SG10201910998SA - Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system - Google Patents

Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Info

Publication number
SG10201910998SA
SG10201910998SA SG10201910998SA SG10201910998SA SG10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA SG 10201910998S A SG10201910998S A SG 10201910998SA
Authority
SG
Singapore
Prior art keywords
performance
implantation system
ion
ion implantation
enhanced lifetime
Prior art date
Application number
SG10201910998SA
Inventor
Robert Kaim
Joseph Sweeney
Anthony Avila
Richard Ray
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=44507609&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10201910998S(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201910998SA publication Critical patent/SG10201910998SA/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
SG10201910998SA 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system SG10201910998SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30842810P 2010-02-26 2010-02-26
US39071510P 2010-10-07 2010-10-07

Publications (1)

Publication Number Publication Date
SG10201910998SA true SG10201910998SA (en) 2020-01-30

Family

ID=44507609

Family Applications (4)

Application Number Title Priority Date Filing Date
SG2012059093A SG183248A1 (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG10201506698VA SG10201506698VA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG10201609427WA SG10201609427WA (en) 2010-02-26 2011-02-26 Method And Apparatus For Enhanced Lifetime And Performance Of Ion Source In An Ion Implantation System
SG10201910998SA SG10201910998SA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Family Applications Before (3)

Application Number Title Priority Date Filing Date
SG2012059093A SG183248A1 (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG10201506698VA SG10201506698VA (en) 2010-02-26 2011-02-26 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
SG10201609427WA SG10201609427WA (en) 2010-02-26 2011-02-26 Method And Apparatus For Enhanced Lifetime And Performance Of Ion Source In An Ion Implantation System

Country Status (9)

Country Link
US (6) US8237134B2 (en)
EP (2) EP2539923A4 (en)
JP (6) JP5906196B2 (en)
KR (7) KR101856921B1 (en)
CN (3) CN107578972A (en)
MY (1) MY166024A (en)
SG (4) SG183248A1 (en)
TW (5) TWI386983B (en)
WO (1) WO2011106750A2 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (en) * 2010-02-26 2013-02-21 Advanced Tech Materials Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
KR20160018874A (en) * 2012-08-28 2016-02-17 프랙스에어 테크놀로지, 인코포레이티드 Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
US9552990B2 (en) * 2012-12-21 2017-01-24 Praxair Technology, Inc. Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation
US9831063B2 (en) * 2013-03-05 2017-11-28 Entegris, Inc. Ion implantation compositions, systems, and methods
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
JP6104461B2 (en) * 2013-05-02 2017-03-29 プラクスエア・テクノロジー・インコーポレイテッド Sources and methods for concentrated selenium ion implantation
EP3000123A4 (en) * 2013-05-21 2016-12-28 Entegris Inc Enriched silicon precursor compositions and apparatus and processes for utilizing same
CN103413746A (en) * 2013-06-25 2013-11-27 上海华力微电子有限公司 Germanium implanting method for improving service cycle of ion implanter
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
EP3033765A4 (en) * 2013-08-16 2017-08-16 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP6238689B2 (en) * 2013-11-13 2017-11-29 住友重機械イオンテクノロジー株式会社 Ion generating apparatus and ion generating method
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
JP6328023B2 (en) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ Ion beam equipment
WO2016069516A1 (en) * 2014-10-27 2016-05-06 Entegris, Inc. Ion implantation processes and apparatus
JP6879663B2 (en) * 2014-12-25 2021-06-02 株式会社日立ハイテクサイエンス Charged particle beam device
GB201514895D0 (en) * 2015-08-21 2015-10-07 Finlay Alan P J Energy conversion system and reaction apparatus
SG10201910772PA (en) * 2016-03-28 2020-01-30 Entegris Inc Hydrogenated isotopically enriched boron trifluoride dopant source gas composition
KR20180132800A (en) * 2016-04-05 2018-12-12 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. A method for injecting a processing species into a workpiece, a method for injecting a dopant into a workpiece, and an apparatus for processing a workpiece
US10170286B2 (en) * 2016-09-30 2019-01-01 Axcelis Technologies, Inc. In-situ cleaning using hydrogen peroxide as co-gas to primary dopant or purge gas for minimizing carbon deposits in an ion source
US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
US11098402B2 (en) 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN112105757A (en) * 2018-05-17 2020-12-18 恩特格里斯公司 Germanium tetrafluoride and hydrogen mixture for ion implantation systems
CN109300778B (en) * 2018-09-30 2021-10-15 上海华力集成电路制造有限公司 Ion implantation method
US11049728B2 (en) 2018-10-31 2021-06-29 Entegris, Inc. Boron-doped amorphous carbon hard mask and related methods
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
SG11202105497PA (en) * 2018-12-15 2021-06-29 Entegris Inc Fluorine ion implantation system with non-tungsten materials and methods of using
CN109738835B (en) * 2018-12-31 2021-05-28 聚光科技(杭州)股份有限公司 Working method of ion source filament
WO2022072831A1 (en) * 2020-10-02 2022-04-07 Entegris, Inc. Methods and systems useful for producing aluminum ions
CN117038423A (en) * 2023-10-09 2023-11-10 上海凡森璞瑞新材料股份有限公司 Ion implantation system, method and dopant species comprising germanium tetrafluoride gas mixtures

