KR20080034983A - 나노임프린트용의 막형성 조성물 및 패턴 형성 방법 - Google Patents

나노임프린트용의 막형성 조성물 및 패턴 형성 방법 Download PDF

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Publication number
KR20080034983A
KR20080034983A KR1020087005525A KR20087005525A KR20080034983A KR 20080034983 A KR20080034983 A KR 20080034983A KR 1020087005525 A KR1020087005525 A KR 1020087005525A KR 20087005525 A KR20087005525 A KR 20087005525A KR 20080034983 A KR20080034983 A KR 20080034983A
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South Korea
Prior art keywords
forming composition
resist
film forming
pattern
film
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Ceased
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KR1020087005525A
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English (en)
Korean (ko)
Inventor
요시노리 사카모토
나오키 야마시타
기요시 이시카와
Original Assignee
도오꾜오까고오교 가부시끼가이샤
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Publication of KR20080034983A publication Critical patent/KR20080034983A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1039—Surface deformation only of sandwich or lamina [e.g., embossed panels]
    • Y10T156/1041—Subsequent to lamination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Silicon Polymers (AREA)
KR1020087005525A 2005-09-09 2006-08-28 나노임프린트용의 막형성 조성물 및 패턴 형성 방법 Ceased KR20080034983A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005262009A JP5000112B2 (ja) 2005-09-09 2005-09-09 ナノインプリントリソグラフィによるパターン形成方法
JPJP-P-2005-00262009 2005-09-09

Publications (1)

Publication Number Publication Date
KR20080034983A true KR20080034983A (ko) 2008-04-22

Family

ID=37835663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087005525A Ceased KR20080034983A (ko) 2005-09-09 2006-08-28 나노임프린트용의 막형성 조성물 및 패턴 형성 방법

Country Status (6)

Country Link
US (1) US20090263631A1 (enExample)
JP (1) JP5000112B2 (enExample)
KR (1) KR20080034983A (enExample)
CN (1) CN101258018B (enExample)
TW (1) TW200728923A (enExample)
WO (1) WO2007029542A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
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WO2010041873A3 (ko) * 2008-10-09 2010-08-05 서울대학교산학협력단 진공효과를 이용한 고분자 전구체의 나노기공 내 삽입방법 및 이를 이용한 나노패턴의 정밀 복제방법
WO2012086959A3 (ko) * 2010-12-20 2012-10-18 주식회사 동진쎄미켐 프린팅 프로세스용 광경화성 수지 조성물
KR101425706B1 (ko) * 2009-04-10 2014-08-01 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 패턴의 형성 방법, 패턴 및 장치
KR20150083318A (ko) * 2014-01-09 2015-07-17 한국기계연구원 터치 스크린 패널 및 이의 제조방법
KR20190091973A (ko) * 2018-01-30 2019-08-07 동우 화인켐 주식회사 하드마스크용 조성물

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ES2381621T3 (es) 2006-11-01 2012-05-30 Koninklijke Philips Electronics N.V. Método de sobreimpresión para formar una capa en relieve y uso de la misma como máscara de grabado
JP5362186B2 (ja) * 2007-03-24 2013-12-11 株式会社ダイセル ナノインプリント用樹脂組成物
JP5269449B2 (ja) * 2007-03-24 2013-08-21 株式会社ダイセル ナノインプリント用硬化性樹脂組成物
JP2009020962A (ja) 2007-07-12 2009-01-29 Canon Inc 微細パターンの形成方法及びスタンパ
JP2009037696A (ja) * 2007-08-02 2009-02-19 Toshiba Corp インプリント方法
JP5387814B2 (ja) * 2007-08-30 2014-01-15 学校法人東京理科大学 ３次元モールドの製造方法
JP5266248B2 (ja) * 2007-11-07 2013-08-21 昭和電工株式会社 エポキシ基含有オルガノシロキサン化合物
CN101883797B (zh) * 2007-11-30 2012-10-17 昭和电工株式会社 转印材料用固化性组合物和使用该组合物的微细图案形成方法
JP5328263B2 (ja) * 2008-03-18 2013-10-30 昭和電工株式会社 磁気記録媒体の製造方法、磁気記録媒体、及び磁気記録再生装置
JP2009226660A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp ドライエッチングによるパターニング方法及びそれに用いるモールド並びにインクジェットヘッドの製造方法
US9429837B2 (en) * 2008-05-20 2016-08-30 Asml Netherlands B.V. Aqueous curable imprintable medium and patterned layer forming method
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US20110206834A1 (en) * 2008-10-31 2011-08-25 Showa Denko K.K. Curable composition for transfer materials, and pattern forming process
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