TWI538737B - 材料沉積總成 - Google Patents
材料沉積總成 Download PDFInfo
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- TWI538737B TWI538737B TW097133425A TW97133425A TWI538737B TW I538737 B TWI538737 B TW I538737B TW 097133425 A TW097133425 A TW 097133425A TW 97133425 A TW97133425 A TW 97133425A TW I538737 B TWI538737 B TW I538737B
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
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- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
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- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
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- B05B7/0441—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber
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- B05B7/0475—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber with means for deflecting the peripheral gas flow towards the central liquid flow
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
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- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/08—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point
- B05B7/0884—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point the outlet orifices for jets constituted by a liquid or a mixture containing a liquid being aligned
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Vapour Deposition (AREA)
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Description
本案要請求2007年8月31日申請之No.60/969,445美國臨時專利申請案,名稱為“用於各異向性聚焦之裝置”的申請權益,其說明書併此附送。
本發明係有關使用不對稱的末端造型來進行材料流之各異向性聚焦的領域。
習知技術概有關於使用氣動力的聚焦來進行液體和液體微粒懸浮液之高解析度無罩沈積的裝置和方法。在最普遍使用的實施例中,一氣懸體流會被聚焦並沈積在一平坦或非平坦的標靶上,而形成一圖案其會被熱性或光化學地處理來達到接近所對應的鬆散材料之物理、光學及/或電的性質。該製法係稱為M3DR(無罩中尺度材料沈積)技術,並會被用來沈積噴霧化的材料,其線寬係小於以傳統的厚膜製法所沈積的線條之尺寸規格。沈積會被進行而無使用阻罩。且,該M3DR製法能夠界定寬度小於1μm的線條。