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US4331647A (en) 1980-03-03 1982-05-25 Goldenberg Milton David Tumor localization and therapy with labeled antibody fragments specific to tumor-associated markers
US4348376A (en) 1980-03-03 1982-09-07 Goldenberg Milton David Tumor localization and therapy with labeled anti-CEA antibody
JPS588071A (en) 1981-07-08 1983-01-18 Nippon Iyakuhin Kogyo Kk Preparation of 2-benzothiazolinone-3-acetic acid amide derivative or its pharmacologically active salt
US4459427A (en) 1981-10-31 1984-07-10 The British Petroleum Company P.L.C. Process for the conversion of an alkane to a mixture of an alcohol and a ketone
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
DE3584105D1 (en) 1984-03-16 1991-10-24 Hitachi Ltd ION SOURCE.
JPS60221566A (en) 1984-04-18 1985-11-06 Agency Of Ind Science & Technol Thin film forming device
US4722978A (en) 1985-08-30 1988-02-02 The B. F. Goodrich Company Allyl terminated macromolecular monomers of polyethers
JPS6295820A (en) * 1985-10-23 1987-05-02 Hitachi Ltd Ion implanting method
US4680358A (en) 1985-11-08 1987-07-14 The B F Goodrich Company Styryl terminated macromolecular monomers of polyethers
JPS6315228A (en) 1986-07-08 1988-01-22 Asahi Glass Co Ltd Electrochromic element
JPH0772167B2 (en) 1986-09-04 1995-08-02 サントリー株式会社 Process for producing 4-amino-3-hydroxybutyric acid derivative
US4851255A (en) 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
JPS6483147A (en) 1987-09-25 1989-03-28 Olympus Optical Co Manufacture of chemical sensitivity field effect transistor
JPH01225117A (en) 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> Method and device for manufacturing semiconductor device
JP2699549B2 (en) 1988-06-03 1998-01-19 日産化学工業株式会社 Method for producing 4-benzoyl-5-hydroxypyrazoles
JP2533639B2 (en) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Method for producing amorphous silicon doped with P-type carbon
JPH03165443A (en) * 1989-11-24 1991-07-17 Shimadzu Corp Ion implanting method
US5442191A (en) 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
US5144409A (en) 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
JPH05254808A (en) 1992-03-10 1993-10-05 Semiconductor Energy Lab Co Ltd Preparation of boron nitride
JPH0680681A (en) 1992-07-15 1994-03-22 Nippon Kayaku Co Ltd Phosphonium compound and electrophotographic toner using the same
SE470493B (en) 1992-10-19 1994-06-06 Alfa Laval Separation Ab Centrifugal separator with elongated carrying elements arranged in a dispensing chamber
US5395783A (en) 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
JP3259400B2 (en) 1993-02-18 2002-02-25 ソニー株式会社 Semiconductor device and solid-state imaging device
US5306922A (en) * 1993-03-16 1994-04-26 Genus, Inc. Production of high beam currents at low energies for use in ion implantation systems
WO1995000977A1 (en) 1993-06-23 1995-01-05 Toray Industries, Inc. Cell electrode, secondary cell using the cell electrode, and method for manufacturing the cell electrode
JPH0765761A (en) * 1993-08-30 1995-03-10 Hitachi Ltd Thin film forming method and ion implanting method
JPH0790201A (en) 1993-09-22 1995-04-04 Hokko Chem Ind Co Ltd Underwater antifouling coating compound
JPH08190886A (en) * 1995-01-10 1996-07-23 Mitsubishi Electric Corp Ion implanting device, ion implanting method, and semiconductor device
JP3502185B2 (en) * 1995-04-12 2004-03-02 松下電器産業株式会社 Ion implantation method
DE19537759C1 (en) 1995-10-10 1996-11-28 Siemens Ag Implantation of dopant into semiconductor material
GB2344213B (en) * 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved field control
US5977552A (en) 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
US5993766A (en) * 1996-05-20 1999-11-30 Advanced Technology Materials, Inc. Gas source and dispensing system
GB2314202B (en) * 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
GB2317265A (en) 1996-09-13 1998-03-18 Aea Technology Plc Radio frequency plasma generator
JPH10251592A (en) 1997-03-07 1998-09-22 Kansai Paint Co Ltd Coating composition and application thereof
US6086837A (en) 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US5943594A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US5962858A (en) 1997-07-10 1999-10-05 Eaton Corporation Method of implanting low doses of ions into a substrate
JPH1154451A (en) * 1997-08-07 1999-02-26 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US6096467A (en) 1997-11-19 2000-08-01 Mita Industrial Co., Ltd. Positive charging color toner
JP3099819B2 (en) * 1997-11-28 2000-10-16 セイコーエプソン株式会社 Method for manufacturing semiconductor device
