GB0009917D0 - Forming interconnects - Google Patents

Forming interconnects

Info

Publication number
GB0009917D0
GB0009917D0 GBGB0009917.6A GB0009917A GB0009917D0 GB 0009917 D0 GB0009917 D0 GB 0009917D0 GB 0009917 A GB0009917 A GB 0009917A GB 0009917 D0 GB0009917 D0 GB 0009917D0
Authority
GB
United Kingdom
Prior art keywords
forming interconnects
interconnects
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0009917.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd (CUTS)
Seiko Epson Corp
Original Assignee
Cambridge University Technical Services Ltd (CUTS)
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GBGB9930217.6A priority Critical patent/GB9930217D0/en
Application filed by Cambridge University Technical Services Ltd (CUTS), Seiko Epson Corp filed Critical Cambridge University Technical Services Ltd (CUTS)
Publication of GB0009917D0 publication Critical patent/GB0009917D0/en
Priority claimed from BR0016661A external-priority patent/BR0016661B1/en
Priority claimed from TW90109546A external-priority patent/TW554476B/en
Application status is Ceased legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0003Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0004Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0012Deposition of organic semiconductor materials on a substrate special provisions for the orientation or alignment of the layer to be deposited
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0021Formation of conductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
    • H01L51/052Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/283Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part comprising components of the field-effect type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0014Processes specially adapted for the manufacture or treatment of devices or of parts thereof for changing the shape of the device layer, e.g. patterning
    • H01L51/0017Processes specially adapted for the manufacture or treatment of devices or of parts thereof for changing the shape of the device layer, e.g. patterning etching of an existing layer
    • H01L51/0018Processes specially adapted for the manufacture or treatment of devices or of parts thereof for changing the shape of the device layer, e.g. patterning etching of an existing layer using photolithographic techniques
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/002Making n- or p-doped regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • H01L51/0035Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
    • H01L51/0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • H01L51/0035Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
    • H01L51/0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H01L51/0037Polyethylene dioxythiophene [PEDOT] and derivatives
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • H01L51/0035Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
    • H01L51/0039Polyeflurorene and derivatives
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • H01L51/0043Copolymers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0059Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
GBGB0009917.6A 1999-12-21 2000-04-20 Forming interconnects Ceased GB0009917D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
BR0016661A BR0016661B1 (en) 1999-12-21 2000-12-21 Methods for forming an electronic device, electronic device and display device
PCT/GB2000/004940 WO2001047044A2 (en) 1999-12-21 2000-12-21 Forming interconnects
CN 00818590 CN100379048C (en) 1999-12-21 2000-12-21 Forming interconnects
CA2394895A CA2394895C (en) 1999-12-21 2000-12-21 Forming interconnects
JP2001547678A JP5073141B2 (en) 1999-12-21 2000-12-21 Method of forming internal connection
AU22069/01A AU779878B2 (en) 1999-12-21 2000-12-21 Forming interconnects
EP00985667.5A EP1243035B1 (en) 1999-12-21 2000-12-21 Forming interconnects
TW90109546A TW554476B (en) 2000-04-20 2001-04-20 Method for forming an electronic device and display device
US10/176,173 US7098061B2 (en) 1999-12-21 2002-06-21 Forming interconnects using locally deposited solvents
HK03105169A HK1053011A1 (en) 1999-12-21 2003-07-17 Forming interconnects
US11/467,687 US7763501B2 (en) 1999-12-21 2006-08-28 Forming interconnects

Publications (1)

Publication Number Publication Date
GB0009917D0 true GB0009917D0 (en) 2000-06-07

Family

ID=10866760

Family Applications (5)

Application Number Title Priority Date Filing Date
GBGB9930217.6A Ceased GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009917.6A Ceased GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects
GBGB0009911.9A Ceased GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9930217.6A Ceased GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors

Family Applications After (3)

Application Number Title Priority Date Filing Date
GBGB0009911.9A Ceased GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing

Country Status (6)

