CN105849869A - Method for implant productivity enhancement - Google Patents
Method for implant productivity enhancement Download PDFInfo
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- CN105849869A CN105849869A CN201480071087.XA CN201480071087A CN105849869A CN 105849869 A CN105849869 A CN 105849869A CN 201480071087 A CN201480071087 A CN 201480071087A CN 105849869 A CN105849869 A CN 105849869A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Abstract
A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.
Description
[CROSS REFERENCE TO RELATED reference]
Subject application advocates No. 61/847,776 U.S. Non-provisional Patent filed in 18 days July in 2013
The priority of application case, the disclosure of described application case is incorporated by reference.
Technical field
Ion beam quality that embodiments of the invention relate to improve in the system of being ion implanted and clearer and more definite
The method being to improve boron ion beam quality is said on ground.
Background technology
Generally implant to produce wanted electric conductivity to semiconductor workpiece by dopant species.For example,
Solar cell is implanted to produce emitter region by available dopant species.Various different machine can be used
Structure completes this and implants.In one embodiment, ion source is used.This ion source can comprise source gas
Carry out the room of ionizing.One or more than one electrode can be used to be extracted by the hole in described room
Ion from these source gases.The ion these extracted guides towards workpiece, and wherein said ion is planted
Enter within the workpiece to form solar cell.
In order to improve treatment effeciency and reduce cost, in certain embodiments, there is no any quality analysis
In the case of, make the ion extracted from ion source directly accelerate towards workpiece.In other words, make in ion source
Produce acceleration of ions and be implanted directly in workpiece.Mass analyzer is for removing non-institute from ion beam
The material wanted.Removing of mass analyzer shows that all ions from ion source extraction all will be implanted in workpiece
In.It is therefore also possible to therefore the unwanted ion produced in ion source is implanted within the workpiece.
When source gas is halogen-based compound (such as, fluoride), this phenomenon may be the most prominent.
Fluorion and neutrals (metastable or be stimulated) can react with ionogenic inner surface, thus release
Put undesired ion, such as silicon, oxygen, carbon and aluminum and the heavy metal existed as impurity element.
Therefore, the method improving beam quality (embodiment especially for using halogen radical source gas) will
It is useful.
Summary of the invention
Disclose a kind of method processing workpiece, be first coated with desired dopant material and another material
Cloth ion chamber.After this regulation process, unstrpped gas is incorporated in described room and makes its ionizing,
Described unstrpped gas includes fluorine and desired dopant material.Then extract ion from described room and make described
Ion accelerates towards described workpiece, and wherein said ion is not the most mass analyzed just to be implanted.In the regulation process phase
Between use other materials can be 3 races, 4 races or 5 race's elements.Desired dopant material can be boron.
In one embodiment, a kind of method for processing workpiece is disclosed.Described method includes: will adjust
Throttle body and regulation common gas (conditioning co-gas) are incorporated in ionogenic room, described tune
Throttle body includes that the hydride containing desired dopant material, wherein said regulation common gas include inertia
Gas, the hydride of 4 race's elements or there is the material of opposite conductivities of described desired dopant material
Hydride, wherein said regulation common gas account for the cumulative volume of introduced gas 10% and 40% it
Between；Make described regulation gas and described regulation common gas ionizing so that in described room in the chamber
Coating is formed on wall；Change after forming described coating and be incorporated into the gas in described room and by raw material
Gas is incorporated in described room, and described unstrpped gas includes fluorine and described desired dopant material；Described
Room make described unstrpped gas ionizing to produce ion；And extract described ion from described room and make
Described ion accelerates towards described workpiece so that described ion is the most mass analyzed to be just implanted in described workpiece.
In a second embodiment, disclose a kind of method processing workpiece, the method comprise the steps that and will adjust
Throttle body and regulation common gas are incorporated in ionogenic room, and described regulation gas includes borine, described
Regulation common gas includes 4 races or the hydride of 5 race's elements；The wall of described room is formed coating, its
Described in coating include boron and described 4 races or 5 race's elements；By unstrpped gas after forming described coating
Being incorporated in described room, described unstrpped gas includes fluorine and boron；Make in the chamber described unstrpped gas from
Sonization is to produce ion；And extract described ion from described room and make described ion add towards described workpiece
Speed.
