SG10201406528PA - Ion implantation system and method - Google Patents
Ion implantation system and methodInfo
- Publication number
- SG10201406528PA SG10201406528PA SG10201406528PA SG10201406528PA SG10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA SG 10201406528P A SG10201406528P A SG 10201406528PA
- Authority
- SG
- Singapore
- Prior art keywords
- ion implantation
- implantation system
- dopant gas
- arc chamber
- optimization
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000002019 doping agent Substances 0.000 abstract 3
- 238000005457 optimization Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
ION IMPLANTATION SYSTEM AND An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B F or 2 4 other alternatives to BF . Various arc chamber 3 thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics,detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system. Fig.l -34-
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25509709P | 2009-10-27 | 2009-10-27 | |
US34920210P | 2010-05-27 | 2010-05-27 | |
US35851410P | 2010-06-25 | 2010-06-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201406528PA true SG10201406528PA (en) | 2014-12-30 |
Family
ID=43970653
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201406528PA SG10201406528PA (en) | 2009-10-27 | 2010-10-25 | Ion implantation system and method |
SG10201605310RA SG10201605310RA (en) | 2009-10-27 | 2010-10-25 | Ion implantation system and method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201605310RA SG10201605310RA (en) | 2009-10-27 | 2010-10-25 | Ion implantation system and method |
Country Status (8)
Country | Link |
---|---|
US (3) | US8796131B2 (en) |
EP (2) | EP2494581B1 (en) |
JP (1) | JP5919195B2 (en) |
KR (1) | KR101747473B1 (en) |
CN (2) | CN102668016B (en) |
SG (2) | SG10201406528PA (en) |
TW (2) | TWI496183B (en) |
WO (1) | WO2011056515A2 (en) |
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-
2010
- 2010-10-25 KR KR1020127013712A patent/KR101747473B1/en active IP Right Grant
- 2010-10-25 EP EP10828832.5A patent/EP2494581B1/en active Active
- 2010-10-25 EP EP16164364.8A patent/EP3062330A3/en not_active Withdrawn
- 2010-10-25 JP JP2012536928A patent/JP5919195B2/en active Active
- 2010-10-25 SG SG10201406528PA patent/SG10201406528PA/en unknown
- 2010-10-25 CN CN201080054595.9A patent/CN102668016B/en active Active
- 2010-10-25 SG SG10201605310RA patent/SG10201605310RA/en unknown
- 2010-10-25 WO PCT/US2010/053977 patent/WO2011056515A2/en active Application Filing
- 2010-10-25 US US13/502,855 patent/US8796131B2/en active Active
- 2010-10-25 CN CN201610048444.1A patent/CN105702547B/en active Active
- 2010-10-27 TW TW099136798A patent/TWI496183B/en active
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Also Published As
Publication number | Publication date |
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CN102668016A (en) | 2012-09-12 |
WO2011056515A3 (en) | 2011-08-25 |
CN105702547A (en) | 2016-06-22 |
TWI496183B (en) | 2015-08-11 |
TW201137925A (en) | 2011-11-01 |
US8796131B2 (en) | 2014-08-05 |
JP5919195B2 (en) | 2016-05-18 |
CN105702547B (en) | 2021-10-29 |
EP2494581A2 (en) | 2012-09-05 |
TWI584336B (en) | 2017-05-21 |
JP2013509004A (en) | 2013-03-07 |
US20120252195A1 (en) | 2012-10-04 |
EP2494581A4 (en) | 2015-03-18 |
US20140342538A1 (en) | 2014-11-20 |
CN102668016B (en) | 2016-02-24 |
SG10201605310RA (en) | 2016-08-30 |
KR20120106947A (en) | 2012-09-27 |
WO2011056515A2 (en) | 2011-05-12 |
EP2494581B1 (en) | 2016-05-18 |
US9111860B2 (en) | 2015-08-18 |
KR101747473B1 (en) | 2017-06-27 |
TW201604915A (en) | 2016-02-01 |
EP3062330A2 (en) | 2016-08-31 |
US20150357152A1 (en) | 2015-12-10 |
EP3062330A3 (en) | 2016-11-16 |
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