SG10201910998SA - Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system - Google Patents

Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Info

Publication number
SG10201910998SA
SG10201910998SA SG10201910998SA SG10201910998SA SG10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA
Authority
SG
Singapore
Prior art keywords
performance
implantation system
ion
ion implantation
enhanced lifetime
Prior art date
Application number
SG10201910998SA
Other languages
English (en)
Inventor
Robert Kaim
Joseph Sweeney
Anthony Avila
Richard Ray
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=44507609&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10201910998S(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201910998SA publication Critical patent/SG10201910998SA/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
SG10201910998SA 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system SG10201910998SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30842810P 2010-02-26 2010-02-26
US39071510P 2010-10-07 2010-10-07

Publications (1)

Publication Number Publication Date
SG10201910998SA true SG10201910998SA (en) 2020-01-30

Family

ID=44507609

Family Applications (4)

Application Number Title Priority Date Filing Date
SG10201609427WA SG10201609427WA (en) 2010-02-26 2011-02-26 Method And Apparatus For Enhanced Lifetime And Performance Of Ion Source In An Ion Implantation System
SG10201506698VA SG10201506698VA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG2012059093A SG183248A1 (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG10201910998SA SG10201910998SA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Family Applications Before (3)

Application Number Title Priority Date Filing Date
SG10201609427WA SG10201609427WA (en) 2010-02-26 2011-02-26 Method And Apparatus For Enhanced Lifetime And Performance Of Ion Source In An Ion Implantation System
SG10201506698VA SG10201506698VA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG2012059093A SG183248A1 (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Country Status (9)

Country Link
US (6) US8237134B2 (zh)
EP (2) EP2539923A4 (zh)
JP (6) JP5906196B2 (zh)
KR (7) KR20170132909A (zh)
CN (3) CN107578972A (zh)
MY (1) MY166024A (zh)
SG (4) SG10201609427WA (zh)
TW (5) TWI582836B (zh)
WO (1) WO2011106750A2 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI582836B (zh) * 2010-02-26 2017-05-11 恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
KR20160018874A (ko) * 2012-08-28 2016-02-17 프랙스에어 테크놀로지, 인코포레이티드 규소 이온 주입 동안에 이온 빔 전류 및 성능을 개선하기 위한 규소-함유 도펀트 조성물, 시스템 및 그의 사용 방법
WO2014100621A1 (en) * 2012-12-21 2014-06-26 Praxair Technology, Inc. Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation
US9831063B2 (en) * 2013-03-05 2017-11-28 Entegris, Inc. Ion implantation compositions, systems, and methods
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
CN108796446B (zh) * 2013-05-02 2021-08-06 普莱克斯技术有限公司 用于富硒离子注入的供应源和方法
CN105431927A (zh) * 2013-05-21 2016-03-23 恩特格里斯公司 富集硅的前体组合物及使用其的设备和方法
CN103413746A (zh) * 2013-06-25 2013-11-27 上海华力微电子有限公司 提高离子注入机使用周期的锗注入方法
US9524849B2 (en) * 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
WO2015023903A1 (en) * 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP6238689B2 (ja) * 2013-11-13 2017-11-29 住友重機械イオンテクノロジー株式会社 イオン生成装置およびイオン生成方法
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
KR101952698B1 (ko) * 2014-10-27 2019-02-28 엔테그리스, 아이엔씨. 이온 주입 방법 및 장치
JP6879663B2 (ja) * 2014-12-25 2021-06-02 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
GB201514895D0 (en) * 2015-08-21 2015-10-07 Finlay Alan P J Energy conversion system and reaction apparatus
SG10201910772PA (en) * 2016-03-28 2020-01-30 Entegris Inc Hydrogenated isotopically enriched boron trifluoride dopant source gas composition
KR20180132800A (ko) * 2016-04-05 2018-12-12 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업물 내로 프로세싱 종을 주입하는 방법 및 작업물 내로 도펀트를 주입하는 방법, 및 작업물을 프로세싱하기 위한 장치
US10170286B2 (en) * 2016-09-30 2019-01-01 Axcelis Technologies, Inc. In-situ cleaning using hydrogen peroxide as co-gas to primary dopant or purge gas for minimizing carbon deposits in an ion source
US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
US11098402B2 (en) 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
US11299802B2 (en) 2018-05-17 2022-04-12 Entegris, Inc. Germanium tetraflouride and hydrogen mixtures for an ion implantation system
CN109300778B (zh) * 2018-09-30 2021-10-15 上海华力集成电路制造有限公司 离子注入方法
US11049728B2 (en) 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
SG11202105498QA (en) * 2018-12-15 2021-06-29 Entegris Inc Fluorine ion implantation method and system
CN109738835B (zh) * 2018-12-31 2021-05-28 聚光科技(杭州)股份有限公司 离子源灯丝的工作方法
TW202219294A (zh) * 2020-10-02 2022-05-16 美商恩特葛瑞斯股份有限公司 用於產生鋁離子之方法及系統
CN117038423A (zh) * 2023-10-09 2023-11-10 上海凡森璞瑞新材料股份有限公司 包含四氟化锗混合气的离子注入系统、方法及掺杂物质

