TW200728923A - Film forming composition for nanoimprint and pattern forming method - Google Patents

Film forming composition for nanoimprint and pattern forming method

Info

Publication number
TW200728923A
TW200728923A TW095132736A TW95132736A TW200728923A TW 200728923 A TW200728923 A TW 200728923A TW 095132736 A TW095132736 A TW 095132736A TW 95132736 A TW95132736 A TW 95132736A TW 200728923 A TW200728923 A TW 200728923A
Authority
TW
Taiwan
Prior art keywords
compound
nanoimprint
based polymer
film forming
forming method
Prior art date
Application number
TW095132736A
Other languages
English (en)
Other versions
TWI338196B (zh
Inventor
Yoshinori Sakamoto
Naoki Yamashita
Kiyoshi Ishikawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200728923A publication Critical patent/TW200728923A/zh
Application granted granted Critical
Publication of TWI338196B publication Critical patent/TWI338196B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1039—Surface deformation only of sandwich or lamina [e.g., embossed panels]
    • Y10T156/1041—Subsequent to lamination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Silicon Polymers (AREA)
TW095132736A 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method TW200728923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005262009A JP5000112B2 (ja) 2005-09-09 2005-09-09 ナノインプリントリソグラフィによるパターン形成方法

Publications (2)

Publication Number Publication Date
TW200728923A true TW200728923A (en) 2007-08-01
TWI338196B TWI338196B (zh) 2011-03-01

Family

ID=37835663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132736A TW200728923A (en) 2005-09-09 2006-09-05 Film forming composition for nanoimprint and pattern forming method

Country Status (6)

Country Link
US (1) US20090263631A1 (zh)
JP (1) JP5000112B2 (zh)
KR (1) KR20080034983A (zh)
CN (1) CN101258018B (zh)
TW (1) TW200728923A (zh)
WO (1) WO2007029542A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI386304B (zh) * 2010-06-25 2013-02-21 Hon Hai Prec Ind Co Ltd 奈米壓印方法
TWI391418B (zh) * 2009-06-19 2013-04-01 Hon Hai Prec Ind Co Ltd 奈米壓印抗蝕劑及採用該奈米壓印抗蝕劑的奈米壓印方法
US8574822B2 (en) 2009-06-09 2013-11-05 Tsinghua University Nanoimprint resist
TWI472810B (zh) * 2012-12-26 2015-02-11 Hon Hai Prec Ind Co Ltd 光柵的製備方法
TWI562197B (zh) * 2012-01-23 2016-12-11 Asahi Glass Co Ltd

