EP3000123A4 - Enriched silicon precursor compositions and apparatus and processes for utilizing same - Google Patents
Enriched silicon precursor compositions and apparatus and processes for utilizing sameInfo
- Publication number
- EP3000123A4 EP3000123A4 EP14800248.8A EP14800248A EP3000123A4 EP 3000123 A4 EP3000123 A4 EP 3000123A4 EP 14800248 A EP14800248 A EP 14800248A EP 3000123 A4 EP3000123 A4 EP 3000123A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- processes
- silicon precursor
- precursor compositions
- utilizing same
- enriched silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 title 1
- 239000012686 silicon precursor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/898,809 US8779383B2 (en) | 2010-02-26 | 2013-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
PCT/US2014/039028 WO2014190087A1 (en) | 2013-05-21 | 2014-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3000123A1 EP3000123A1 (en) | 2016-03-30 |
EP3000123A4 true EP3000123A4 (en) | 2016-12-28 |
Family
ID=51934121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14800248.8A Withdrawn EP3000123A4 (en) | 2013-05-21 | 2014-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3000123A4 (en) |
JP (1) | JP2016524793A (en) |
KR (1) | KR20160009572A (en) |
CN (1) | CN105431927A (en) |
SG (1) | SG11201506474WA (en) |
WO (1) | WO2014190087A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170294314A1 (en) * | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
US10361081B2 (en) * | 2016-11-24 | 2019-07-23 | Axcelis Technologies, Inc. | Phosphine co-gas for carbon implants |
US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
CN207458887U (en) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | Ion implantation device |
WO2021248204A1 (en) * | 2020-06-11 | 2021-12-16 | The University Of Melbourne | Isotopic purification of silicon |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295820A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Ion implanting method |
JP2000345342A (en) * | 1999-03-29 | 2000-12-12 | Natl Res Inst For Metals | Production of high purity isotopic silicon crystal film |
US20080179545A1 (en) * | 2007-01-25 | 2008-07-31 | Varian Semiconductor Equipment Associates | Technique for Improving the Performance and Extending the Lifetime of an Ion Source with Gas Dilution |
US20120142174A1 (en) * | 2010-02-26 | 2012-06-07 | Advanced Technology Materials, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61181525A (en) * | 1985-02-06 | 1986-08-14 | Rikagaku Kenkyusho | Working substance for isolating isotope using laser and method therefor |
US7494888B2 (en) * | 2004-06-23 | 2009-02-24 | Agere Systems Inc. | Device and method using isotopically enriched silicon |
US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
US7994487B2 (en) * | 2008-05-30 | 2011-08-09 | Axcelis Technologies, Inc. | Control of particles on semiconductor wafers when implanting boron hydrides |
US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
-
2014
- 2014-05-21 EP EP14800248.8A patent/EP3000123A4/en not_active Withdrawn
- 2014-05-21 WO PCT/US2014/039028 patent/WO2014190087A1/en active Application Filing
- 2014-05-21 CN CN201480029840.9A patent/CN105431927A/en active Pending
- 2014-05-21 SG SG11201506474WA patent/SG11201506474WA/en unknown
- 2014-05-21 KR KR1020157033138A patent/KR20160009572A/en not_active Application Discontinuation
- 2014-05-21 JP JP2016515059A patent/JP2016524793A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295820A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Ion implanting method |
JP2000345342A (en) * | 1999-03-29 | 2000-12-12 | Natl Res Inst For Metals | Production of high purity isotopic silicon crystal film |
US20080179545A1 (en) * | 2007-01-25 | 2008-07-31 | Varian Semiconductor Equipment Associates | Technique for Improving the Performance and Extending the Lifetime of an Ion Source with Gas Dilution |
US20120142174A1 (en) * | 2010-02-26 | 2012-06-07 | Advanced Technology Materials, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
Non-Patent Citations (4)
Title |
---|
BULANOV A D ET AL: "Determination of Impurities in Monoisotopic Silicon Tetrafluoride", INORGANIC MATERIALS, NAUKA/INTERPERIODICA, MO, vol. 40, no. 7, 1 July 2004 (2004-07-01), pages 754 - 759, XP019297310, ISSN: 1608-3172 * |
See also references of WO2014190087A1 * |
SENNIKOV P G ET AL: "Towards 0.99999Si", SOLID STATE COMMUNICATIONS, PERGAMON, GB, vol. 152, no. 6, 5 January 2012 (2012-01-05), pages 455 - 457, XP028396140, ISSN: 0038-1098, [retrieved on 20120110], DOI: 10.1016/J.SSC.2012.01.008 * |
SUZUKI H ET AL: "Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 241, no. 1-2, 28 February 2005 (2005-02-28), pages 266 - 269, XP027771514, ISSN: 0169-4332, [retrieved on 20050228] * |
Also Published As
Publication number | Publication date |
---|---|
WO2014190087A1 (en) | 2014-11-27 |
KR20160009572A (en) | 2016-01-26 |
EP3000123A1 (en) | 2016-03-30 |
JP2016524793A (en) | 2016-08-18 |
CN105431927A (en) | 2016-03-23 |
SG11201506474WA (en) | 2015-09-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20150826 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MAYER, JAMES, J. Inventor name: SWEENEY, JOSEPH, D. Inventor name: RAY, RICHARD, S. Inventor name: KAIM,ROBERT |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20161130 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/265 20060101ALI20161124BHEP Ipc: H01J 37/08 20060101AFI20161124BHEP Ipc: H01J 37/317 20060101ALI20161124BHEP |
|
17Q | First examination report despatched |
Effective date: 20171129 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20180612 |