CN103413746A - Germanium implanting method for improving service cycle of ion implanter - Google Patents
Germanium implanting method for improving service cycle of ion implanter Download PDFInfo
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- CN103413746A CN103413746A CN2013102568170A CN201310256817A CN103413746A CN 103413746 A CN103413746 A CN 103413746A CN 2013102568170 A CN2013102568170 A CN 2013102568170A CN 201310256817 A CN201310256817 A CN 201310256817A CN 103413746 A CN103413746 A CN 103413746A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 32
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 49
- 229910006160 GeF4 Inorganic materials 0.000 claims abstract description 24
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 11
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000000605 extraction Methods 0.000 claims description 30
- 238000002513 implantation Methods 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 23
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 34
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 244000144992 flock Species 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 231100001261 hazardous Toxicity 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229960001948 caffeine Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- -1 germanium ions Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RYYVLZVUVIJVGH-UHFFFAOYSA-N trimethylxanthine Natural products CN1C(=O)N(C)C(=O)C2=C1N=CN2C RYYVLZVUVIJVGH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
The invention discloses a germanium implanting method for improving a service cycle of an ion implanter. The germanium implanting method comprises the steps that: a wafer is put in an ion implanting chamber, and the chamber is vacuumized; GeF4 and SiH4 gases are introduced into the ion implanting chamber; the GeF4 and SiH4 gases are subjected to decomposition, and decomposed Si +, free F and free H are discharged out of the chamber; decomposed Ge+ in the chamber is implanted into the wafer; the free F and the free H react to produce an HF gas, and the HF gas is extracted out of the chamber; and the decomposed Si + and Ge+ enter a magnetic field of a leading-out pole, the Si + is excluded since the Si+ cannot pass the magnetic field of the leading-out pole, and the Ge+ is implanted into the wafer after being deflected by the magnetic field. The method of the invention improves the traditional germanium implanting method, avoids flocks formed when ions are implanted into the chamber, reduces the corrosion of the chamber, reduces the process hazardous, and improves the service cycle of the ion implanter after the germanium is implanted into the process.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a germanium implantation method for improving the service cycle of an ion implanter.
Background
With the development of semiconductor manufacturing technology, the requirements for each process in a semiconductor process are higher and higher. The implantation process is one of the important processes in the semiconductor process, and the high quality of the implantation process directly affects the performance of the semiconductor device. In the implantation process, the germanium implantation process is a common ion implantation process, such as germanium implantation to an ultra-shallow junction, and the quality of the germanium implantation directly affects the quality of the performance of the ultra-shallow junction.
Referring to fig. 1, fig. 1 is a flow chart illustrating a conventional germanium implantation process, which generally includes:
step S11: putting the wafer into an ion implantation chamber, and vacuumizing the chamber;
step S12: introducing a germanium source into the ion implantation chamber;
step S13: germanium ions decomposed in the chamber are implanted into the wafer.
In the germanium implantation process, the germanium source is generally GeF4Since the main element of the ion implantation chamber contains tungsten (W), GeF is used in the implantation process4F ions are generated by decomposition, and these F ions easily react with W to form WF6Gas, w(s) +6f (g) =>WF6(g) And WF6Decomposition of gas into W, WF6(g)+Heat=>W（s）+3F2(g) The W is adhered to the cavity to form irregular debris, so that the uniformity of the beam flow is influenced, and the ion injection machine is required to be stopped for cleaning and maintenance before being normally used.
At present, the method for overcoming the problems is in GeF4Adding H2In an ion implantation chamber, GeF4Decomposing Ge ions and F ions, F ions and H2HF gas is generated by the reaction, so that the reaction of F ions with W is avoided, and W(s) + F (g) + H (g) =>W(s) +3HF (g), and then HF gas is pumped out by a vacuum pump and ion-implanted into the chamber. However, as is well known, H2Is inflammable and explosive gas, and decomposed electrons are filled in the whole cavity, so that explosion is easily caused, and great danger is brought to the whole process.
Disclosure of Invention
In order to overcome the above problems, the present invention aims to improve the conventional germanium implantation method, avoid the formation of debris on the ion implantation chamber, reduce the process risk, and improve the service life of the ion implanter after the germanium implantation process.
