DE602007000428D1 - Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren - Google Patents
Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und StrukturierungsverfahrenInfo
- Publication number
- DE602007000428D1 DE602007000428D1 DE602007000428T DE602007000428T DE602007000428D1 DE 602007000428 D1 DE602007000428 D1 DE 602007000428D1 DE 602007000428 T DE602007000428 T DE 602007000428T DE 602007000428 T DE602007000428 T DE 602007000428T DE 602007000428 D1 DE602007000428 D1 DE 602007000428D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- film
- forming composition
- supporting substrate
- structuring method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006167242 | 2006-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007000428D1 true DE602007000428D1 (de) | 2009-02-12 |
Family
ID=38535891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007000428T Active DE602007000428D1 (de) | 2006-06-16 | 2007-06-08 | Siliciumhaltige, folienbildende Zusammensetzung, siliciumhaltige Folie, siliciumhaltiges, folientragendes Substrat und Strukturierungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US7855043B2 (de) |
EP (1) | EP1867681B1 (de) |
KR (1) | KR101225248B1 (de) |
DE (1) | DE602007000428D1 (de) |
TW (1) | TWI375869B (de) |
Families Citing this family (45)
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DE602007000498D1 (de) * | 2006-04-11 | 2009-03-12 | Shinetsu Chemical Co | Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren |
US7704670B2 (en) | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
KR20090114476A (ko) * | 2007-02-26 | 2009-11-03 | 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. | 실록산 중합체의 제조 방법 |
US8524441B2 (en) | 2007-02-27 | 2013-09-03 | Az Electronic Materials Usa Corp. | Silicon-based antireflective coating compositions |
US7875417B2 (en) * | 2007-07-04 | 2011-01-25 | Shin-Etsu Chemical Co., Ltd. | Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
US8652750B2 (en) * | 2007-07-04 | 2014-02-18 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
JP4716045B2 (ja) * | 2007-07-04 | 2011-07-06 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法 |
JP4793592B2 (ja) * | 2007-11-22 | 2011-10-12 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法 |
JP5397636B2 (ja) * | 2008-07-24 | 2014-01-22 | 日産化学工業株式会社 | コーティング組成物及びパターン形成方法 |
JP4911143B2 (ja) * | 2008-08-15 | 2012-04-04 | 信越化学工業株式会社 | 高温耐性接着剤組成物、基板の接着方法、及び3次元半導体装置 |
JP4947316B2 (ja) * | 2008-08-15 | 2012-06-06 | 信越化学工業株式会社 | 基板の接合方法並びに3次元半導体装置 |
WO2010021030A1 (ja) * | 2008-08-20 | 2010-02-25 | 富士通株式会社 | レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド |
FR2935977B1 (fr) | 2008-09-15 | 2010-12-17 | Centre Nat Rech Scient | Procede d'hydrolyse-polycondensation photochimique de chromophores reticulables a encombrement sterique, catalyse par un acide photogenere et ses applications. |
JP5015891B2 (ja) | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
JP5015892B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法 |
WO2010053629A1 (en) * | 2008-11-05 | 2010-05-14 | Nitto Denko Corporation | Asymmetric photo-patternable sol-gel precursors and their methods of preparation |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
WO2010068336A1 (en) | 2008-12-10 | 2010-06-17 | Dow Corning Corporation | Silsesquioxane resins |
US8507179B2 (en) | 2008-12-10 | 2013-08-13 | Dow Corning Corporation | Switchable antireflective coatings |
US20110236835A1 (en) * | 2008-12-10 | 2011-09-29 | Peng-Fei Fu | Silsesquioxane Resins |
JP4941684B2 (ja) * | 2009-03-27 | 2012-05-30 | 信越化学工業株式会社 | フォトマスクブランク及びその加工方法 |
JP5038354B2 (ja) * | 2009-05-11 | 2012-10-03 | 信越化学工業株式会社 | ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法 |
