TW200837213A - Plasma enhanced cyclic chemical vapor deposition of silicon-containing films - Google Patents
Plasma enhanced cyclic chemical vapor deposition of silicon-containing films Download PDFInfo
- Publication number
- TW200837213A TW200837213A TW097106379A TW97106379A TW200837213A TW 200837213 A TW200837213 A TW 200837213A TW 097106379 A TW097106379 A TW 097106379A TW 97106379 A TW97106379 A TW 97106379A TW 200837213 A TW200837213 A TW 200837213A
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- Prior art keywords
- group
- source
- containing source
- oxygen
- nitrogen
- Prior art date
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- 125000004122 cyclic group Chemical group 0.000 title claims abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- 239000010703 silicon Substances 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 229910003828 SiH3 Inorganic materials 0.000 claims abstract description 7
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000231 atomic layer deposition Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 14
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- -1 lanthanum carboxylate Chemical class 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000012634 fragment Substances 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- RDNMOYZEMHOLIF-UHFFFAOYSA-N n,n-di(propan-2-yl)decan-1-amine Chemical compound CCCCCCCCCCN(C(C)C)C(C)C RDNMOYZEMHOLIF-UHFFFAOYSA-N 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- SNHZNFDWSYMNDN-UHFFFAOYSA-N 2-methyl-n-(2-methylbutan-2-yl)butan-2-amine Chemical compound CCC(C)(C)NC(C)(C)CC SNHZNFDWSYMNDN-UHFFFAOYSA-N 0.000 claims 1
- 101100059320 Mus musculus Ccdc85b gene Proteins 0.000 claims 1
- 238000009825 accumulation Methods 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- DVSDDICSXBCMQJ-UHFFFAOYSA-N diethyl 2-acetylbutanedioate Chemical compound CCOC(=O)CC(C(C)=O)C(=O)OCC DVSDDICSXBCMQJ-UHFFFAOYSA-N 0.000 claims 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- UFFQZCPLBHYOFV-UHFFFAOYSA-N n,n-diethyldecan-1-amine Chemical compound CCCCCCCCCCN(CC)CC UFFQZCPLBHYOFV-UHFFFAOYSA-N 0.000 claims 1
- 230000002000 scavenging effect Effects 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 19