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US4331647A (en) 1980-03-03 1982-05-25 Goldenberg Milton David Tumor localization and therapy with labeled antibody fragments specific to tumor-associated markers
US4348376A (en) 1980-03-03 1982-09-07 Goldenberg Milton David Tumor localization and therapy with labeled anti-CEA antibody
JPS588071A (ja) 1981-07-08 1983-01-18 Nippon Iyakuhin Kogyo Kk ２−ベンゾチアゾリノン−３−酢酸アミド誘導体またはその薬学的に活性な塩類の製造法
US4459427A (en) 1981-10-31 1984-07-10 The British Petroleum Company P.L.C. Process for the conversion of an alkane to a mixture of an alcohol and a ketone
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
DE3584105D1 (de) 1984-03-16 1991-10-24 Hitachi Ltd Ionenquelle.
JPS60221566A (ja) 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
US4722978A (en) 1985-08-30 1988-02-02 The B. F. Goodrich Company Allyl terminated macromolecular monomers of polyethers
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
US4680358A (en) 1985-11-08 1987-07-14 The B F Goodrich Company Styryl terminated macromolecular monomers of polyethers
JPS6315228A (ja) 1986-07-08 1988-01-22 Asahi Glass Co Ltd エレクトロクロミツク素子
JPH0772167B2 (ja) 1986-09-04 1995-08-02 サントリー株式会社 ４―アミノ―３―ヒドロキシ酪酸誘導体の製法
US4851255A (en) 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
JPS6483147A (en) 1987-09-25 1989-03-28 Olympus Optical Co Manufacture of chemical sensitivity field effect transistor
JPH01225117A (ja) 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法及びその製造装置
JP2699549B2 (ja) 1988-06-03 1998-01-19 日産化学工業株式会社 ４―ベンゾイル―５―ヒドロキシピラゾール類の製法
JP2533639B2 (ja) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
JPH03165443A (ja) * 1989-11-24 1991-07-17 Shimadzu Corp イオン注入方法
US5144409A (en) 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
US5442191A (en) 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
JPH05254808A (ja) 1992-03-10 1993-10-05 Semiconductor Energy Lab Co Ltd 窒化ほう素の作製方法
JPH0680681A (ja) 1992-07-15 1994-03-22 Nippon Kayaku Co Ltd ホスホニウム化合物及びそれを用いた電子写真用トナー
SE470493B (sv) 1992-10-19 1994-06-06 Alfa Laval Separation Ab Centrifugalseparator med i en utmatningskammare anordnade långsträckta medbringande element
US5395783A (en) 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
JP3259400B2 (ja) 1993-02-18 2002-02-25 ソニー株式会社 半導体装置並びに固体撮像素子
US5306922A (en) * 1993-03-16 1994-04-26 Genus, Inc. Production of high beam currents at low energies for use in ion implantation systems
KR950703212A (ko) 1993-06-23 1995-08-23 마에다 카쭈노수케 전지용전극, 그것을 사용한 2차전지 및 전지용 전극의 제조방법("Electrode for Battery, Secondary Battery Using the Same and Process for producing Electrode for Battery")
JPH0765761A (ja) * 1993-08-30 1995-03-10 Hitachi Ltd 薄膜形成方法およびイオン注入方法
JPH0790201A (ja) 1993-09-22 1995-04-04 Hokko Chem Ind Co Ltd 水中防汚塗料
JPH08190886A (ja) * 1995-01-10 1996-07-23 Mitsubishi Electric Corp イオン注入装置、イオン注入方法および半導体装置
JP3502185B2 (ja) * 1995-04-12 2004-03-02 松下電器産業株式会社 イオン注入方法
DE19537759C1 (de) 1995-10-10 1996-11-28 Siemens Ag Verfahren und Vorrichtung zur Implantation von Dotierstoff
GB2344213B (en) * 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved field control
US5977552A (en) 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
US5993766A (en) * 1996-05-20 1999-11-30 Advanced Technology Materials, Inc. Gas source and dispensing system
GB2314202B (en) * 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
GB2317265A (en) 1996-09-13 1998-03-18 Aea Technology Plc Radio frequency plasma generator
JPH10251592A (ja) 1997-03-07 1998-09-22 Kansai Paint Co Ltd 塗料組成物およびその塗装法
US6086837A (en) 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US5943594A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US5962858A (en) 1997-07-10 1999-10-05 Eaton Corporation Method of implanting low doses of ions into a substrate
JPH1154451A (ja) * 1997-08-07 1999-02-26 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
US6096467A (en) 1997-11-19 2000-08-01 Mita Industrial Co., Ltd. Positive charging color toner
