SG10201509808WA - Ion implanter system including remote dopant source, and method comprising same - Google Patents

Ion implanter system including remote dopant source, and method comprising same

Info

Publication number
SG10201509808WA
SG10201509808WA SG10201509808WA SG10201509808WA SG10201509808WA SG 10201509808W A SG10201509808W A SG 10201509808WA SG 10201509808W A SG10201509808W A SG 10201509808WA SG 10201509808W A SG10201509808W A SG 10201509808WA SG 10201509808W A SG10201509808W A SG 10201509808WA
Authority
SG
Singapore
Prior art keywords
same
system including
ion implanter
dopant source
including remote
Prior art date
Application number
SG10201509808WA
Inventor
W Karl Olander
Robert Kaim
Joseph D Sweeney
Joseph R Despres
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201509808WA publication Critical patent/SG10201509808WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
SG10201509808WA 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same SG10201509808WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41840210P 2010-11-30 2010-11-30

Publications (1)

Publication Number Publication Date
SG10201509808WA true SG10201509808WA (en) 2015-12-30

Family

ID=46172480

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201509808WA SG10201509808WA (en) 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same
SG2013041694A SG190729A1 (en) 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013041694A SG190729A1 (en) 2010-11-30 2011-11-26 Ion implanter system including remote dopant source, and method comprising same

Country Status (8)

Country Link
US (1) US20130251913A1 (en)
EP (1) EP2647036B1 (en)
JP (1) JP6355336B2 (en)
KR (1) KR101953401B1 (en)
CN (1) CN103329252B (en)
SG (2) SG10201509808WA (en)
TW (1) TWI557771B (en)
WO (1) WO2012074889A2 (en)

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CN105637615A (en) * 2013-10-11 2016-06-01 应用材料公司 Compact hazardous gas line distribution enabling system single point connections for multiple chambers
JP6385708B2 (en) 2014-04-18 2018-09-05 日立ジョンソンコントロールズ空調株式会社 Screw compressor
KR101929696B1 (en) * 2014-10-30 2018-12-14 엔테그리스, 아이엔씨. Ion implanter comprising integrated ventilation system
CN107408271A (en) 2015-02-12 2017-11-28 恩特格里斯公司 Intelligence encapsulation
SG11201809477WA (en) * 2016-05-13 2018-11-29 Entegris Inc Fluorinated compositions for ion source performance improvement in nitrogen ion implantation
TWI693656B (en) * 2019-04-25 2020-05-11 晨碩國際有限公司 Gas supply system for an ion implanter
JP7255952B2 (en) * 2019-06-20 2023-04-11 直嗣 山本 ion beam source
JP7449747B2 (en) 2020-03-30 2024-03-14 住友重機械工業株式会社 Ion source gas piping structure and ion source gas piping system
US11527380B2 (en) 2020-04-01 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implanter toxic gas delivery system
US11569062B2 (en) 2020-05-22 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gas delivery system for ion implanter

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JPS6298543A (en) * 1985-10-24 1987-05-08 Sony Corp Ion beam generator
FR2633143B1 (en) * 1988-06-21 1990-10-12 Eferel Sa METHOD AND DEVICE FOR SUPPLYING PROCESSING GAS TO A REACTOR LOCATED IN AN AREA SUBJECT TO INTENSE ELECTRIC AND / OR ELECTROMAGNETIC FIELDS
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5980608A (en) * 1998-01-07 1999-11-09 Advanced Technology Materials, Inc. Throughflow gas storage and dispensing system
US6500238B1 (en) * 2000-08-10 2002-12-31 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
KR101027485B1 (en) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 Improved process for deposition of semiconductor films
US6857447B2 (en) 2002-06-10 2005-02-22 Advanced Technology Materials, Inc. Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases
US6717079B2 (en) * 2002-06-21 2004-04-06 Varian Semiconductr Equipmentassociates, Inc. Electrical switches and methods of establishing an electrical connection
JP3971965B2 (en) * 2002-07-04 2007-09-05 株式会社神戸製鋼所 Method and apparatus for supplying material gas to ion source
US6770117B2 (en) * 2002-10-31 2004-08-03 Advanced Technology Materials, Inc. Ion implantation and wet bench systems utilizing exhaust gas recirculation
CN1894763B (en) * 2003-12-12 2010-12-08 山米奎普公司 Method and apparatus for prolonging normal operation time of equipment in ion implantation process
US7955797B2 (en) * 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
DE102004052580B4 (en) * 2004-10-29 2008-09-25 Advanced Micro Devices, Inc., Sunnyvale Apparatus and method for supplying precursor gases to an implantation facility
JP2008540944A (en) * 2005-05-03 2008-11-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Fluid storage / distribution system and fluid supply process including the same
JP2009507344A (en) * 2005-08-30 2009-02-19 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド Delivery of low-pressure dopant gas to high-voltage ion source
JP5105775B2 (en) * 2006-06-05 2012-12-26 キヤノン株式会社 Insulating piping, plasma processing apparatus and method
US7775236B2 (en) * 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
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Also Published As

Publication number Publication date
JP2014505322A (en) 2014-02-27
CN103329252B (en) 2016-06-15
CN103329252A (en) 2013-09-25
SG190729A1 (en) 2013-07-31
EP2647036A4 (en) 2015-12-16
KR20130124338A (en) 2013-11-13
TW201230134A (en) 2012-07-16
JP6355336B2 (en) 2018-07-11
KR101953401B1 (en) 2019-02-28
EP2647036A2 (en) 2013-10-09
US20130251913A1 (en) 2013-09-26
TWI557771B (en) 2016-11-11
WO2012074889A3 (en) 2013-01-10
EP2647036B1 (en) 2017-10-11
WO2012074889A2 (en) 2012-06-07

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