TW201030892A - Gap maintenance for opening to process chamber - Google Patents
Gap maintenance for opening to process chamber Download PDFInfo
- Publication number
- TW201030892A TW201030892A TW098142134A TW98142134A TW201030892A TW 201030892 A TW201030892 A TW 201030892A TW 098142134 A TW098142134 A TW 098142134A TW 98142134 A TW98142134 A TW 98142134A TW 201030892 A TW201030892 A TW 201030892A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- workpiece
- semiconductor
- pedestal
- gap
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims description 8
- 238000012423 maintenance Methods 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims description 100
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 21
- 238000010926 purge Methods 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 239000002243 precursor Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009408 flooring Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
201030892 33234pif 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種操作(handling)與處理半導體 基底的系統與方法,且特別是有關於用來製作(fabrication) 薄膜的反應器(reactor)。 【先前技術】 在電晶體、二極體與積體電路等半導體元件 ❿ (semiconductor device)的製程裡,多數的這類元件典型 地同時被製作於半導體材料的薄片上,該薄片被稱為基 底、晶圓或是工件(workpiece)。當製造這類半導體元件 時’會希望工件不會變得被微粒污染,而這樣的污染可能 會造成元件失效。於是,處理工件所位於的反應器典型地 會被密封,以避免來自反應空間外的污染進入反應空間, 且避免反應物與反應副產物漏到反應空間之外。 【發明内容】 _ 在一實施例中,提出一種半導體處理裝置,包括:反 應室二可移動的基座(suseepto)、移動件以錄制系統。 反應室包括基板(baseplate)、且該基板具有一開口。可 移動的基座設置成保持該工件。移動件設置成將被保持於 基座上的工件朝基板的開口移動。控制系統設置成在處理 位,反應至中的工件的期間,藉由非密封的一間隙將基座 從基板分隔開。 在-實施例中,還提出—種半導體工件的處理方法, 匕括.加載-半導體工件至可移動的一基座上;朝一反應 201030892 33234pif ?板中的一開口而移動基座;當基座位於-處理 # 止基座的移動’其中基座位於處理位置時,該 :要#纟密封的1隙而從基板分隔開;以及,於處理 立置&理JL件、且同時維持間隙。 為了總結本發_目的錢達成㈣於先前技術的 * 發明的目的與優點已在上文描述。當然,需注意 的,、’ 有的目的與優點均由本發明的任—特定實^ J達成因此,例如,本領域技術人員將會認識到以此 ’加以實施或執行,藉以達成或最佳化—個或―組由本 發明^不的優點’而不需要達成本發明所教示的其他優點。 廷·些實施例都是預期在本發明的範圍下於此揭露。對 於本領域技術人貞來說,根據以下參相_某個實施例 的詳細說明’频和其他的實關將會是明㈣懂,本發 明將不限於所揭露之任何特定的實施例。 【實施方式】 雖然以下所揭露的是某些實施例與範例,但本領域技 術人員仍能了解本發明的特定實施例的延伸、及/或本發明 的使用、明顯的修改與等效物。因此,可預期的,在此揭 露本發明的範圍不應受到以下描述的特定實施例所限制。 圖1示意地繪示包括一反應室102的一半導體處理裝 置100的一範例實施例。反應室102包括一入口 1〇4與一 出口 106。反應物與清洗氣體等氣體經由入口 1〇4流入腔 室102 (chamber),而過量的反應物、反應副產物與清洗 氣體等氣體經由出口 106流出腔室1〇2。腔室1〇2包括一 201030892 33234pif 基板112’此基板112具有一開口 150。此裝置100更包括 一基座108 (susceptor),配置成受到一移動件11〇的操 作而移動。基座108配置成用以保持一半導體工件w。移 動件110設置成用以移動基座1〇8,且於是一工件w g己置 於基座108上、朝向基板112的開口 150,以在腔室102 内部與腔室102外部之間提供一密封,從而在腔室1〇2裡 形成一處理區。 φ 在實施例中,基座108與基板112包括:加工金屬, 由於在基座108與基板112的區域有不完全平整及/或不完 全平行的表面而在基座108與基板112之間造成細小、偶 然的間隙’使得基座108與基板112之間的密封可能因此 而不完全。力可施加於基座108與基板112上,藉以試著 減少或消除這些細小的間隙,例如利用張力偏移元件 (tensioned biasing elements )。此類區域通常小到不會對 製程產生不利的影響,且降低的壓力可以藉由腔室1〇2相 對腔室102的外部來達到。每當一工件W在腔室1〇2裡被 ® 處理時,基座108與基板112產生實體上的接觸,而會貢 獻金屬微粒的產生。根據基板112與基座1〇8材質、以及 處理室中所進行的製程而定,這些微粒可包括:例如鈦 (Ti)、三氧化二鋁(Al2〇3)與二氧化給(Hf〇2)。這些 金屬微粒例如在反應室102與周圍環境的壓力差之下,能 夠被轉移至工件W的表面。 在實施例中’反應室102包括一原子層沈積(at〇mic layer deposition,ALD)反應器。工件W的厚度及/或基座 201030892 33234pif 108的設計能夠在工件的表面的上游處(upstream)產生一 失效體積區(dead-volume zone )或“失效區(dead Z〇ne) 1〇丨,藉以儲存第一前驅物(precursor)。失效區 10Γ可為停滯(stagnation)的一區域,而停滯原因是缺少 對流(convective fl0w)或是一迴流旋渦(redrculati〇n eddy),其中迴流璇渦是因為反應室1〇2及/或基座1〇8的 表面的不連續所引起。當第二前驅物引入至反應室1〇2 時,失效區101尤其會是缺點,因為會產生交叉脈衝 (cross-pulse)化學氣相沈積(chemicai vapor deposition, CVD),其中第一前驅物與第二前驅物會反應,而在反應 器102或處理工件w上形成污染物,且如此會造成工件w 上所沈積的膜層的厚度的變異。在前驅物的脈衝之間的長 時間清洗可以用來沖淨失效區1〇1,以避免交叉脈衝 CVD。