DE60140749D1 - Ung - Google Patents

Ung

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Publication number
DE60140749D1
DE60140749D1 DE60140749T DE60140749T DE60140749D1 DE 60140749 D1 DE60140749 D1 DE 60140749D1 DE 60140749 T DE60140749 T DE 60140749T DE 60140749 T DE60140749 T DE 60140749T DE 60140749 D1 DE60140749 D1 DE 60140749D1
Authority
DE
Germany
Prior art keywords
ung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140749T
Other languages
English (en)
Inventor
Lisa P Allen
David B Fenner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Epion Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Application granted granted Critical
Publication of DE60140749D1 publication Critical patent/DE60140749D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60140749T 2000-07-10 2001-07-10 Ung Expired - Lifetime DE60140749D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21719600P 2000-07-10 2000-07-10
PCT/US2001/021620 WO2002005315A2 (en) 2000-07-10 2001-07-10 System and method for improving thin films by gas cluster ion be am processing

Publications (1)

Publication Number Publication Date
DE60140749D1 true DE60140749D1 (de) 2010-01-21

Family

ID=22810043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140749T Expired - Lifetime DE60140749D1 (de) 2000-07-10 2001-07-10 Ung

Country Status (5)

Country Link
US (1) US6537606B2 (de)
EP (1) EP1303866B1 (de)
JP (1) JP4902088B2 (de)
DE (1) DE60140749D1 (de)
WO (1) WO2002005315A2 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352842B2 (ja) * 1994-09-06 2002-12-03 科学技術振興事業団 ガスクラスターイオンビームによる薄膜形成方法
US20050126905A1 (en) * 1999-06-22 2005-06-16 President And Fellows Of Harvard College High-precision feedback control for ion sculpting of solid state features
JP2003532349A (ja) * 2000-05-02 2003-10-28 エピオン コーポレイション Ｇｃｉｂ処理によるデバイス特性の調整システム及び方法
WO2002003883A2 (en) * 2000-07-10 2002-01-17 Epion Corporation Improving effectiveness of medical stents by gcib
JP4168381B2 (ja) * 2000-12-26 2008-10-22 ティーイーエル エピオン インク． ガスクラスターイオンビームのための充電制御および線量測定システム
AU2002308659A1 (en) 2001-05-09 2002-11-18 Epion Corporation Method and system for improving the effectiveness of artificial joints by the application of gas cluster ion beam technology
DE50112976D1 (de) * 2001-05-22 2007-10-18 Infineon Technologies Ag Verfahren zur herstellung einer schicht mit einem vordefinierten schichtdickenprofil
JP3813512B2 (ja) * 2002-01-07 2006-08-23 株式会社東芝 貼り合わせ基板の評価方法及び評価装置、半導体装置の製造方法
US20030224620A1 (en) * 2002-05-31 2003-12-04 Kools Jacques C.S. Method and apparatus for smoothing surfaces on an atomic scale
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
US6833322B2 (en) * 2002-10-17 2004-12-21 Applied Materials, Inc. Apparatuses and methods for depositing an oxide film
FR2846788B1 (fr) * 2002-10-30 2005-06-17 Procede de fabrication de substrats demontables
FR2853991B1 (fr) * 2003-04-17 2005-10-28 Soitec Silicon On Insulator Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne
JP4006531B2 (ja) * 2003-05-28 2007-11-14 国立大学法人京都大学 イオンビームによる表面処理方法および表面処理装置
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
DE10351059B4 (de) * 2003-10-31 2007-03-01 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen
JP3816484B2 (ja) * 2003-12-15 2006-08-30 日本航空電子工業株式会社 ドライエッチング方法
JP2008502150A (ja) * 2004-06-03 2008-01-24 エピオン コーポレーション 改善された二重ダマシン集積構造およびその製造方法
JP4665443B2 (ja) 2004-06-22 2011-04-06 旭硝子株式会社 ガラス基板の研磨方法