該M3DR裝置較好使用一氣懸體噴射沈積頭來形成一環形傳送噴流,其包含一外鞘流及一在內之載有氣懸體的載體流。在該環形的氣懸體噴射製法中,該氣懸體流較好係直接在噴霧化程序之後,或在通過一加熱器總成之後來
進入該沈積頭,並沿該裝置的軸線被導至該沈積頭孔隙。其質量輸出較好係藉一氣懸體質量控流器來控制。在該沈積頭內部,該氣懸體流係較好最初藉通過一毫米尺寸的孔隙來被調直。出現的微粒流嗣較好與一環形的鞘流氣組合,該鞘流氣的功能係可消除該噴嘴的阻塞,並聚焦該氣懸體流。該載氣和該鞘流氣最普遍包含壓縮空氣或一種惰氣,且該一或二者亦可包含一修正的溶劑蒸氣含量。例如,當該氣懸體是由一水溶液所形成時,水蒸汽可被添加於該載氣或鞘流氣,以防止噴滴蒸發。
該鞘流氣較好由一在該氣懸體入口下方的鞘流氣入口進入,並與該氣懸體流形成一環狀流。如同該氣懸體載氣,該鞘流氣的流率較好係藉一質量控流器來控制。所組成的噴流會以高速(約50m/s)穿過一導向一標靶的孔隙離開該噴嘴,然後衝擊在該標靶上。此環狀流會將該氣懸體流聚焦在該標靶上,並容許尺寸約小於1μm的特微細構被沈積。圖案係藉相對於該標靶移動該沈積頭來形成。
有關於該M3D方法的習知技術曾揭露某些裝置,其通常使用同軸鞘流的技術。第1圖示出同心管的最簡單造型。最內的霧管10會帶送在一氣懸體霧流中的霧化材料。該管10係在該總成16的近端位置14安裝於外殼12。在該霧管10與外殼12之間的環狀空間會形成共軸的鞘室18。鞘流氣會在近端位置20進入鞘室18,使得當該鞘流氣已移行該鞘室18的長度後,該氣體會建立一完全發展之與該霧流同軸的分層流。該霧流和鞘流會在會聚區22會合,在該處會發生
流體動力的聚焦。該會聚區22的遠端錐部24會提供附加的造型聚焦。尖端26可被添加於該總成16來提供附加的造型聚焦。
液流細胞計數法亦使用流體動力的聚焦來將一樣品流組構成一極細的線其典型會被光學地分析。不像氣懸體與氣鞘M3D方法,該液流細胞計數法只使用液體,故能由液體的不可壓縮性和以分層流聚焦樣品材料而來獲得利益。該液體樣品(典型為一預處理的血液樣本,類似於該M3DR方法中的氣懸體流)會被以一液鞘來聚焦,其典型係為去離子水或鹽水溶液。典型地,該液體樣品會被聚焦至大約10μm寬度,而使相關的生物細胞近乎順序地排列。由該聚焦室中,該等細胞會直接進入一透明且典型為方形的管,其具有一大約250μm2的內方形腔室。該方形的流體腔室並非被用來附加地聚焦該等細胞。在某些情況下,雷射光會被導穿該流體腔室之一表面,且一光學檢測器會被設成相對於該雷射並另有一檢測器垂直於該雷射,而在該雷射束通過該聚焦的樣品流時來檢測被反射和折射的光。由於該樣品係實質上為一順序的細胞串,故該等逐變的光圖案可被分析,且不同的細胞能被檢出並計數。又,利用特殊的設備則該等細胞流能被分類並沈積在分開的腔室中。該等聚焦和光學腔室(典型稱為“流體腔室”)的構造係泛知於該流體細胞測計團體,而具有難以將該聚焦腔室對準於該光學腔室之進口的缺點,以及另一高成本的缺點。在大部份應用中,該等流體腔室必須被重清洗並再使用,而非被拋
棄。再使用的缺點是顯而易見的:交叉污染及耗費時間。流體細胞計數器亦已知因須泵抽、閥控及測計各種液流而會尺寸較大且較複雜。當處理可能有害的生物流體時,其將會極為困難且危險地來裝載、卸除和維修該等器材。
可拋棄的平面液體處理總成亦習知於流體細胞測計法的領域中,如在No.6,537,501美國專利中所舉例者。不必設有許多的管和分開的閥,小液體處理匣將可被使用,其係使用許多典型為塑膠材料的薄層。每一層皆可具有不同的流體通路腔室,或僅為簡單的障壁來分開各別的通道。當妥當地定向並組合時,一流體的“迴路板”會被造成,其中流體能由一層流至另一層。以此疊層的方式,二維的聚焦腔室會被用來將一樣品流體聚焦於一光學腔室中。
本發明係為一種材料沈積總成,包含一第一蓋板及一第二蓋板,該等蓋板之一或兩者係包含一含有一材料之氣懸體的入口,及一或多個鞘流氣入口;一嵌入物密封於該二蓋板之間,該嵌入物包含至少一氣懸體通道會與該氣懸體入口呈流體連接,以及一各異向性噴嘴;其中該一或多個鞘流氣入口會呈流體連接於一鞘流氣容腔,其係包圍該至少一氣懸體通道之一出口及該噴嘴之一入口。該嵌入物較好包含二鏡像板,當它們組合在一起時會形成該氣懸體通道和噴嘴。該鞘流氣較好會包圍並聚焦該鞘流氣容腔和噴嘴中的氣懸體。該鞘流氣容腔較好是各異向性的。該噴