然而’這樣的方法會導致生產量降低的缺點。此外, 由於晶圓有限的厚度,要完全地沖洗失效區1〇1是非常困 難的。 圖2A示意地繪示一半導體處理裝置20〇的範例實施 例’半導體處理裝置200包括一反應室202與一加載室203 (loading chamber)。加載室203實質上環繞反應室202。 反應室202包括一入口 204與一出口 206。反應物與清洗 氣體等氣體經由入口 204進入腔室202’而過量的反應物、 反應副產物與清洗氣體等氣體經由出口 206流出腔室 202。圖中所緣示的配置,如入口 204與出口 206的位置只 是用以示意’且可根據如在反應室202中進行的製程、所 201030892 33234pif 預期的氣體流動路徑等來做調整。在某些實施例中,入口 204包括分配系統,如喷淋頭(showerhead)。在某些 實施例中反應室202包括一交叉流(cross-flow)原子層 沈積室。腔室202包括一基板212,此基板212具有一開 =250。在某些實施例中,基板212的内緣(interior edge) 疋義出開口 250。在某些實施例中,基板212包括鈦。儘 管這裡所描述的裝置200是關於CVD反應器,裝置200 _ 亦可包括其他的半導體製程工具,例如乾式蝕刻機(dry etchers)、灰化機、快速退火機等’但不以此為限。 該裝置200可更包括一基座2〇8,設置成用以受到一 移動件210的操作而移動。基座208設置成用以保持一半 導體工件W。基座208可包括抬升銷(Uft_pins)及/或斷 流器(cutouts) ’以幫助加載或卸載工件w。基座208可 包括一真空系統,以在加載後將工件w保持在適當的地 方。該裝置200包括一埠(p〇rt) 214,用以從基座2〇8加 鲁 載或卸載工件W。額外的槔也是可行的,例如,一埠用以 加載、而另一埠用以卸載。當埠214關閉時,加載室2〇3 可相對於外界密封以形成一加載區。在某些實施例中,移 動件210包括一推進桿(pUshr〇d)或升降機(elevat〇r), 以帶動基座208作垂直的移動。在某些的實施例中,移動 件210設置成用以旋轉設置在基座2〇8的工件w。該移動 件210設置成用以移動基座2〇8,且因此設置在基座2〇8 上的工件W朝向基板212的開口 250。該裝置200更包括 控制系統211 ’設置成:在工件貿於反應室2〇2内進行處 201030892 33234pif 理的期間,藉由非密封間隙216從基板212分隔基座208。 雖然控制系統211繪示為與移動件21〇溝通連接,但控制 系統211可與該裝置2〇0的其他構件溝通連接,例如以下 所述的基座或是基板等相似物。在某些的實施例中,控制 系統211設置成··一旦基座2〇8位於處理位置時停止基 座208的移動,其中在處理位置時、基座2〇8藉由間隙216 而從基板212進行分隔。 圖2B繪示間隙216的放大圖。在某些實施例中,間 隙216具有至少約為0.001英吋(大約25//m)或至少約 為0.005英吋(大約128//m)的厚度。在某些實施例中, 間隙216具有約介於o.ooi英对(大約25 #m)與〇 〇5英 叫"(大約1275//m)之間的厚度。在所緣示的實施例中, 於腔室202的内部、與腔室202的外部之間沒有實體密封。 在某些實施例中,處理區是形成在腔室202中。在某些實 施例中’於反應室202中處理工件W的期間,加載室203 流體地連接反應室202。每當工件W在腔室202中被處理 時,基座208與基板212不會有實體上的接觸,而可有益 於減少或消除前述的金屬微粒產生的機制。於是,這些微 粒不會轉移至工件W的表面’藉此降低在工件w上所形 成的元件中的缺陷。 非密封的間隙(unsealed gap)在過去被視為不適合於 某些反應器。例如’緊緊的密封(tight seal)是在嘗試降 低或消除前驅物漏出間隙所得到的結果,其中前驅物漏出 間隙可能會造成加載室203的腐钮、在加載室203有沈積 201030892 33234pif 與微粒形成、因為反應物散失所造成的處理時間增加以及 擾亂反應室202的層流區域(laminar flow fieid )。然而, 本發明的至少一觀點是:可藉由惰性氣體(inertgas)清洗 垂直間隙216來減少或消除上述的擔憂。在某些的實施例 中’加載室203包括一個或更多的入口 205,其中入口 205 定義在基座208與腔室202之間。在某些的實施例中,加 載室203包括一個或更多的出口 207,其中出口 207定義 ❹ 在基座2〇8與腔室202之間。惰性氣體能夠從入口 2〇5流 經由加載室203、且通過間隙216流入腔室202中以產生 擴散屏障(difftision barrier)。在某些實施例中,惰性氣 體包括氮氣,且氮氣的流速約在〇標準毫升每分鐘 (Standard Cubic Centimeter per Minute, SCCM )與 200sccm之間。其他像是氬氣等的惰性氣體也是可行的。 流速可根據以下變數來增加或減少,其中變數例如是 反應室202的氣體流速、基座208及/或基板212的尺寸、 間隙216的厚度與結構、以及惰性氣體的種類。在某些實 施例中’惰性氣體的流速大於約200sccm。在某些實施例 中’至少部分的惰性氣體經由出口 207而流出腔室2〇3。 圖中所繪示的配置,例如入口 205與出口 207的位置僅為 示意,且可根據如在反應室202中進行的處理、所預期的 氣體流動路徑等來做調整。 在某些實施例中,在加載室203的壓力高於反應室2〇2 中的壓力,造成氣體在處理工件w的期間從加載室2〇3 經由間隙216流入處理室202。在某些實施例中,加載室 11 201030892 33234pif 203的壓力約是以0.1托耳(Torr)(大約13帕(pa)) 與5 Torr (大約667 Pa)之間高於處理室2〇2的壓力。在 某些實施例中,惰性氣體遮幕(curtain)可降低或避免前 驅物與反應副產物從反應室202洩漏至周圍環境或是加載 室203。此外,藉由將氣體流經間隙216來清洗失效區可 有益地降低交叉脈衝CVD,而不會拖長清洗時間。降低交 叉脈衝CVD也能夠減少膜層在清洗氣體流區域的生成。 屏障氣流(barrier flow)也能降低在基座2〇8與基板212 之間的區域中的ALD沈積。於是’即使基座208與基板 212之間有接觸產生,例如在檢查反應器的上昇整合率 (rate of rise integrity)的期間,較少的微粒會流出。失效 體積在工件W有限的厚度之下幾乎是不可能完全地消 除,而清洗失效體積能夠減少或消除CVD來源、並減少 或消除在惰性氣體從加載室203流至反應室202的區域上 的膜層生成。 在某些選擇性的實施例中,反應室202的壓力高於加 載室203的壓力’造成在處理工件w的期間、氣體從反應 Ο 室202經由間隙216流入加載室203。在某些實施例中, 處理室202的壓力約是以〇.1 Torr (大約13 Pa)與5 Torr (大約667 Pa)之間高於加載室203的壓力。在某些實施 例中’惰性氣體遮幕能夠減少或避免污染物從加載室203 流入反應室202。 圖3A示意地繪示半導體處理裝置3〇〇的一範例實施 例,此半導體處理裝置300包括反應室302與加載室303。 12 201030892 33234pif 該裝置300與前述的裝置2〇〇相類似,除了加載室3〇3配 置於反應室302的下方、而不是實質上圍繞反應室3〇2。 當f動件310使基座308朝向基板312的開口 35〇移動時, 非密封間隙316留在基座308與基板312之間。圖3B與 圖3C繪示間隙316的放大圖。