In the third embodiment, a kind of method processing workpiece is disclosed.This kind of method includes: to ion source
Room be adjusted process to be coated with the wall of described rooms with boron and 4 races or 5 race elements；And at described wall
Carry out implantation process after upper formation coating, wherein make the unstrpped gas ionizing including fluorine and boron to produce
Ion, extracts described ion and make described ion accelerate towards described workpiece from described room, and described from
Son is the most mass analyzed to be just implanted in described workpiece.In certain embodiments, described regulation process includes
The regulation gas making to include borine in the chamber and the hydride including described 4 races or 5 race's elements
Regulation common gas ionizing.In some other embodiments, described regulation common gas can be hydrogen phosphide
(PH3), arsenic hydride (AsH3), germane (GeH4) or silane (SiH4)。
Accompanying drawing explanation
In order to be more fully understood that the present invention, with reference to accompanying drawing, accompanying drawing is incorporated herein by reference.
Figure 1A to Fig. 1 C shows the implant system according to different embodiments.
The representative graph that Fig. 2 is adulterant electric current and pollutant load becomes with diluent gas concentration.
Fig. 3 A to Fig. 3 B show is using in the case of two different adjustment programs as overall beam electronic current
The pollutant of percentage ratio.
Difference between Fig. 4 A to Fig. 4 B two regulation programs of explanation.
Detailed description of the invention
As it has been described above, the ionizing of based species (such as fluoride) may make in ionogenic
The seeds implanted of surface release is within the workpiece.These pollutant may comprise aluminum, carbon, nitrogen, oxygen, silicon,
Fluorine-based compound and other undesired materials (comprising the heavy metal existed as impurity element).Solve
A kind of method of the infringement caused by free halogen ion can be to introduce the second source gas during implanting.
Figure 1A to Fig. 1 C shows the various enforcements that can introduce the second source gas to the room 105 of ion source 100
Example.In in these figures each, ion source 100 comprises and is defined by several plasma chamber wall 107
Room 105, described wall can be made up of graphite or another suitable material.This room can be given via air inlet 110
105 supply one or more source gases, and described source gas is stored in source gas container 170.Can be by
Radio-frequency antenna (RF antenna) 120 or another mechanism excite this source gas.RF antenna 120 and RF electricity
Power supply (not shown) electric connection, described RF electric supply supplies electric power to RF antenna 120.
It is internal with ion source 100 that dielectric window 125 (such as quartz or alumina window) may be provided at RF antenna 120
Between.Ion source 100 also comprises the hole 140 that ion may pass through.To being arranged on outside hole 140
Extract suppression electrode 130 apply negative voltage with by hole 140 and towards workpiece 160 in room 105
Extract the ion of positively charged.Also can use ground electrode 150.In certain embodiments, 140, hole
At the side relative with the side containing dielectric window 125 of ion source 100.The ion shape extracted from room 105
Becoming ion beam 180, described ion beam guides towards workpiece 160.As it has been described above, do not use quality to divide
Ion was screened before ionic bombardment workpiece 160 by parser.Specific shown in Figure 1A
In embodiment, the second source gas can be stored in the second gas container 175 and by the second air inlet 111
Introduce to room 105.In another embodiment shown in Figure 1B, the second source gas can be stored in the second gas
The same air inlet 110 used in container 176 and by the first source gas introduces to room 105.?
In another embodiment shown in Fig. 1 C, the second source gas can be with the first source gas at single gas container 178
Middle mixing.Then pass through air inlet 110 and introduce this admixture of gas to room 105.
In in these embodiments any one, simultaneously or sequentially can introduce to room 105 first source gas and
Second source gas.
(such as, first source gas (also referred to as unstrpped gas) potentially include the adulterant being combined with fluorine
Boron).Therefore, unstrpped gas can be in DFnOr DmFnForm, wherein D represents dopant atom, its
Can be boron, gallium, phosphorus, arsenic or another 3 race or 5 race's elements.Second source gas (also referred to as carrier gas
Body) can be that there is chemical formula XHnOr XmHnMolecule, wherein H is hydrogen.X can be dopant species,
Such as, any one in those described above dopant species.Or, X can be also not interfere with workpiece 160
The atom of electric conductivity.For example, if workpiece 160 includes silicon, then X can be 4 race's elements,
Such as, silicon and germanium.
