SG118068A1 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
SG118068A1
SG118068A1 SG200101320A SG200101320A SG118068A1 SG 118068 A1 SG118068 A1 SG 118068A1 SG 200101320 A SG200101320 A SG 200101320A SG 200101320 A SG200101320 A SG 200101320A SG 118068 A1 SG118068 A1 SG 118068A1
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
SG200101320A
Other languages
English (en)
Inventor
Yamazaki Shunpei
Koyama Jun
Suzawa Hideomi
Ono Koji
Arao Tatsuya
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG118068A1 publication Critical patent/SG118068A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13454Drivers integrated on the active matrix substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
SG200101320A 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof SG118068A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000060206 2000-03-06

Publications (1)

Publication Number Publication Date
SG118068A1 true SG118068A1 (en) 2006-01-27

Family

ID=18580553

Family Applications (3)

Application Number Title Priority Date Filing Date
SG200101320A SG118068A1 (en) 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof
SG200601674-5A SG161098A1 (en) 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof
SG2010058840A SG178631A1 (en) 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG200601674-5A SG161098A1 (en) 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof
SG2010058840A SG178631A1 (en) 2000-03-06 2001-03-05 Semiconductor device and manufacturing method thereof

Country Status (7)

Country Link
US (5) US6759678B2 (de)
EP (2) EP1132960A3 (de)
KR (1) KR100767612B1 (de)
CN (3) CN100485950C (de)
MY (1) MY124513A (de)
SG (3) SG118068A1 (de)
TW (1) TW495854B (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548686B (en) * 1996-07-11 2003-08-21 Semiconductor Energy Lab CMOS semiconductor device and apparatus using the same
US8603870B2 (en) * 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
TW495808B (en) * 2000-02-04 2002-07-21 Semiconductor Energy Lab Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
TW495854B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW513753B (en) * 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6706544B2 (en) 2000-04-19 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and fabricating method thereof
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TWI224806B (en) * 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW522577B (en) * 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4869509B2 (ja) * 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003045874A (ja) * 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
KR100856864B1 (ko) * 2001-09-24 2008-09-04 엘지디스플레이 주식회사 액정표시장치용 박막트랜지스터의 제조방법 및 그 제조방법에 따른 박막트랜지스터
JP4256087B2 (ja) * 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6903377B2 (en) * 2001-11-09 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US7042024B2 (en) * 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
SG143063A1 (en) 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US20030214042A1 (en) * 2002-02-01 2003-11-20 Seiko Epson Corporation Circuit substrate, electro-optical device and electronic appliances
JP4017886B2 (ja) * 2002-02-28 2007-12-05 シャープ株式会社 薄膜トランジスタ装置及びその製造方法
EP1343206B1 (de) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung, elektronische Vorrichtung, Beleuchtungsvorrichtung und Herstellungsverfahren der lichtemittierenden Vorrichtung
US7344825B2 (en) 2002-04-04 2008-03-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device, and developing apparatus using the method
TWI269248B (en) 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
JP4271413B2 (ja) * 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4408012B2 (ja) * 2002-07-01 2010-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP2004095482A (ja) * 2002-09-03 2004-03-25 Chi Mei Electronics Corp 画像表示装置
US20040124421A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4454921B2 (ja) * 2002-09-27 2010-04-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683817B2 (ja) * 2002-09-27 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7875419B2 (en) * 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
AU2003275615A1 (en) * 2002-11-01 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP4181853B2 (ja) * 2002-11-15 2008-11-19 Nec液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
