DE602007000428D1 - Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren - Google Patents

Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren

Info

Publication number
DE602007000428D1
DE602007000428D1 DE602007000428T DE602007000428T DE602007000428D1 DE 602007000428 D1 DE602007000428 D1 DE 602007000428D1 DE 602007000428 T DE602007000428 T DE 602007000428T DE 602007000428 T DE602007000428 T DE 602007000428T DE 602007000428 D1 DE602007000428 D1 DE 602007000428D1
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DE
Germany
Prior art keywords
silicon
film
forming composition
supporting substrate
structuring method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007000428T
Other languages
English (en)
Inventor
Tsutomu Ogihara
Takafumi Ueda
Takeshi Asano
Motoaki Iwabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE602007000428D1 publication Critical patent/DE602007000428D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/06Preparatory processes
    • C08G77/08Preparatory processes characterised by the catalysts used
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
DE602007000428T 2006-06-16 2007-06-08 Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren Active DE602007000428D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006167242 2006-06-16

Publications (1)

Publication Number Publication Date
DE602007000428D1 true DE602007000428D1 (de) 2009-02-12

Family

ID=38535891

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007000428T Active DE602007000428D1 (de) 2006-06-16 2007-06-08 Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren

Country Status (5)

Country Link
US (1) US7855043B2 (de)
EP (1) EP1867681B1 (de)
KR (1) KR101225248B1 (de)
DE (1) DE602007000428D1 (de)
TW (1) TWI375869B (de)

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US8524441B2 (en) 2007-02-27 2013-09-03 Az Electronic Materials Usa Corp. Silicon-based antireflective coating compositions
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US8652750B2 (en) * 2007-07-04 2014-02-18 Shin-Etsu Chemical Co., Ltd. Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
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JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
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US8507179B2 (en) 2008-12-10 2013-08-13 Dow Corning Corporation Switchable antireflective coatings
US20110236835A1 (en) * 2008-12-10 2011-09-29 Peng-Fei Fu Silsesquioxane Resins
JP4941684B2 (ja) * 2009-03-27 2012-05-30 信越化学工業株式会社 フォトマスクブランク及びその加工方法
JP5038354B2 (ja) * 2009-05-11 2012-10-03 信越化学工業株式会社 ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法
DE102009028142A1 (de) * 2009-07-31 2011-02-03 Wacker Chemie Ag Bei Raumtemperatur durch Kondensation vernetzende Siliconmassen
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JP5650086B2 (ja) * 2011-06-28 2015-01-07 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
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KR102013960B1 (ko) * 2011-12-21 2019-08-23 다우 글로벌 테크놀로지스 엘엘씨 반사방지 코팅용 조성물
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Also Published As

Publication number Publication date
TW200807157A (en) 2008-02-01
EP1867681B1 (de) 2008-12-31
US20080026322A1 (en) 2008-01-31
KR20070120063A (ko) 2007-12-21
EP1867681A1 (de) 2007-12-19
KR101225248B1 (ko) 2013-01-22
US7855043B2 (en) 2010-12-21
TWI375869B (en) 2012-11-01

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