In other words, unstrpped gas can be BF3Or B2F4, and diluent gas can be (such as) PH3、
SiH4、NH3、GeH4、B2H6Or AsH3.This list represents more spendable possible materials.Certainly,
Other unstrpped gas materials and carrier gas material are also possible.
Be combined with diluent gas by by unstrpped gas, the adverse effect of fluorion can be reduced.For example,
Being not only restricted to any particular theory, the introducing of hydrogen can produce film or coating on dielectric window 125.This in order to
Protection dielectric window 125, so can reduce be derived from dielectric window 125, institute in the ion beam 180 that extracted
The amount of the pollutant contained.It addition, diluent gas can be coated with the inner surface of plasma chamber wall 107, described
Plasma chamber wall is probably another contamination sources.This coating can reduce fluorion and plasma chamber wall 107
Inner surface between interaction, thus reduce the amount of produced pollution thing.
The introducing of diluent gas can reduce the generation of pollutant and these pollutant to the knot in ion beam
Close.On the contrary, the introducing of Macrodilution gas may negatively affect mixing of using in the ion beam
The generation of miscellaneous dose of ion.For example, the introducing of excess diluent gas may reduce and produced by ion source
Adulterant beam electronic current.It addition, the hydrogeneous diluent gas of excess may cause etching and thus result in
Additional contamination.Known hydrogen can etch some material.For example, hydrogen can react with graphite wall so that produces
Raw CHxGas.
Unexpectedly, it has been determined that pollutant reduce and will not increase with carrier gas concentration and proportionally reduce.
In other words, if the amount of carrier gas increases to more than a certain threshold value, then pollutant electric current is to adulterant
The ratio of electric current actually increases.This is probably and is caused by the fact that more than a certain threshold value, equity from
The extra coating of the inner surface of daughter locular wall 107 seldom provides or will not additionally provide to be prevented fluorion
Protect.It addition, plasma parameter (such as, higher ion bulk potential) will be with high diluent gas hundred
Proportion by subtraction and change, this is likely to result in the extra sputtering of diluent gas ion pair locular wall.It addition, high is dilute
Outgassing body percentage ratio is likely to result in the etching to wall material, therefore increases pollution.Additionally spattering locular wall
Penetrate and pollution level may be made to increase.Therefore, if adulterant electric current reduces with carrier gas concentration, and
And pollutant levels keep constant or increase after a certain threshold value, then the percentage of pollutant in ion beam
Ratio must increase.
Fig. 2 shows representative graph, and this figure shows that diluent gas concentration is to dirty in adulterant beam electronic current and ion beam
The impact of dye thing percentage ratio compared with adulterant two.As it has been described above, pollutant can be containing silicon, nitrogen,
Oxygen, hydrogen, aluminum, carbon, carbon group compound, fluorine, fluorine-based compound or the ion of other undoped agent materials
Material.
As shown in Figure 2, adulterant electric current (representing by block diagram) is not in the presence of having carrier gas
Maximum.Along with diluent gas (is GeH in this example4) concentration increase, adulterant electric current there occurs
The most linear minimizing.Although this figure shows the particular kind of relationship between adulterant electric current and carrier gas concentration,
It is noted that this relation is probably specific to used experimental condition.For example, different dilute
The different pressures (or flow rate) of outgassing body, different RF power level or plasma chamber interior may
Produce Different Results.Therefore, this block diagram wishes to represent between adulterant electric current and carrier gas concentration
As trend.
