TW512531B - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory Download PDF

Info

Publication number
TW512531B
TW512531B TW089117699A TW89117699A TW512531B TW 512531 B TW512531 B TW 512531B TW 089117699 A TW089117699 A TW 089117699A TW 89117699 A TW89117699 A TW 89117699A TW 512531 B TW512531 B TW 512531B
Authority
TW
Taiwan
Prior art keywords
data
state
aforementioned
memory
potential
Prior art date
Application number
TW089117699A
Other languages
English (en)
Chinese (zh)
Inventor
Noboru Shibata
Tomoharu Tanaka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW512531B publication Critical patent/TW512531B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW089117699A 1999-09-20 2000-08-31 Nonvolatile semiconductor memory TW512531B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26608599A JP2001093288A (ja) 1999-09-20 1999-09-20 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
TW512531B true TW512531B (en) 2002-12-01

Family

ID=17426140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089117699A TW512531B (en) 1999-09-20 2000-08-31 Nonvolatile semiconductor memory

Country Status (4)

Country Link
US (3) US6288935B1 (enExample)
JP (1) JP2001093288A (enExample)
KR (1) KR100376234B1 (enExample)
TW (1) TW512531B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017107445A1 (de) 2016-04-13 2017-10-19 Louis Chuang Sitzverbindungsvorrichtung
DE102017112953A1 (de) 2016-08-03 2018-02-08 Louis Chuang Wasserflaschen-Halter und eine Kombination, die denselben und einen Wasserflaschen-Halter-Adapter aufweist

