SG11201809477WA - Fluorinated compositions for ion source performance improvement in nitrogen ion implantation - Google Patents

Fluorinated compositions for ion source performance improvement in nitrogen ion implantation

Info

Publication number
SG11201809477WA
SG11201809477WA SG11201809477WA SG11201809477WA SG11201809477WA SG 11201809477W A SG11201809477W A SG 11201809477WA SG 11201809477W A SG11201809477W A SG 11201809477WA SG 11201809477W A SG11201809477W A SG 11201809477WA SG 11201809477W A SG11201809477W A SG 11201809477WA
Authority
SG
Singapore
Prior art keywords
billerica
massachusetts
entegris
concord
road
Prior art date
Application number
SG11201809477WA
Inventor
Barry Lewis Chambers
Biing-Tsair Tien
Joseph D Sweeney
Ying Tang
Oleg Byl
Steven E Bishop
Sharad N Yedave
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11201809477WA publication Critical patent/SG11201809477WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 1111111111111111111111111111111111111111111111111111111111111111111111111111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2017/196934 Al 16 November 2017 (16.11.2017) WIPO I PCT (51) International Patent Classification: 01821 (US). YEDAVE, Sharad N.; Entegris, Inc., 129 H01.137/02 (2006.01) H01J 37/317 (2006.01) Concord Road, Billerica, Massachusetts 01821 (US). (21) International Application Number: (74) Agent: KISSOON, Nidhi G.; Entegris, Inc., 129 Concord PCT/US2017/031894 Road, Billerica, Massachusetts 01821 (US). (22) International Filing Date: (81) Designated States (unless otherwise indicated, for every 10 May 2017 (10.05.2017) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, (25) Filing Language: English CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, (26) Publication Language: English DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (30) Priority Data: KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, 62/336,550 13 May 2016 (13.05.2016) US MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (71) Applicant: ENTEGRIS, INC. [US/US]; 129 Concord PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, Road, Billerica, Massachusetts 01821 (US). SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (72) Inventors: CHAMBERS, Barry Lewis; Entegris, Inc., 129 Concord Road, Billerica, Massachusetts 01821 (US). (84) Designated States (unless otherwise indicated, for every TAOYUAN, Bling-Tsair Tien; Entegris, Inc., 129 kind of regional protection available): ARIPO (BW, GH, Concord Road, Billerica, Massachusetts 01821 (US). GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, - SWEENEY, Joseph D.; Entegris, Inc., 129 Concord Road, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, Billerica, Massachusetts 01821 (US). TANG, Ying; En- TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, = tegris, Inc., 129 Concord Road, Billerica, Massachusetts EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 01821 (US). BYL, Oleg; Entegris, Inc., 129 Concord Road, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, Billerica, Massachusetts 01821 (US). BISHOP, Steven E.; TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, = _ - Entegris, Inc., 129 Concord Road, Billerica, Massachusetts KM, ML, MR, NE, SN, TD, TG). - (54) Title: FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENT IN NITROGEN ION IM- = PLANTATION = (57) : Compositions, methods, and apparatus are described for car- =_ ion implantation, incidence lying out nitrogen which avoid the of severe _ glitching when the nitrogen ion implantation is followed by another ion im- = = 33 - plantation operation susceptible to glitching, e.g., implantation of arsenic 74 and/or phosphorus ionic species. The nitrogen ion implantation operation J =s = 44 s 75 is ion implantation advantageously conducted with a nitrogen composition introduced to or formed in the ion source chamber of the ion implantation = - system, wherein the nitrogen ion implantation composition includes nitro- (N2) do ant and a including one or more gen gas glitching-suppressing gas = = = _ _ 12 selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF 5 , AsF3, AsF5, CF4 and other fluorinated hydrocarbons of C x y F (x?1, y>1) formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, 02, N20, general = 1, 1-1 42 71' 34 52 64 36 NO, NO2, N204, and 0 3 , and optionally hydrogen-containing gas, e.g., hy- drogen-containing gas including one or more selected from the group con- sisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H25, H2Se, CH4 and other hydrocarbons of C x y H (x>1, y>1) general formula and Gel - 14. en C:r 18 1-1 IN ,-1 © ei FIG. I O [Continued on next page] WO 2017/196934 Al MIDEDIMOMMIDIRMEMEEMIMINIEDOHMEDIMIE Published: — with international search report (Art. 21(3))
SG11201809477WA 2016-05-13 2017-05-10 Fluorinated compositions for ion source performance improvement in nitrogen ion implantation SG11201809477WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662336550P 2016-05-13 2016-05-13
PCT/US2017/031894 WO2017196934A1 (en) 2016-05-13 2017-05-10 Fluorinated compositions for ion source performance improvement in nitrogen ion implantation

Publications (1)

Publication Number Publication Date
SG11201809477WA true SG11201809477WA (en) 2018-11-29

Family

ID=58739390

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201809477WA SG11201809477WA (en) 2016-05-13 2017-05-10 Fluorinated compositions for ion source performance improvement in nitrogen ion implantation

Country Status (7)

Country Link
US (2) US20170330726A1 (en)
JP (1) JP6730457B2 (en)
KR (1) KR102202345B1 (en)
CN (1) CN109196617B (en)
SG (1) SG11201809477WA (en)
TW (1) TWI765887B (en)
WO (1) WO2017196934A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021524648A (en) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド A mixture of germanium tetrafluoride and hydrogen for ion implantation systems
WO2020123901A1 (en) * 2018-12-15 2020-06-18 Entegris, Inc. Fluorine ion implantation system with non-tungsten materials and methods of using

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881010A (en) * 1985-10-31 1989-11-14 Harris Semiconductor Patents, Inc. Ion implantation method and apparatus
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
JP4007149B2 (en) * 2002-10-16 2007-11-14 凸版印刷株式会社 Gas barrier container, method for manufacturing the same, and apparatus for manufacturing the same
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US20090166555A1 (en) * 2007-12-28 2009-07-02 Olson Joseph C RF electron source for ionizing gas clusters
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
SG10201509808WA (en) * 2010-11-30 2015-12-30 Entegris Inc Ion implanter system including remote dopant source, and method comprising same
US9064795B2 (en) * 2012-03-30 2015-06-23 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate
US8664622B2 (en) * 2012-04-11 2014-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion beam source for semiconductor ion implantation
US20140021373A1 (en) * 2012-07-23 2014-01-23 Varian Semiconductor Equipment Associates, Inc. Beamline electrode voltage modulation for ion beam glitch recovery
WO2014137872A1 (en) * 2013-03-05 2014-09-12 Advanced Technology Materials, Inc. Ion implantation compositions, systems, and methods
KR102306410B1 (en) * 2013-08-16 2021-09-28 엔테그리스, 아이엔씨. Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Also Published As

Publication number Publication date
JP2019521471A (en) 2019-07-25
TWI765887B (en) 2022-06-01
US20220044908A1 (en) 2022-02-10
TW201802888A (en) 2018-01-16
US20170330726A1 (en) 2017-11-16
JP6730457B2 (en) 2020-07-29
KR20180129937A (en) 2018-12-05
WO2017196934A1 (en) 2017-11-16
CN109196617B (en) 2021-02-12
CN109196617A (en) 2019-01-11
KR102202345B1 (en) 2021-01-12

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