The invention provides a germanium implantation method for improving the service cycle of an ion implanter, which comprises the following steps:
step S01: putting a wafer into the ion implantation chamber, and vacuumizing the chamber;
step S02: introducing GeF into the ion implantation chamber4And SiH4A gas;
step S03: the electron beam in the chamber excites the GeF4And SiH4Gas generation decomposition, decomposed Si+Free F and free H are discharged from the chamber;
step S04: ge decomposed in the chamber+Is injected into theIn the wafer;
wherein,
the free F and free H react to form HF gas, which is pumped out of the chamber;
si decomposed in the chamber+And Ge+The magnetic field entering the extraction pole is accelerated to obtain Si+Cannot be excluded by said magnetic field, said Ge+And injecting the wafer after the wafer is deflected by the magnetic field.
Preferably, SiH4And GeF4The flow ratio of (A) is not less than 1: 1.
Preferably, SiH4The flow rate of (2) is more than zero and less than or equal to 3 sccm.
Preferably, the GeF4The flow rate of (2) is more than zero and less than or equal to 3 sccm.
Preferably, the extraction pole magnetic field is a 90 degree magnetic field.
Preferably, the Ge is+And the crystal is deflected by 90 degrees through the magnetic field of the extraction pole and is vertically injected into the wafer.
Preferably, in the step S02, the free F and free H and HF gases are pumped out of the chamber by a vacuum pump.
Preferably, the ion implanter adopts the voltage of 1KV to 60KV and the vacuum degree of 10 KV-7Pa-10-6Pa。
The germanium implantation method for improving the service cycle of the ion implanter utilizes SiH by improving the traditional germanium implantation method4Substitute for H2Adding SiH4And GeF4Mixed due to SiH4And GeF4Collision decomposition of Ge in ion implantation chamber+And Si+And free F and H, F and H react to form HF gas, to avoid the reaction of F ion with W, W(s) + F (g) + H (g) =>W(s) +3hf (g); thus, avoidThe burrs are formed on the ion injection cavity to influence the uniformity of the beam current, so that the corrosion to the cavity is reduced, and the process risk degree is greatly reduced; in addition, Ge+And Si+The silicon is deflected after being accelerated by an extraction pole magnetic field, the molecular weight of the Si is 40, the molecular weight of the Ge is 72, and the difference between the molecular weight of the Si and the molecular weight of the Ge is larger, so that the Si is accelerated by the extraction pole magnetic field+Acceleration and deflection angle are such that they cannot be evacuated out of the chamber through the extraction electrode, while Ge+The acceleration and deflection angle of the device enable the device to enter the wafer through the extraction electrode, thereby ensuring the element purity of the subsequent germanium implantation.
Drawings
FIG. 1 is a schematic flow diagram of a conventional germanium implantation process
FIG. 2 is a schematic structural view of an ion implantation chamber according to a preferred embodiment of the present invention
FIG. 3 is a flowchart illustrating a germanium implantation method for increasing the lifetime of an ion implanter in accordance with a preferred embodiment of the present invention
FIG. 4 is a schematic diagram of the magnetic field acceleration of the extraction pole according to the above embodiment of the present invention
Detailed Description
Embodiments that embody features and advantages of the invention are described in detail in the description that follows. It is understood that the invention is capable of modification in various forms and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
The method for implanting germanium to improve the lifetime of an ion implanter according to the present invention will be described in further detail with reference to fig. 2 and 3. It is to be noted that the drawings are designed in a simplified form and to use non-precise proportions, and are provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an ion implantation chamber according to a preferred embodiment of the present invention.
The ion implantation chamber 100 of the present embodiment includes:
a stage 101 at the bottom of the chamber 100 for placing a wafer;
an extraction pole 102 located above the worktable 101 for generating a magnetic field to accelerate and deflect ions;
the discharge port 103 on the cavity above the extraction electrode 102 is connected with a vacuum pump and is used for extracting free elements and impurities in the cavity;
a gas inlet 104 at the top of the chamber for the input of gas.
The ion implantation chamber used in the present invention may be any chamber capable of performing ion implantation, and the present invention does not limit the structure of the ion implantation chamber.
Referring to fig. 3, fig. 3 is a schematic flow chart illustrating a germanium implantation method for increasing a lifetime of an ion implanter according to a preferred embodiment of the invention.