Line 300 shows that the measurement of halved tie impurity level, described bundle impurity level are defined as specific dirt in ion beam
Dye thing percentage ratio compared with adulterant, during wherein pollutant can be those pollutant indicated above
Individual.As expected, when carrier gas concentration increases to 10% from 0%, bundle impurity level reduces.As above institute
State, caused by the coating effect of this hydrogen being likely due in diluent gas.It is possible that diluent gas
In other materials may affect described coating effect.For example, at GeH4In the case of, hydrogen divides
Son is light, it is thus possible to be quickly drawn out of.But, GeH4It is the weight molecule being attached with hydrogen, therefore may be used
Can have long migration time and react and be coated with the high likelihood on these surfaces with chamber surface.Citing comes
Say that there is GeHxThe compound of composition can be coated with wall, and therefore protective bulkhead material avoids fluorine etching.But,
Unexpectedly, until carrier gas concentration reaches about 30%, bundle impurity level all keeps relatively flat.
In other words, although introducing more diluent gas, but the amount of pollutant is protected relative to the amount of adulterant
Hold relative constancy.In the gamut of about 5% to 30%, bundle impurity level is less than about 1%.Astonishing
Ground, if carrier gas concentration increases above about 30%, then bundle impurity level is quite radically increased, as
Really admixture of gas is the diluent gas of 60%, then reach more than the degree of 5%.Concentration when diluent gas
Time between 5% and 30%, bundle impurity level can be minimized.
Figure 1A to Fig. 1 C utilizes the ion source with RF antenna 120 and RF electric supply to produce
Required ion.However, it may be appreciated that to other kinds of ion source can be used, comprise IHC, hollow the moon
Pole, helicon and microwave ion source.For example, it be also possible to use indirect-heating in certain embodiments cloudy
Pole (indirectly heated cathode, IHC), cathodes heated indirectly by an el uses heat to cause the heat emission of electronics.
Other ion sources are also within the scope of the invention.
Therefore, can by use two source gas to produce to have minimizing bundle impurity level extracted from
Son bundle 180.First source gas or unstrpped gas can be the material containing boron Yu two, fluorine, such as, BF3
Or B2F4.Second source gas or carrier gas can be containing hydrogen and silicon or the material of germanium, such as, silane
(SiH4) or germane (GeH4).Both sources gas is simultaneously or sequentially incorporated into the room of ion source 100
In 105, wherein source gas is ionized.Ion source can use the RF energy produced by RF antenna 120
Amount.In another embodiment, ion source may utilize the heat emission of the electronics using IHC to carry out.Ion source
It is also possible to use the additive method making gas ionization.Both sources gas can be introduced so that account for total gas and (press
Stereometer) between 5% to 30% it is diluent gas, and remaining is unstrpped gas.By use electrode 130,
Electrode 150 is extracted from the ion of two source gas by hole 140 and makes described ion towards workpiece 160
Accelerating, wherein said ion is implanted in workpiece 160.As noted earlier, may be not to these ions
Carry out quality analysis, it means that all extracted ions are all implanted in workpiece 160.
In another example, diluent gas can comprise the adulterant with opposite conductivities.For example,
First source gas or unstrpped gas can be the material containing boron Yu two, fluorine, such as, BF3Or B2F4.The
Two source gases or carrier gas can be containing hydrogen and the material of 5 race's elements (such as phosphorus, nitrogen or arsenic).
Foregoing disclosure discusses the carrier gas scope between about 5% to the 30% of total gas volume.So
And, in certain embodiments, this scope can be different.For example, in certain embodiments, carrier gas
Concentration may be up to 10%, such as, and 1% to 10%, 2% to 10%, 3% to 10% or 5% to 10%.
In another embodiment, carrier gas concentration may be up to 15%, such as, 1% to 15%, 2% to 15%,
3% to 15%, 5% to 15% or 7% to 15%.In another embodiment, carrier gas concentration may be up to
20%, such as, 2% to 20%, 3% to 20%, 5% to 20%, 7% to 20% or 10% to 20%.
In another embodiment, carrier gas concentration may be up to 30%, such as, 3% to 30%, 5% to 30%,
7% to 30%, 10% to 30% or 15% to 30%.In another embodiment, carrier gas concentration may be up to
40%, such as, 3% to 40%, 5% to 40%, 7% to 40%, 10% to 40%, 15% to 40%
Or 20% to 40%.In another embodiment, carrier gas concentration may be up to 50%, such as, 5% to 50%,
7% to 50%, 10% to 50%, 15% to 50%, 20% to 50% or 25% to 50%.Finally, exist
In another embodiment, carrier gas concentration may be up to 60%, such as, and 5% to 60%, 7% to 60%, 10%
To 60%, 15% to 60%, 20% to 60%, 25% to 60% or 30% to 60%.