WO2006047611A2 (en) * 2004-10-26 2006-05-04 Jayant Neogi Apparatus and method for polishing gemstones and the like
US20060093753A1 (en) * 2004-10-29 2006-05-04 Nickel Janice H Method of engineering a property of an interface
US20070184656A1 (en) * 2004-11-08 2007-08-09 Tel Epion Inc. GCIB Cluster Tool Apparatus and Method of Operation
US7799683B2 (en) * 2004-11-08 2010-09-21 Tel Epion, Inc. Copper interconnect wiring and method and apparatus for forming thereof
US7291558B2 (en) * 2004-11-08 2007-11-06 Tel Epion Inc. Copper interconnect wiring and method of forming thereof
FR2880471B1 (fr) * 2004-12-31 2007-03-09 Altis Semiconductor Snc Procede de nettoyage d'un semiconducteur
KR20070097090A (ko) * 2005-02-02 2007-10-02 아사히 가라스 가부시키가이샤 유리 기판의 연마 방법
US7504135B2 (en) * 2005-02-03 2009-03-17 Samsung Electronics Co., Ltd Method of fabricating a manganese diffusion barrier
US7186992B2 (en) * 2005-02-07 2007-03-06 Hewlett-Packard Development Company, L.P. Method of fabricating a polarizing layer on an interface
US7329304B2 (en) * 2005-04-05 2008-02-12 Respironics Oxytec, Inc. Portable oxygen concentrator
CN101176183A (zh) * 2005-05-20 2008-05-07 日本航空电子工业株式会社 固体表面的平坦化方法和设备
TWI520905B (zh) 2005-08-30 2016-02-11 安特格利斯公司 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用之大群氫化硼之形成方法
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
EP2747120B1 (de) 2006-10-30 2017-12-20 Japan Aviation Electronics Industry, Limited Verfahren zur verflachung einer festen Oberfläche mit einem Gascluster-Ionenstrahl
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US7949425B2 (en) * 2006-12-06 2011-05-24 Axcelis Technologies, Inc. High throughput wafer notch aligner
US20080138178A1 (en) * 2006-12-06 2008-06-12 Axcelis Technologies,Inc. High throughput serial wafer handling end station
US7550749B2 (en) 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7550748B2 (en) * 2007-03-30 2009-06-23 Tel Epion, Inc. Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam
US7566888B2 (en) * 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
JP5415676B2 (ja) * 2007-05-30 2014-02-12 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
JP5143477B2 (ja) * 2007-05-31 2013-02-13 信越化学工業株式会社 Ｓｏｉウエーハの製造方法
US7564024B2 (en) * 2007-06-28 2009-07-21 Tel Epion Inc. Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpieces
US7917241B2 (en) * 2007-08-01 2011-03-29 Tel Epion Inc. Method and system for increasing throughput during location specific processing of a plurality of substrates
US7626183B2 (en) * 2007-09-05 2009-12-01 Tel Epion Inc. Methods for modifying features of a workpiece using a gas cluster ion beam
US8293126B2 (en) * 2007-09-28 2012-10-23 Tel Epion Inc. Method and system for multi-pass correction of substrate defects
US8298432B2 (en) * 2007-09-28 2012-10-30 Tel Epion Inc. Method and system for adjusting beam dimension for high-gradient location specific processing
JP2011512173A (ja) * 2008-01-31 2011-04-21 エクソジェネシス コーポレーション ガスクラスタイオンビーム技術の利用による外科用メスの改良方法およびシステム並びに改良外科用メス
CN101981661A (zh) 2008-02-11 2011-02-23 高级技术材料公司 在半导体处理系统中离子源的清洗
US9103031B2 (en) * 2008-06-24 2015-08-11 Tel Epion Inc. Method and system for growing a thin film using a gas cluster ion beam
US7905199B2 (en) * 2008-06-24 2011-03-15 Tel Epion Inc. Method and system for directional growth using a gas cluster ion beam
US20090314963A1 (en) * 2008-06-24 2009-12-24 Tel Epion Inc. Method for forming trench isolation
KR101640266B1 (ko) * 2008-06-24 2016-07-22 텔 에피온 인크 가스 클러스터 이온 빔을 사용하여 박막을 성장시키기 위한 방법