Country Link
JP (2) JP5014547B2 (en)
KR (2) KR100927890B1 (en)
BR (3) BRPI0016660B1 (en)
CA (1) CA2829416C (en)
GB (5) GB9930217D0 (en)
HK (3) HK1053013A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4629997B2 (en) * 2003-06-02 2011-02-09 株式会社リコー A thin film transistor and the thin film transistor array
JP4906934B2 (en) * 2003-06-02 2012-03-28 株式会社リコー Electronic devices, electronics array and a display device
US7968461B2 (en) 2003-10-28 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
JP4666999B2 (en) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 The method for manufacturing a wiring and a thin film transistor
JP4713192B2 (en) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 A method for manufacturing a thin film transistor
JP4665545B2 (en) * 2005-02-24 2011-04-06 凸版印刷株式会社 A method of manufacturing a thin film transistor
JP2006261535A (en) * 2005-03-18 2006-09-28 Ricoh Co Ltd Lamination structure, electronic element using the same, electronic element array using electronic element, manufacturing method of lamination structure, and manufacturing method of electronic element
JP4556838B2 (en) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 The methods for forming and pattern of the bank
KR100696555B1 (en) * 2006-02-28 2007-03-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor, the organic thin film transistor prepared using the method and a flat panel display comprising the organic thin film transistor
JP4096985B2 (en) 2006-07-14 2008-06-04 セイコーエプソン株式会社 Method of manufacturing a semiconductor device, a semiconductor device, and an electro-optical device
JP4415977B2 (en) 2006-07-14 2010-02-17 セイコーエプソン株式会社 Method of manufacturing a semiconductor device and the substrate to be transferred,
KR100777741B1 (en) * 2006-07-19 2007-11-19 삼성에스디아이 주식회사 A method for preparing an organic thin film transistor and a flat panel display comprising the organic thin film transistor prepared by the method
KR100792407B1 (en) * 2006-10-10 2008-01-08 고려대학교 산학협력단 A top gate thin film transistor using nano particle and a method for manufacturing thereof
KR100792036B1 (en) * 2006-10-17 2008-01-04 한양대학교 산학협력단 Organic thin film transistor and manufacturing method thereof
CN101669225B (en) * 2007-04-25 2013-03-13 默克专利股份有限公司 Process for preparing an electronic device
JP2009105258A (en) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc Method for manufacturing of thin-film transistor, thin-film transistor and display unit
JP2011216647A (en) 2010-03-31 2011-10-27 Dainippon Printing Co Ltd Method for manufacturing pattern-formed body, method for manufacturing functional element, and method for manufacturing semiconductor element
JP5866783B2 (en) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 Method of manufacturing a circuit board
JP2017207528A (en) * 2016-05-16 2017-11-24 株式会社Nsc Display manufacturing method
CN106953029A (en) * 2017-03-22 2017-07-14 京东方科技集团股份有限公司 Thin film encapsulation method, encapsulation film and ink-jet printing equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664430B1 (en) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor structure of thin film field effect set, in which the insulator and the semiconductor are made of organic materials.
JP3941169B2 (en) * 1997-07-16 2007-07-04 セイコーエプソン株式会社 A method of manufacturing an organic el element
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
EP1027723B1 (en) * 1997-10-14 2009-06-17 Patterning Technologies Limited Method of forming an electric capacitor
CN1280708A (en) 1997-10-17 2001-01-17 加利福尼亚大学董事会 Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same
EP1793650B1 (en) * 1998-03-17 2014-03-05 Seiko Epson Corporation Method for manufacturing a flat panel display
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
BR0011888A (en) * 1999-06-21 2004-03-09 Univ Cambridge Tech A method of forming an electronic device, electronic device, logic circuitry, active matrix display, and polymer transistor

Also Published As

Publication number Publication date
HK1053013A1 (en) 2008-11-28
KR100927890B1 (en) 2009-11-23
GB0009911D0 (en) 2000-06-07
BRPI0016643B1 (en) 2018-04-03
JP5014547B2 (en) 2012-08-29
BRPI0016670B1 (en) 2018-09-11
HK1053012A1 (en) 2010-01-15
JP2013211565A (en) 2013-10-10
GB0009915D0 (en) 2000-06-07
CA2829416A1 (en) 2001-06-28
HK1053011A1 (en) 2008-11-28
GB0009913D0 (en) 2000-06-07
JP2003518756A (en) 2003-06-10
BRPI0016660B1 (en) 2018-09-25
GB9930217D0 (en) 2000-02-09
KR100909481B1 (en) 2009-07-28
JP5658789B2 (en) 2015-01-28
CA2829416C (en) 2018-04-10

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Legal Events

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AT Applications terminated before publication under section 16(1)