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101535892A (zh) 2006-11-01 2009-09-16 皇家飞利浦电子股份有限公司 凹凸层和制作凹凸层的压印方法
JP5362186B2 (ja) * 2007-03-24 2013-12-11 株式会社ダイセル ナノインプリント用樹脂組成物
JP5269449B2 (ja) * 2007-03-24 2013-08-21 株式会社ダイセル ナノインプリント用硬化性樹脂組成物
JP2009020962A (ja) 2007-07-12 2009-01-29 Canon Inc 微細パターンの形成方法及びスタンパ
JP2009037696A (ja) * 2007-08-02 2009-02-19 Toshiba Corp インプリント方法
JP5387814B2 (ja) * 2007-08-30 2014-01-15 学校法人東京理科大学 ３次元モールドの製造方法
EP2218724B1 (en) 2007-11-07 2015-01-07 Showa Denko K.K. Epoxy group-containing organosiloxane compound, curable composition for transfer material, and fine pattern forming method using the composition
JP5258788B2 (ja) * 2007-11-30 2013-08-07 昭和電工株式会社 転写材料用硬化性組成物および該組成物を用いた微細パターン形成方法
JP5328263B2 (ja) * 2008-03-18 2013-10-30 昭和電工株式会社 磁気記録媒体の製造方法、磁気記録媒体、及び磁気記録再生装置
JP2009226660A (ja) * 2008-03-21 2009-10-08 Fujifilm Corp ドライエッチングによるパターニング方法及びそれに用いるモールド並びにインクジェットヘッドの製造方法
US9429837B2 (en) * 2008-05-20 2016-08-30 Asml Netherlands B.V. Aqueous curable imprintable medium and patterned layer forming method
JP5438285B2 (ja) * 2008-05-23 2014-03-12 昭和電工株式会社 転写材料用硬化性組成物および微細パターン形成方法
JP2010093218A (ja) * 2008-09-11 2010-04-22 Fujifilm Corp 感光性組成物および基板の加工基板の製造方法。
JP4990866B2 (ja) 2008-10-08 2012-08-01 昭和電工株式会社 磁気記録媒体の製造方法および磁気記録再生装置
KR101457185B1 (ko) * 2008-10-09 2014-10-31 서울대학교산학협력단 진공효과를 이용한 고분자 전구체의 나노기공 내 삽입방법 및 이를 이용한 나노패턴의 정밀 복제방법
KR20110090978A (ko) 2008-10-31 2011-08-10 쇼와 덴코 가부시키가이샤 전사 재료용 경화성 조성물 및 패턴 형성 방법
EP2393106A4 (en) 2009-01-29 2012-10-03 Showa Denko Kk CURABLE COMPOSITION FOR TRANSFER MATERIAL AND UREA COMPOUND CONTAINING (METH) ACRYLOYL GROUP
JP5618599B2 (ja) * 2009-04-10 2014-11-05 独立行政法人科学技術振興機構 パターンの形成方法
JP5445743B2 (ja) * 2009-04-14 2014-03-19 日産化学工業株式会社 光インプリント用被膜形成用組成物
KR100935640B1 (ko) 2009-04-20 2010-01-07 서울대학교산학협력단 부분경화를 이용한 계층적 미세 구조물 형성방법
JP5563243B2 (ja) * 2009-06-01 2014-07-30 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5393282B2 (ja) * 2009-06-17 2014-01-22 東京応化工業株式会社 ナノインプリント用組成物およびパターン形成方法
WO2011013630A1 (ja) * 2009-07-29 2011-02-03 日産化学工業株式会社 ナノインプリント用レジスト下層膜形成組成物
JP5263560B2 (ja) * 2009-08-25 2013-08-14 日産化学工業株式会社 高硬度インプリント材料
JP5448649B2 (ja) * 2009-08-31 2014-03-19 東京応化工業株式会社 感光性樹脂組成物
WO2011049078A1 (ja) * 2009-10-22 2011-04-28 日産化学工業株式会社 ケイ素化合物を用いる膜形成組成物
KR100974288B1 (ko) * 2010-01-13 2010-08-05 한국기계연구원 나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 이를 이용한 ｌｅｄ 소자의 제조방법
CN102939640B (zh) * 2010-04-19 2016-05-11 日产化学工业株式会社 高耐擦伤性压印材料
CN102279517A (zh) * 2010-06-14 2011-12-14 清华大学 纳米压印方法
JP2012009742A (ja) * 2010-06-28 2012-01-12 Toshiba Corp パターン形成方法及びインプリント材料
JP5762245B2 (ja) * 2010-10-20 2015-08-12 株式会社トクヤマ 光硬化性ナノインプリント用組成物、該組成物を用いたパターンの形成方法、及び該組成物の硬化体を有するナノインプリント用レプリカ金型
US9228035B2 (en) 2010-10-20 2016-01-05 Tokuyama Corporation Photo-curable nanoimprint composition, method for formatting pattern using the composition, and nanoimprint replica mold comprising cured product of the composition
US9233840B2 (en) * 2010-10-28 2016-01-12 International Business Machines Corporation Method for improving self-assembled polymer features
JP5580800B2 (ja) * 2010-10-29 2014-08-27 東京応化工業株式会社 積層体、およびその積層体の分離方法
WO2012086959A2 (ko) * 2010-12-20 2012-06-28 주식회사 동진쎄미켐 프린팅 프로세스용 광경화성 수지 조성물
KR20140005188A (ko) * 2010-12-22 2014-01-14 닛산 가가쿠 고교 가부시키 가이샤 하드디스크용 피막 형성 조성물
JP2012141533A (ja) * 2011-01-06 2012-07-26 Canon Inc ワイヤーグリッド偏光板の製造方法およびワイヤーグリッド偏光板
JP5890323B2 (ja) 2011-01-13 2016-03-22 丸善石油化学株式会社 光インプリント用樹脂組成物、パターン形成方法及びエッチングマスク
DE112012000833T8 (de) * 2011-02-15 2014-01-02 Dic Corporation Aushärtbare Nanoprägezusammensetzung, mittels Nanoprägelithografie hergestelltes Formprodukt und Verfahren zur Ausbildung einer Strukturierung
JP5306404B2 (ja) * 2011-03-25 2013-10-02 株式会社東芝 パターン形成方法
CN102478765A (zh) * 2011-05-10 2012-05-30 深圳光启高等理工研究院 一种制备微结构的方法
WO2013010111A2 (en) * 2011-07-13 2013-01-17 University Of Utah Research Foundation Nanoimprint lithography
JP6008628B2 (ja) * 2011-07-19 2016-10-19 株式会社トクヤマ 光硬化性ナノインプリント用組成物を用いたパターンの製造方法
JP5498448B2 (ja) 2011-07-21 2014-05-21 株式会社東芝 インプリント方法及びインプリントシステム
JP6012344B2 (ja) * 2011-10-24 2016-10-25 キヤノン株式会社 膜の形成方法
JP6082237B2 (ja) * 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
KR101926539B1 (ko) * 2011-12-13 2018-12-10 엘지이노텍 주식회사 나노와이어 격자구조물 및 나노와이어 제조방법
US8829514B2 (en) * 2011-12-14 2014-09-09 E Ink Holdings Inc. Thin film transistor and method for manufacturing the same
JP6108765B2 (ja) * 2011-12-19 2017-04-05 キヤノン株式会社 光硬化性組成物およびパターン形成方法
CN102591140B (zh) * 2011-12-30 2013-07-24 苏州锦元纳米科技有限公司 一种纳米压印方法
CN102707378B (zh) * 2012-06-12 2013-09-04 华南师范大学 一种应用压印技术制作硅酮微纳光学结构的方法
JP6278645B2 (ja) * 2012-09-24 2018-02-14 キヤノン株式会社 光硬化性組成物及びこれを用いた膜の製造方法
JP6255182B2 (ja) 2013-07-24 2017-12-27 東京応化工業株式会社 下地剤、相分離構造を含む構造体の製造方法
JP6393546B2 (ja) 2013-07-31 2018-09-19 東京応化工業株式会社 相分離構造を含む構造体の製造方法、パターン形成方法及び微細パターン形成方法
JP6446195B2 (ja) 2013-07-31 2018-12-26 東京応化工業株式会社 相分離構造体の製造方法、パターン形成方法及び微細パターン形成方法
CN104562023A (zh) * 2013-10-18 2015-04-29 富泰华工业（深圳）有限公司 树脂与异质材料的复合体的制造方法
JP6249714B2 (ja) 2013-10-25 2017-12-20 東京応化工業株式会社 相分離構造を含む構造体の製造方法
TW201523917A (zh) * 2013-12-12 2015-06-16 Hwasun Quartek Corp 磊晶基板、其製造方法及發光二極體
KR101587527B1 (ko) * 2014-01-09 2016-01-22 한국기계연구원 터치 스크린 패널 및 이의 제조방법
TWI648320B (zh) 2014-01-23 2019-01-21 東京應化工業股份有限公司 含相分離結構之結構體之製造方法、圖型形成方法、微細圖型形成方法
JP6465418B2 (ja) * 2014-09-22 2019-02-06 インテル・コーポレーション 下層格子に対する非反射放射線リソグラフィを使用するマルチパスパターン形成
TWI643901B (zh) 2015-12-16 2018-12-11 財團法人工業技術研究院 光壓印樹脂組成物、光壓印樹脂膜以及圖案化製程
TWI610804B (zh) * 2016-05-23 2018-01-11 國立成功大學 節能玻璃及其製造方法
KR20180014287A (ko) * 2016-07-28 2018-02-08 삼성디스플레이 주식회사 패터닝된 경화물의 제조 방법 및 패터닝된 경화물
WO2018061891A1 (ja) * 2016-09-27 2018-04-05 富士フイルム株式会社 分散液、組成物、膜、膜の製造方法および分散剤
CN106595727B (zh) * 2016-11-30 2019-06-11 华中科技大学 基于纳米复制成型的光子晶体纳米流体传感器及制备方法
KR102256347B1 (ko) * 2017-03-08 2021-05-27 캐논 가부시끼가이샤 패턴 형성 방법, 및 가공 기판, 광학 부품 및 석영 몰드 레플리카의 제조 방법, 및 임프린트 전처리 코팅 재료 및 그와 임프린트 레지스트와의 세트
JP6869838B2 (ja) * 2017-07-14 2021-05-12 キヤノン株式会社 インプリント方法、インプリント装置および物品の製造方法
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法
CN107817547B (zh) * 2017-12-08 2020-06-16 深圳市华星光电技术有限公司 光栅的制造方法
KR102358171B1 (ko) * 2018-01-30 2022-02-03 동우 화인켐 주식회사 하드마스크용 조성물
JP7081337B2 (ja) * 2018-06-27 2022-06-07 Dic株式会社 光硬化性組成物及びその製造方法
US10690831B2 (en) * 2018-11-20 2020-06-23 Facebook Technologies, Llc Anisotropically formed diffraction grating device
WO2023037941A1 (ja) * 2021-09-10 2023-03-16 ダウ・東レ株式会社 高エネルギー線硬化性組成物およびその用途