繪示於圖3B的間隙316的 第一部分316b大於繪示於圖3C的間隙316的第二部分 316c,以使得間隙316是不對稱的。在某些實施例中,間 ❹ 隙316會因為製造限制而為不對稱。在某些實施例中,間 隙316是根據設計而不對稱。舉例來說,藉由具有相對較 大的間隙316b而可翻在工件|的上游處發生較多的清 洗,藉由相對較小的間隙316c而可預期在工件w的下游 處發生較少的清洗。 圖2A〜圖3C繪示的間隙216、316的形式可視為垂 直間隙,因為基座208、308的至少一部分從基板212、312 垂直地分隔開來。圖2A〜圖3C繪示的間隙216、316的 形式可視為曲折(labyrinth)的間隙,因為基座208、308 ® 的在第一位置從基板212、312垂直地分隔開來、且在第二 位置從基板212、312水平地分隔開來。曲折的間隙能夠對 流體流動(fluid flow)產生一屏障,還有避免基座2〇8、 3〇8與基板212、312的接觸。基座2〇8、3〇8及/或基板212、 312可成型為不同的形狀,使得間隙216、316只為垂直的。 圖4A示意地繪示半導體處理裝置4〇〇的一實施例’ 且半導體處理裝置400與前述的裝置·相類似,除了基 座408與基板412的形狀成型為:使得間隙416包括實質 13 201030892 33234pif 上環繞基座408的環狀水平間隙。在某些實施例中,基座 408的尺寸設計為:穿過開口 45〇進入反應室4〇2時不會 接觸基板412,從而允許可在反應室4〇2中調整基座4〇8 與基座408上所保持的工件w的位置。圖4B繪示間隙416 的放大圖。由於在水平間隙中形成的直線路徑,使得水平 間隙可減少對於流體流動的屏障。具有相同或不同的尺寸 的垂直、水平與曲折間隙的組合,可有益於某些應用。例 如,藉由具有相對較大的水平間隙416而可預期在工件1 的上游處發生更多的清洗,藉由相對較小的曲折間隙316 而可預期在工件W的下游處發生較少的清洗。 圖5A示意地繪示一個或更多的襯墊52〇的一實施 例,其中襯墊520設置成用以從基板512分隔基座508。 間隙516包括在基板512下方的垂直間隙。在某些實施例 中,間隙516 —般為環狀且介於襯墊520之間。在某些實 施例中’襯墊520包括Celazole襯墊,但其他的材料也是 可行的。Celazole在壓縮下具有所希望的特性,且能夠與 鈦產生潤滑的接觸。在某些實施例中,襯塾52〇具有介於 〇 約0.001英寸(大約25//m)與約〇.〇5英对(大約1275 /zm)之間的高度。襯墊520避免了基座508接觸基板512, 從而有益地減少或消除因基座508與基板512的實體接觸 而造成之金屬微粒的產生。在如圖5A所緣示的實施例中, 襯堅520接觸基座508與基板512。在某些實施例中,襯 墊520連接基板512的一較低表面,且設置成在處理工件 w的期間、用以接觸基座508的周圍邊緣(peripheral I S3 14 201030892 33234pif edge)。在某些可選擇的實施例中,襯墊520連接至基座 508的周緣,且設置成在處理工件w的期間用以接觸基板 512的一較低表面。然而,在處理工件w的期間,襯墊520 從基座508或基板512分隔開的實施例亦是可行的。在此 類的實施例中,襯墊520的高度小於間隙516的垂直厚度, 且可作為預防的計量角色,以避免基座508與基板512之 間的接觸。 ❹ 圖5B示意地繪示一個或更多的可調整襯墊53〇 (adjustable pad)的一實施例,其中可調整襯墊530設置 成用以從基板512分隔基座508。各個襯墊530具有可調 整的尚度。襯墊530包括:落地襯墊532、襯塾安裝螺絲 534、可調整螺絲536以及鎖緊螺帽(jam nut) 538,而其 交互關係在後面有詳述。圖5B也繪示基座508與基板512 成型的一實施例,其中基座5〇8與基板512成型為使得間 隙516包括一較長的曲折。在某些實施例中包含襯墊52〇、 530,一部分的基座5〇8與基板512的一部分藉由襯墊 Ο 520、530有實體上的接觸,而不需緊鄰間隙516〇 圖6A示意地緣示包括三個襯墊52〇的基座。選 擇性地,基座508可包括三個襯墊53〇、其他形式的襯墊 或其組合。基座508被描繪為維持工件w,以表現襯墊52〇 可位於遠離工件w的表面。圖6B緣示基座5〇8包括四個 襯塾520的透視圖。選擇性地,基座可包括四個概塾 530、其他形式的襯塾或其組合。基座5〇8具有小孔 (aperture) 509 ’以讓輔助加載與卸載工件w的抬升銷通 15 201030892 33234pif 過。基座508可包括任何數量的襯墊,包括〇個。例如, 基座508可包括至少一襯墊52〇、53〇、至少二概藝、 530、至少二襯墊520、530、至少四襯墊52〇、53〇等等。 在某些實施例t,多個的襯墊52〇、53〇對稱地環繞配置於 基座508的周圍。 、
圖7A與圖7B繪示在處理工件w的期間,校準可調 整襯墊530來維持間隙516的一個範例方法。如圖7a所 示,托住基板512面朝下、較佳地在軟及/或平的表面上。 填隙片(shim) 540的材料可選擇為減少基板512及/或基 座508污染的材料。多個填隙片54〇接著被垂掛穿過開= 550。第一部分的填隙片54〇托住在基板512上,而同時第 二部分的填隙片540落於基板512的開口 55〇中。基座5〇8 以面朝下而置入基板512的開口 550中。在實施例中,間 隙希望是均勻的,基座508的中心對準為在基座5〇8與基 板512的開口 550之間有實質上相同的間距。基座5〇8的 重量推壓填隙片540進入基座508與基板512的縫隙 (clearance)。現在參考圖,襯塾530包括:落地襯墊 532、襯整安裝螺絲534、可調整螺絲530以及鎖緊螺帽 538。襯墊安裝螺絲534機械性地耦接至可調整螺絲536。 當可調整螺絲536旋轉時,落地襯墊532橫向地移動,如 箭頭所示。在填隙片540就定位之下,可調整螺絲536旋 轉直到襯墊530中的落地襯墊532接觸基板512為止。當 保持可調整螺絲536在定位時,鎖緊螺帽538會鎖緊,於 是可調整螺絲536與落地襯墊532在一安全的位置上相互 16 201030892 33234pit 鎖固’使得襯墊530的厚度根據填隙片540的厚度被校準。 右疋基座508被抬升’填隙片540被抽出,且基座jog再 次面朝下置於基板512上,被校準的襯墊53〇將會藉由間 隙516從基板512分隔基座508,如圖5B所描繪。此校準 方法能夠快速且有效,且能減少或消除魔大及/或代價高的 固定裝置(fixtures)與量器(gauges)。此校準方法也能 夠補償部分的公差變異。 φ 圖8A示意地繪示另一個範例的校準裝置與方法。上 板(top plate) 852放置於基板812之上。上板852提供了 基板812的開口 850中的一傳導表面,以提供一更接近的 傳導表面相對於校準工件854而量測電容量 (capacitance) ’從而提高校準的準確性。圖8B為上板 852的一範例實施例的上視立體圖。請再參考圖8A,校準 工件854取代了工件W而配置於基座8〇8上。圖8C為校 準工件854的一範例實施例的上方正視圖。校準工件854 包括:多個距離感測器858。校準工件854更可包括:狀 © 態燈856與電池。在某些實施例中,校準工件854設置成 用以透過連接器或是無線地而與控制系統811相溝通連 接’如圖8A的虛線所示。在某些實施例中,校準工件854 包括:WaferSenseTM的自動間隙調整系統(Aut〇 Gapping
System) ’ 可從 CyberOptics® Semiconductor, Inc. of