Described above details use diluent gas and unstrpped gas to produce plasma, described grade from
Daughter in order to produce ion to use the most mass analyzed ion beam to implant within the workpiece.But, remove
Outside this method or replace this method, it be also possible to use other technologies.
For example, in one embodiment, can regulate before implantation process the grade of ion source 100 from
The inner surface of daughter locular wall 107.Regulation is the interior table that material is applied to these plasma chamber wall 107
Process on face.This material may be used to the adverse effect protecting plasma chamber wall 107 to exempt from halogen, from
And reduce and etch and be incorporated into the pollution in extracted ion beam from these plasma chamber wall 107
The amount of thing.
Can be adjusted in many ways.In the first embodiment, enter in the way of identical with implantation
Row regulation.In other words, energy or other plasma generators from RF antenna 120 is used
Plasma is produced in room 105.Then by electrode 130, electrode 150 be biased voltage from
The ion from described plasma is extracted in room 105.During this period, un-extracted from described grade from
The ion of daughter may be deposited on plasma chamber wall 107 and the dielectric window 125 of room 105.
In a second embodiment, it is not biased voltage to electrode 130, electrode 150.So, wait from
Daughter and ion are stayed in room 105.Equally, the ion from described plasma may be deposited on room
In the plasma chamber wall 107 of 105.
In any embodiment, the generation of this plasma can produce ion, and some of them ion is attached to
The inner surface of plasma chamber wall 107, thus on those surfaces, produce coating.This regulation process can be entered
Row about 60 minutes, but the present invention is the most unrestricted to described time quantum.In other embodiments, this regulation
Till process can be performed until the coating having produced a certain thickness.
In certain embodiments, the hydride containing desired dopant material is used to regulate plasma chamber
Wall 107.Desired dopant material can be the adulterant that will use during implantation process subsequently.Change sentence
Talk about, in unstrpped gas comprises the situation of boron (it will be implanted in workpiece during implantation process),
Can be by borine with making adjustments gas during regulation process.This borine can be diborane (B2H6), pentaborane
(B5H9), Decaboron tetradecahydride. (B10H14) or any other borine.If different adulterants will be implanted, that
Can be by different hydrides with making adjustments gas.
It addition, regulation common gas (conditioning co-gas) can be used together with this hydride.?
In some embodiments, described regulation common gas can be noble gas, such as, helium, argon, Krypton
Or xenon.In other embodiments, regulation common gas can be the hydride containing 4 race's elements, such as
But it is not limited to silicon (that is, silane SH4) or germanium (that is, germane GH4).In other embodiments, regulation
Common gas can be containing the hydride with the material of desired dopant opposite conductivities.In other words, as
Really unstrpped gas contains boron, then can be by the hydride containing 5 race's elements with making adjustments common gas.?
In this kind of situation, regulation common gas can be hydrogen phosphide (PH3) or arsenic hydride (AsH3)。
The amount of regulation common gas can change.For example, in certain embodiments, regulation is common
Gas can be between 10% to 40% of the total gas in being incorporated into room 105.In other embodiments, adjust
Joint common gas can be between 20% to the 40% of total gas.In other embodiments, regulation common gas
Can be about the 30% of the total gas introduced during regulation process.
In a particular instance, by BF3Or B2F4As unstrpped gas, workpiece is implanted.For
The plasma chamber wall 107 of regulation ion source 100, can make diborane together with regulation common gas
With.This regulation common gas can be (such as) noble gas, such as, helium, argon, Krypton or xenon
Gas；4 race's hydrides, such as, SH4Or GeH4；Or 5 race's hydrides, such as, PH3Or AsH3。
Certainly, this list is not detailed, and can be common with making adjustments by other molecules during regulation process
Gas.