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388179B1 (ko) * 1999-02-08 2003-06-19 가부시끼가이샤 도시바 불휘발성 반도체 메모리
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
JP4907011B2 (ja) * 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US7042770B2 (en) 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
JP3977799B2 (ja) * 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6657891B1 (en) 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
ITMI20022570A1 (it) * 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettricamente
ITMI20022569A1 (it) * 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettronicamente
JP3920768B2 (ja) 2002-12-26 2007-05-30 株式会社東芝 不揮発性半導体メモリ
KR100512181B1 (ko) 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory
JP4041057B2 (ja) * 2003-11-13 2008-01-30 株式会社東芝 不揮発性半導体記憶装置
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
US7057939B2 (en) * 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
JP4427382B2 (ja) 2004-04-28 2010-03-03 株式会社東芝 不揮発性半導体記憶装置
US7272050B2 (en) * 2004-08-10 2007-09-18 Samsung Electronics Co., Ltd. Non-volatile memory device and erase method of the same
US7298648B2 (en) * 2004-11-19 2007-11-20 Samsung Electronics Co., Ltd. Page buffer and multi-state nonvolatile memory device including the same
US7212436B2 (en) * 2005-02-28 2007-05-01 Micron Technology, Inc. Multiple level programming in a non-volatile memory device
JP4253309B2 (ja) * 2005-03-18 2009-04-08 株式会社東芝 半導体記憶装置
JP4660243B2 (ja) 2005-03-28 2011-03-30 株式会社東芝 半導体記憶装置
JP4768298B2 (ja) 2005-03-28 2011-09-07 株式会社東芝 不揮発性半導体記憶装置
JP4874566B2 (ja) * 2005-04-11 2012-02-15 株式会社東芝 半導体記憶装置
JP4253312B2 (ja) * 2005-04-15 2009-04-08 株式会社東芝 半導体記憶装置
KR100666174B1 (ko) * 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
JP4842563B2 (ja) 2005-05-16 2011-12-21 パナソニック株式会社 メモリコントローラ、不揮発性記憶装置、不揮発性記憶システム、及びデータ書き込み方法
KR100600301B1 (ko) * 2005-05-25 2006-07-13 주식회사 하이닉스반도체 면적이 감소된 페이지 버퍼 회로와, 이를 포함하는 플래시메모리 장치 및 그 프로그램 동작 방법
JP2007004868A (ja) 2005-06-22 2007-01-11 Matsushita Electric Ind Co Ltd 半導体記憶装置および半導体記憶装置制御方法
KR100624300B1 (ko) * 2005-06-29 2006-09-19 주식회사 하이닉스반도체 프로그램 시간을 감소시키는 플래시 메모리 장치의프로그램 동작 제어 방법
KR100634458B1 (ko) * 2005-07-04 2006-10-16 삼성전자주식회사 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치
KR100721012B1 (ko) * 2005-07-12 2007-05-22 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
EP1746604B1 (en) * 2005-07-22 2009-02-04 STMicroelectronics S.r.l. Method for accessing a multilevel nonvolatile memory device of the flash NAND type
JP4728726B2 (ja) * 2005-07-25 2011-07-20 株式会社東芝 半導体記憶装置
US7362616B2 (en) * 2005-07-28 2008-04-22 Stmicroelectronics S.R.L. NAND flash memory with erase verify based on shorter evaluation time
KR100669351B1 (ko) 2005-07-29 2007-01-16 삼성전자주식회사 멀티 레벨 셀 플래시 메모리의 프로그램 방법 및 장치
JP4846314B2 (ja) * 2005-09-22 2011-12-28 株式会社東芝 半導体記憶装置
KR100729359B1 (ko) * 2005-09-23 2007-06-15 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
JP4233563B2 (ja) * 2005-12-28 2009-03-04 パナソニック株式会社 多値データを記憶する不揮発性半導体記憶装置
KR100684909B1 (ko) * 2006-01-24 2007-02-22 삼성전자주식회사 읽기 에러를 방지할 수 있는 플래시 메모리 장치
KR100724339B1 (ko) 2006-01-25 2007-06-04 삼성전자주식회사 고속의 제1 페이지 독출속도를 가지는 3-레벨 불휘발성반도체 메모리 장치 및 이에 대한 구동방법
JP4693675B2 (ja) 2006-03-27 2011-06-01 株式会社東芝 半導体記憶装置の制御方法
KR100784107B1 (ko) 2006-04-24 2007-12-10 주식회사 하이닉스반도체 플래쉬 메모리 장치의 구동 방법
US7876613B2 (en) 2006-05-18 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
KR100778082B1 (ko) 2006-05-18 2007-11-21 삼성전자주식회사 단일의 래치 구조를 갖는 멀티-비트 플래시 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리카드
KR100854970B1 (ko) 2007-01-08 2008-08-28 삼성전자주식회사 멀티 레벨 셀 플래시 메모리 장치 및 그것의 프로그램 방법
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
JP4976764B2 (ja) * 2006-07-05 2012-07-18 株式会社東芝 半導体記憶装置
KR100919156B1 (ko) * 2006-08-24 2009-09-28 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
KR100764747B1 (ko) 2006-09-15 2007-10-08 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
KR100898684B1 (ko) * 2006-09-29 2009-05-22 주식회사 하이닉스반도체 플래시 메모리 소자 및 그의 프로그램 방법
US7701770B2 (en) * 2006-09-29 2010-04-20 Hynix Semiconductor Inc. Flash memory device and program method thereof
KR100909961B1 (ko) * 2006-10-10 2009-07-29 삼성전자주식회사 프로그램 전압 발생 회로 및 방법, 그리고 이를 이용한불휘발성 메모리 장치
US8059456B2 (en) * 2006-11-07 2011-11-15 Sandisk Il Ltd. Programming a NAND flash memory with reduced program disturb
JP2008123330A (ja) * 2006-11-14 2008-05-29 Toshiba Corp 不揮発性半導体記憶装置
JP2008146772A (ja) 2006-12-12 2008-06-26 Toshiba Corp 半導体記憶装置
KR101194841B1 (ko) * 2006-12-28 2012-10-25 삼성전자주식회사 메모리 셀 프로그래밍 방법
KR100850509B1 (ko) * 2007-01-10 2008-08-05 삼성전자주식회사 프로그램 에러를 감소시킬 수 있는 멀티 비트 플래시메모리 장치의 프로그램 방법
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7508711B2 (en) * 2007-04-30 2009-03-24 Intel Corporation Arrangements for operating a memory circuit
US7577036B2 (en) * 2007-05-02 2009-08-18 Micron Technology, Inc. Non-volatile multilevel memory cells with data read of reference cells
US7577029B2 (en) 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
KR100888842B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 읽기 전압을 최적화할 수 있는 플래시 메모리 장치 및그것의 독출 전압 설정 방법
US7710781B2 (en) * 2007-09-25 2010-05-04 Intel Corporation Data storage and processing algorithm for placement of multi-level flash cell (MLC) VT
KR101379820B1 (ko) 2007-10-17 2014-04-01 삼성전자주식회사 멀티-비트 프로그래밍 장치와 메모리 데이터 검출 장치
JP2009104729A (ja) * 2007-10-24 2009-05-14 Toshiba Corp 不揮発性半導体記憶装置
KR101436505B1 (ko) 2008-01-03 2014-09-02 삼성전자주식회사 메모리 장치
KR101434403B1 (ko) * 2008-05-15 2014-08-27 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 방법, 그리고 그것을포함하는 메모리 시스템
KR101432108B1 (ko) 2008-06-03 2014-08-21 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 구동 방법
US7729166B2 (en) 2008-07-02 2010-06-01 Mosaid Technologies Incorporated Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
JP2010027163A (ja) 2008-07-22 2010-02-04 Toshiba Corp 半導体メモリコントローラ、および半導体メモリシステム、および半導体メモリシステムの記録再生方法
US8406048B2 (en) * 2008-08-08 2013-03-26 Marvell World Trade Ltd. Accessing memory using fractional reference voltages
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
KR101518033B1 (ko) 2008-11-18 2015-05-06 삼성전자주식회사 멀티-레벨 비휘발성 메모리 장치, 상기 장치를 포함하는 메모리 시스템 및 그 동작 방법
JP5408983B2 (ja) 2008-12-11 2014-02-05 三星電子株式会社 マルチレベルセルのデータ読出し方法
KR101489392B1 (ko) 2009-02-02 2015-02-03 삼성전자주식회사 메모리 장치의 리드 동작 방법
US8238166B2 (en) * 2009-10-12 2012-08-07 Macronix International Co., Ltd. Methods of programming and reading single-level trapped-charge memory cells using second-bit threshold detection
JP2011192827A (ja) 2010-03-15 2011-09-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体記憶装置
TWI447733B (zh) * 2010-04-14 2014-08-01 Phison Electronics Corp 計算補償電壓與調整門檻值電壓之方法及記憶體裝置與控制器
KR101139095B1 (ko) * 2010-07-09 2012-04-30 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 이의 프로그램 방법
JP2012089085A (ja) 2010-10-22 2012-05-10 Toshiba Corp 半導体メモリ装置および半導体メモリシステム
JP5197730B2 (ja) * 2010-12-24 2013-05-15 株式会社東芝 半導体記憶装置
JP5330421B2 (ja) * 2011-02-01 2013-10-30 株式会社東芝 不揮発性半導体記憶装置
US8942035B2 (en) 2011-03-23 2015-01-27 Seagate Technology Llc Non-sequential encoding scheme for multi-level cell (MLC) memory cells
JP5380506B2 (ja) 2011-09-22 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
KR102053958B1 (ko) 2013-05-27 2019-12-10 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 재프로그램 방법
JP6262063B2 (ja) 2014-03-18 2018-01-17 東芝メモリ株式会社 不揮発性メモリおよび書き込み方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0172408B1 (ko) * 1995-12-11 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 및 그의 구동방법
JP3062730B2 (ja) * 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
JPH10223866A (ja) * 1997-02-03 1998-08-21 Toshiba Corp 半導体記憶装置
JP3159105B2 (ja) * 1997-02-21 2001-04-23 日本電気株式会社 不揮発性半導体記憶装置及びその書込方法
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6128229A (en) * 1998-09-16 2000-10-03 Sony Corporation Non-volatile semiconductor memory and method of verifying after writing and reading the same
JP3905990B2 (ja) 1998-12-25 2007-04-18 株式会社東芝 記憶装置とその記憶方法
JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
JP4252183B2 (ja) * 2000-02-17 2009-04-08 株式会社ルネサステクノロジ 不揮発性半導体記憶装置、該不揮発性半導体記憶装置からのデータの読み出し方法及び、該不揮発性半導体記憶装置へのデータの書き込み方法
JP3940544B2 (ja) * 2000-04-27 2007-07-04 株式会社東芝 不揮発性半導体メモリのベリファイ方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017107445A1 (de) 2016-04-13 2017-10-19 Louis Chuang Sitzverbindungsvorrichtung
DE102017112953A1 (de) 2016-08-03 2018-02-08 Louis Chuang Wasserflaschen-Halter und eine Kombination, die denselben und einen Wasserflaschen-Halter-Adapter aufweist