DE102009028142A1 (de) * | 2009-07-31 | 2011-02-03 | Wacker Chemie Ag | Bei Raumtemperatur durch Kondensation vernetzende Siliconmassen |
DE102010042712A1 (de) * | 2010-10-20 | 2012-04-26 | Wacker Chemie Ag | Selbsthaftende Härterzusammensetzung |
JP5445473B2 (ja) | 2011-01-14 | 2014-03-19 | 信越化学工業株式会社 | 光学材料形成用シリコーン樹脂組成物及び光学材料 |
FI123666B (fi) * | 2011-04-05 | 2013-09-13 | Silecs Oy | Menetelmä korkean konformaalisuusasteen omaavien pinnoitteiden valmistamiseksi |
JP5650086B2 (ja) * | 2011-06-28 | 2015-01-07 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
US9366964B2 (en) | 2011-09-21 | 2016-06-14 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
KR102013960B1 (ko) * | 2011-12-21 | 2019-08-23 | 다우 글로벌 테크놀로지스 엘엘씨 | 반사방지 코팅용 조성물 |
JP5739360B2 (ja) | 2012-02-14 | 2015-06-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5882776B2 (ja) | 2012-02-14 | 2016-03-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
JP5815477B2 (ja) | 2012-06-13 | 2015-11-17 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜の製膜方法 |
CN104737076B (zh) | 2012-10-31 | 2020-04-03 | 日产化学工业株式会社 | 具有酯基的含硅抗蚀剂下层膜形成用组合物 |
JP5756134B2 (ja) | 2013-01-08 | 2015-07-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物及びパターン形成方法 |
JP5790678B2 (ja) | 2013-02-15 | 2015-10-07 | 信越化学工業株式会社 | パターン形成方法 |
JP5794243B2 (ja) | 2013-02-18 | 2015-10-14 | 信越化学工業株式会社 | パターン形成方法 |
JP5842841B2 (ja) | 2013-02-18 | 2016-01-13 | 信越化学工業株式会社 | パターン形成方法 |
JP6466650B2 (ja) * | 2014-04-03 | 2019-02-06 | 信越化学工業株式会社 | レジスト組成物の製造方法 |
EP3194502A4 (de) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen |
JP6734913B2 (ja) | 2016-02-29 | 2020-08-05 | 富士フイルム株式会社 | パターン積層体の製造方法、反転パターンの製造方法およびパターン積層体 |
US10067160B2 (en) | 2016-11-16 | 2018-09-04 | CBN Nano Technologies, Inc. | Sequential tip systems and methods for positionally controlled chemistry |
US11708384B2 (en) | 2016-05-12 | 2023-07-25 | Cbn Nano Technologies Inc. | Systems and methods for mechanosynthesis |
JP7307005B2 (ja) * | 2019-04-26 | 2023-07-11 | 信越化学工業株式会社 | 硬化触媒の拡散距離を測定する方法 |
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JP4700929B2 (ja) | 2003-06-03 | 2011-06-15 | 信越化学工業株式会社 | 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法 |
KR100882409B1 (ko) | 2003-06-03 | 2009-02-05 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반사 방지용 실리콘 수지, 반사 방지막 재료, 이것을 이용한 반사 방지막 및 패턴 형성 방법 |
JP4355943B2 (ja) | 2003-10-03 | 2009-11-04 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
US7303855B2 (en) | 2003-10-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Photoresist undercoat-forming material and patterning process |
JP4258645B2 (ja) | 2003-10-23 | 2009-04-30 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4769455B2 (ja) * | 2003-12-30 | 2011-09-07 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | コーティング組成物 |
US7678529B2 (en) | 2005-11-21 | 2010-03-16 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
JP4597844B2 (ja) * | 2005-11-21 | 2010-12-15 | 信越化学工業株式会社 | フォトレジスト膜のリワーク方法 |
-
2007
- 2007-06-06 US US11/808,100 patent/US7855043B2/en active Active
- 2007-06-08 DE DE602007000428T patent/DE602007000428D1/de active Active
- 2007-06-08 EP EP07252310A patent/EP1867681B1/de active Active
- 2007-06-15 KR KR1020070058945A patent/KR101225248B1/ko active IP Right Grant
- 2007-06-15 TW TW096121857A patent/TWI375869B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200807157A (en) | 2008-02-01 |
EP1867681B1 (de) | 2008-12-31 |
US20080026322A1 (en) | 2008-01-31 |
KR20070120063A (ko) | 2007-12-21 |
EP1867681A1 (de) | 2007-12-19 |
KR101225248B1 (ko) | 2013-01-22 |
US7855043B2 (en) | 2010-12-21 |
TWI375869B (en) | 2012-11-01 |
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