US7485579B2 (en) 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7256079B2 (en) * 2002-12-16 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recoding the program
JP2004200378A (ja) 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7157774B2 (en) * 2003-01-31 2007-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Strained silicon-on-insulator transistors with mesa isolation
JP4663963B2 (ja) 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7250720B2 (en) * 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
KR100543001B1 (ko) * 2003-09-03 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터 및 액티브 매트릭스 평판 표시 장치
US7374983B2 (en) * 2004-04-08 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI467541B (zh) * 2004-09-16 2015-01-01 Semiconductor Energy Lab 顯示裝置和其驅動方法
WO2006030522A1 (ja) * 2004-09-17 2006-03-23 Sharp Kabushiki Kaisha 薄膜半導体装置及びその製造方法
JP4329740B2 (ja) * 2004-10-22 2009-09-09 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置
TWI382455B (zh) * 2004-11-04 2013-01-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US7563658B2 (en) * 2004-12-27 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7638372B2 (en) * 2005-06-22 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR100712295B1 (ko) * 2005-06-22 2007-04-27 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
EP1758072A3 (de) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung und ihr Steuerungsverfahren
JP5006598B2 (ja) * 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
JPWO2007034647A1 (ja) * 2005-09-20 2009-03-19 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子の製造方法、有機エレクトロルミネッセンス表示装置
EP1793366A3 (de) * 2005-12-02 2009-11-04 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement, Anzeigevorrichtung und elektronisches Gerät
JP5352081B2 (ja) 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5415001B2 (ja) * 2007-02-22 2014-02-12 株式会社半導体エネルギー研究所 半導体装置
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
JP5408856B2 (ja) * 2007-08-30 2014-02-05 キヤノン株式会社 有機el表示装置
KR100920043B1 (ko) * 2007-10-11 2009-10-07 주식회사 하이닉스반도체 반도체 소자의 리세스 게이트 및 그의 형성방법
CN102197490B (zh) 2008-10-24 2013-11-06 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
JP5502864B2 (ja) 2009-07-01 2014-05-28 シャープ株式会社 アクティブマトリクス基板及び有機el表示装置
TWI495084B (zh) 2009-07-07 2015-08-01 Epistar Corp 發光元件
JP2012014868A (ja) * 2010-06-29 2012-01-19 Sony Corp 表示装置
KR101947019B1 (ko) * 2012-10-26 2019-02-13 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN103151388B (zh) * 2013-03-05 2015-11-11 京东方科技集团股份有限公司 一种多晶硅薄膜晶体管及其制备方法、阵列基板
KR102043180B1 (ko) * 2013-04-25 2019-11-12 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102100880B1 (ko) * 2013-06-26 2020-04-14 엘지디스플레이 주식회사 유기발광 다이오드 표시장치
KR20150019989A (ko) * 2013-08-12 2015-02-25 엘지디스플레이 주식회사 유기 발광 디스플레이 장치용 어레이 기판 및 이의 제조 방법
KR102091664B1 (ko) 2013-09-27 2020-03-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조방법
CN104681566B (zh) * 2013-11-27 2017-02-08 乐金显示有限公司 用于显示装置的阵列基板及其制造方法
KR102238994B1 (ko) * 2014-07-17 2021-04-12 엘지디스플레이 주식회사 표시장치
CN104143533B (zh) * 2014-08-07 2017-06-27 深圳市华星光电技术有限公司 高解析度amoled背板制造方法
JP2016062874A (ja) * 2014-09-22 2016-04-25 株式会社ジャパンディスプレイ 画像表示装置及びその製造方法、並びに画像表示装置の検査方法
TWI565081B (zh) * 2014-12-31 2017-01-01 鴻海精密工業股份有限公司 薄膜電晶體及薄膜電晶體基板
CN105810745B (zh) * 2014-12-31 2019-06-18 鸿富锦精密工业(深圳)有限公司 薄膜晶体管及薄膜晶体管基板
CN104659109B (zh) * 2015-03-20 2017-07-14 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板
US11189736B2 (en) * 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017041596A (ja) * 2015-08-21 2017-02-23 株式会社Joled 薄膜トランジスタ、半導体装置および電子機器
KR102406726B1 (ko) * 2016-04-25 2022-06-07 삼성전자주식회사 반도체 소자의 제조 방법
KR20180046418A (ko) * 2016-10-27 2018-05-09 엘지디스플레이 주식회사 표시장치 및 그 제조방법
CN111149434B (zh) * 2017-09-28 2022-07-05 夏普株式会社 显示装置及其制造方法
CN108807422B (zh) * 2018-06-12 2020-08-04 武汉华星光电技术有限公司 阵列基板制作方法及阵列基板、显示面板
CN109585682B (zh) * 2018-12-06 2020-09-29 合肥鑫晟光电科技有限公司 一种发光器件的封装方法、封装结构及显示装置
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough
EP1001467A2 (de) * 1998-11-09 2000-05-17 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und deren Herstellungsverfahren
EP1003223A2 (de) * 1998-11-17 2000-05-24 Sel Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung von einem TFT