Beaverton, Oregon 取得。 移動件810設置成:用以在電容量指示基座8〇8從基 板812分隔了具有所希望尺寸的非密封間隙816時,停止 17 201030892 33234pif 基座808的移動,其中電容量是由控制 校準工件8M隨後被移除,是移動=已 被程式化而停止基座·的移動,使得 =2的後續移動韓持非密關隙816。反應室的^ 邛刀,例如入口喷淋頭也可包括第二傳導表面。對於 816僅為水平的實施例,此鮮方法特別有益。此校準方 能夠消除硬停止師top)娜^
…圖8D為兩傳導表面862、86之間的電容量的示意圖。 電容量是在由絕緣物所分隔的兩傳導表面之間的電氣性 質。第一傳導表面862與第二傳導表面864以一距離d分 隔二,,,第一傳導表面862與第二傳導表面864之間二 電容量是和表面862、864之間面積的乘積與其間材料的介 電吊數呈正比,且與距離d呈反比。當表面862、864移動 靠近在一起時,電容量增加,且當表面862、864移動相互 遠離,電容量降低。因此,在上板852與校準工件854之 間的絕緣物的電容量可以準確地與上板852及校準工件 854之間的距離相關聯。 在選擇性的實施例中,基板812可包括第一傳導表 面’且基座808可包括第二傳導表面。當基座808相對於 基板812移動時,第一傳導表面與第二傳導表面之間的電 容量改變。控制系統811與基座808及/或基板相溝通迷 接’控制系統811包括電容量測量裝置、且設置成用以量 測基板812的第一傳導表面與基座808的第二傳導表面之
18 201030892 33234pif 間的電容量。在某些實施例中,停止基座8〇8的移動包括: 顯示出所量測的電容量近似於-預設值(predetermined value)。在某些實施例中,停止基座8〇8的移動包括:顯 示出根據所量測的電容量而決定的一距離或是其他的數值 近似於-預設值。當所量測的電容量或是基於該電容量的 計算值顯示出基座808藉由預期尺寸的非密封間隙816從 基板812分隔時,則基座808停止。在某些實施例中,校 φ 準方法的組合也可被使用。例如,校準工件854可用來提 供間隙816,且在基板812表面與基座8〇8之間的電容量 可以被測量’以避免基板812與基座808接觸。 圖9A〜圖9D繪示在圖3的該裝置3⑽中處理工件w 的一範例方法。然而,此方法可以被應用於在此所述的該 裝置,如同其他合適的半導體工件處理裝置。在圖9A中, 基座308位在一縮回位置(retractedp〇siti〇n),且處理室 302與加載室303因為埠314關閉而密封。在所繪示的實 施例中,多個抬升銷342在保持工件W的基座3〇8的部分 的上面進行延伸,例如穿過圖6B所示的小孔509。在圖 9B中’蜂314開啟來允許工件w被加載於基座上。在某 些實施例中,工件w為半導體工件。工件W放置於抬升 銷342上’且抬升銷342降低使得工件%被基座3〇8所托 住。在某些實施例中,真空被施加來維持工件W固定至基 座308。在某些實施例中,入口 305及/或出口 307會開啟 而允許氣體在加載期間流經加載室303。 圖9C綠不出工件W被加載於基座308之後,基座308 19 201030892 33234pif 朝反應室302的基板312㈣口 350移動的示专圖。合基 座308位於一處理位置時,使基座3〇8的移動停止其"中, 基座308在處理位置時、基座308藉由非密封間隙^6而 與基板312分隔。在某些實施例中’基座3〇8事先地被校 準以停止於處理位置。例如,基座3〇8可包括已校準的多 個可調整襯墊530,如參考圖7A與圖7B的前述說明。在 某些此類的實施例中,基座308的停止包括:在基板312 與基座308之間接觸多個Celazole襯墊520、530。就另一 _ 範例而§,移動件310可基於一電容量校正工件來被校 正,如參考圖8A〜圖8D的前述說明。在某些實施例中, 當基座被往上地延伸時,使用即時測量來使基座308從基 板312被分隔開,例如包括電容量及/或距離橫越。當間隙 316被維持時’使工件w在處理室302中被處理。在某些 實施例中,在反應室302中的工件W的處理包括:化學氣 相沈積。在某些實施例中,在反應室302中的工件W的處 理包括:原子層沈積。處理氣體經由入口 304流入反應室 302 ’而與工件W交互作用,且經由出口 306流出反應室 ❹ 302。在某些實施例中,氮氣之類的氣體經由入口 305流入 加載室303,經由間隙316流入反應室302,且經由出口 306流出反應室302。在某些的此類實施例中,出口 307 會被開啟來調整從加載室303流出、而進入反應室302的 氣流。如圖9D所繪示,在處理之後,基座308被收回,. 且工件W經由埠314被卸載。在某些實施例中,真空會被 釋放,使得工件W不再固定至基座308。抬升銷342被抬 20 201030892 33234pif =從if08昇起工㈣至機器人或是其他移除裝置能 子取、方。在某些實施例中,入口 3〇5及/或出口搬 會被開啟來允許氣體在卸載期間流經加載室3〇3。 雖然本發明已在某些實施例與範例的内文所揭露,但 本領域技術人貞將能了解本發明在特定實關下的延伸及 /▲或本發明的使用、明顯的修改與等效物。例如,圖】的失 效區101可靖由從加载线動紐⑽的方絲被減少 ❹,除’例如’ _專料洗供給氣體來銳微粒從反應 室102出去。此外,在本發明的數個變形已表現與詳述之 下,對於本領域技術人員來說,根據揭露内容來了解其他 在本發明範圍内的修改,將會是明顯易懂。例如,本發明 不限制在此所述的在基座與基板間維持間隙的方法。同時 考量過的是,特定特徵與實施例的概念的不同組合或子組 合也落於本發明的範圍内。需了解的是,不同的特徵與所 揭實施例的概念也能和另一個為了形成所揭露發明的不同 模式來組合或是取代。例如,間隙可以分別在圖2A與圖 © 4A的裝置200、400中成為不均勻。就另一範例而言 ',加 載室303、403可實質上分別環繞圖3A與圖4A的裝置 300、400的反應室302、402。因此’可預期的是,這裡所 揭露的本發明的範圍不應受限於前述特定實施例,但只應 根據對於後面的專利範圍作公平的判讀。 【圖式簡單說明】 圖1示意地繪示半導體處理裝置的一範例的剖面。 圖2A示意地繪示半導體處理裴置的另一範例的剖 21 201030892 33234pif 面。 圖2B為圖2A的區域B的放大圖。 圖3A示意地繪示半導體處理裝置的又一範例的剖 面。 圖3B為圖3A的區域B的放大圖。 圖3C為圖3A的區域C的放大圖。 圖4A示意地繪示半導體處理裝置的再一範例的剖 面。 圖4B為圖4A的區域B的放大圖。 圖5A示意地緣示襯墊的一範例實施例。 圖5B示意地緣示襯塾的另一範例實施例。 圖6Α為基座的一範例實施例的上方正視圖。 圖6Β為基座的另一範例實施例的上方透視圖。 圖7Α與圖7Β繪示校準可調整襯墊的一範例方法。 圖8Α〜圖8D示意地缘示校準裝置及方法的一範例。 圖9Α〜圖9D示意地繪示在圖3Α的該裝置中處理工 件的一範例方法。 【主要元件符號說明】 100 :半導體處理裝置 101 ·失效區 102、202、302 :反應室 104、204、205、304、305 :入口 106、206、207、307 :出口 108、208、308、408、508、808 :基座 201030892 J3234plt 112、212、312、412、512、812 :基板 150、250、350、550、850 :開口 200、300、400 :半導體處理裝置 203、303 :加載室 210、310、810 :移動件 211 :控制系統 214、314 :埠 ©216、316、416、816 :間隙 316b :第一部分 316c :第二部分 342 :抬升銷 509 :小孔 520 :襯墊 530 :可調整襯墊 532 :落地襯墊 534 :襯墊安裝螺絲 ® 536:調整螺絲 538 :鎖緊螺帽 540 :填隙片 811 :控制系統 852 :上板 854 :校準工件 856 :狀態燈 858 :距離感測器 23 201030892 33234pif 862、864 :兩傳導表面 d :距離 W :工件