Also Published As

Publication number Publication date
US20010036104A1 (en) 2001-11-01
US6496412B1 (en) 2002-12-17
KR20010070086A (ko) 2001-07-25
KR100376234B1 (ko) 2003-03-15
US6288935B1 (en) 2001-09-11
US6426892B2 (en) 2002-07-30
JP2001093288A (ja) 2001-04-06

Similar Documents

Publication Publication Date Title
TW512531B (en) Nonvolatile semiconductor memory
TW449923B (en) Semiconductor memory device
TW451481B (en) Nonvolatile semiconductor memory device
US8971141B2 (en) Compact high speed sense amplifier for non-volatile memory and hybrid lockout
JP5470461B2 (ja) ビットラインをフロートさせる不揮発性メモリの中速及び全速プログラム
US7366018B2 (en) Semiconductor memory device capable of setting a negative threshold voltage
KR100831812B1 (ko) 비휘발성 반도체 메모리 장치
US20080144370A1 (en) Method of programming multi-level cells and non-volatile memory device including the same
US20090296488A1 (en) High Speed Sense Amplifier Array and Method for Nonvolatile Memory
JP2005032431A (ja) マルチレベルセルを有するフラッシュメモリ装置とその読み出し方法及びプログラム方法
US9293195B2 (en) Compact high speed sense amplifier for non-volatile memory
KR101038609B1 (ko) 기입 전압을 낮게 하는 것이 가능한 반도체 기억 장치
TW201023195A (en) Non-volatile semiconductor memory device and method of reading the same
JP2011054249A (ja) 半導体記憶装置
US6104635A (en) Non-volatile memory device readable write data latch, and internal control thereof
JP2010135023A (ja) 半導体記憶装置
JP5193815B2 (ja) 半導体記憶装置
JP3200006B2 (ja) 不揮発性半導体記憶装置
JP4029469B2 (ja) 不揮発性半導体記憶装置およびそのデータ書き込み方法
TW202240589A (zh) 半導體裝置及讀出方法
USRE40110E1 (en) Nonvolatile semiconductor memory device for storing multivalued data
JPH11242893A (ja) 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2008176924A (ja) 半導体記憶装置
JP2000228097A (ja) 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP4513839B2 (ja) 不揮発性半導体記憶装置およびそのデータ書き込み方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent