.000 title 1
- 239000000463 material Substances 0.000 abstract 1
- 230000010070 molecular adhesion Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Laminated Bodies (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0852302A FR2929758B1 (fr) | 2008-04-07 | 2008-04-07 | Procede de transfert a l'aide d'un substrat ferroelectrique |
PCT/EP2009/054007 WO2009124886A1 (fr) | 2008-04-07 | 2009-04-03 | Procede de transfert a l'aide d'un substrat ferroelectrique |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE542237T1 true ATE542237T1 (de) | 2012-02-15 |
Family
ID=40118822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09731294T ATE542237T1 (de) | 2008-04-07 | 2009-04-03 | Verfahren zur übertragung mit einem ferroelektrischen substrat |
Country Status (6)
Country | Link |
---|---|
US (1) | US8951809B2 (de) |
EP (1) | EP2263251B1 (de) |
JP (2) | JP2011517103A (de) |
AT (1) | ATE542237T1 (de) |
FR (1) | FR2929758B1 (de) |
WO (1) | WO2009124886A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2993095B1 (fr) * | 2012-07-03 | 2014-08-08 | Commissariat Energie Atomique | Detachement d’une couche autoportee de silicium <100> |
DE102015210384A1 (de) | 2015-06-05 | 2016-12-08 | Soitec | Verfahren zur mechanischen Trennung für eine Doppelschichtübertragung |
WO2017052646A1 (en) * | 2015-09-25 | 2017-03-30 | Intel Corporation | Island transfer for optical, piezo and rf applications |
FR3078822B1 (fr) * | 2018-03-12 | 2020-02-28 | Soitec | Procede de preparation d’une couche mince de materiau ferroelectrique a base d’alcalin |
US10926521B2 (en) * | 2018-12-28 | 2021-02-23 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin film materials |
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US5536354A (en) * | 1993-04-23 | 1996-07-16 | Canon Kabushiki Kaisha | Solid phase bonding method |
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US5652173A (en) | 1996-05-09 | 1997-07-29 | Philips Electronics North America Corporation | Monolithic microwave circuit with thick conductors |
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FR2775121B1 (fr) | 1998-02-13 | 2000-05-05 | Picogiga Sa | Procede de fabrication de substrats en film mince de materiau semiconducteur, structures epitaxiales de materiau semiconducteur formees sur de tels substrats, et composants obtenus a partir de ces structures |
US6641662B2 (en) * | 1998-02-17 | 2003-11-04 | The Trustees Of Columbia University In The City Of New York | Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same |
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FR2783254B1 (fr) | 1998-09-10 | 2000-11-10 | France Telecom | Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus |
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JP3864612B2 (ja) * | 1999-03-16 | 2007-01-10 | 富士ゼロックス株式会社 | 微小構造体の製造方法および装置 |
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FR2794893B1 (fr) | 1999-06-14 | 2001-09-14 | France Telecom | Procede de fabrication d'un substrat de silicium comportant une mince couche d'oxyde de silicium ensevelie |
US6500732B1 (en) * | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
FR2797713B1 (fr) | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US6690043B1 (en) * | 1999-11-26 | 2004-02-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP3943782B2 (ja) | 1999-11-29 | 2007-07-11 | 信越半導体株式会社 | 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ |
FR2809867B1 (fr) | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
JP3589185B2 (ja) | 2000-08-24 | 2004-11-17 | 日亜化学工業株式会社 | 窒化物半導体の成長方法と窒化物半導体基板 |
US6524935B1 (en) | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
US7052979B2 (en) * | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
KR100853410B1 (ko) * | 2001-04-11 | 2008-08-21 | 소니 가부시키가이샤 | 소자의 전사방법 및 이를 이용한 소자의 배열방법,화상표시장치의 제조방법 |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
US20040029365A1 (en) * | 2001-05-07 | 2004-02-12 | Linthicum Kevin J. | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
DE10156407A1 (de) * | 2001-11-16 | 2003-06-05 | Bosch Gmbh Robert | Haltevorrichtung, insbesondere zum Fixieren eines Halbleiterwafers in einer Plasmaätzvorrichtung, und Verfahren zur Wärmezufuhr oder Wärmeabfuhr von einem Substrat |
JP3910081B2 (ja) * | 2002-02-26 | 2007-04-25 | 東京応化工業株式会社 | 静電チャック装置及び静電チャック装置からの離脱方法 |
JP3885939B2 (ja) * | 2002-03-13 | 2007-02-28 | 日本碍子株式会社 | 光導波路デバイスの製造方法 |
FR2838865B1 (fr) * | 2002-04-23 | 2005-10-14 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee |
US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
EP1429381B1 (de) * | 2002-12-10 | 2011-07-06 | S.O.I.Tec Silicon on Insulator Technologies | Verfahren zur Herstellung eines Verbundmaterials |
US20090325362A1 (en) * | 2003-01-07 | 2009-12-31 | Nabil Chhaimi | Method of recycling an epitaxied donor wafer |
CN100483666C (zh) * | 2003-01-07 | 2009-04-29 | S.O.I.Tec绝缘体上硅技术公司 | 施主晶片以及重复利用晶片的方法和剥离有用层的方法 |
KR100874788B1 (ko) * | 2003-01-07 | 2008-12-18 | 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 | 박층 박리 후에 박리 구조를 포함하는 웨이퍼의 기계적수단에 의한 재활용 방법 |
FR2892228B1 (fr) | 2005-10-18 | 2008-01-25 | Soitec Silicon On Insulator | Procede de recyclage d'une plaquette donneuse epitaxiee |
JP2004247610A (ja) * | 2003-02-14 | 2004-09-02 | Canon Inc | 基板の製造方法 |
JP2004349665A (ja) * | 2003-05-23 | 2004-12-09 | Creative Technology:Kk | 静電チャック |
FR2855909B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat |
FR2858462B1 (fr) * | 2003-07-29 | 2005-12-09 | Soitec Silicon On Insulator | Procede d'obtention d'une couche mince de qualite accrue par co-implantation et recuit thermique |
JP2005064194A (ja) * | 2003-08-11 | 2005-03-10 | Seiko Epson Corp | Soi構造を有する半導体基板及びその製造方法及び半導体装置 |
FR2858875B1 (fr) * | 2003-08-12 | 2006-02-10 | Soitec Silicon On Insulator | Procede de realisation de couches minces de materiau semi-conducteur a partir d'une plaquette donneuse |
FR2867310B1 (fr) * | 2004-03-05 | 2006-05-26 | Soitec Silicon On Insulator | Technique d'amelioration de la qualite d'une couche mince prelevee |
DE102004016073B4 (de) | 2004-03-30 | 2010-12-23 | Texas Instruments Deutschland Gmbh | Verfahren zur Erzeugung eines Impulsausgangssignals aus einem periodischen Sägezahnsignal und einer Referenzspannung, und getakteter Stromwandler |
JP2008532317A (ja) | 2005-02-28 | 2008-08-14 | シリコン・ジェネシス・コーポレーション | レイヤ転送プロセス用の基板強化方法および結果のデバイス |
JP2006324549A (ja) * | 2005-05-20 | 2006-11-30 | Sony Corp | 素子転写装置、素子転写方法および表示装置の製造方法 |
EP1777735A3 (de) * | 2005-10-18 | 2009-08-19 | S.O.I.Tec Silicon on Insulator Technologies | Verfahren zur Wiederverwendung eines temporären epitaxialen Substrates |
FR2895562B1 (fr) * | 2005-12-27 | 2008-03-28 | Commissariat Energie Atomique | Procede de relaxation d'une couche mince contrainte |
JP4867373B2 (ja) | 2006-02-02 | 2012-02-01 | 株式会社ニコン | ウェハホルダ及び半導体装置の製造方法 |
JP2008041927A (ja) | 2006-08-07 | 2008-02-21 | Shinko Electric Ind Co Ltd | 静電チャックの製造方法 |
JP2008216869A (ja) * | 2007-03-07 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 光学素子の製造方法 |
FR2929864B1 (fr) * | 2008-04-09 | 2020-02-07 | Commissariat A L'energie Atomique | Auto-assemblage de puces sur un substrat |
-
2008
- 2008-04-07 FR FR0852302A patent/FR2929758B1/fr not_active Expired - Fee Related
-
2009
- 2009-04-03 AT AT09731294T patent/ATE542237T1/de active
- 2009-04-03 JP JP2011503408A patent/JP2011517103A/ja active Pending
- 2009-04-03 WO PCT/EP2009/054007 patent/WO2009124886A1/fr active Application Filing
- 2009-04-03 US US12/936,582 patent/US8951809B2/en not_active Expired - Fee Related
- 2009-04-03 EP EP09731294A patent/EP2263251B1/de not_active Not-in-force
-
2015
- 2015-01-29 JP JP2015015499A patent/JP2015092632A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2263251A1 (de) | 2010-12-22 |
FR2929758A1 (fr) | 2009-10-09 |
JP2015092632A (ja) | 2015-05-14 |
US8951809B2 (en) | 2015-02-10 |
EP2263251B1 (de) | 2012-01-18 |
WO2009124886A1 (fr) | 2009-10-15 |
JP2011517103A (ja) | 2011-05-26 |
FR2929758B1 (fr) | 2011-02-11 |
US20110104829A1 (en) | 2011-05-05 |
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