t S 1 24
Claims (1)
- 201030892 33234pit 七、申請專利範圍: 1. 一種半導體處理裝置,包括: 一反應室,包括一基板、且該基板具有一開口; 一可移動的基座’設置成保持一工件; 一移動件,設置成將被保持於該基座上的一工件朝著 該基板的該開口移動;以及 一控制系統’設置成在處理位於該反應室中的一工件 ® 的期間,藉由非密封的一間隙將該基座從該基板分隔開。 2·如申請專利範圍第1項所述之半導體處理裝置,其 中間隙具有至少為25ym的一厚度。 3. 如申請專利範圍第]項所述之半導體處理裝置,更 包括: 多個Celazole襯墊’設置成將該基座從該基板分隔 開,其中該間隙包括:在該基板下方的一垂直間隙。 4. 如申請專利範圍第3項所述之半導體處理裝置,其 ❿ 中該間隙在該些襯墊間大致呈環狀。 5. 如申請專利範圍第3項所述之半導體處理裝置,其 中該些襯墊連接至該基板的一較低表面、且設置成在處理 ‘一工件的期間接觸該基座的一周圍邊緣。 6·如申請專利範圍第3項所述之半導體處理裝置,其 中該些襯墊連接至該基座的一周圍邊緣、且設置成在處理 .工件的期間接觸該基板的一較低表面。 7.如申請專利範圍第3項所述之半導體處理裝置,其 中每一該些襯墊具有一可調整高度。.- 25 201030892 33234pif 8. 如申請專利範圍第3項所述之半導體處理裝置,其 中該些襯墊包括至少三個襯塾。 9. 如申請專利範圍第丨項所述之半導體處理裝置,其 中該基板包括鈦。 ’、 10. 如申請專利範圍第丨項所述之半導體處理裝置, 其中該基板包括-第—傳導表面’其巾該基座包括一第二 傳導表面’而該裝置,更包括:、 一電容量測量裝置,設置成測量該第一傳導表面與該 第二傳導表面之間的電容量。 ◎ 11. 如申请專利範圍第1項所述之半導體處理裝置, 更包括: 加載至,位於該反應室的下方,其中在處理位於該 反應室中的-工件的期間,該加載室透過該間隙而流體連 接至該反應室。 12. 如中請專職圍第丨項所述之半導體處理裝置, 其中該基座的尺寸被設定為通過該開口,且其中該間隙包 括實質上環繞於該基座的一環狀水平間隙。 13. 如申請專利範圍第丨項至第12項中一所 半導體處理裝置,其中該反應室,包括: 項所述之 一交叉流原子層沈積反應器。 14. 一種半導體工件的處理方法,包括: 加載一半導體工件至可移動的一基座上; 朝-反應室中的-基板中的_開口而移座· 當該基座位於—處雜置時,停止職朗it其 26 201030892 中該基座位於該處理位置時,該基座藉由非密封的一間隙 而從該基板分隔開;以及 ’、 於該處理位置處理該工件、且同時維持該間隙。 15·如申請專利範圍第14項所述之半導體工件的處 理方法,其中該工件的加載是在一加載室中執行,且其中 處理該工件包括: 、 展該加載室中維持比該處理室中高的一壓力。 ❹ ❹ 16. 如申請專利範圍第15項所述之半導體工件的處 理方法,其中在該加載室中的該壓力比該處理室高約13 帕與約667帕之間。 17. 如申請專利範圍第15項所述之半導體工件的處 理方法’其中維持較高的該壓力包括: 在處理的期間流送氮氣至該加載室中。 18. 如申請專利範圍第17項所述之半導體工件的處 理方法’其中該氮氣的流送是: 在約〇標準毫升每分鐘與約2〇〇標準毫升每分鐘之 i9.如申請專利範圍第14項所述之半導體工件的處 万法,其中移動的停止包括: 以多個Celazole襯墊接觸於該基板與該基座之間。 如中請專利範圍第14項所述之半導體工件的處 方其中該基板包括-第-傳導表面,其中 括一第二傳導表面, 其中該基板的移動包括:量測該第一傳導表面與該第27 201030892 33234pif 二傳導表面之間的一電容量,且 其中移動的停止包括:指示出量測的該電容量是近似 於一預設值。 21·如申請專利範圍第14項至第20項中任一項所述 之半導體工件的處理方法,其中該工件的處理包括:原子 層沈積。 22.如申請專利範圍第14項中所述之半導體工件的 處理方法,更包括:當該基座位於該處理位置時,校準該移動件至停止。 23.如申請專利範圍第22項中所述之半導體工件的 處理方法,該移動件的校準包括: 技住該基板面朝下; 垂掛多個填隙片橫跨該基板的該開口; 使該基座的中心對準該基板的該開口; 將面朝下的該基座置入該基板的該開口;旋轉一可調整螺絲直到該基座的一襯墊接觸該基 板;以及 保持該可調整螺絲的位置、且同時鎖緊一鎖緊螺帽。 24.如申請專利範圍第22項中所述之半導體工件的 處理方法’鄉動件峨準包括: ,該開口移動該基座,該基座包括一第一傳導表面, 且該基板包括一第二傳導表面; 量测該第-傳導表面與該第二傳導表面之間的 谷重;以及 28 201030892 當該量測的電容量指示出,藉由具有所希望的尺寸的 未密封的一間隙使該基座從該基板分隔開時,設定該移動 件去停止該基座。 25 .如申請專利範圍第22項中所述之半導體工件的 處理方法,該移動件的校準包括: 加載一校準工件於可移動的該基座上; 朝該開口移動該基座,該校準工件包括一第一傳導表 ❹ 面’且該基板包括一第二傳導表面; ☆量測該第—傳導表面與該第二傳導表面之間的-電 當該制的電容量指#,#由具朗希望尺寸的 二封的-間P冑使該基座從該基板分隔開時設 去停止該基座;以及 勒件 卸載該校準工件 ❹ 29
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/350,793 US8216380B2 (en) | 2009-01-08 | 2009-01-08 | Gap maintenance for opening to process chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201030892A true TW201030892A (en) | 2010-08-16 |
TWI506721B TWI506721B (zh) | 2015-11-01 |
Family
ID=42311965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098142134A TWI506721B (zh) | 2009-01-08 | 2009-12-09 | 處理室之開口的間隙維持 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8216380B2 (zh) |
KR (1) | KR101508370B1 (zh) |
TW (1) | TWI506721B (zh) |
WO (1) | WO2010080252A1 (zh) |
Families Citing this family (357)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
