SG11202100912VA - Ion implantation processes and apparatus using gallium - Google Patents
Ion implantation processes and apparatus using galliumInfo
- Publication number
- SG11202100912VA SG11202100912VA SG11202100912VA SG11202100912VA SG11202100912VA SG 11202100912V A SG11202100912V A SG 11202100912VA SG 11202100912V A SG11202100912V A SG 11202100912VA SG 11202100912V A SG11202100912V A SG 11202100912VA SG 11202100912V A SG11202100912V A SG 11202100912VA
- Authority
- SG
- Singapore
- Prior art keywords
- gallium
- ion implantation
- implantation processes
- processes
- ion
- Prior art date
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 238000005468 ion implantation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Combustion & Propulsion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862730198P | 2018-09-12 | 2018-09-12 | |
| PCT/US2019/050656 WO2020056026A1 (en) | 2018-09-12 | 2019-09-11 | Ion implantation processes and apparatus using gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202100912VA true SG11202100912VA (en) | 2021-02-25 |
Family
ID=69719681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202100912VA SG11202100912VA (en) | 2018-09-12 | 2019-09-11 | Ion implantation processes and apparatus using gallium |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10892137B2 (en) |
| EP (1) | EP3850654A4 (en) |
| JP (2) | JP7041321B2 (en) |
| KR (2) | KR102367048B1 (en) |
| CN (2) | CN114709121A (en) |
| SG (1) | SG11202100912VA (en) |
| TW (2) | TWI730407B (en) |
| WO (1) | WO2020056026A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024030209A1 (en) * | 2022-08-05 | 2024-02-08 | Entegris, Inc. | Gas mixture as co-gas for ion implant |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US929529A (en) * | 1908-08-18 | 1909-07-27 | Joseph Woll | Propeller. |
| JPH0731994B2 (en) * | 1984-11-17 | 1995-04-10 | 日新電機株式会社 | Metal ion source |
| JPH04181636A (en) * | 1990-11-16 | 1992-06-29 | Citizen Watch Co Ltd | Metal ion source |
| US6135128A (en) | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| US6583544B1 (en) | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
| JP4053736B2 (en) | 2001-03-28 | 2008-02-27 | 株式会社東芝 | Ion generator, ion irradiation device, and ion generation method |
| US6949740B1 (en) * | 2002-09-13 | 2005-09-27 | Edward William Sheehan | Laminated lens for introducing gas-phase ions into the vacuum systems of mass spectrometers |
| US7338822B2 (en) * | 2003-05-09 | 2008-03-04 | Cree, Inc. | LED fabrication via ion implant isolation |
| WO2006097804A2 (en) * | 2005-02-28 | 2006-09-21 | Epispeed S.A. | System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| US7586109B2 (en) * | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
| CN102395704B (en) * | 2009-02-13 | 2014-02-19 | 盖利姆企业私人有限公司 | Plasma deposition |
| US20120048723A1 (en) * | 2010-08-24 | 2012-03-01 | Varian Semiconductor Equipment Associates, Inc. | Sputter target feed system |
| JP5369304B2 (en) * | 2010-09-30 | 2013-12-18 | ソイテック | System and method for forming semiconductor material by atomic layer deposition |
| JP5740179B2 (en) * | 2011-02-28 | 2015-06-24 | 日東電工株式会社 | Transparent gas barrier film, method for producing transparent gas barrier film, organic electroluminescence element, solar cell and thin film battery |
| JP5317038B2 (en) | 2011-04-05 | 2013-10-16 | 日新イオン機器株式会社 | Ion source and reflective electrode structure |
| JP5787793B2 (en) * | 2012-03-05 | 2015-09-30 | 株式会社東芝 | Ion source |
| US9064795B2 (en) | 2012-03-30 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
| US9396902B2 (en) * | 2012-05-22 | 2016-07-19 | Varian Semiconductor Equipment Associates, Inc. | Gallium ION source and materials therefore |
| US9187832B2 (en) * | 2013-05-03 | 2015-11-17 | Varian Semiconductor Equipment Associates, Inc. | Extended lifetime ion source |
| KR101952698B1 (en) * | 2014-10-27 | 2019-02-28 | 엔테그리스, 아이엔씨. | Ion implantation processes and apparatus |
| US20170292186A1 (en) | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Dopant compositions for ion implantation |
| US9899193B1 (en) * | 2016-11-02 | 2018-02-20 | Varian Semiconductor Equipment Associates, Inc. | RF ion source with dynamic volume control |
-
2019
- 2019-09-09 US US16/564,965 patent/US10892137B2/en active Active
- 2019-09-11 CN CN202210352677.6A patent/CN114709121A/en active Pending
- 2019-09-11 SG SG11202100912VA patent/SG11202100912VA/en unknown
- 2019-09-11 KR KR1020217007101A patent/KR102367048B1/en active IP Right Grant
- 2019-09-11 JP JP2021512885A patent/JP7041321B2/en active Active
- 2019-09-11 WO PCT/US2019/050656 patent/WO2020056026A1/en unknown
- 2019-09-11 KR KR1020227005514A patent/KR20220025942A/en not_active Application Discontinuation
- 2019-09-11 CN CN201980057575.8A patent/CN112655066B/en active Active
- 2019-09-11 EP EP19859919.3A patent/EP3850654A4/en active Pending
- 2019-09-12 TW TW108133015A patent/TWI730407B/en active
- 2019-09-12 TW TW110117812A patent/TWI782533B/en active
-
2022
- 2022-03-11 JP JP2022038090A patent/JP2022106692A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN114709121A (en) | 2022-07-05 |
| KR20210032539A (en) | 2021-03-24 |
| US20200083015A1 (en) | 2020-03-12 |
| CN112655066A (en) | 2021-04-13 |
| TWI782533B (en) | 2022-11-01 |
| KR102367048B1 (en) | 2022-02-23 |
| EP3850654A1 (en) | 2021-07-21 |
| EP3850654A4 (en) | 2022-06-01 |
| US10892137B2 (en) | 2021-01-12 |
| JP7041321B2 (en) | 2022-03-23 |
| KR20220025942A (en) | 2022-03-03 |
| WO2020056026A1 (en) | 2020-03-19 |
| TW202018754A (en) | 2020-05-16 |
| JP2022106692A (en) | 2022-07-20 |
| JP2021527316A (en) | 2021-10-11 |
| TWI730407B (en) | 2021-06-11 |
| TW202133208A (en) | 2021-09-01 |
| CN112655066B (en) | 2022-04-01 |
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