嘴較好係為矩形,且該氣懸體通道較好係為矩形並較好與該矩形噴嘴對準。在沈積該材料時,該噴嘴較好係可相對於一基材移動,且係可擇地相對於該噴嘴與基材之相對移行方向呈斜傾。該沈積總成較好更包含連接該一或多個鞘流氣入口與該鞘流氣容腔的通道,該等通道係構製成可使鞘流氣沿一實質上平行於該氣懸體通道中之氣懸體流向的方向移行進入該鞘流氣容腔內。
該嵌入物可擇地包含一末端片含有一氣懸體通道。該末端片較好是可變形的,且該末端片的變形較好會改變該氣懸體通道之一末端的一寬度。
該至少一氣懸體通道的至少一部份可擇地包含交替偏離的分隔物,或係可擇地次分成多數的較小次通道等。該等次通道較好係軸向地對齊,並排列成兩排,在第一排中的次通道係偏離於在一第二排中的次通道。在第一排中的次通道係可擇地相對於該第二排中的次通道呈斜向,於此情況下,在相鄰的次通道中之個別的氣懸體流較好會在離開該氣懸體通道時交叉。
本發明的目的,優點和新穎特徵及可應用性的其它範圍等,有一部份將會配合所附圖式揭述於以下的詳細說明中,且一部份將會在精習該技術者參閱以下說明之後輕易得知,或可藉實施本發明來學得。本發明的目的和優點可利用特別指出於所附申請專利範圍中的器材和組合來被實現和獲得。
所附圖式係併附於並構成本說明書的一部份,乃示出本發明之一或多個實施例,並與說明內容一起用來解釋本發明的原理。該等圖式係僅供例示本發明之一或多個較佳實施例,而非被視為限制本發明,其中:第1圖為一使用同軸管之習知技術的奈米沈積頭;第2圖為一矩形噴嘴構形之平面總成的分解示意圖;第3圖為一沒有管的平面總成之示意圖;第4圖為一沒有管的平面總成之另一實施例的示意圖;第5圖為一解釋層流斷面廓形的圖表;第6為一圖表乃示出由第5圖的層流斷面廓形所造成的沈積圖案;第7圖為一說明液流平直化的圖表;第8圖為一圖表乃示出許多小層流圖案緊靠在一起;第9圖為一示意圖乃示出在露流通道內的多個方形通道;第10圖為一示意圖乃示出在一不同於第9圖之造型的露流通道內之多個通道;及第11圖為一示意圖乃示出在一不同於第9圖和第10圖之造型的霧流通道內之多個通道。
本發明係有關使用不對稱的噴嘴造型來各異向性地聚焦材料流的裝置及方法。一種構建此一裝置的直接方法係押出二同軸的矩形管;類似第1圖的同心管構形來組合它們,然後再類似於第1圖所示的設計來附接一較小的矩形末
端管。本發明較好利用平面總成,其會在通道設計提供甚大的可調適性,並能構建一聚焦噴嘴陣列而具有共用的霧氣、鞘流氣和廢氣容腔。矩形噴嘴僅為以該等平面總成所可能形成的末端造型之一例。
第2圖示出一會呈顯各異向性聚焦的矩形噴嘴平面總成之一實施例的分解圖。全部四層較好係以設在該二對準孔28中的釘銷來對準。該各層較好係僅利用在各孔30內之六個螺絲的壓縮來密封在一起。為壓縮密封以供操作,所有的配接表面皆必須被良好地加工,且較好被拋光。或者,若該標的物係能在壓縮時呈現一些變形,譬如一高硬度的塑膠基材,則大部份較小的瑕疵和刮痕等將會被包圍的變形材料所密封。使用太軟的基材之風險係密封該總成所需的壓縮可能會顯著地影響噴嘴的形狀。任何可密封該總成的其它方法,包括但不限於墊片及/或黏劑,亦能被使用。
氣懸體霧會由霧氣口32進入該總成。鞘流氣會由鞘氣口34進入該總成。有兩個相同的霧氣通道板36和38,其當組合成第3圖所示的鏡像構造時,會形成矩形的霧氣通道52。頂板40會封抵霧氣通道板36的表面42。底板44會封抵霧氣通道板38的背面(不能見於第2圖中)。在第3圖中,當頂板40和底板44(未示於第3圖)被組合時,鞘流氣容腔會被形成而圍繞霧氣通道52之各側面54、頂面56和底面(不能見到)。會聚區58係為一主要是各異向性流體動力聚焦的區域。各異向性造型的聚焦會發生在第2圖所示的區域48中。該流體會在末端50離開該噴嘴。
一矩形末端係可供用於例如順形塗層的用途中,因其能提供一寬且平坦的噴塗圖案。此末端會不對稱地聚焦該霧氣,故若該噴頭沿垂直於較長邊的方向移行,則會提供一較寬的線寬,而若該噴頭沿垂直於較短邊的方向移行,則會提供一較窄的線寬。後者的圖案將會造成一增加的沈積厚度,因其係在本身上沈積較多的材料。此亦適用於一多噴嘴的沈積頭之情況,其係以一類似的方式被使用。在兩者之間的任何圖案寬度皆可藉相對於材料沈積方向斜轉該噴頭來被達成。又,使用一矩形霧氣通道(取代一典型使用的圓管或方形通道),若定向成與該矩形噴嘴末端相同的方向,將可改良其沈積圖案效果的均一性。該鞘流係有須要用來最小化末端阻塞的可能性和聚焦該霧氣懸體,使當沿該矩形噴嘴末端的細軸線之相同方向來沈積時可造成一較小的沈積圖案(細線)。