JP5347294B2 (ja) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US8216380B2 (en) * | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) * | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
TW201327897A (zh) * | 2011-10-28 | 2013-07-01 | Applied Materials Inc | 光伏單元的背點接觸製程 |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
TWI622664B (zh) | 2012-05-02 | 2018-05-01 | Asm智慧財產控股公司 | 相穩定薄膜,包括該薄膜之結構及裝置,及其形成方法 |
US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9290843B2 (en) | 2014-02-11 | 2016-03-22 | Lam Research Corporation | Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
JP5800964B1 (ja) * | 2014-07-22 | 2015-10-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) * | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) * | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US10774422B2 (en) | 2018-06-01 | 2020-09-15 | Asm Ip Holding B.V. | Systems and methods for controlling vapor phase processing |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
KR102582395B1 (ko) | 2018-11-12 | 2023-09-26 | 삼성디스플레이 주식회사 | 커버 윈도우용 지그 |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
TWI685059B (zh) * | 2018-12-11 | 2020-02-11 | 財團法人國家實驗研究院 | 半導體反應裝置與方法 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
KR20210113043A (ko) * | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
US11685996B2 (en) * | 2021-03-05 | 2023-06-27 | Sky Tech Inc. | Atomic layer deposition device |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN114855146A (zh) * | 2022-04-26 | 2022-08-05 | 江苏微导纳米科技股份有限公司 | 半导体设备及反应腔 |
Family Cites Families (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828224A (en) * | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
US5435682A (en) * | 1987-10-15 | 1995-07-25 | Advanced Semiconductor Materials America, Inc. | Chemical vapor desposition system |
US4889609A (en) * | 1988-09-06 | 1989-12-26 | Ovonic Imaging Systems, Inc. | Continuous dry etching system |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
JP2644912B2 (ja) | 1990-08-29 | 1997-08-25 | 株式会社日立製作所 | 真空処理装置及びその運転方法 |
JP3020567B2 (ja) | 1990-08-20 | 2000-03-15 | アネルバ株式会社 | 真空処理方法 |
JPH04118925A (ja) | 1990-09-10 | 1992-04-20 | Fujitsu Ltd | 複合型処理装置 |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
JP3176118B2 (ja) | 1992-03-27 | 2001-06-11 | 株式会社東芝 | 多室型基板処理装置 |
KR100267617B1 (ko) * | 1993-04-23 | 2000-10-16 | 히가시 데쓰로 | 진공처리장치 및 진공처리방법 |
US5647945A (en) * | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
JP3050354B2 (ja) | 1993-09-20 | 2000-06-12 | 東京エレクトロン株式会社 | 処理方法 |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
JP3394293B2 (ja) * | 1993-09-20 | 2003-04-07 | 株式会社日立製作所 | 試料の搬送方法および半導体装置の製造方法 |
JP3486821B2 (ja) | 1994-01-21 | 2004-01-13 | 東京エレクトロン株式会社 | 処理装置及び処理装置内の被処理体の搬送方法 |
JP3254482B2 (ja) | 1994-03-31 | 2002-02-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのクリーニング方法 |
JPH07283147A (ja) | 1994-04-15 | 1995-10-27 | Toshiba Corp | 薄膜形成方法 |
US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
US5651868A (en) * | 1994-10-26 | 1997-07-29 | International Business Machines Corporation | Method and apparatus for coating thin film data storage disks |
JP3644036B2 (ja) * | 1995-02-15 | 2005-04-27 | 株式会社日立製作所 | 半導体装置の製造方法および半導体製造装置 |
US5586585A (en) * | 1995-02-27 | 1996-12-24 | Asyst Technologies, Inc. | Direct loadlock interface |
