KR101856921B9 - 이온 주입에 사용하기 위한 패키지된 가스 혼합물 - Google Patents

이온 주입에 사용하기 위한 패키지된 가스 혼합물

Info

Publication number
KR101856921B9
KR101856921B9 KR1020177034081A KR20177034081A KR101856921B9 KR 101856921 B9 KR101856921 B9 KR 101856921B9 KR 1020177034081 A KR1020177034081 A KR 1020177034081A KR 20177034081 A KR20177034081 A KR 20177034081A KR 101856921 B9 KR101856921 B9 KR 101856921B9
Authority
KR
South Korea
Prior art keywords
ion implantation
gas mixture
packaged gas
packaged
implantation
Prior art date
Application number
KR1020177034081A
Other languages
English (en)
Other versions
KR20170134767A (ko
KR101856921B1 (ko
Inventor
로버트 카임
조셉 디 스위니
안쏘니 엠 아빌라
리차드 에스 레이
Original Assignee
엔테그리스, 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=44507609&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101856921(B9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 엔테그리스, 아이엔씨. filed Critical 엔테그리스, 아이엔씨.
Publication of KR20170134767A publication Critical patent/KR20170134767A/ko
Application granted granted Critical
Publication of KR101856921B1 publication Critical patent/KR101856921B1/ko
Publication of KR101856921B9 publication Critical patent/KR101856921B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
KR1020177034081A 2010-02-26 2011-02-26 이온 주입에 사용하기 위한 패키지된 가스 혼합물 KR101856921B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US30842810P 2010-02-26 2010-02-26
US61/308,428 2010-02-26
US39071510P 2010-10-07 2010-10-07
US61/390,715 2010-10-07
KR1020127025087A KR101849416B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127025087A Division KR101849416B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187009974A Division KR101982457B1 (ko) 2010-02-26 2011-02-26 이온 주입에 사용하기 위한 패키지된 가스 혼합물

Publications (3)

Publication Number Publication Date
KR20170134767A KR20170134767A (ko) 2017-12-06
KR101856921B1 KR101856921B1 (ko) 2018-05-10
KR101856921B9 true KR101856921B9 (ko) 2022-11-23

Family

ID=44507609

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020177034088A KR20170132909A (ko) 2010-02-26 2011-02-26 이온 주입 시스템용 가스 공급 장치
KR1020187036969A KR102360243B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템용 가스 공급 장치
KR1020127025087A KR101849416B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치
KR1020187009974A KR101982457B1 (ko) 2010-02-26 2011-02-26 이온 주입에 사용하기 위한 패키지된 가스 혼합물
KR1020177034081A KR101856921B1 (ko) 2010-02-26 2011-02-26 이온 주입에 사용하기 위한 패키지된 가스 혼합물
KR1020177013585A KR20170060163A (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치
KR1020227003688A KR20220021028A (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치

Family Applications Before (4)

Application Number Title Priority Date Filing Date
KR1020177034088A KR20170132909A (ko) 2010-02-26 2011-02-26 이온 주입 시스템용 가스 공급 장치
KR1020187036969A KR102360243B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템용 가스 공급 장치
KR1020127025087A KR101849416B1 (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치
KR1020187009974A KR101982457B1 (ko) 2010-02-26 2011-02-26 이온 주입에 사용하기 위한 패키지된 가스 혼합물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177013585A KR20170060163A (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치
KR1020227003688A KR20220021028A (ko) 2010-02-26 2011-02-26 이온 주입 시스템의 이온 공급원의 수명 및 성능을 개선하기 위한 방법 및 장치

Country Status (9)

Country Link
US (6) US8237134B2 (ko)
EP (2) EP3333881A3 (ko)
JP (6) JP5906196B2 (ko)
KR (7) KR20170132909A (ko)
CN (3) CN107578972A (ko)
MY (1) MY166024A (ko)
SG (4) SG10201506698VA (ko)
TW (5) TWI689467B (ko)
WO (1) WO2011106750A2 (ko)

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TWI674614B (zh) * 2014-10-27 2019-10-11 美商恩特葛瑞斯股份有限公司 離子佈植方法及設備
JP6879663B2 (ja) * 2014-12-25 2021-06-02 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
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KR102194518B1 (ko) * 2016-03-28 2020-12-23 엔테그리스, 아이엔씨. 수소화된 동위원소-풍부한 삼불화 붕소 도펀트 소스 가스 조성물
KR20180132800A (ko) * 2016-04-05 2018-12-12 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업물 내로 프로세싱 종을 주입하는 방법 및 작업물 내로 도펀트를 주입하는 방법, 및 작업물을 프로세싱하기 위한 장치
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US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
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