第4圖示出一實施例,其中頂板60和底板61係幾乎相同,而霧氣通道62係藉將一末端片63中夾於二相同的鞘片64、66之間來界定。此一噴嘴可容許同一平面總成被用於多種的霧氣、氣體和廢氣,而一不同的末端片63層可被用於不同的用途。此末端片能藉冲壓、機械加工、雷射切割、線EDM、光蝕刻,或任何其它製造技術來製成。且,一單獨的末端片構件能由可變形的材料製成,譬如退火的不銹鋼或高硬度的塑膠,其有一共同的霧氣通道寬度,例如1mm寬。當在製造過程中,各對準銷65之間的距離可被設定來達到霧氣通道62的遠端之所需寬度,以改變所沈積線條的
寬度。又,假設該各層之間的密封能被保持,或使用者能接受妥當材料聚焦之一短暫中斷,則此末端將能僅藉移動該等對準銷65來增加該末端寬度,而不必改變該噴嘴或旋轉該噴嘴,即可沈積不同的線條寬度。
在一噴嘴中的層流會造成材料的不均勻沈積,因為在該噴流中央的材料速度係大於邊緣,如第5圖中所示。故比邊緣更多的材料會沈積在該圖案的中央。當該基材係相對於噴嘴移動時,一不均勻的沈積圖案將會如第6圖所示地形成,其中有比沿著邊緣更多的材料會被沈積在該圖案的中央。但是,層流會比亂流更佳,因為後者典型會造成不良的聚焦和不佳的邊緣界定。噴流平直化能改善層流的沈積不均一性,其是較寬的圖案。噴流平直化在流體機械的領域中乃十分習知,且係為一種已確立的方法可以減少大孔管內的擾動,並能造成一更均勻的層流斷面廓形,如第7和8圖所示。
在一種用以達到一層流斷面之“平直化”的構造中,該寬的矩形霧氣通道係對準一寬的矩形末端。該霧氣通道會被分成多數個較小的次通道68,如第9圖所示。該等次通道可為矩形、圓形、方形或包含任何其它形狀。該霧氣通道亦可另擇地包含任何其它造型,譬如第10圖中所示的交替偏離分隔物70,來達到一較均勻的噴流圖案。類似於第7和8圖中所示的圖案,此構造會使沈積密度產生較小的起伏,因為許多小層流圖案會互相緊靠地沈積。該等起伏能藉如
下所述而來減少:偏離於第一排來置設另一排的霧氣次通道,而使在一排中之一通道的中間係正在下一排之相鄰通道的壁之上方,如第11圖中所示。第11圖示出各次通道72軸向地對齊。該局部化的均一性亦可藉令一排通道相對於另一排呈斜傾,以使個別的噴流僅在當其進入該各異向性聚焦區時相交而來進一步改良。
一不同於次分隔該霧氣通道的實施例係使用多個任何形狀的相鄰霧氣管或通道,它們會被併排並饋供單一寬噴嘴。在此實施例中,較好是單一的鞘流氣容腔係共用於全部的管或通道。
雖本發明已特別參照該等較佳實施例來詳細說明,但其它實施例亦能達到相同的成果。本發明的修正和變化將可為精習於該技術者顯而易知,且在所附申請專利範圍中係意圖涵蓋所有該等修正和等效物。所有引述於上的參考資料、申請案、專利案、和公開案的完整揭露皆併此附送。
10‧‧‧霧管
12‧‧‧外殼
14,20‧‧‧近端位置
16‧‧‧總成
18‧‧‧鞘室
22,58‧‧‧會聚區
24‧‧‧遠端錐部
26‧‧‧尖端
28‧‧‧對準孔
30‧‧‧孔
32‧‧‧霧氣口
34‧‧‧鞘氣口
36,38‧‧‧霧氣通道板
40,60‧‧‧頂板
42‧‧‧表面
44,61‧‧‧底板
48‧‧‧各異向性聚焦區
50‧‧‧末端
52,62‧‧‧霧氣通道
54‧‧‧側面
56‧‧‧頂面
63‧‧‧末端片
64,66‧‧‧鞘片
65‧‧‧對準銷
68,72‧‧‧次通道
70‧‧‧分隔物
第1圖為一使用同軸管之習知技術的奈米沈積頭;第2圖為一矩形噴嘴構形之平面總成的分解示意圖;第3圖為一沒有管的平面總成之示意圖;第4圖為一沒有管的平面總成之另一實施例的示意圖;第5圖為一解釋層流斷面廓形的圖表;第6為一圖表乃示出由第5圖的層流斷面廓形所造成的沈積圖案;第7圖為一說明液流平直化的圖表;
第8圖為一圖表乃示出許多小層流圖案緊靠在一起;第9圖為一示意圖乃示出在露流通道內的多個方形通道;第10圖為一示意圖乃示出在一不同於第9圖之造型的露流通道內之多個通道;及第11圖為一示意圖乃示出在一不同於第9圖和第10圖之造型的霧流通道內之多個通道。
28‧‧‧對準孔
