KR100988096B1 - 실리콘 함유 필름의 플라즈마 시클릭 화학 증기 증착법 - Google Patents
실리콘 함유 필름의 플라즈마 시클릭 화학 증기 증착법 Download PDFInfo
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- KR100988096B1 KR100988096B1 KR1020080017797A KR20080017797A KR100988096B1 KR 100988096 B1 KR100988096 B1 KR 100988096B1 KR 1020080017797 A KR1020080017797 A KR 1020080017797A KR 20080017797 A KR20080017797 A KR 20080017797A KR 100988096 B1 KR100988096 B1 KR 100988096B1
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- Prior art keywords
- silicon
- containing source
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- tert
- chemical vapor
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 125000004122 cyclic group Chemical group 0.000 title claims abstract description 21
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- OSIVBHBGRFWHOS-UHFFFAOYSA-N dicarboxycarbamic acid Chemical compound OC(=O)N(C(O)=O)C(O)=O OSIVBHBGRFWHOS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 43
- 238000000231 atomic layer deposition Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 23
- 238000010926 purge Methods 0.000 claims description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- YVQRICZYVAAUML-UHFFFAOYSA-N N-tert-butyl-2-methyl-N-silylpropan-2-amine Chemical compound CC(C)(C)N([SiH3])C(C)(C)C YVQRICZYVAAUML-UHFFFAOYSA-N 0.000 claims description 6
- 239000012634 fragment Substances 0.000 claims description 6
- TZMCQNLNLLXBJS-UHFFFAOYSA-N 2-methyl-N-(2-methylbutan-2-yl)-N-silylbutan-2-amine Chemical compound CCC(C)(C)N([SiH3])C(C)(C)CC TZMCQNLNLLXBJS-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- -1 monoalkylhydrazines Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 18
- 239000012686 silicon precursor Substances 0.000 description 11
- 238000005137 deposition process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- LZESIEOFIUDUIN-UHFFFAOYSA-N 2-[amino(tert-butyl)silyl]-2-methylpropane Chemical compound CC(C)(C)[SiH](N)C(C)(C)C LZESIEOFIUDUIN-UHFFFAOYSA-N 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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Abstract
Description
온도 (℃) | NH3 진동 (초) | 실리콘 전구체 진동 시간 (초) | 증착율 (Å/사이클) |
400 | 3 | 0.01 | 0.156 |
400 | 3 | 0.025 | 0.272 |
400 | 3 | 0.05 | 0.318 |
400 | 3 | 0.1 | 0.307 |
400 | 3 | 0.2 | 0.3 |
Claims (14)
- 반도체 기판 상에 실리콘 니트라이드, 실리콘 카르보니트라이드, 실리콘 옥시니트라이드 및 실리콘 카르복시니트라이드를 증착시키는 방법으로서,a. 원거리 플라즈마 조건하에 가열된 기판을 질소 함유 공급원과 접촉시켜 질소 함유 공급원의 일부 또는 전체를 가열된 기판 상에 흡수시키는 단계,b. 비흡수된 질소 함유 공급원을 퍼어징(purging)시키는 단계,c. 가열된 기판을 하나 또는 그 초과의 Si-H3 단편을 지닌 실리콘 함유 공급원과 접촉시켜, 흡수된 질소 함유 공급원과 반응시키는 단계로서, 실리콘 함유 공급원이의 하나 또는 그 초과로 이루어진 군으로부터 선택된 하나 또는 그 초과의 H3Si-NR0 2(여기에서, R0는 SiH3, 하기 정의된 R, R1 또는 R2이다) 기를 갖는 단계[상기 식에서, R 및 R1은 2 내지 약 10개의 탄소 원자를 지닌 지방족기를 나타내고, 상기 화학식 (A)에서 R 및 R1은 또한, 시클릭기일 수 있으며, R2는 단일 결합, (CH2)n (여기에서, n은 1 내지 6의 정수이다), 고리 또는 SiH2로 구성된 군으로부터 선택된다], 및d. 미반응 실리콘 함유 공급원을 퍼어징시키는 단계를 포함하는 방법.
- 제 1항에 있어서, 목적하는 두께의 필름이 성립될 때 까지 반복되는 방법.
- 제 1항에 있어서, 원자층 증착법인 방법.
- 제 1항에 있어서, 플라즈마 시클릭 화학 증기 증착법인 방법.