Can interfere significantly on be subsequently implanted surprisingly, add regulation common gas during regulation process
Quality.For example, in testing at one, diborane is only used to come ion source as regulation gas
It is adjusted process.This regulation is carried out 1 hour.After adjustment, under the RF power of about 3KW
Use unstrpped gas (such as, B2F4) to produce plasma in room 105, and use boryl ion
Workpiece is implanted by bundle.It addition, the 10% of the total gas introduced during implantation process is to include GeH4
Diluent gas.In this test, the extraction energy of 10eV is used.When workpiece is implanted,
Carry out the analysis to ion beam.Send out and currently use 10%GeH4As diluent gas B2F4Implant
After 2 hours, pollutant (as the percentage ratio of total beam electronic current) are more than 1%.This can be at Fig. 3 A
In find out from chart, its center line 400 represents the percentage ratio of pollutant in ion beam.Pollutant comprise but not
It is limited to carbon, nitrogen, oxygen, fluorine, aluminum and contains the compound of any one in these elements.
In testing second, use the group of regulation gas (diborane) and regulation common gas (germane)
Incompatible it is adjusted.This regulation is also carried out 1 hour.Equally, after adjustment, unstrpped gas is used
(such as, B2F4) and 10%GeH4Diluent gas to produce plasma in room 105, and uses boron
Workpiece is implanted by base ion beam.When workpiece is implanted, carry out the analysis to ion beam.With
First result is different, in this case, even if after continuous operation 9 hours, and the content of pollutant
Still less than total beam electronic current 1%.This uses diagrammatic representation in figure 3b, and its center line 410 represents in ion beam
The percentage ratio of pollutant.
In operation, first it is adjusted circulating the plasma chamber wall with material coating ion source 100
107.As it has been described above, in certain embodiments, coating is Boron Based Materials, and it is by by borine (such as,
Diborane) it is incorporated into room 105 produces.Then this regulation gas is excited into plasma, and
Ion from described plasma is attached to and the plasma chamber wall 107 of application chamber 105.As above institute
State, in order to improve thickness and the quality of regulation process, regulation common gas can be used together with borine.
This regulation common gas can be noble gas, such as, helium, argon, Krypton or xenon.Real at other
Executing in example, this regulation common gas can be the hydride containing 5 race's elements, such as, PH3Or AsH3。
In other embodiments, this regulation common gas can be the hydride of 4 race's elements.This regulates common gas
Can be simultaneously introduced at least in part with borine.
This regulation process is in order to be coated with plasma chamber wall 107 so that see in plasma chamber wall 107
Impurity and other pollutant and plasma isolate.This coating contains the adulterant seen in regulation gas,
Described adulterant can be 3 race's elements, such as, boron.Described coating also can be containing seeing regulation common gas
In molecule, such as 4 race's elements, such as, germanium or silicon；Or 5 race's elements, such as, phosphorus or arsenic.Can
The coating of coating adequate thickness.The persistent period of regulation program can be based on the elapsed time, such as, and 1 hour
Regulation circulation, or thickness can be recorded based on coating when accumulating in plasma chamber wall 107.
Then the gas supplied to room 105 is replaced by those gases that will use during implantation process.
Specifically, unstrpped gas is introduced.Can continue or can not continue regulation gas and regulation common gas to be drawn
Enter in room 105.As it has been described above, this unstrpped gas can be the molecule containing adulterant and fluoride, example
As, BF3Or B2F4, but it is used as other gas.It should be noted that the doping used in implantation process
Agent can be identical with above for described in regulation process.It addition, can supply to room 105 during implantation process
Answer diluent gas.This diluent gas can be containing 3 races, 4 races or the hydride of 5 race's elements, such as but
It is not limited to B2H6、GeH4、SH4、PH3、AsH3.As it has been described above, be 3 at desired dopant material
In the situation of race's element, diluent gas can include 4 races or 5 race's elements.In certain embodiments, dilution
Gas can be same gas with regulation common gas.In other embodiments, diluent gas and regulation gas
It can be same gas.In other embodiments, diluent gas can comprise regulation gas and regulation common gas
Two.Then implantation gas is excited into plasma, and is biased voltage by electrode 130
Extract.Then being guided towards workpiece by the ion extracted, wherein said ion does not first divide through quality
Analysis is just implanted.
