HK1053012A1 - Semiconductor device and forming method thereof - Google Patents

Semiconductor device and forming method thereof

Info

Publication number
HK1053012A1
HK1053012A1 HK03105170.8A HK03105170A HK1053012A1 HK 1053012 A1 HK1053012 A1 HK 1053012A1 HK 03105170 A HK03105170 A HK 03105170A HK 1053012 A1 HK1053012 A1 HK 1053012A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
forming method
forming
semiconductor
Prior art date
Application number
HK03105170.8A
Other versions
HK1053012B (en
Inventor
Henning Sirringhaus
Richard Henry Friend
Takeo Kawase
Original Assignee
Plastic Logic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/GB2000/004934 external-priority patent/WO2001047043A1/en
Application filed by Plastic Logic Ltd filed Critical Plastic Logic Ltd
Publication of HK1053012A1 publication Critical patent/HK1053012A1/en
Publication of HK1053012B publication Critical patent/HK1053012B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
HK03105170.8A 1999-12-21 2003-07-17 Semiconductor device and forming method thereof HK1053012B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009911.9A GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
PCT/GB2000/004934 WO2001047043A1 (en) 1999-12-21 2000-12-21 Solution processed devices

Publications (2)

Publication Number Publication Date
HK1053012A1 true HK1053012A1 (en) 2003-10-03
HK1053012B HK1053012B (en) 2010-01-15

Family

ID=10866760

Family Applications (3)

Application Number Title Priority Date Filing Date
HK03105169.1A HK1053011B (en) 1999-12-21 2003-07-17 Forming interconnects
HK03105171.7A HK1053013B (en) 1999-12-21 2003-07-17 Inkjet-fabricated integrated circuits
HK03105170.8A HK1053012B (en) 1999-12-21 2003-07-17 Semiconductor device and forming method thereof

Family Applications Before (2)

Application Number Title Priority Date Filing Date
HK03105169.1A HK1053011B (en) 1999-12-21 2003-07-17 Forming interconnects
HK03105171.7A HK1053013B (en) 1999-12-21 2003-07-17 Inkjet-fabricated integrated circuits

Country Status (6)

Country Link
JP (2) JP5014547B2 (en)
KR (3) KR100927890B1 (en)
BR (3) BRPI0016670B1 (en)
CA (1) CA2829416C (en)
GB (5) GB9930217D0 (en)
HK (3) HK1053011B (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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JP4906934B2 (en) * 2003-06-02 2012-03-28 株式会社リコー Electronic element, electronic element array, and display device
JP4629997B2 (en) * 2003-06-02 2011-02-09 株式会社リコー Thin film transistor and thin film transistor array
JP4666999B2 (en) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 Wiring and thin film transistor manufacturing method
WO2005041286A1 (en) 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
JP4713192B2 (en) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP4665545B2 (en) * 2005-02-24 2011-04-06 凸版印刷株式会社 Thin film transistor manufacturing method
JP2006261535A (en) * 2005-03-18 2006-09-28 Ricoh Co Ltd Lamination structure, electronic element using the same, electronic element array using electronic element, manufacturing method of lamination structure, and manufacturing method of electronic element
JP4556838B2 (en) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 Bank forming method and film pattern forming method
KR100696555B1 (en) * 2006-02-28 2007-03-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor, the organic thin film transistor prepared using the method and a flat panel display comprising the organic thin film transistor
KR100792407B1 (en) * 2006-10-10 2008-01-08 고려대학교 산학협력단 A top gate thin film transistor using nano particle and a method for manufacturing thereof
JP4096985B2 (en) 2006-07-14 2008-06-04 セイコーエプソン株式会社 Semiconductor device manufacturing method, semiconductor device, and electro-optical device
JP4415977B2 (en) 2006-07-14 2010-02-17 セイコーエプソン株式会社 Semiconductor device manufacturing method and transfer substrate
KR100777741B1 (en) * 2006-07-19 2007-11-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor and a flat panel display comprising the organic thin film transistor prepared by the method
KR100792036B1 (en) * 2006-10-17 2008-01-04 한양대학교 산학협력단 Organic thin film transistor and manufacturing method thereof
WO2008131836A1 (en) * 2007-04-25 2008-11-06 Merck Patent Gmbh Process for preparing an electronic device
JP2009105258A (en) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc Method for manufacturing of thin-film transistor, thin-film transistor and display unit
KR101678670B1 (en) * 2010-01-22 2016-12-07 삼성전자주식회사 Method of manufacturing TFT and array TFT
JP2011216647A (en) 2010-03-31 2011-10-27 Dainippon Printing Co Ltd Method for manufacturing pattern-formed body, method for manufacturing functional element, and method for manufacturing semiconductor element
JP5866783B2 (en) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 Circuit board manufacturing method
JP6531319B2 (en) * 2016-05-16 2019-06-19 株式会社Ｎｓｃ Display device manufacturing method
JP6804082B2 (en) * 2016-09-21 2020-12-23 国立研究開発法人物質・材料研究機構 Organic transistor and its operation control method and operation control device
CN106953029B (en) * 2017-03-22 2019-08-02 京东方科技集团股份有限公司 A kind of film encapsulation method and packaging film, ink jet printing device
JP7030352B2 (en) * 2020-10-13 2022-03-07 国立研究開発法人物質・材料研究機構 Organic transistor and operation control device for organic transistor

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FR2664430B1 (en) * 1990-07-04 1992-09-18 Centre Nat Rech Scient THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS.
JP2507153B2 (en) 1990-07-31 1996-06-12 松下電器産業株式会社 Organic device and manufacturing method thereof
JP3941169B2 (en) * 1997-07-16 2007-07-04 セイコーエプソン株式会社 Manufacturing method of organic EL element
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
EP1027723B1 (en) * 1997-10-14 2009-06-17 Patterning Technologies Limited Method of forming an electric capacitor
EP1029369A4 (en) 1997-10-17 2002-04-03 Univ California Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same
CN1293784C (en) * 1998-03-17 2007-01-03 精工爱普生株式会社 Substrate for patterning thin film and surface treatment thereof
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
JP5167569B2 (en) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド Method for manufacturing transistor

Also Published As

Publication number Publication date
GB0009915D0 (en) 2000-06-07
CA2829416C (en) 2018-04-10
HK1053011B (en) 2008-11-28
JP5658789B2 (en) 2015-01-28
KR20020086870A (en) 2002-11-20
GB9930217D0 (en) 2000-02-09
JP2013211565A (en) 2013-10-10
HK1053013A1 (en) 2003-10-03
BRPI0016670B1 (en) 2018-09-11
CA2829416A1 (en) 2001-06-28
KR20020089313A (en) 2002-11-29
GB0009917D0 (en) 2000-06-07
KR20020088065A (en) 2002-11-25
HK1053012B (en) 2010-01-15
KR100909481B1 (en) 2009-07-28
KR100872154B1 (en) 2008-12-08
BRPI0016643B1 (en) 2018-04-03
GB0009911D0 (en) 2000-06-07
JP2003518756A (en) 2003-06-10
HK1053011A1 (en) 2003-10-03
JP5014547B2 (en) 2012-08-29
KR100927890B1 (en) 2009-11-23
HK1053013B (en) 2008-11-28
GB0009913D0 (en) 2000-06-07
BRPI0016660B1 (en) 2018-09-25

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