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6070576A (en) * 1998-06-02 2000-06-06 Advanced Technology Materials, Inc. Adsorbent-based storage and dispensing system
US6215125B1 (en) 1998-09-16 2001-04-10 International Business Machines Corporation Method to operate GEF4 gas in hot cathode discharge ion sources
US6614082B1 (en) 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6146601A (en) * 1999-10-28 2000-11-14 Eagle-Picher Industries, Inc. Enrichment of silicon or germanium isotopes
US6756600B2 (en) 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6376664B1 (en) 1999-03-17 2002-04-23 The Ohio State University Cyclic bis-benzimidazole ligands and metal complexes thereof
JP3401561B2 (en) 1999-03-29 2003-04-28 独立行政法人物質・材料研究機構 Method for producing high purity isotope silicon crystal film
US6799603B1 (en) * 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
US6420304B1 (en) 2000-04-20 2002-07-16 China Petrochemical Development Corporation Polymer-supported carbonylation catalyst and its use
JP4634569B2 (en) 2000-05-25 2011-02-16 東芝モバイルディスプレイ株式会社 Ion implantation apparatus and thin film semiconductor device
JP2004501987A (en) 2000-06-19 2004-01-22 キンバリー　クラーク　ワールドワイド　インコーポレイテッド Novel photoinitiator and its use
WO2002005315A2 (en) 2000-07-10 2002-01-17 Epion Corporation System and method for improving thin films by gas cluster ion be am processing
KR20000072651A (en) 2000-08-08 2000-12-05 이관호 Novel plant species ssamchoo and breeding method thereof
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US20020058385A1 (en) 2000-10-26 2002-05-16 Taiji Noda Semiconductor device and method for manufacturing the same
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP3824058B2 (en) 2001-05-23 2006-09-20 独立行政法人産業技術総合研究所 Carborane super cluster and manufacturing method thereof
US7119400B2 (en) 2001-07-05 2006-10-10 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
JP2003053153A (en) 2001-08-20 2003-02-25 Japan Atom Energy Res Inst High efficient separation and concentration method of silicone isotope with laser
US8037717B2 (en) * 2001-10-26 2011-10-18 Corning Incorporated Methods and apparatus for pulsed doping or drying a soot preform
GB0128913D0 (en) 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
AU2002364611A1 (en) 2001-12-31 2003-07-24 The Ohio State University Research Foundation Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
GB2417365B (en) 2002-03-28 2006-05-17 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
KR100797138B1 (en) 2002-06-26 2008-01-22 세미이큅, 인코포레이티드 Complementary metal oxide semiconductor device, and method for forming a metal oxide semiconductor device and a complementary metal oxide semiconductor device
US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
JP2004039735A (en) 2002-07-01 2004-02-05 Fujitsu Ltd Semiconductor substrate and its manufacturing method
JP2004079930A (en) * 2002-08-22 2004-03-11 Toshiba Corp Semiconductor material, its manufacturing method, and soi type semiconductor substrate
KR100464935B1 (en) 2002-09-17 2005-01-05 주식회사 하이닉스반도체 Method of fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by Boron-fluoride compound doping
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
US7410890B2 (en) * 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
AU2003299614A1 (en) 2002-12-12 2004-06-30 Epion Corporation Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
US7296532B2 (en) * 2002-12-18 2007-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Bypass gas feed system and method to improve reactant gas flow and film deposition
US6780896B2 (en) 2002-12-20 2004-08-24 Kimberly-Clark Worldwide, Inc. Stabilized photoinitiators and applications thereof
US6936505B2 (en) 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
KR100541050B1 (en) * 2003-07-22 2006-01-11 삼성전자주식회사 Gas supply apparatus and semiconductor device manufacturing equipment using the same
JP4619951B2 (en) 2003-08-25 2011-01-26 パナソニック株式会社 Method for forming impurity introduction layer
JP2005093518A (en) 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd Control method and apparatus of dopant introduction
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
EP1695369A4 (en) 2003-12-12 2009-11-04 Semequip Inc Method and apparatus for extending equipment uptime in ion implantation
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7015108B2 (en) 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