This implantation process is used for multiple workpiece 160 and sustainable special time period, or can extracted
Ion beam in the content of pollutant reach to terminate during predetermined content.For example, implantation process can one
Till directly lasting till that the content of pollutant reaches about the 1% of total beam electronic current, but also may select other and pollute journey
Degree.The comparison of Fig. 4 two different adjustment processes of A to Fig. 4 B show.In the first enforcement shown in Fig. 4 A
In example, diborane is only used to be adjusted as regulation gas.Regulation is carried out one hour, and connects
Beginning implantation process.When content at pollutant reaches predetermined content (such as, 1%), implantation process
Terminate.As can be seen this causes the working cycle of about 50%, when wherein room 105 being adjusted spent
The area of a room is roughly the same with workpiece carries out implantation institute amounts of time.In the second embodiment shown in Fig. 4 B
In, use diborane to be adjusted with regulation common gas, regulation common gas can be in this example
Germane.As shown in Figure 3 B, when this combination is resistant to the adverse effect of halogen and can allow longer implantation
Between.In this particular instance, regulation process is carried out 1 hour, and then carries out implantation process about 9
Individual hour.After 9 hours, the content of pollutant equals to or less than predetermined content.In other words,
In this particular, the working cycle is about 90%, and wherein the working cycle is defined as what implantation was spent
Time is divided by total time.This working cycle difference is clearly.In other words, in the period of 10 days,
With the working cycle of 90%, implant and will carry out about 216 hours.By contrast, the work of 50% is used
Cycle, it is achieved the identical implantation persistent period will take 18 days.This is directly changed into the behaviour of every workpiece
Make efficiency and cost.This example is illustrative, and selects different gas and/or implantation energy possible
Result can be made different.
These various gases and common gas is used not utilizing being ion implanted in system of quality analysis
The ability of body is surprising, this is because all ions produced in room 105 are the most all implanted in
In workpiece.Regulation process and implantation process two period use be different from dopant species material and not
The ability that workpiece can cause adverse effect is unexpected.
The present invention is not limited by specific embodiment described herein in scope.It practice, except herein
Outside the embodiment described, according to foregoing description and accompanying drawing, other various embodiments and amendments of the present invention
To be obvious to those of ordinary skill in the art.Therefore, it is intended that these other embodiments and repairing
Change and fall within the scope of the present invention.Although additionally, the most in the context of particular
Specific environment describes the present invention for specific purpose, but those skilled in the art it should be understood that
Its use be not limited to this and the present invention can valuably in any number environment for any number purpose
And implement.Therefore, invention scope set forth herein should be in view of the full duration of the present invention as described in this article
Explain with spirit.
Claims (14)
1. the method processing workpiece, it is characterised in that including:
Regulation gas and regulation common gas being incorporated in ionogenic room, described regulation gas includes containing
The hydride of dopant species, wherein said regulation common gas has been wanted to include noble gas, 4 units of race
The hydride of element or there is the hydride of material of opposite conductivities of described desired dopant material, wherein
Between 10% and 40% of the cumulative volume that described regulation common gas accounts for introduced gas；
Make described regulation gas and described regulation common gas ionizing so that in described room in the chamber
Coating is formed on wall；
Change after forming described coating and be incorporated into the gas in described room and unstrpped gas is incorporated into
In described room, described unstrpped gas includes fluorine and described desired dopant material；
Make described unstrpped gas ionizing to produce ion in the chamber；And
Extract described ion from described room and make described ion accelerate towards described workpiece so that described ion
The most mass analyzed just it is implanted in described workpiece.
The method of process workpiece the most according to claim 1, wherein said desired dopant material bag
Include boron.
The method of process workpiece the most according to claim 2, wherein said regulation common gas includes 4
The hydride of race's element.
The method of process workpiece the most according to claim 2, wherein said regulation common gas includes 5
The hydride of race's element.
The method of process workpiece the most according to claim 2, wherein said regulation common gas includes
Noble gas.
6. the method processing workpiece, it is characterised in that including:
Regulation gas and regulation common gas being incorporated in ionogenic room, described regulation gas includes boron
Alkane, described regulation common gas includes 4 races or the hydride of 5 race's elements；
Forming coating on the wall of described room, wherein said coating includes boron and described 4 races or 5 race's elements；
Unstrpped gas being incorporated in described room after forming described coating, described unstrpped gas includes fluorine
And boron；
Make described unstrpped gas ionizing to produce ion in the chamber；And
Extract described ion from described room and make described ion accelerate towards workpiece.