JP3099819B2 (ja) * 1997-11-28 2000-10-16 セイコーエプソン株式会社 半導体装置の製造方法
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6070576A (en) * 1998-06-02 2000-06-06 Advanced Technology Materials, Inc. Adsorbent-based storage and dispensing system
US6215125B1 (en) 1998-09-16 2001-04-10 International Business Machines Corporation Method to operate GEF4 gas in hot cathode discharge ion sources
US6614082B1 (en) 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6146601A (en) * 1999-10-28 2000-11-14 Eagle-Picher Industries, Inc. Enrichment of silicon or germanium isotopes
US6756600B2 (en) 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6376664B1 (en) 1999-03-17 2002-04-23 The Ohio State University Cyclic bis-benzimidazole ligands and metal complexes thereof
JP3401561B2 (ja) 1999-03-29 2003-04-28 独立行政法人物質・材料研究機構 高純度同位体シリコン結晶膜の製造方法
US6799603B1 (en) * 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
US6420304B1 (en) 2000-04-20 2002-07-16 China Petrochemical Development Corporation Polymer-supported carbonylation catalyst and its use
JP4634569B2 (ja) 2000-05-25 2011-02-16 東芝モバイルディスプレイ株式会社 イオン注入装置及び薄膜半導体装置
MXPA02012011A (es) 2000-06-19 2003-04-22 Kimberly Clark Co Fotoiniciaodres novedosos y aplicaciones para los mismos.
US6537606B2 (en) 2000-07-10 2003-03-25 Epion Corporation System and method for improving thin films by gas cluster ion beam processing
KR20000072651A (ko) 2000-08-08 2000-12-05 이관호 식물 신품종 쌈추 및 그 육종방법
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US20020058385A1 (en) 2000-10-26 2002-05-16 Taiji Noda Semiconductor device and method for manufacturing the same
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP3824058B2 (ja) 2001-05-23 2006-09-20 独立行政法人産業技術総合研究所 カルボランスーパークラスターおよびその製造方法
US7119400B2 (en) 2001-07-05 2006-10-10 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
JP2003053153A (ja) 2001-08-20 2003-02-25 Japan Atom Energy Res Inst レーザーによるシリコン同位体の高効率分離・濃縮法
US8037717B2 (en) * 2001-10-26 2011-10-18 Corning Incorporated Methods and apparatus for pulsed doping or drying a soot preform
GB0128913D0 (en) 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
AU2002364611A1 (en) 2001-12-31 2003-07-24 The Ohio State University Research Foundation Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
GB2387022B (en) 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
KR100703121B1 (ko) 2002-06-26 2007-04-05 세미이큅, 인코포레이티드 이온 주입 방법
US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
JP2004039735A (ja) 2002-07-01 2004-02-05 Fujitsu Ltd 半導体基板及びその製造方法
JP2004079930A (ja) 2002-08-22 2004-03-11 Toshiba Corp 半導体材料、その製造方法、及びｓｏｉ型半導体基板
KR100464935B1 (ko) 2002-09-17 2005-01-05 주식회사 하이닉스반도체 불화붕소화합물 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
US7410890B2 (en) * 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
WO2004053945A2 (en) 2002-12-12 2004-06-24 Epion Corporation Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
US7296532B2 (en) * 2002-12-18 2007-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Bypass gas feed system and method to improve reactant gas flow and film deposition
US6780896B2 (en) 2002-12-20 2004-08-24 Kimberly-Clark Worldwide, Inc. Stabilized photoinitiators and applications thereof
US6936505B2 (en) 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
KR100541050B1 (ko) * 2003-07-22 2006-01-11 삼성전자주식회사 가스공급장치 및 이를 이용한 반도체소자 제조설비
WO2005020306A1 (ja) 2003-08-25 2005-03-03 Matsushita Electric Industrial Co., Ltd. 不純物導入層の形成方法及び被処理物の洗浄方法並びに不純物導入装置及びデバイスの製造方法
JP2005093518A (ja) 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd 不純物導入の制御方法および不純物導入装置
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
CN1964620B (zh) 2003-12-12 2010-07-21 山米奎普公司 对从固体升华的蒸气流的控制
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7015108B2 (en) 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
US7494888B2 (en) 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US7247546B2 (en) 2004-08-05 2007-07-24 International Business Machines Corporation Method of forming strained silicon materials with improved thermal conductivity
