SG11202105498QA - Fluorine ion implantation method and system - Google Patents

Fluorine ion implantation method and system

Info

Publication number
SG11202105498QA
SG11202105498QA SG11202105498QA SG11202105498QA SG11202105498QA SG 11202105498Q A SG11202105498Q A SG 11202105498QA SG 11202105498Q A SG11202105498Q A SG 11202105498QA SG 11202105498Q A SG11202105498Q A SG 11202105498QA SG 11202105498Q A SG11202105498Q A SG 11202105498QA
Authority
SG
Singapore
Prior art keywords
ion implantation
implantation method
fluorine ion
fluorine
ion
Prior art date
Application number
SG11202105498QA
Inventor
Ying Tang
Sharad N Yedave
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11202105498QA publication Critical patent/SG11202105498QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Conductive Materials (AREA)
SG11202105498QA 2018-12-15 2019-12-13 Fluorine ion implantation method and system SG11202105498QA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862780219P 2018-12-15 2018-12-15
US201862780222P 2018-12-15 2018-12-15
US201962806365P 2019-02-15 2019-02-15
PCT/US2019/066168 WO2020123907A1 (en) 2018-12-15 2019-12-13 Fluorine ion implantation method and system

Publications (1)

Publication Number Publication Date
SG11202105498QA true SG11202105498QA (en) 2021-06-29

Family

ID=71072869

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11202105498QA SG11202105498QA (en) 2018-12-15 2019-12-13 Fluorine ion implantation method and system
SG11202105497PA SG11202105497PA (en) 2018-12-15 2019-12-13 Fluorine ion implantation system with non-tungsten materials and methods of using

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11202105497PA SG11202105497PA (en) 2018-12-15 2019-12-13 Fluorine ion implantation system with non-tungsten materials and methods of using

Country Status (8)

Country Link
US (2) US11315791B2 (en)
EP (2) EP3895199A4 (en)
JP (2) JP2022514242A (en)
KR (2) KR102642616B1 (en)
CN (2) CN113261073A (en)
SG (2) SG11202105498QA (en)
TW (3) TWI733275B (en)
WO (2) WO2020123901A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116325070A (en) 2020-10-02 2023-06-23 恩特格里斯公司 Method and system for generating aluminum ions
US20240043988A1 (en) * 2022-08-05 2024-02-08 Entegris, Inc. Gas mixture as co-gas for ion implant

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JPH01255140A (en) * 1988-04-05 1989-10-12 Denki Kagaku Kogyo Kk Arc chamber for ion source
JP3338434B2 (en) * 1994-02-28 2002-10-28 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP3268180B2 (en) * 1994-11-18 2002-03-25 株式会社東芝 Ion generator, ion irradiation device, and method of manufacturing semiconductor device
JP2001101991A (en) * 1999-10-01 2001-04-13 Nec Kyushu Ltd Ion implanter and method for regulating ion implantation dosage
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TW521295B (en) * 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
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SG165321A1 (en) 2005-08-30 2010-10-28 Advanced Tech Materials Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7932539B2 (en) 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
TWI474382B (en) 2007-04-11 2015-02-21 山米奎普公司 Cluster ion implantation for defect engineering
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Also Published As

Publication number Publication date
TWI811695B (en) 2023-08-11
CN113261073A (en) 2021-08-13
SG11202105497PA (en) 2021-06-29
US20200194265A1 (en) 2020-06-18
KR20210091829A (en) 2021-07-22
CN113261074A (en) 2021-08-13
US11315791B2 (en) 2022-04-26
TW202038289A (en) 2020-10-16
US20200194264A1 (en) 2020-06-18
EP3895198A1 (en) 2021-10-20
EP3895199A4 (en) 2022-09-14
JP2022514242A (en) 2022-02-10
TW202137275A (en) 2021-10-01
KR102623884B1 (en) 2024-01-10
JP2022514243A (en) 2022-02-10
KR102642616B1 (en) 2024-03-05
TWI734300B (en) 2021-07-21
KR20210092839A (en) 2021-07-26
TW202033801A (en) 2020-09-16
EP3895199A1 (en) 2021-10-20
WO2020123901A1 (en) 2020-06-18
US11538687B2 (en) 2022-12-27
WO2020123907A1 (en) 2020-06-18
TWI733275B (en) 2021-07-11
EP3895198A4 (en) 2022-10-05

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