- 229910021529 ammonia Inorganic materials 0.000 abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- OSIVBHBGRFWHOS-UHFFFAOYSA-N dicarboxycarbamic acid Chemical compound OC(=O)N(C(O)=O)C(O)=O OSIVBHBGRFWHOS-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 13
- 239000002243 precursor Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- RUQSMSKTBIPRRA-UHFFFAOYSA-N yttrium Chemical compound [Y].[Y] RUQSMSKTBIPRRA-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 2
- AFSGYZZYLXVSKS-UHFFFAOYSA-N [ethyl(hydrazinyl)amino]ethane Chemical compound CCN(CC)NN AFSGYZZYLXVSKS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 108010068370 Glutens Proteins 0.000 description 1
- 229910003946 H3Si Inorganic materials 0.000 description 1
- 241000467233 Ilanga discus Species 0.000 description 1
- 241000237536 Mytilus edulis Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- OLYKTICNIVCGSY-UHFFFAOYSA-N [O-2].[Ce+3].[C+4] Chemical compound [O-2].[Ce+3].[C+4] OLYKTICNIVCGSY-UHFFFAOYSA-N 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000004262 dental pulp cavity Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 235000021312 gluten Nutrition 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- LVNSSMZMGKHMPP-UHFFFAOYSA-N n-pentyldecan-1-amine Chemical compound CCCCCCCCCCNCCCCC LVNSSMZMGKHMPP-UHFFFAOYSA-N 0.000 description 1
- OQFQKNFHVKYTDG-UHFFFAOYSA-N n-propan-2-yldecan-1-amine Chemical compound CCCCCCCCCCNC(C)C OQFQKNFHVKYTDG-UHFFFAOYSA-N 0.000 description 1
- CATWEXRJGNBIJD-UHFFFAOYSA-N n-tert-butyl-2-methylpropan-2-amine Chemical compound CC(C)(C)NC(C)(C)C CATWEXRJGNBIJD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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Description
200837213 九、發明說明: 相關申請的相互引用 曰提交的美國臨時專利申 本申請要求於2007年2月27 請No. 60/903,734的優先權。 發明所屬之技術領域 本發明公開了電漿增強循環性化學氣相沈積氮化_、 石炭氮切、氧氮㈣、m基氮切和摻碳的氧切的方法。 先兩技術 電子裝置製造業已經把氮切、碳氮切和氧氮化石夕的 化學氣相沈積(CVD )、循環性化學氣相沈積(ccVD )或 原子層沈積(ALD )用於製造積體電路中。該工業應用的 實例包括:US 2003/00201 1 1; US 2005/0048204 Al ; US 4720395; US 7,166,516; Gumpher,J·,W· Bather,N. Mehta 和 D. Wedel· “Characterization of Low-Temperature Silicon
Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia·” Journal of The Electrochemical Society 151 (5): (2004) G353-G359; US 2006/045986; US 2005/1 52501; US 2005/255714; US 7,129,187; US 2005/159017; US 6?391?803; US 5,976,991; US 2003/0059535; US 5,234,869; JP2006-301338; US 2006/087893; US 2003/26083; US 2004/017383; US 2006/0019032; US 2003/36097; US 2004/044958; US 6,881,636; US 6,963,101; 200837213 US2001/0000476;和 US2005/129862。如下所述,本發明 提供在基材上將含>5夕膜如氮化碎、碳氮化石夕、氧氮化石夕^ 摻碳的氧化矽的CVD或ALD的現有工業方法的改進。 發明内容 本發明是將含石夕膜如氮化石夕、碳氮化石夕、氧氮化;g夕和捧 碳的氧化矽沈積到基材上的方法。 本發明的實施方式之一是將氮化矽、碳氮化矽、氧氮化 石夕和魏基氮化矽沈積到半導體基材上的方法,包括·· a·在遠距電漿(remote plasma)條件下使含氮源與加熱的 基材相接觸以在所述力α熱的基材上吸收至少一部分含氮 源, b ·清除任何未吸收的含氮源, c·使所述加熱的基材與具有一個或多個si — H3片段的含 矽源接觸以與所吸收的含氧源反應,其中所述含矽源含有 U自以下組中的一個或多個H3Si-NR02 (R0 = SiH3, R,R1咬 R2,定義如下)基團,該組包括一種或多種的: r\n/r1 3 sil·
si 3 H
B R—N
R
C Ή3 ri3
R H3 ^—si 其中,式中的R和R1代表具有2_10個碳原子的脂族基團, 其中式A中的&和Rl也可以是環狀基團,且r2選自單鍵、 (CH2)n、環或 SiH 和 200837213 d ·清除未反應的含石夕源。 本發明的另一實施方式是將氧氮化矽、羧基氮化矽和摻 碳的氧化吩沈積到半導體基材上的方法,包括·· a·在遂距電漿條件下使含氧源與加熱的基材相接觸以 在所述加熱的基材上吸收至少一部分含氧源, b·清除任何未吸收的含氧源, C.使所述加熱的基材與具有一個或多個以_出片段的含 矽源接觸以與所吸收的含氧源反應中所述含矽源含有 ,自以下組中的一個或多個H3Si_NR〇2(R〇 = siH3,R R丨或R2, 定義如下)基團,該組包括一種或多種··
A B C
R I
R N—S1H3 R1 H3Si/'SiH3 4iH3 iiH3 ::,式中的R和^代表具有2_10個碳原子的脂族基團, 式A中的R和R1也可以是環狀基團,且r2選自單鍵、 (LH2)n、環或 SiH2,和 d•清除未反應的含矽源。 實施方式 本發明公開了由含有Si-H3的烧胺基⑦烧,優 (Wn) siH3(其中r2獨立地選自 、工 ,(優選氨)進行電聚增強循環性化學積。 :氮切、減^、„氮切和摻碳的氧化=化=、 电得膜與由熱化學氣相沈積獲得的膜相比具有改進的特’ 7 200837213 性,例如蝕刻速率、氫濃度和應力。或者,該方法可按照 原子層沈積(ALD)、電漿辅助原子層沈積(pAALD)、化 學氣相沈積(CVD)、低壓化學氣相沈積(LpcVD)、電漿 增強化學氣相沈積(PECVD)或旋轉塗布沈積(响⑽ deposition) ( SOD)來進行。 電漿增強循環性化學氣相沈積氮切、碳氮切、氧氮 化矽和羧基氮化矽的典型循環示於圖丨中。 遠距電漿室是Advanced Energy Industries公司製造的 utmas RPS。Litmas RPS是結合有固態rf功率輸出系統的 圓柱形感應電敷源(石英室)。水冷線圈捲繞在室的周圍, 爲至提供冷部並形成RF天線。頻率操作範圍在 1·贿ζ·3·2ΜΗζ。DC輸出功率範圍爲1〇〇 w i5〇〇 w。 ALD系統是Cambridge Nan(>Teeh公司製造的 ⑽。ald反應器是陽極化紹且容納有1〇〇匪的石夕基材。
A L D反應為具有包埋的般:彡4 A 韦匕 现形加熱部件,其從底部加埶的基 材。也有包埋在反應器壁内的昝 、, … 土 ^ + 門的s式加熱态。丽驅物閥總管 匕、十在加熱杰巾’加熱封套用於加熱前驅物容器 物閥總管中的ALD閥是:r诵pq n ]疋—通閥,可向ALD反應器中續 地供給1 〇- 1 〇〇sccm的惰性氣體。 、 氮化矽、碳氮化矽、氧氮化矽和羧基 描述如下。 7此積方法 在方法的第一步驟中,忠壯 1 2英寸處 並以預定 通過開啓 τ女裝在沈積室上游 的遠距電漿室内産生氨電漿 · κ ν anim〇nia plasma 體積流速、預定的時間供應到沈積室中。通' 8 200837213 逖距弘桌頭和ALD反應器之間的門閥(以沈),經 0.1-80秒的一段時間將氨電漿供給到ald室中以使氨自由 土被充刀的吸附,使得基材表面飽和。沈積過程中,供給 到返距電漿室入口的氨的流速通常在1-100 seem範圍内。 電漿室中的PF功率在1〇〇w_ 15〇〇w之間變化。沈積溫度 疋傳、、、充的’範圍約2〇〇 _ 6〇〇。〇,對原子層沈積來說優選2⑽ 4〇〇 C,對循環性化學氣相沈積來說優選4〇〇 _ 6⑻。c。示 { Π生的[力從5〇 mt〇rr _ 1〇〇 t〇rr。此外,氨中其他的含氮 源此夠疋氮、肼、單烷基肼、二烷基肼和其混合物。 在方法的第二步驟中,惰性氣體如Ar、%或He可用於 桅至中ϋ人掃未反應的氨自由基。通常在循環沈積方法中, 氣月立士 Ar Ν2或He以1 〇 _ 1 〇〇 sccm的流速供入到室中, k而清除留在室中的氨自由基和任何的副産品。 在方法的第三步驟中,有機胺基矽烷諸如二乙基胺基矽 k ( DEAS )、二異丙基胺基矽烷(mpAS )、二第三丁基胺 基矽烷(DTB AS )、二第二丁基胺基烷基、二第三戊基胺基 矽烷和其混合物以預定摩爾體積(例如⑽微摩爾)、以 預定一段時間(優選約0 005-10秒)導入到室中。