US7397048B2 (en) * 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7404845B2 (en) 2004-09-23 2008-07-29 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
US7563308B2 (en) * 2004-09-23 2009-07-21 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
US20080242066A1 (en) * 2004-10-22 2008-10-02 Semiequip Inc. Method Of Manufacturing Semiconductor
US7955797B2 (en) * 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
US7687025B2 (en) 2004-11-12 2010-03-30 The Boeing Company Isotopic lightening
US20060104851A1 (en) 2004-11-12 2006-05-18 Tillotson Brian J Isotopic densification of propellant
JP2008522429A (ja) * 2004-12-03 2008-06-26 エピオン コーポレーション ガスクラスタイオン照射による極浅接合部の形成
KR20060077942A (ko) * 2004-12-30 2006-07-05 매그나칩 반도체 유한회사 이온주입기의 사용방법
WO2006095086A2 (fr) 2005-03-07 2006-09-14 Laurence Faure Traçabilite des anomalies du cycle cellulaire ciblant l'oncologie et la neurodegenerescence.
US20100224264A1 (en) 2005-06-22 2010-09-09 Advanced Technology Materials, Inc. Apparatus and process for integrated gas blending
US20060292762A1 (en) * 2005-06-22 2006-12-28 Epion Corporation Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiation
US7491947B2 (en) 2005-08-17 2009-02-17 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of indirectly heated cathode ion source
JP2009507344A (ja) * 2005-08-30 2009-02-19 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 低圧ドーパントガスの高電圧イオン源への配送
US20100112795A1 (en) 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
DE102005054218B4 (de) 2005-11-14 2011-06-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
US7666771B2 (en) 2005-12-09 2010-02-23 Semequip, Inc. System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
WO2007134183A2 (en) 2006-05-13 2007-11-22 Advanced Technology Materials, Inc. Chemical reagent delivery system utilizing ionic liquid storage medium
US8853065B2 (en) 2006-05-16 2014-10-07 Cree, Inc. Methods for fabricating semiconductor devices having reduced implant contamination
GB2455464B (en) 2006-08-25 2011-06-29 Nat Inst For Materials Science Semiconductor and method for producing the same
US8013312B2 (en) 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7887634B2 (en) 2006-12-22 2011-02-15 Infineon Technologies Ag Method of producing a semiconductor element and semiconductor element
US7586109B2 (en) * 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7833886B2 (en) 2007-05-14 2010-11-16 Infineon Technologies Ag Method of producing a semiconductor element in a substrate
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN101848863A (zh) 2007-11-02 2010-09-29 塞门库普公司 簇硼的制造方法
KR20110005683A (ko) * 2008-02-11 2011-01-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 가공 시스템에서의 이온 공급원 세정법
US8252115B2 (en) * 2008-04-02 2012-08-28 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane
JP2011523764A (ja) 2008-05-30 2011-08-18 アクセリス テクノロジーズ， インコーポレイテッド 水素化ホウ素を半導体ウェハに注入する場合の該半導体ウェハにおける粒子の制御
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US8809800B2 (en) 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US7973293B2 (en) 2009-01-09 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Implantation quality improvement by xenon/hydrogen dilution gas
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
EP2293114B1 (en) * 2009-09-02 2017-09-06 3833364 Canada Inc. (operating as DETEC) Neutron energy spectrometer
US9627180B2 (en) 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US8237136B2 (en) 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
EP2494581B1 (en) 2009-10-27 2016-05-18 Entegris Inc. Ion implantation system and method
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US20110143527A1 (en) 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
TWI582836B (zh) 2010-02-26 2017-05-11 恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
JP5714831B2 (ja) 2010-03-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants

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