US7834327B2 (en) * 2008-09-23 2010-11-16 Tel Epion Inc. Self-biasing active load circuit and related power supply for use in a charged particle beam processing system
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8304033B2 (en) * 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8148237B2 (en) 2009-08-07 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Pressurized treatment of substrates to enhance cleaving process
US8350556B2 (en) * 2009-08-25 2013-01-08 The United States of America as represented by the Secretary of Commerce, NIST Integrated optical element and Faraday cup
US8124427B2 (en) * 2009-10-22 2012-02-28 International Business Machines Corporation Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
US9018024B2 (en) * 2009-10-22 2015-04-28 International Business Machines Corporation Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness
US8110483B2 (en) * 2009-10-22 2012-02-07 International Business Machines Corporation Forming an extremely thin semiconductor-on-insulator (ETSOI) layer
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
WO2011056515A2 (en) 2009-10-27 2011-05-12 Advanced Technology Materials, Inc. Ion implantation system and method
CN105387340B (zh) 2010-01-14 2018-09-18 恩特格里斯公司 适于容纳流体供应容器及与之耦接的流路的罩壳
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI582836B (zh) 2010-02-26 2017-05-11 恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8669539B2 (en) 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
JP5236687B2 (ja) * 2010-05-26 2013-07-17 兵庫県 表面処理方法及び表面処理装置
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
US20120225532A1 (en) * 2011-03-03 2012-09-06 Tel Epion Inc. Method for controlling a resistive property in a resistive element using a gas cluster ion beam
US8440578B2 (en) 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US9039907B2 (en) 2011-07-20 2015-05-26 Imec Methods for improving integrated photonic device uniformity
US8512586B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
WO2013122986A1 (en) 2012-02-14 2013-08-22 Advanced Technology Materials, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US9812291B2 (en) 2012-02-14 2017-11-07 Entegris, Inc. Alternate materials and mixtures to minimize phosphorus buildup in implant applications
US9240357B2 (en) 2013-04-25 2016-01-19 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device having preliminary stacked structure with offset oxide etched using gas cluster ion
CN105637616A (zh) 2013-08-16 2016-06-01 恩特格里斯公司 基板中的硅注入及提供其硅前体组合物
US9236221B2 (en) * 2013-11-22 2016-01-12 Tel Epion Inc. Molecular beam enhanced GCIB treatment
US9349836B2 (en) 2014-01-14 2016-05-24 International Business Machines Corporation Fin end spacer for preventing merger of raised active regions
US9123505B1 (en) * 2014-02-21 2015-09-01 Tel Epion Inc. Apparatus and methods for implementing predicted systematic error correction in location specific processing
US9111962B1 (en) 2014-03-20 2015-08-18 International Business Machines Corporation Selective dielectric spacer deposition for exposing sidewalls of a finFET
US20150279686A1 (en) * 2014-03-31 2015-10-01 Taiwan Semiconductor Manufacturing Company Limited Semiconductor processing methods
US9540725B2 (en) * 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
US9378992B2 (en) 2014-06-27 2016-06-28 Axcelis Technologies, Inc. High throughput heated ion implantation system and method
SG11201702566RA (en) * 2014-09-05 2017-04-27 Tel Epion Inc Process gas enhancement for beam treatment of a substrate