矽前驅 物與吸附在基材表面上的氨自由基反應導致氮化矽的形 成。使用了傳統的沈積溫度200 - 5〇(rc和壓力5〇 mt〇rr _ 1 00 torr 〇 在方法的第四步驟中,用惰性氣體如Ar、n2或He從室 中吹掃未反應的有機胺基矽烷。通常在循環沈積方法中, 氣體如Ar、N2或He以1 〇-1 〇〇 seem的流速供入到室中, 200837213 攸而清除留在室中的有機胺基矽烷和任何的副産品。 上述的四個方法步驟包括典型的ALD過程循環。二 ALD過程循環重複若干次直到獲得所需的膜厚度。人 圖2顯不了基材溫度爲400它時的典型ALD飽和 電漿增強循環性化學氣相沈積氧氮化石夕 ^ 石夕的典型循環示於圖3中。 人的年'化 在方法的第一步驟中,安裝在沈積室上游約12英 々、距包水至内產生氧電漿(〇xygen plasma ),並以預定 積流速、預定的時間供應到沈積室t。通f,通過開^ 距電漿頭和ALD反應器之間的門閥,經。.⑷秒 間將㈣漿供給到AL D室中以使含氧自由基被充分地V" 附,使得基材表面飽和。沈積過程中,供給到遠距電裝室 入口的氧流速通常在1-100 sccm範圍内。電漿室中的RF 功率在U)〇W_ 1500W之間變化。沈積溫度是傳統的,: 約200-6GGt,制子層沈積來說優選2⑽·伽。c,對循環 性化學氣相沈積來說優選400_6〇〇。〇。示例性的壓力從= _rr - 1〇〇 torr。除氧以外,其他含氧源可以是臭氧、一 氧化二氮和它們的混合物。 在方法的第二步驟中,惰性氣體如Ar、N”t He可用於 從室中吹掃未反應的含氧自由基。通常在循環沈積方法 中’氣體如Ar、N2或He以10_1〇〇sccm的流速供入到室 中,從而清除留在室中的含氧自由基和任何的副產品。 在方法的第三步驟中,有機胺基矽烷諸如二乙基胺基矽 坆(DEAS )、二異丙基胺基矽烷(mpAS )、二第三丁基胺 10 200837213 基石夕烧(DTBAS)、二第二丁基胺基烷基、二第三戊基胺基 矽烷和其混合物以預定摩爾體積(例如K1〇〇微摩爾)、以 一段預定時間(優選約0.005-10秒)導入到室中。 τ 刖驅 物與吸附在基材表面上的含氧自由基反應導致氧化矽的形 成。使用了傳統的沈積溫度200-50(Tc和壓力5〇mt〇rr — 1〇〇 在方法的第四步驟中,用惰性氣體如Ar、乂或He從室 中%掃未反應的有機胺基矽烷。通常在循環沈積方法中, 氣體如Ar、N2或He以1(M〇〇sccm的流速供入到室中, 從而清除留在室中的有機胺基矽烷和任 上述四個μ步驟包括ALD過程循環。該jA=過程循 %重稷若干次直到獲得所需的膜厚度。
人沈和期間僅使用極少量
由於在一次沈積期間{ 水浴瓶的所述矽前驅物的 度下被認爲是恒定的。因 的化合物,所以來自 L (每單位時間量)在給定溫 加入ALD反應器中的所述矽 ’前驅物的脈衝時間成線性 200837213 例。 從表1中可以看出,艮 保持相同時, p使在沈積溫度和氫前驅物的數量 述矽前驅物的量:::矽馭的速率隨著加入到反應器中所 里的麩化而變化。 同樣從表1中σ 、 隨著所述⑽斯/以看出’ #其他處理條件保持相同時, 秒,形成iu卜&, 一里0·01秒增加到0.05 隨後即使加入舌々 · 6Α/循裱增加。然而, 入更夕矽前驅物後,速率幾半 明使用以前…… 《羊成手保持不變。這表 J驅物形成的膜確實是ALD膜。 溫度(°c )
石夕前驅物脈衝 時間(秒) 沈積速率 (埃/循環)
實施例2 使用FTIP對所沈積的ALD膜進行分析。膜的FTip光 譜示於圖4中。從圖4中可以看出,1046cm-1處存在有吸 收峰,表明膜中存在氧化物。3371處的峰是N_H伸展 (stretch)(有一些〇-H)且在接近1130cm·1的肩部具有相 12 200837213 應的搖擺(rock)。2218峰來自si_H且其寬的形狀表明是 低應力的膜。813的峰接近Si_N。沈積膜的ΕΕ>χ分析也證 實了膜中Si和N的存在。 上述列出的包括試驗實施例的本發明的實施方式是對 本發明所作的許多實施方式的示例。彳以構想的是,可使 用許多其他配置的方法並且方法中所用材料可選自除具體 公開的那些以外的許多材料。簡言之,本發明已經針對特 別的實施方式進行了闡㉝,但本發明的整個保護範圍應該 由所附的權利要求加以確定。 μ以 圖式簡單說明 〃圖1是典型的用於氮化矽、碳氮化物、氧氮化矽和羧基 氮化矽的電漿增強循環性化學氣相沈積的流程圖。 土 圖2是在下述PEALD試驗條件下dipas的沈積速率與 脈衝時間圖:電漿功率爲^处…的5sccm /、 X13 UJ seem 的吹掃氣體Nr基材溫度4〇(rc、不銹鋼容器中的 爲 40°C。 圖3是典型的用於氧氮化矽和摻碳的氧化矽的電漿辦 強循環性化學氣相沈積的流程圖。 圖4是實施例i所述的膜的FTIp光 進行討論。 牡貝嬈例2中 13
Claims (1)