The method of process workpiece the most according to claim 6, wherein said ion is the most mass analyzed
Just it is implanted in described workpiece.
The method of process workpiece the most according to claim 6, wherein by diluent gas and described raw material
Gas is introduced together in described room, and described diluent gas includes 4 races or the hydride of 5 race's elements, and
And the method for described process workpiece be additionally included in described room make described diluent gas and described unstrpped gas from
Sonization is to produce ion.
The method of process workpiece the most according to claim 6, wherein described by making in the chamber
Regulation gas and described regulation common gas ionizing form described coating.
10. the method processing workpiece, it is characterised in that including:
The process that is adjusted ionogenic room to be coated with the wall of described room with boron and 4 races or 5 race's elements；
And
Carry out implantation process after described wall forms coating, wherein make to include the unstrpped gas of fluorine and boron
Ionizing, to produce ion, is extracted described ion and makes described ion accelerate towards described workpiece from described room,
And described ion is the most mass analyzed to be just implanted in described workpiece.
The method of 11. process workpiece according to claim 10, wherein said regulation process is included in
The regulation gas making to include borine in described room and the tune of the hydride including described 4 races or 5 race's elements
Joint common gas ionizing.
The method of 12. process workpiece according to claim 11, wherein said regulation common gas bag
Include hydrogen phosphide (PH3) or arsenic hydride (AsH3)。
The method of 13. process workpiece according to claim 11, wherein said regulation common gas bag
Include germane (GeH4) or silane (SiH4)。
The method of 14. process workpiece according to claim 10, the described ion shape wherein extracted
Becoming ion beam, the method for described process workpiece also includes: if the contamination percentage in described ion beam
Exceed predetermined threshold, just repeat described regulation process.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/090,001 | 2013-11-26 | ||
| US14/090,001 US9034743B2 (en) | 2013-07-18 | 2013-11-26 | Method for implant productivity enhancement |
| PCT/US2014/064211 WO2015080843A1 (en) | 2013-07-18 | 2014-11-06 | Method for implant productivity enhancement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105849869A true CN105849869A (en) | 2016-08-10 |
| CN105849869B CN105849869B (en) | 2017-08-11 |
Family
ID=54197767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480071087.XA Expired - Fee Related CN105849869B (en) | 2013-11-26 | 2014-11-06 | The method for handling workpiece |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6412573B2 (en) |
| KR (1) | KR102272833B1 (en) |
| CN (1) | CN105849869B (en) |
| TW (1) | TWI642091B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109923641A (en) * | 2016-11-08 | 2019-06-21 | 瓦里安半导体设备公司 | Use the plasma doping of solid doping sources |
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| US20110143527A1 (en) * | 2009-12-14 | 2011-06-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for generating uniform ion beam |
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2014
- 2014-11-06 JP JP2016533661A patent/JP6412573B2/en not_active Expired - Fee Related
- 2014-11-06 CN CN201480071087.XA patent/CN105849869B/en not_active Expired - Fee Related
- 2014-11-06 KR KR1020167016898A patent/KR102272833B1/en active IP Right Grant
- 2014-11-25 TW TW103140699A patent/TWI642091B/en not_active IP Right Cessation
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| CN101291742A (en) * | 2005-08-30 | 2008-10-22 | 先进科技材料公司 | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| CN101681782A (en) * | 2007-03-29 | 2010-03-24 | 瓦里安半导体设备公司 | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| CN102047376A (en) * | 2008-05-30 | 2011-05-04 | 艾克塞利斯科技公司 | Control of particles on semiconductor wafers when implanting boron hydrides |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102272833B1 (en) | 2021-07-06 |
| JP2017502503A (en) | 2017-01-19 |
| TWI642091B (en) | 2018-11-21 |
| JP6412573B2 (en) | 2018-10-24 |
| CN105849869B (en) | 2017-08-11 |
| TW201526084A (en) | 2015-07-01 |
| KR20160089490A (en) | 2016-07-27 |
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