JPS6483147A - Manufacture of chemical sensitivity field effect transistor - Google Patents

Manufacture of chemical sensitivity field effect transistor

Info

Publication number
JPS6483147A
JPS6483147A JP24228387A JP24228387A JPS6483147A JP S6483147 A JPS6483147 A JP S6483147A JP 24228387 A JP24228387 A JP 24228387A JP 24228387 A JP24228387 A JP 24228387A JP S6483147 A JPS6483147 A JP S6483147A
Authority
JP
Japan
Prior art keywords
film
isfet
field effect
effect transistor
permeate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24228387A
Other languages
Japanese (ja)
Inventor
Taiji Osada
Noriaki Ono
Etsuo Shinohara
Fukuko Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP24228387A priority Critical patent/JPS6483147A/en
Publication of JPS6483147A publication Critical patent/JPS6483147A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To obtain a chemical sensitivity field effect transistor (ISFET) having excellent dielectric strength and stability, by a method wherein a hydrophobic organic macromolecular film not allowing a charge such as an ion to permeate and having excellent water resistance is formed in a destructed part of a protection film. CONSTITUTION:The whole surfaces of a source region 2 and a drain region 3 formed by phosphorus diffusion on a P-type silicon substrate 1 processed minutely by anisotropic etching are covered, except lead contact parts 2a and 3a, with a silicon oxide film 4 as an insulation film not allowing an ion to permeate and with a silicon nitride film 5 as a protection film. Then, a lead wire is connected to a source contact part of ISFET, and this ISFET is made to operate as a working electrode, with a platinum used as the opposite electrode, in an electrolytic polymerization solution (e.g. a solution prepared by dissolving a styrene monomer and tetraethylammonium tetrafluoroboron in a mixed solvent of acetonitrile and toluene). Thereby an electrolytically polymerized film 9 is formed in a destructed corner part of the insulation film 4, so as to improve the dielectric strength.
JP24228387A 1987-09-25 1987-09-25 Manufacture of chemical sensitivity field effect transistor Pending JPS6483147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24228387A JPS6483147A (en) 1987-09-25 1987-09-25 Manufacture of chemical sensitivity field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24228387A JPS6483147A (en) 1987-09-25 1987-09-25 Manufacture of chemical sensitivity field effect transistor

Publications (1)

Publication Number Publication Date
JPS6483147A true JPS6483147A (en) 1989-03-28

Family

ID=17086954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24228387A Pending JPS6483147A (en) 1987-09-25 1987-09-25 Manufacture of chemical sensitivity field effect transistor

Country Status (1)

Country Link
JP (1) JPS6483147A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138251A (en) * 1989-10-04 1992-08-11 Olympus Optical Co., Ltd. Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same
WO2005012896A1 (en) * 2003-07-30 2005-02-10 Micronas Gmbh Capacitively controlled field effect transistor gas sensor comprising a hydrophobic layer
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9012874B2 (en) 2010-02-26 2015-04-21 Entegris, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9205392B2 (en) 2010-08-30 2015-12-08 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
US9455147B2 (en) 2005-08-30 2016-09-27 Entegris, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US9938156B2 (en) 2011-10-10 2018-04-10 Entegris, Inc. B2F4 manufacturing process
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US10497569B2 (en) 2009-07-23 2019-12-03 Entegris, Inc. Carbon materials for carbon implantation
US11062906B2 (en) 2013-08-16 2021-07-13 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138251A (en) * 1989-10-04 1992-08-11 Olympus Optical Co., Ltd. Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same
WO2005012896A1 (en) * 2003-07-30 2005-02-10 Micronas Gmbh Capacitively controlled field effect transistor gas sensor comprising a hydrophobic layer
US9455147B2 (en) 2005-08-30 2016-09-27 Entegris, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US10497569B2 (en) 2009-07-23 2019-12-03 Entegris, Inc. Carbon materials for carbon implantation
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9142387B2 (en) 2009-10-27 2015-09-22 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9685304B2 (en) 2009-10-27 2017-06-20 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9012874B2 (en) 2010-02-26 2015-04-21 Entegris, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9171725B2 (en) 2010-02-26 2015-10-27 Entegris, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9754786B2 (en) 2010-02-26 2017-09-05 Entegris, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9205392B2 (en) 2010-08-30 2015-12-08 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
US9764298B2 (en) 2010-08-30 2017-09-19 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
US9938156B2 (en) 2011-10-10 2018-04-10 Entegris, Inc. B2F4 manufacturing process
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US10354877B2 (en) 2012-02-14 2019-07-16 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US11062906B2 (en) 2013-08-16 2021-07-13 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor

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