30‧‧‧孔
32‧‧‧霧氣口
34‧‧‧鞘氣口
36,38‧‧‧霧氣通道板
40‧‧‧頂板
42‧‧‧表面
44‧‧‧底板
48‧‧‧各異向性聚焦區
50‧‧‧末端
Claims (12)
- 一種材料沈積總成,其包含:一鞘流氣容腔;至少一氣懸體通道,其包含一矩形開口,該通道係同心地設置於該鞘流氣容腔內且受其圍繞;一會聚區,其中一鞘流氣藉由直接圍繞並聚集離開該開口之一氣懸體來形成一結合流,其包含一外環形鞘流及一在內之載有氣懸體的載體流;一噴嘴,其包含用以輸送該結合流之一矩形截面;一第一蓋板與一第二蓋板,該等蓋板之任一或二者包含用於含有一材料之一氣懸體的入口和一或多個鞘流氣入口;以及密封於該等蓋板之間的一嵌入物,該嵌入物包含該至少一氣懸體通道,該至少一氣懸體通道係與該氣懸體入口及該噴嘴呈流體連接;其中該一或多個鞘流氣入口係與該鞘流氣容腔呈流體連接,該鞘流氣容腔會圍住該至少一氣懸體通道的一出口與該噴嘴之一進口;以及其中該嵌入物包含二個鏡像板,當該等鏡像板裝配在一起時,會形成該至少一氣懸體通道和該噴嘴。
- 如申請專利範圍第1項之材料沈積總成,其中該鞘流氣容腔的維度是異向性的。
- 如申請專利範圍第1項之材料沈積總成,其中該至少一氣懸體通道係與該噴嘴對齊。
- 如申請專利範圍第1項之材料沈積總成,更包含有連接該一或多個鞘流氣入口與該鞘流氣容腔的通道,該等通道係構設成可使一鞘流氣以實質上平行於該氣懸體通道中之一氣懸體流向的一方向,移行進入該至少一鞘流氣容腔。
- 如申請專利範圍第1項之材料沈積總成,其中該嵌入物包含了含有該至少一氣懸體通道之一末端片。
- 如申請專利範圍第5項之材料沈積總成,其中該末端片包含一可變形材料。
- 如申請專利範圍第6項之材料沈積總成,其中該末端片的變形會改變該至少一氣懸體通道之一末端的一寬度。
- 如申請專利範圍第1項之材料沈積總成,其中該至少一氣懸體通道的至少一部份係被再細分成多數個較小的次通道。
- 如申請專利範圍第8項之材料沈積總成,其中該等次通道係軸向地對齊並排列成兩排,一第一排中的次通道會偏離於一第二排中的次通道。
- 如申請專利範圍第9項之材料沈積總成,其中該第一排中的該等次通道相對於該第二排中的該等次通道呈一角度。
- 如申請專利範圍第10項之材料沈積總成,其中在相鄰的次通道中之個別的氣懸體流於離開該至少一氣懸體通道時會相交。
- 如申請專利範圍第1項之材料沈積總成,其中該至少一 氣懸體通道的至少一部份包含交替的偏離分隔物。
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- 2008-09-02 US US12/203,069 patent/US9192054B2/en not_active Expired - Fee Related
- 2008-09-02 WO PCT/US2008/075035 patent/WO2009029938A2/en active Application Filing
- 2008-09-02 JP JP2010523195A patent/JP2010538277A/ja active Pending
- 2008-09-02 CN CN2008801135206A patent/CN101842166B/zh active Active
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US9192054B2 (en) | 2015-11-17 |
TW200924852A (en) | 2009-06-16 |
US20090090298A1 (en) | 2009-04-09 |
CN101842166A (zh) | 2010-09-22 |
WO2009029938A2 (en) | 2009-03-05 |
JP2010538277A (ja) | 2010-12-09 |
KR20100067098A (ko) | 2010-06-18 |
CN101842166B (zh) | 2013-10-09 |
WO2009029938A3 (en) | 2009-05-07 |
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