CN104409308B (zh) * 2014-11-26 2016-09-28 中国科学技术大学 一种微调刻蚀深度空间分布的方法和系统
CN107251202B (zh) * 2014-12-19 2020-12-11 环球晶圆股份有限公司 用于对半导体结构执行外延平滑工艺的系统和方法
TWI685012B (zh) * 2014-12-22 2020-02-11 美商卡爾蔡司顯微鏡有限責任公司 帶電粒子束系統、用以處理樣品的方法、用以製造約瑟夫接面的方法與用以產生複數個約瑟夫接面的方法
JP6826535B2 (ja) * 2015-03-11 2021-02-03 エクソジェネシス コーポレーション ガスクラスタイオンビーム技術に基づく中性ビーム処理方法およびそれにより製造される製品
US10081861B2 (en) * 2015-04-08 2018-09-25 Varian Semiconductor Equipment Associates, Inc. Selective processing of a workpiece
US10280512B2 (en) * 2015-07-27 2019-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for carbon film deposition profile control
US9607803B2 (en) 2015-08-04 2017-03-28 Axcelis Technologies, Inc. High throughput cooled ion implantation system and method
CN106847695A (zh) * 2015-12-07 2017-06-13 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
US9761455B2 (en) 2015-12-15 2017-09-12 International Business Machines Corporation Material removal process for self-aligned contacts
WO2018203282A1 (en) * 2017-05-05 2018-11-08 3M Innovative Properties Company Scatterometry system and method of using the same
KR102020714B1 (ko) * 2017-10-30 2019-09-11 한국기초과학지원연구원 기체 클러스터 이온 빔을 이용한 나노 구조 촉매 제조 방법
US11177110B2 (en) * 2018-02-06 2021-11-16 Howard Hughes Medical Institute Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling
US20220262593A1 (en) * 2021-02-15 2022-08-18 E.A. Fischione Instruments, Inc. System and Method for Uniform Ion Milling
CN113458876A (zh) * 2021-06-21 2021-10-01 武汉大学深圳研究院 一种团簇能量逐级递减的团簇离子束表面抛光方法
GB2623533A (en) * 2022-10-18 2024-04-24 Spts Technologies Ltd Apparatus and method for reducing substrate thickness and surface roughness
KR102623967B1 (ko) * 2023-10-16 2024-01-12 (주)와이엔디케이 대상물 표면 가공 장치 및 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH552197A (de) * 1972-11-24 1974-07-31 Bbc Brown Boveri & Cie Einrichtung zum messen der rauhigkeit einer oberflaeche.
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith
JPS63254733A (ja) * 1987-04-13 1988-10-21 Nec Corp 半導体装置の製造装置
US4906594A (en) * 1987-06-12 1990-03-06 Agency Of Industrial Science And Technology Surface smoothing method and method of forming SOI substrate using the surface smoothing method
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JP2639158B2 (ja) * 1989-08-02 1997-08-06 日本電気株式会社 エッチング方法およびエッチング装置
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
JPH05190499A (ja) * 1992-01-13 1993-07-30 Hitachi Ltd エッチング装置および半導体基板の製造方法
JP3731917B2 (ja) * 1994-09-06 2006-01-05 三洋電機株式会社 ガスクラスターイオンビームによる固体表面の平坦化方法
JPH08259400A (ja) * 1995-03-28 1996-10-08 Matsushita Electric Ind Co Ltd ダイヤモンドのエッチング方法及びその装置
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6251835B1 (en) * 1997-05-08 2001-06-26 Epion Corporation Surface planarization of high temperature superconductors
US5953578A (en) * 1998-09-08 1999-09-14 Winbond Electronics Corp. Global planarization method using plasma etching
US6375790B1 (en) * 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6635883B2 (en) * 1999-12-06 2003-10-21 Epion Corporation Gas cluster ion beam low mass ion filter

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EP1303866B1 (de) 2009-12-09
JP2004503064A (ja) 2004-01-29
US6537606B2 (en) 2003-03-25
EP1303866A2 (de) 2003-04-23
WO2002005315A3 (en) 2002-03-14
US20020014407A1 (en) 2002-02-07
JP4902088B2 (ja) 2012-03-21
EP1303866A4 (de) 2007-02-28
WO2002005315A2 (en) 2002-01-17

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