JP3270852B2 (ja) * | 1995-04-20 | 2002-04-02 | 東京エレクトロン株式会社 | 圧力調整装置及びこれを用いた部屋の連通方法 |
JP3288200B2 (ja) * | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5820692A (en) * | 1996-01-16 | 1998-10-13 | Fsi Interntional | Vacuum compatible water vapor and rinse process module |
US5980195A (en) * | 1996-04-24 | 1999-11-09 | Tokyo Electron, Ltd. | Positioning apparatus for substrates to be processed |
US5787799A (en) * | 1996-08-26 | 1998-08-04 | Versa Technologies, Inc. | Liquid baster |
US5810942A (en) * | 1996-09-11 | 1998-09-22 | Fsi International, Inc. | Aerodynamic aerosol chamber |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US6048154A (en) * | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
US5879574A (en) * | 1996-11-13 | 1999-03-09 | Applied Materials, Inc. | Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process |
US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US6224312B1 (en) * | 1996-11-18 | 2001-05-01 | Applied Materials, Inc. | Optimal trajectory robot motion |
JPH10270527A (ja) | 1997-03-21 | 1998-10-09 | Ulvac Japan Ltd | 複合型真空処理装置 |
US6042523A (en) * | 1997-06-06 | 2000-03-28 | Graham; Gary A. | Therapeutic exercise apparatus and method |
US6312525B1 (en) * | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
JP3425592B2 (ja) * | 1997-08-12 | 2003-07-14 | 東京エレクトロン株式会社 | 処理装置 |
US6042623A (en) | 1998-01-12 | 2000-03-28 | Tokyo Electron Limited | Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor |
KR19990076407A (ko) | 1998-03-31 | 1999-10-15 | 윤종용 | 반도체장치의 제조공정에 있어서의 박막 형성방법 |
JPH11288992A (ja) | 1998-04-06 | 1999-10-19 | Nissin Electric Co Ltd | 被処理物体搬送チャンバ |
US6161311A (en) * | 1998-07-10 | 2000-12-19 | Asm America, Inc. | System and method for reducing particles in epitaxial reactors |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
US6409837B1 (en) * | 1999-01-13 | 2002-06-25 | Tokyo Electron Limited | Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor |
US6106634A (en) * | 1999-02-11 | 2000-08-22 | Applied Materials, Inc. | Methods and apparatus for reducing particle contamination during wafer transport |
FI118342B (fi) * | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US6251195B1 (en) | 1999-07-12 | 2001-06-26 | Fsi International, Inc. | Method for transferring a microelectronic device to and from a processing chamber |
KR100767762B1 (ko) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
JP2001284433A (ja) * | 2000-01-28 | 2001-10-12 | Sony Corp | 基板移載装置及び基板移載方法 |
JP3723712B2 (ja) * | 2000-02-10 | 2005-12-07 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US6488778B1 (en) * | 2000-03-16 | 2002-12-03 | International Business Machines Corporation | Apparatus and method for controlling wafer environment between thermal clean and thermal processing |
JP3676983B2 (ja) * | 2000-03-29 | 2005-07-27 | 株式会社日立国際電気 | 半導体製造方法、基板処理方法、及び半導体製造装置 |
US7020891B1 (en) * | 2000-09-28 | 2006-03-28 | Intel Corporation | Internet domain and time index based video email system |
JP2003059997A (ja) | 2001-08-08 | 2003-02-28 | Rohm Co Ltd | 処理装置および処理方法 |
US6672864B2 (en) * | 2001-08-31 | 2004-01-06 | Applied Materials, Inc. | Method and apparatus for processing substrates in a system having high and low pressure areas |