- 200837213 十、申請專利範圍: 1、一種將氮化矽、碳氮 匕卜t ^ ^ ^ x 51化矽、軋氮化矽和羧基氮化矽 沈積到半導體基材上的方法,包括: :⑨水*、件下使含氮源與加熱的基材相接觸以 在所述加熱的基材上吸收至少-部分含氮源, b.清除任何未被吸收的含氮源, 含二:述加熱的基材與具有一個或多個叫片段的 :接觸以與所吸收的含氮源反應 有選自以下組φ从 ^ ^ 丨4 ☆’你具 或Rm中的一個或多個H泰顺〇2 (R〇 = siH3, R, R1 — 義如下)基團,該組包括—種或多種的: A B R C X RrVR H3s〆、SiH3 I, I “中式中的R和R1代表具有 其中式A巾M R 4 ! ” - 個碳原子的脂族基團, 八A甲的R和R1也可以Η _2)η、環或叫,和 4狀基團’且V選自單鍵、 d.清除未反應的含矽源。 如申凊專利範圍第1項所、f 迷方法直到形成所需厚度的膜广方法’其中,重複所 積法。 、如申請專利範圍#1項所述的方法,其為原子層沈 14 200837213 4、 如申請專利範圍帛i項所述的方法,其為電㈣強 循環性化學氣相沈積法。 5、 如申請專利範圍第丨項所述的方法,其中,所述的 基材溫度範圍爲200-600X:。 6、如申請專利範圍第丨項所述的方法,其中,所述具 有-個或多個Si-H3片段的含矽源選自二乙基胺基矽烷 (DEAS )、二異丙基胺基矽烷(mPAs )、一 、二第二丁基織基、二;: = 烷和它們的混合物。 7、如申請專利範圍第1項所述的方法,其中,所述含 氮源選自氮、4、肼、單烷基肼、二烷基肼和它們的混合 物。 種將氧氮化矽、羧基氮化矽和摻碳的氧化矽沈積 到半導體基材上的方法,包括: a•在遂距電漿條件下使含氧源與加熱的基材相接觸以 在所述加熱的基材上吸收至少一部分含氧源, b•清除任何未被吸收的含氧源, 使所述加熱的基材與具有一個或多個Si-H3片段的 含:源接觸以與所吸收的含氧源反應,其中所述含石夕源含 有廷自以下組中的—個或多個H3Si-NR02 (R0 = SiH3, R,Rl 15 200837213 或R2,定義如 广J I團,該組包括一種或多種: A R B R1 SiH3 R I I I SiH3 SiH, C H3a,、siH3二中式式代表具有2_1, 的尺和尺也可以是環狀基團,且R2選自單 (CH2)n、壌或 Sipj2,和 鍵 d·清除未反應的含矽 源 述二…,所 1〇、如中請專利範圍第8項所述的方法,其為原子 沈積法。 12、如中請專利範圍第8項所述的方法,其中, 的基材溫度範圍爲200-600°C。 所述 1 3、如申請專利範圍第8 與所述的方法,其中, “有一個或多個Si_H3片段的含矽源選自 (dEas )、二異丙基胺基矽烷(Dipa 二第 所述 基矽烷 基胺基 16 200837213 矽烷(DTB AS )、二第二丁基胺基烷基、二第三戊基胺基矽 院和它們的混合物。 14、如申請專利範圍第8項所述的方法,其中,所述 含氧源選自氧、一氧化二氮、臭氧和它們的混合物。 17
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2008
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- 2008-02-26 JP JP2008043910A patent/JP4960276B2/ja active Active
- 2008-02-26 EP EP08151950.6A patent/EP1967609B1/en active Active
- 2008-02-27 KR KR1020080017797A patent/KR100988096B1/ko active IP Right Grant
- 2008-02-27 CN CNA2008100881795A patent/CN101255548A/zh active Pending
- 2008-02-27 CN CN201510250443.0A patent/CN105369215A/zh active Pending
-
2012
- 2012-02-27 US US13/405,453 patent/US8828505B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI500809B (zh) * | 2009-11-02 | 2015-09-21 | Toray Industries | 電漿cvd裝置及矽薄膜之製造方法 |
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US20120171874A1 (en) | 2012-07-05 |
TWI506157B (zh) | 2015-11-01 |
CN105369215A (zh) | 2016-03-02 |
JP2008258591A (ja) | 2008-10-23 |
EP1967609A3 (en) | 2009-07-22 |
KR100988096B1 (ko) | 2010-10-18 |
US8828505B2 (en) | 2014-09-09 |
EP1967609A2 (en) | 2008-09-10 |
CN101255548A (zh) | 2008-09-03 |
EP1967609B1 (en) | 2015-07-15 |
KR20080079625A (ko) | 2008-09-01 |
JP4960276B2 (ja) | 2012-06-27 |
US20080207007A1 (en) | 2008-08-28 |
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