HK1053011B - Forming interconnects - Google Patents
Forming interconnectsInfo
- Publication number
- HK1053011B HK1053011B HK03105169.1A HK03105169A HK1053011B HK 1053011 B HK1053011 B HK 1053011B HK 03105169 A HK03105169 A HK 03105169A HK 1053011 B HK1053011 B HK 1053011B
- Authority
- HK
- Hong Kong
- Prior art keywords
- forming interconnects
- interconnects
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9930217.6A GB9930217D0 (en) | 1999-12-21 | 1999-12-21 | Solutiion processed transistors |
GBGB0009917.6A GB0009917D0 (en) | 1999-12-21 | 2000-04-20 | Forming interconnects |
PCT/GB2000/004940 WO2001047044A2 (en) | 1999-12-21 | 2000-12-21 | Forming interconnects |
Publications (2)
Publication Number | Publication Date |
---|---|
HK1053011A1 HK1053011A1 (en) | 2003-10-03 |
HK1053011B true HK1053011B (en) | 2008-11-28 |
Family
ID=10866760
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK03105171.7A HK1053013B (en) | 1999-12-21 | 2003-07-17 | Inkjet-fabricated integrated circuits |
HK03105169.1A HK1053011B (en) | 1999-12-21 | 2003-07-17 | Forming interconnects |
HK03105170.8A HK1053012B (en) | 1999-12-21 | 2003-07-17 | Semiconductor device and forming method thereof |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK03105171.7A HK1053013B (en) | 1999-12-21 | 2003-07-17 | Inkjet-fabricated integrated circuits |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK03105170.8A HK1053012B (en) | 1999-12-21 | 2003-07-17 | Semiconductor device and forming method thereof |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP5014547B2 (en) |
KR (3) | KR100909481B1 (en) |
BR (3) | BRPI0016660B1 (en) |
CA (1) | CA2829416C (en) |
GB (5) | GB9930217D0 (en) |
HK (3) | HK1053013B (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4906934B2 (en) * | 2003-06-02 | 2012-03-28 | 株式会社リコー | Electronic element, electronic element array, and display device |
JP4629997B2 (en) * | 2003-06-02 | 2011-02-09 | 株式会社リコー | Thin film transistor and thin film transistor array |
US7968461B2 (en) | 2003-10-28 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method |
JP4666999B2 (en) * | 2003-10-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | Wiring and thin film transistor manufacturing method |
JP4713192B2 (en) * | 2004-03-25 | 2011-06-29 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
JP4665545B2 (en) * | 2005-02-24 | 2011-04-06 | 凸版印刷株式会社 | Thin film transistor manufacturing method |
JP2006261535A (en) * | 2005-03-18 | 2006-09-28 | Ricoh Co Ltd | Lamination structure, electronic element using the same, electronic element array using electronic element, manufacturing method of lamination structure, and manufacturing method of electronic element |
JP4556838B2 (en) * | 2005-05-13 | 2010-10-06 | セイコーエプソン株式会社 | Bank forming method and film pattern forming method |
KR100696555B1 (en) * | 2006-02-28 | 2007-03-19 | 삼성에스디아이 주식회사 | A method for preparing an organic thin film transistor, the organic thin film transistor prepared using the method and a flat panel display comprising the organic thin film transistor |
KR100792407B1 (en) * | 2006-10-10 | 2008-01-08 | 고려대학교 산학협력단 | A top gate thin film transistor using nano particle and a method for manufacturing thereof |
JP4096985B2 (en) | 2006-07-14 | 2008-06-04 | セイコーエプソン株式会社 | Semiconductor device manufacturing method, semiconductor device, and electro-optical device |
JP4415977B2 (en) | 2006-07-14 | 2010-02-17 | セイコーエプソン株式会社 | Semiconductor device manufacturing method and transfer substrate |
KR100777741B1 (en) * | 2006-07-19 | 2007-11-19 | 삼성에스디아이 주식회사 | A method for preparing an organic thin film transistor and a flat panel display comprising the organic thin film transistor prepared by the method |
KR100792036B1 (en) * | 2006-10-17 | 2008-01-04 | 한양대학교 산학협력단 | Organic thin film transistor and manufacturing method thereof |
CN101669225B (en) * | 2007-04-25 | 2013-03-13 | 默克专利股份有限公司 | Process for preparing an electronic device |
JP2009105258A (en) * | 2007-10-24 | 2009-05-14 | Konica Minolta Holdings Inc | Method for manufacturing of thin-film transistor, thin-film transistor and display unit |