- 제 1항에 있어서, 기판 온도가 200 내지 600℃인 방법.
- 제 1항에 있어서, 하나 이상의 Si-H3 단편을 지닌 실리콘 함유 공급원이 디에틸아미노실란 (DEAS), 디-이소-프로필아미노실란 (DIPAS), 디-3차-부틸아미노실란 (DTBAS), 디-2차-부틸아미노실란, 디-3차-펜틸아미노 실란 및 이의 혼합물로 구성된 군으로부터 선택되는 방법.
- 제 1항에 있어서, 질소 함유 공급원이 질소, 암모니아, 히드라진, 모노알킬히드라진, 및 이의 혼합물로 구성된 군으로부터 선택된 방법.
- 반도체 기판 상에 실리콘 옥시니트라이드, 실리콘 카르복시니트라이드, 및 탄소 도핑된 시리콘 옥사이드를 증착시키는 방법으로서,a. 원거리 플라즈마 조건하에 가열된 기판을 산소 함유 공급원과 접촉시켜 산소 함유 공급원의 일부 또는 전체를 가열된 기판 상에 흡수시키는 단계,b. 비흡수된 질소 함유 공급원을 퍼어징시키는 단계,c. 가열된 기판을 하나 또는 그 초과의 Si-H3 단편을 지닌 실리콘 함유 공급원과 접촉시켜, 흡수된 산소 함유 공급원과 반응시키는 단계로서, 실리콘 함유 공급원이의 하나 또는 그 초과로 이루어진 군으로부터 선택된 하나 또는 그 초과의 H3Si-NR0 2(여기에서, R0는 SiH3, 하기 정의된 R, R1 또는 R2이다) 기를 갖는 단계[상기 식에서, R 및 R1은 2 내지 약 10개의 탄소 원자를 지닌 지방족기를 나타내고, 상기 화학식 (A)에서 R 및 R1은 또한, 시클릭기일 수 있으며, R2는 단일 결합, (CH2)n (여기에서, n은 1 내지 6의 정수이다), 고리 또는 SiH2로 구성된 군으로부터 선택된다], 및d. 미반응 실리콘 함유 공급원을 퍼어징시키는 단계를 포함하는 방법.
- 제 8항에 있어서, 목적하는 두께의 필름이 성립될 때 까지 반복되는 방법.
- 제 8항에 있어서, 원자층 증착법인 방법.
- 제 8항에 있어서, 플라즈마 시클릭 화학 증기 증착법인 방법.
- 제 8항에 있어서, 기판 온도가 200 내지 600℃인 방법.
- 제 8항에 있어서, 하나 이상의 Si-H3 단편을 지닌 실리콘 함유 공급원이 디에틸아미노실란 (DEAS), 디-이소-프로필아미노실란 (DIPAS), 디-3차-부틸아미노실란 (DTBAS), 디-2차-부틸아미노실란, 디-3차-펜틸아미노 실란 및 이의 혼합물로 구성된 군으로부터 선택되는 방법.
- 제 8항에 있어서, 산소 함유 공급원이 산소, 산화질소, 오존, 및 이의 혼합물로 구성된 군으로부터 선택된 방법.
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US12/030,186 US20080207007A1 (en) | 2007-02-27 | 2008-02-12 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
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KR20190114874A (ko) | 2018-03-30 | 2019-10-10 | 에스케이트리켐 주식회사 | 실리콘 박막 형성용 전구체 및 이를 이용한 실리콘 함유 박막 형성 방법 및 상기 실리콘 함유 박막을 포함하는 반도체 소자. |
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USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
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Also Published As
Publication number | Publication date |
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US20120171874A1 (en) | 2012-07-05 |
TWI506157B (zh) | 2015-11-01 |
CN105369215A (zh) | 2016-03-02 |
JP2008258591A (ja) | 2008-10-23 |
EP1967609A3 (en) | 2009-07-22 |
US8828505B2 (en) | 2014-09-09 |
TW200837213A (en) | 2008-09-16 |
EP1967609A2 (en) | 2008-09-10 |
CN101255548A (zh) | 2008-09-03 |
EP1967609B1 (en) | 2015-07-15 |
KR20080079625A (ko) | 2008-09-01 |
JP4960276B2 (ja) | 2012-06-27 |
US20080207007A1 (en) | 2008-08-28 |
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