The invention relates to a germanium implantation method for improving the service cycle of an ion implanter, which comprises the following steps:
step S01: putting the wafer into an ion implantation chamber, and vacuumizing the chamber;
in this embodiment, the vacuum degree of the chamber may be 10-7Pa-10-6Pa, preferably 10-6Pa, the voltage adopted by the ion implanter is 1KV-60KV, preferably 30 KV.
Step S02: introducing GeF into the ion implantation chamber4And SiH4A gas;
specifically, in this embodiment, SiH may be installed on the ion implanter4Gas negative pressure steel cylinder and GeF4Gas negative pressure cylinder, SiH4Gas and GeF4Gas is fed into the ion implantation chamber through gas lines 1 and 2, respectively. Wherein, the negative pressure steel cylinder is adopted to avoid gas leakage.
Step S03: electron beam excitation GeF in cavity4And SiH4Gas generation decomposition, decomposed Si+Free F and free H are discharged from the chamber;
step S04: decomposed Ge in the chamber+Injecting the silicon wafer into a wafer;
wherein,
the free F and the free H react to generate HF gas, and the HF gas is pumped out of the chamber;
si decomposed in the chamber+And Ge+Enters the magnetic field of the extraction pole, and after being accelerated, Si+Cannot be excluded by the extraction electrode, Ge+The wafer is deflected by a magnetic field and then is injected into the wafer;
specifically, in the present embodiment, in the ion implantation chamber, under a vacuum condition, an electron gun may first generate an electron beam, and then the electron beam excites the GeF entering the chamber4And SiH4Decomposition of gas, SiH4Gas decomposition to Si+And free H, GeF4Gas decomposition to yield Ge+And free F, wherein free H and free F readily react and form HF gas, as in the formula W(s) + F (g) + H (g) =>W(s) +3hf (g) so that no excess free F reacts with W of the chamber, thereby avoiding corrosion of the chamber W; also, in this embodiment, the generated HF gas, the remaining free H and the free F can be pumped out of the chamber using a vacuum pump, thereby eliminating contamination of the germanium implant, since the HF gas, the remaining free H and the free F are not charged and cannot enter the introductionThe pole-emitting magnetic field is small in molecular mass, and the three magnetic fields are easily pumped out of the cavity by the vacuum pump.
In addition, in this embodiment, a 90-degree magnetic field may be applied to the extraction electrode, please refer to fig. 4, where fig. 4 is a schematic diagram illustrating magnetic field acceleration of the extraction electrode according to the above embodiment of the present invention, for Si in the ion implantation chamber+And Ge+The silicon-germanium-+The acceleration and the deflection angle of the silicon wafer enable the silicon wafer to enter the wafer through the extraction electrode 405, so that Si can be easily removed, Ge is reserved, and the purity of implanted elements implanted by the germanium is guaranteed; meanwhile, in the embodiment, the magnetic field of 90 degrees is adopted, so that Ge is adopted+After passing through the magnetic field of the extraction pole 405, the wafer is deflected by 90 degrees and vertically implanted into the wafer 404. As shown in FIG. 4, 401 is an ion source, 402 is Si+The motion track under the action of a magnetic field is 403 Ge+The motion track under the action of magnetic field, Si under the action of magnetic field+After deflection by the magnetic field, Ge cannot pass through the extraction electrode 405+A 90 degree deflection occurs under the magnetic field through the extraction pole 405 and vertically implants into the wafer 404.
Here, it should be noted that each parameter of the extraction pole magnetic field is set to satisfy Ge+Can pass through the magnetic field of the extraction pole, and other ions can not pass through the magnetic field of the extraction pole according to the requirement of Ge+The relationship between the molecular weight, the acceleration and the deflection angle of the magnetic field and the magnetic field strength and the magnetic field direction, so as to obtain parameters such as the acceleration voltage required by the magnetic field of the extraction pole, for example, the acceleration voltage can be from several KeV to several hundred KeV or even several MeV according to different injection depths.