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272100A (en) 1988-09-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode and manufacturing method therefor
JP2513023B2 (ja) * 1988-10-24 1996-07-03 三菱電機株式会社 電界効果型半導体装置およびその製造方法
JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JPH05243262A (ja) 1992-02-28 1993-09-21 Citizen Watch Co Ltd 半導体装置の製造方法
JP2821830B2 (ja) * 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
JPH06148685A (ja) 1992-11-13 1994-05-27 Toshiba Corp 液晶表示装置
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
KR100294026B1 (ko) 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (de) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP3398453B2 (ja) 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5491099A (en) 1994-08-29 1996-02-13 United Microelectronics Corporation Method of making silicided LDD with recess in semiconductor substrate
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08116065A (ja) * 1994-10-12 1996-05-07 Sony Corp 薄膜半導体装置
US5684365A (en) * 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
JPH08274336A (ja) 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
US5612234A (en) 1995-10-04 1997-03-18 Lg Electronics Inc. Method for manufacturing a thin film transistor
KR100206876B1 (ko) 1995-12-28 1999-07-01 구본준 모스전계효과트랜지스터 제조방법
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
JP3708637B2 (ja) 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW479151B (en) * 1996-10-16 2002-03-11 Seiko Epson Corp Substrate for liquid crystal device, the liquid crystal device and projection-type display
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
JPH10172762A (ja) * 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
US6088070A (en) 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
JPH10233511A (ja) 1997-02-21 1998-09-02 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法並びに液晶表示装置
TW418338B (en) * 1997-03-03 2001-01-11 Toshiba Corp Display apparatus with monolithic integrated driving circuit
US6529250B1 (en) * 1997-05-22 2003-03-04 Seiko Epson Corporation Projector
GB2326019A (en) * 1997-06-03 1998-12-09 Philips Electronics Nv Thin film transistor
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
US6369410B1 (en) 1997-12-15 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JPH11261075A (ja) 1998-03-13 1999-09-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6433841B1 (en) * 1997-12-19 2002-08-13 Seiko Epson Corporation Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same
TW486581B (en) 1998-01-06 2002-05-11 Seiko Epson Corp Semiconductor device, substrate for electro-optical device, electro-optical device, electronic equipment, and projection display apparatus
JP3765194B2 (ja) * 1998-01-19 2006-04-12 株式会社日立製作所 液晶表示装置
TWI226470B (en) * 1998-01-19 2005-01-11 Hitachi Ltd LCD device
KR100384672B1 (ko) * 1998-01-30 2003-05-22 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치
GB9803764D0 (en) * 1998-02-23 1998-04-15 Cambridge Display Tech Ltd Display devices
JPH11274502A (ja) 1998-03-20 1999-10-08 Toshiba Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
US5986305A (en) 1998-03-30 1999-11-16 Texas Instruments - Acer Incorporated Semiconductor device with an inverse-T gate lightly-doped drain structure
TW418539B (en) 1998-05-29 2001-01-11 Samsung Electronics Co Ltd A method for forming TFT in liquid crystal display
JP4030193B2 (ja) * 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2000033285A1 (en) * 1998-11-30 2000-06-08 Seiko Epson Corporation Electro-optical device and its manufacturing method
US7235810B1 (en) * 1998-12-03 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
EP1031873A3 (de) 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
TW469484B (en) 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6661096B1 (en) * 1999-06-29 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
KR100628679B1 (ko) * 1999-11-15 2006-09-28 엘지.필립스 엘시디 주식회사 어레이 패널, 액정 표시장치 제조방법 및 그 제조방법에따른액정표시장치
JP4801249B2 (ja) 1999-11-19 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW495854B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
TW504846B (en) 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough
EP1001467A2 (de) * 1998-11-09 2000-05-17 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und deren Herstellungsverfahren
EP1003223A2 (de) * 1998-11-17 2000-05-24 Sel Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung von einem TFT

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