FR2853991B1 - Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne - Google Patents
Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionneInfo
- Publication number
- FR2853991B1 FR2853991B1 FR0304814A FR0304814A FR2853991B1 FR 2853991 B1 FR2853991 B1 FR 2853991B1 FR 0304814 A FR0304814 A FR 0304814A FR 0304814 A FR0304814 A FR 0304814A FR 2853991 B1 FR2853991 B1 FR 2853991B1
- Authority
- FR
- France
- Prior art keywords
- dismantling
- substrates
- treatment
- intermediate substrate
- improved polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0304814A FR2853991B1 (fr) | 2003-04-17 | 2003-04-17 | Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0304814A FR2853991B1 (fr) | 2003-04-17 | 2003-04-17 | Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2853991A1 FR2853991A1 (fr) | 2004-10-22 |
FR2853991B1 true FR2853991B1 (fr) | 2005-10-28 |
Family
ID=33041940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0304814A Expired - Fee Related FR2853991B1 (fr) | 2003-04-17 | 2003-04-17 | Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2853991B1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110648909B (zh) * | 2019-09-30 | 2022-03-18 | 福建北电新材料科技有限公司 | 回磨方法、衬底晶片以及电子器件 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2961948B1 (fr) | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
FR3059149A1 (fr) * | 2016-11-21 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un film mince a base d'inp ou de gaas |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10275905A (ja) * | 1997-03-31 | 1998-10-13 | Mitsubishi Electric Corp | シリコンウェーハの製造方法およびシリコンウェーハ |
US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
JP4902088B2 (ja) * | 2000-07-10 | 2012-03-21 | ティーイーエル エピオン インク. | ガスクラスターイオンビーム処理による薄膜を改良するためのシステムおよび方法 |
-
2003
- 2003-04-17 FR FR0304814A patent/FR2853991B1/fr not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110648909B (zh) * | 2019-09-30 | 2022-03-18 | 福建北电新材料科技有限公司 | 回磨方法、衬底晶片以及电子器件 |
Also Published As
Publication number | Publication date |
---|---|
FR2853991A1 (fr) | 2004-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20101230 |