KR101678670B1 (en) * | 2010-01-22 | 2016-12-07 | 삼성전자주식회사 | Method of manufacturing TFT and array TFT |
JP2011216647A (en) | 2010-03-31 | 2011-10-27 | Dainippon Printing Co Ltd | Method for manufacturing pattern-formed body, method for manufacturing functional element, and method for manufacturing semiconductor element |
JP5866783B2 (en) * | 2011-03-25 | 2016-02-17 | セイコーエプソン株式会社 | Circuit board manufacturing method |
JP6531319B2 (en) * | 2016-05-16 | 2019-06-19 | 株式会社Nsc | Display device manufacturing method |
JP6804082B2 (en) * | 2016-09-21 | 2020-12-23 | 国立研究開発法人物質・材料研究機構 | Organic transistor and its operation control method and operation control device |
CN106953029B (en) * | 2017-03-22 | 2019-08-02 | 京东方科技集团股份有限公司 | A kind of film encapsulation method and packaging film, ink jet printing device |
JP7030352B2 (en) * | 2020-10-13 | 2022-03-07 | 国立研究開発法人物質・材料研究機構 | Organic transistor and operation control device for organic transistor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2664430B1 (en) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS. |
JP2507153B2 (en) | 1990-07-31 | 1996-06-12 | 松下電器産業株式会社 | Organic device and manufacturing method thereof |
JP3941169B2 (en) | 1997-07-16 | 2007-07-04 | セイコーエプソン株式会社 | Manufacturing method of organic EL element |
EP0968537B1 (en) * | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
WO1999019900A2 (en) * | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Method of forming an electronic device |
EP1029369A4 (en) | 1997-10-17 | 2002-04-03 | Univ California | Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same |
CN100530758C (en) * | 1998-03-17 | 2009-08-19 | 精工爱普生株式会社 | Thin film pattering substrate and surface treatment |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
BR0011888A (en) * | 1999-06-21 | 2004-03-09 | Univ Cambridge Tech | Process for forming an electronic device, electronic device, logic circuit, active matrix display, and polymer transistor |
-
1999
- 1999-12-21 GB GBGB9930217.6A patent/GB9930217D0/en not_active Ceased
-
2000
- 2000-04-20 GB GBGB0009913.5A patent/GB0009913D0/en not_active Ceased
- 2000-04-20 GB GBGB0009915.0A patent/GB0009915D0/en not_active Ceased
- 2000-04-20 GB GBGB0009911.9A patent/GB0009911D0/en not_active Ceased
- 2000-04-20 GB GBGB0009917.6A patent/GB0009917D0/en not_active Ceased
- 2000-12-21 CA CA2829416A patent/CA2829416C/en not_active Expired - Lifetime
- 2000-12-21 BR BRPI0016660A patent/BRPI0016660B1/en unknown
- 2000-12-21 BR BRPI0016670A patent/BRPI0016670B1/en unknown
- 2000-12-21 KR KR1020027008128A patent/KR100909481B1/en active IP Right Grant
- 2000-12-21 BR BRPI0016643-0A patent/BRPI0016643B1/en unknown
- 2000-12-21 JP JP2001547679A patent/JP5014547B2/en not_active Expired - Fee Related
- 2000-12-21 KR KR1020027008126A patent/KR100927890B1/en active IP Right Grant
- 2000-12-21 KR KR1020027008129A patent/KR100872154B1/en active IP Right Grant
-
2003
- 2003-07-17 HK HK03105171.7A patent/HK1053013B/en not_active IP Right Cessation
- 2003-07-17 HK HK03105169.1A patent/HK1053011B/en unknown
- 2003-07-17 HK HK03105170.8A patent/HK1053012B/en unknown
-
2013
- 2013-05-08 JP JP2013098405A patent/JP5658789B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
BRPI0016670B1 (en) | 2018-09-11 |
JP5658789B2 (en) | 2015-01-28 |
CA2829416A1 (en) | 2001-06-28 |
BRPI0016643B1 (en) | 2018-04-03 |
HK1053012A1 (en) | 2003-10-03 |
KR100872154B1 (en) | 2008-12-08 |
JP2013211565A (en) | 2013-10-10 |
KR20020089313A (en) | 2002-11-29 |
GB0009917D0 (en) | 2000-06-07 |
HK1053013B (en) | 2008-11-28 |
JP5014547B2 (en) | 2012-08-29 |
KR100909481B1 (en) | 2009-07-28 |
GB9930217D0 (en) | 2000-02-09 |
KR100927890B1 (en) | 2009-11-23 |
CA2829416C (en) | 2018-04-10 |
HK1053013A1 (en) | 2003-10-03 |
BRPI0016660B1 (en) | 2018-09-25 |
KR20020088065A (en) | 2002-11-25 |
JP2003518756A (en) | 2003-06-10 |
GB0009913D0 (en) | 2000-06-07 |
HK1053011A1 (en) | 2003-10-03 |
GB0009915D0 (en) | 2000-06-07 |
KR20020086870A (en) | 2002-11-20 |
HK1053012B (en) | 2010-01-15 |
GB0009911D0 (en) | 2000-06-07 |
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