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425530A (ja) * 1990-05-21 1992-01-29 Nippon Telegr & Teleph Corp <Ntt> シロキサンポリマー及びレジスト組成物
JP3140102B2 (ja) * 1991-09-03 2001-03-05 キヤノン株式会社 ピッチ工具の製造方法およびその装置
US6268089B1 (en) * 1998-02-23 2001-07-31 Agere Systems Guardian Corp. Photorecording medium and process for forming medium
DE10001135A1 (de) * 2000-01-13 2001-07-19 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung eines mikrostrukturierten Oberflächenreliefs durch Prägen thixotroper Schichten
JP4208447B2 (ja) * 2001-09-26 2009-01-14 独立行政法人科学技術振興機構 Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
DE10217151A1 (de) * 2002-04-17 2003-10-30 Clariant Gmbh Nanoimprint-Resist
JP4340086B2 (ja) * 2003-03-20 2009-10-07 株式会社日立製作所 ナノプリント用スタンパ、及び微細構造転写方法
JP2004319762A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2005008909A (ja) * 2003-06-16 2005-01-13 Canon Inc 構造体の製造方法
JP2005092099A (ja) * 2003-09-19 2005-04-07 Fuji Photo Film Co Ltd 硬化性樹脂組成物、及び光学物品、並びにそれを用いた画像表示装置
JP3821165B2 (ja) * 2003-10-07 2006-09-13 日立化成工業株式会社 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
EP1538482B1 (en) * 2003-12-05 2016-02-17 Obducat AB Device and method for large area lithography
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574822B2 (en) 2009-06-09 2013-11-05 Tsinghua University Nanoimprint resist
US9120265B2 (en) 2009-06-09 2015-09-01 Tsinghua University Nanoimprint resist, nanoimprint mold and nanoimprint lithography
TWI391418B (zh) * 2009-06-19 2013-04-01 Hon Hai Prec Ind Co Ltd 奈米壓印抗蝕劑及採用該奈米壓印抗蝕劑的奈米壓印方法
TWI386304B (zh) * 2010-06-25 2013-02-21 Hon Hai Prec Ind Co Ltd 奈米壓印方法
TWI562197B (zh) * 2012-01-23 2016-12-11 Asahi Glass Co Ltd
TWI472810B (zh) * 2012-12-26 2015-02-11 Hon Hai Prec Ind Co Ltd 光柵的製備方法