US7204886B2 (en) * | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US6899507B2 (en) * | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
TWI273642B (en) * | 2002-04-19 | 2007-02-11 | Ulvac Inc | Film-forming apparatus and film-forming method |
KR101050275B1 (ko) * | 2002-05-21 | 2011-07-19 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 프로세싱 도구 내 챔버 간의 상호 오염 감소 방법 |
US7521089B2 (en) * | 2002-06-13 | 2009-04-21 | Tokyo Electron Limited | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers |
US7195679B2 (en) * | 2003-06-21 | 2007-03-27 | Texas Instruments Incorporated | Versatile system for wafer edge remediation |
JP4417669B2 (ja) * | 2003-07-28 | 2010-02-17 | 日本エー・エス・エム株式会社 | 半導体処理装置および半導体ウエハーの導入方法 |
US7235482B2 (en) * | 2003-09-08 | 2007-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology |
WO2005042160A2 (en) * | 2003-10-29 | 2005-05-12 | Asm America, Inc. | Reaction system for growing a thin film |
US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7756599B2 (en) * | 2004-10-28 | 2010-07-13 | Tokyo Electron Limited | Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program |
US7521374B2 (en) * | 2004-11-23 | 2009-04-21 | Applied Materials, Inc. | Method and apparatus for cleaning semiconductor substrates |
JP2006176826A (ja) * | 2004-12-22 | 2006-07-06 | Canon Anelva Corp | 薄膜処理装置 |
US20070116873A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US8216380B2 (en) * | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US8287648B2 (en) * | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
-
2009
- 2009-01-08 US US12/350,793 patent/US8216380B2/en active Active
- 2009-12-03 KR KR1020117015700A patent/KR101508370B1/ko active IP Right Grant
- 2009-12-03 WO PCT/US2009/066510 patent/WO2010080252A1/en active Application Filing
- 2009-12-09 TW TW098142134A patent/TWI506721B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI506721B (zh) | 2015-11-01 |
WO2010080252A1 (en) | 2010-07-15 |
KR20110106871A (ko) | 2011-09-29 |
US8216380B2 (en) | 2012-07-10 |
US20100173432A1 (en) | 2010-07-08 |
KR101508370B1 (ko) | 2015-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201030892A (en) | Gap maintenance for opening to process chamber | |
KR102617521B1 (ko) | 웨이퍼 후면 에지 및 노치에서 증착을 제거하기 위한 방법들 및 웨이퍼 에지 콘택트 하드웨어 | |
TWI688671B (zh) | 減少晶圓邊緣處之背側沉積 | |
CN107641797B (zh) | 晶片在槽中居中以提高晶片边缘的方位角厚度均匀性 | |
TWI515816B (zh) | 半導體製程室中減少污染的方法及其裝置 | |
JP5916608B2 (ja) | ロードロック装置 | |
TW201843341A (zh) | 氣體供給裝置、氣體供給方法及成膜方法 | |
TW201635329A (zh) | 載送環構造及具有該構造的腔室系統 | |
JP2017216458A (ja) | 間隙検出用のインテリジェントなハードストップと制御機構 | |
KR20070091332A (ko) | 웨이퍼 지지핀 어셈블리 | |
JP6258657B2 (ja) | 成膜方法および成膜装置 | |
JP2009188399A (ja) | 半導体基板用クランプ機構及び基板搬送方法 | |
KR20100110822A (ko) | 열처리 장치 및 그 제어 방법 | |
TWI806915B (zh) | 半導體加工設備 | |
JP2012104808A (ja) | 熱処理装置および熱処理方法 | |
JPH1180950A (ja) | ウェハをアラインメントさせる装置および方法 | |
JP2013040398A (ja) | 成膜装置及び成膜方法 | |
US20130108792A1 (en) | Loading and unloading system for thin film formation and method thereof | |
TWI445111B (zh) | 用以在基板處理系統中進行預防性維護的方法 | |
JP2006274316A (ja) | 基板処理装置 | |
US20190371572A1 (en) | Film-forming method and film-forming apparatus | |
JP2024002304A (ja) | 成膜装置 | |
KR20210158333A (ko) | 통기형 서셉터 | |
KR20210007850A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JP2013201333A (ja) | 基板処理装置、半導体装置の製造方法及び基板処理方法 |