In this example, SiH4Gas and GeF4The flow ratio of the gas is greater than or equal to 1:1, preferably SiH4Gas and GeF4The gas flow ratio is 1:1, which ensures free H andf reacts just and no excess F reacts with W in the chamber if SiH4Gas and GeF4The ratio of gases being greater than 1:1, i.e. SiH4Gas ratio GeF4The gas content is high, then F can be consumed by H and the remaining H and Si ions can be accelerated out of the chamber by the extraction electrode. In this example, SiH4The flow of the gas is more than zero and less than or equal to 3 sccm; GeF4The flow of the gas is more than zero and less than or equal to 3 sccm; preferably, SiH4The flow rate of the gas was 3sccm, GeF4The flow rate of the gas was 3 sccm.
It should be noted that, in the above whole process, the pressure and the voltage applied to the ion implanter are not changed, for example, the pressure is kept at 10-6Pa, and the voltage is kept at 30 KV.
The germanium implantation method for improving the service cycle of the ion implanter utilizes SiH by improving the traditional germanium implantation method4Substitute for H2Adding SiH4And GeF4Mixed due to SiH4And GeF4Collision decomposition of Ge in ion implantation chamber+And Si+And free F and H, F and H react to form HF gas, to avoid the reaction of F ion with W, W(s) + F (g) + H (g) =>W(s) +3hf (g); therefore, the influence of the flock substance formed on the ion injection cavity on the uniformity of the beam current is avoided, the corrosion to the cavity is reduced, and the process risk degree is greatly reduced; in addition, Ge+And Si+The silicon is deflected after being accelerated by an extraction pole magnetic field, the molecular weight of the Si is 40, the molecular weight of the Ge is 72, and the difference between the molecular weight of the Si and the molecular weight of the Ge is larger, so that the Si is accelerated by the extraction pole magnetic field+Acceleration and deflection angle are such that they cannot be rejected by the extraction pole, while Ge+The acceleration and deflection angle of the device enable the device to enter the wafer through the extraction electrode, thereby ensuring the element purity of the subsequent germanium implantation.
The above description is only an embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (8)
1. A germanium implantation method for increasing a lifetime of an ion implanter, comprising:
step S01: putting a wafer into an ion implantation chamber, and vacuumizing the chamber;
step S02: introducing GeF into the ion implantation chamber4And SiH4A gas;
step S03: the electron beam in the chamber excites the GeF4And SiH4Gas generation decomposition, decomposed Si+Free F and free H are discharged from the chamber;
step S04: ge decomposed in the chamber+Implanting into the wafer;
wherein,
the free F and free H react to form HF gas, which is pumped out of the chamber;
si decomposed in the chamber+And Ge+The magnetic field of the extraction pole entering the chamber is accelerated to obtain Si+Cannot be excluded by said magnetic field, said Ge+And injecting the wafer after the wafer is deflected by the magnetic field.
2. The method of claim 1, wherein SiH is4And GeF4The flow ratio of (A) is not less than 1: 1.
3. The method of claim 1, wherein SiH is4The flow rate of (2) is more than zero and less than or equal to 3 sccm.
4. The method according to claim 1, wherein the flow rate of GeF4 is greater than zero and equal to or less than 3 seem.
5. The method of claim 1, wherein the extraction pole magnetic field is a 90 degree magnetic field.
6. The method of claim 1, wherein the Ge is+And the crystal is deflected by 90 degrees through the magnetic field of the extraction pole and is vertically injected into the wafer.
7. The method according to claim 1, wherein in step S02, the free F and free H and HF gases are pumped out of the chamber using a vacuum pump.
8. The method of claim 1, wherein the method is performed in a batch modeCharacterized in that the voltage adopted by the ion implanter is 1KV to 60KV, the vacuum degree is 10 KV-7Pa-10-6Pa。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465292A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
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| CN102779714A (en) * | 2012-08-20 | 2012-11-14 | 杭州士兰集成电路有限公司 | Bivalent boron ion implantation technology in bipolar circuit |
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2013
- 2013-06-25 CN CN2013102568170A patent/CN103413746A/en active Pending
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| CN1438500A (en) * | 2003-03-04 | 2003-08-27 | 山东大学 | Method for preparing ridge-shape light-wave-guide of optical crystal by ion injection method |
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| CN104465292B (en) * | 2014-11-28 | 2017-05-03 | 上海华力微电子有限公司 | Pretreatment method for ion implanter |
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Application publication date: 20131127 |