Also Published As

Publication number Publication date
CN101258018B (zh) 2013-03-06
US20090263631A1 (en) 2009-10-22
TWI338196B (zh) 2011-03-01
WO2007029542A1 (ja) 2007-03-15
KR20080034983A (ko) 2008-04-22
JP2007072374A (ja) 2007-03-22
CN101258018A (zh) 2008-09-03
JP5000112B2 (ja) 2012-08-15

Similar Documents

Publication Publication Date Title
TW200728923A (en) Film forming composition for nanoimprint and pattern forming method
WO2008005208A3 (en) Printing form precursor and process for preparing a stamp from the precursor
TW200741341A (en) Resist composition, method for forming resist pattern using the same, array substrate fabricated using the same and method of fabricating the array substrate
TW200745764A (en) Coating compositions for photolithography
TW200951624A (en) Resist underlayer film forming composition containing silicone having urea group
SG131005A1 (en) Novel tarc material for immersion watermark reduction
WO2010018430A8 (en) A hardmask process for forming a reverse tone image
TW200702928A (en) Composition for underlayer film of resist and process for producing the same
NO20090197L (no) Fremgangsmate for belegning av gruspakksand med polymer nedbryter
TW200710580A (en) Resist underlayer coating forming composition for forming photocrosslinking curable resist underlayer coating
BRPI0516432A (pt) processo para depositar uma camada de organossiloxano
WO2012048108A3 (en) Radiation patternable cvd film
TW200641161A (en) Method of forming mask and mask
ATE530207T1 (de) Dichtungselemente, artikel damit und verfahren zur verminderung von haftreibung
TW200705097A (en) Pattern coating material and pattern formation method
TW200633791A (en) Method for fabricating nano-adhesive
BRPI0518327A2 (pt) composiÇço de revestimento, mÉtodo para revestir um substrato, revestimento sobre um substrato, e, mÉtodo para revestir uma superfÍcie de substrato
WO2010086621A3 (en) Method for attachment of silicon-containing compounds to a surface and for synthesis of hypervalent silicon-compounds
BRPI0508945A (pt) preparação de novos aglutinantes de cura por radiação
TW200801224A (en) Apparatus and method for synthesizing carbon nanotube film
SG142213A1 (en) Etching of nano-imprint templates using an etch reactor
WO2006132672A3 (en) A method of nanopatterning, a cured resist film use therein, and an article including the resist film
ATE452220T1 (de) Verfahren zur abscheidung anorganischer/organischer filme
TW200628399A (en) Mold and process for production of substrates having transferred micropatterns thereon
TW200717654A (en) Multi-source method and system for forming an oxide layer