US7494888B2 (en) 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US7247546B2 (en) 2004-08-05 2007-07-24 International Business Machines Corporation Method of forming strained silicon materials with improved thermal conductivity
US7397048B2 (en) * 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7404845B2 (en) 2004-09-23 2008-07-29 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
US7563308B2 (en) * 2004-09-23 2009-07-21 Air Products And Chemicals, Inc. Ionic liquid based mixtures for gas storage and delivery
WO2006047061A2 (en) * 2004-10-22 2006-05-04 Semequip Inc. Use of defined compounds for the manufacture of a medicament for preventing/ treating diseases resulting from somatic mutation
US7955797B2 (en) * 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
US20060104851A1 (en) 2004-11-12 2006-05-18 Tillotson Brian J Isotopic densification of propellant
US7687025B2 (en) 2004-11-12 2010-03-30 The Boeing Company Isotopic lightening
EP1787321A4 (en) 2004-12-03 2008-12-03 Tel Epion Inc Formation of ultra-shallow junctions by gas-cluster ion irridation
KR20060077942A (en) * 2004-12-30 2006-07-05 매그나칩 반도체 유한회사 Methods for using implanter
WO2006095086A2 (en) 2005-03-07 2006-09-14 Laurence Faure Traceability of cellular cycle anomalies targeting oncology and neurodegeneration
US20060292762A1 (en) * 2005-06-22 2006-12-28 Epion Corporation Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiation
US20100224264A1 (en) 2005-06-22 2010-09-09 Advanced Technology Materials, Inc. Apparatus and process for integrated gas blending
US7491947B2 (en) 2005-08-17 2009-02-17 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of indirectly heated cathode ion source
US20100112795A1 (en) 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
US20080220596A1 (en) * 2005-08-30 2008-09-11 Advanced Technology Materials, Inc. Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source
EP1933992B1 (en) 2005-08-30 2014-09-24 Advanced Technology Materials, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
DE102005054218B4 (en) 2005-11-14 2011-06-09 Infineon Technologies Ag Method for producing a semiconductor element and semiconductor element
WO2007070321A2 (en) 2005-12-09 2007-06-21 Semequip Inc. System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
WO2007134183A2 (en) 2006-05-13 2007-11-22 Advanced Technology Materials, Inc. Chemical reagent delivery system utilizing ionic liquid storage medium
US8853065B2 (en) 2006-05-16 2014-10-07 Cree, Inc. Methods for fabricating semiconductor devices having reduced implant contamination
US7989843B2 (en) 2006-08-25 2011-08-02 National Institute For Materials Science Semiconductor and method for producing the same
WO2008070453A2 (en) 2006-11-22 2008-06-12 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7887634B2 (en) 2006-12-22 2011-02-15 Infineon Technologies Ag Method of producing a semiconductor element and semiconductor element
US7586109B2 (en) * 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7833886B2 (en) 2007-05-14 2010-11-16 Infineon Technologies Ag Method of producing a semiconductor element in a substrate
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN103922359A (en) 2007-11-02 2014-07-16 塞门库普公司 Methods Of Preparing Clusterboron
KR20110005683A (en) * 2008-02-11 2011-01-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ion source cleaning in semiconductor processing systems
US8252115B2 (en) * 2008-04-02 2012-08-28 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane
EP2283509A1 (en) 2008-05-30 2011-02-16 Axcelis Technologies, Inc. Control of particles on semiconductor wafers when implanting boron hydrides
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US8809800B2 (en) 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US7973293B2 (en) 2009-01-09 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Implantation quality improvement by xenon/hydrogen dilution gas
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
EP2293114B1 (en) * 2009-09-02 2017-09-06 3833364 Canada Inc. (operating as DETEC) Neutron energy spectrometer
US9627180B2 (en) 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
US8237136B2 (en) 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
JP5919195B2 (en) 2009-10-27 2016-05-18 インテグリス・インコーポレーテッド Ion implantation system and method
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US20110143527A1 (en) 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (en) * 2010-02-26 2013-02-21 Advanced Tech Materials Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
JP5714831B2 (en) 2010-03-18 2015-05-07 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants

Also Published As

Publication number Publication date
US8785889B2 (en) 2014-07-22
TWI689467B (en) 2020-04-01
JP5906196B2 (en) 2016-04-20
JP2016129153A (en) 2016-07-14
JP6258384B2 (en) 2018-01-10
JP2015122534A (en) 2015-07-02
US20120142174A1 (en) 2012-06-07
EP3333881A3 (en) 2018-07-25
KR20220021028A (en) 2022-02-21
US20170330756A1 (en) 2017-11-16
SG10201609427WA (en) 2017-01-27
SG10201506698VA (en) 2015-09-29
KR20170060163A (en) 2017-05-31
KR20170132909A (en) 2017-12-04
JP2021044553A (en) 2021-03-18
TW201201254A (en) 2012-01-01
KR102360243B1 (en) 2022-02-09
CN102782811A (en) 2012-11-14
SG183248A1 (en) 2012-09-27
TWI466179B (en) 2014-12-21
JP2013521596A (en) 2013-06-10
JP2018073841A (en) 2018-05-10
KR101856921B9 (en) 2022-11-23
KR20170134767A (en) 2017-12-06
TW201800342A (en) 2018-01-01
KR101849416B1 (en) 2018-04-16
US20150228486A1 (en) 2015-08-13
US20140326896A1 (en) 2014-11-06
US20120313047A1 (en) 2012-12-13
TW201500285A (en) 2015-01-01
CN107578972A (en) 2018-01-12
US9754786B2 (en) 2017-09-05
US9012874B2 (en) 2015-04-21
TWI582836B (en) 2017-05-11
EP3333881A2 (en) 2018-06-13
WO2011106750A2 (en) 2011-09-01
TWI386983B (en) 2013-02-21
WO2011106750A3 (en) 2012-04-05
US20130206788A1 (en) 2013-08-15
KR20190000376A (en) 2019-01-02
KR101982457B1 (en) 2019-05-24
TW201334039A (en) 2013-08-16
CN107393795A (en) 2017-11-24
KR20180039189A (en) 2018-04-17
KR101856921B1 (en) 2018-05-10
JP2017203216A (en) 2017-11-16
TWI585042B (en) 2017-06-01
EP2539923A2 (en) 2013-01-02
US8237134B2 (en) 2012-08-07
KR101849416B9 (en) 2022-11-23
MY166024A (en) 2018-05-21
US8399865B2 (en) 2013-03-19
EP2539923A4 (en) 2013-11-06
KR20120127512A (en) 2012-11-21
TW201508824A (en) 2015-03-01

Similar Documents

Publication Publication Date Title
SG10201506698VA (en) Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
GB2485308B (en) System and method for replacing an ion source in a mass spectrometer
GB2491526B (en) Method and apparatus for manufacturing an implant
GB2574524B (en) Method and system for locating an acoustic source
SG10201605310RA (en) Ion implantation system and method
IL220944A0 (en) Method and apparatus for interconnecting distributed power sources
GB2494563B (en) Apparatus and methods for ion mobility spectrometry
HK1198511A1 (en) Pelvic implant system and method
IL227709A0 (en) Systems apparatus and methods for implementing implants
HUE058229T2 (en) Apparatus and method for rendering audio objects
SG10201507319XA (en) Method for extending lifetime of an ion source
EP2560186A4 (en) Ion beam apparatus and ion-beam processing method
EP2659680A4 (en) Method and apparatus for providing mono-vision in multi-view system
HK1168185A1 (en) Method and system for dividing an image
SG10201509808WA (en) Ion implanter system including remote dopant source, and method comprising same
ZA201207551B (en) Apparatus and method for stabilizing an electrical power import
GB201002645D0 (en) Method and apparatus for ion beam polishing
EP2786396A4 (en) Ion implant apparatus and a method of implanting ions
IL221419A0 (en) Lens inserter apparatus and method
GB2483304B (en) An apparatus and method for controlling power
ZA201403031B (en) Apparatus and method for an anti-spin system
IL221225A0 (en) Lens holder apparatus and system and method
EP2770598A4 (en) Integration system and method for regulating and operating in parallel different high-voltage sources
EP2787447A4 (en) Method and system for providing an nui
EP2734148A4 (en) Pelvic implant system and method