NO20005980L - Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling - Google Patents

Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling

Info

Publication number
NO20005980L
NO20005980L NO20005980A NO20005980A NO20005980L NO 20005980 L NO20005980 L NO 20005980L NO 20005980 A NO20005980 A NO 20005980A NO 20005980 A NO20005980 A NO 20005980A NO 20005980 L NO20005980 L NO 20005980L
Authority
NO
Norway
Prior art keywords
contact layer
ferroelectric memory
ferroelectric
conductive polymer
electrodes
Prior art date
Application number
NO20005980A
Other languages
English (en)
Norwegian (no)
Other versions
NO20005980D0 (no
Inventor
Nicklas Johansson
Lichun Chen
Original Assignee
Thin Film Electronics Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Ab filed Critical Thin Film Electronics Ab
Priority to NO20005980A priority Critical patent/NO20005980L/no
Publication of NO20005980D0 publication Critical patent/NO20005980D0/no
Priority to EP01997814A priority patent/EP1346367B1/fr
Priority to CNB018222080A priority patent/CN100342453C/zh
Priority to KR10-2003-7007038A priority patent/KR100504612B1/ko
Priority to US10/169,064 priority patent/US6734478B2/en
Priority to AU2316502A priority patent/AU2316502A/xx
Priority to JP2002544725A priority patent/JP2004515055A/ja
Priority to AU2002223165A priority patent/AU2002223165B2/en
Priority to ES01997814T priority patent/ES2236361T3/es
Priority to CA002429887A priority patent/CA2429887C/fr
Priority to RU2003119441/09A priority patent/RU2259605C2/ru
Priority to AT01997814T priority patent/ATE290713T1/de
Priority to PCT/NO2001/000473 priority patent/WO2002043071A1/fr
Priority to DE60109325T priority patent/DE60109325T2/de
Publication of NO20005980L publication Critical patent/NO20005980L/no
Priority to NO20023051A priority patent/NO319548B1/no
Priority to HK04106412A priority patent/HK1063688A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Static Random-Access Memory (AREA)
NO20005980A 2000-11-27 2000-11-27 Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling NO20005980L (no)

Priority Applications (16)

Application Number Priority Date Filing Date Title
NO20005980A NO20005980L (no) 2000-11-27 2000-11-27 Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
DE60109325T DE60109325T2 (de) 2000-11-27 2001-11-27 Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung
JP2002544725A JP2004515055A (ja) 2000-11-27 2001-11-27 強誘電性メモリ回路及びその製造方法
ES01997814T ES2236361T3 (es) 2000-11-27 2001-11-27 Circuito de memoria ferroelectrica y metodo para su fabricacion.
KR10-2003-7007038A KR100504612B1 (ko) 2000-11-27 2001-11-27 강유전성 메모리 회로 및 그의 제조 방법
US10/169,064 US6734478B2 (en) 2000-11-27 2001-11-27 Ferroelectric memory circuit and method for its fabrication
AU2316502A AU2316502A (en) 2000-11-27 2001-11-27 A ferroelectric memory circuit and method for its fabrication
EP01997814A EP1346367B1 (fr) 2000-11-27 2001-11-27 Circuit de memoire ferroelectrique et son procede de fabrication
AU2002223165A AU2002223165B2 (en) 2000-11-27 2001-11-27 A ferroelectric memory circuit and method for its fabrication
CNB018222080A CN100342453C (zh) 2000-11-27 2001-11-27 铁电存储电路及其制造方法
CA002429887A CA2429887C (fr) 2000-11-27 2001-11-27 Circuit de memoire ferroelectrique et son procede de fabrication
RU2003119441/09A RU2259605C2 (ru) 2000-11-27 2001-11-27 Ферроэлектрический запоминающий контур и способ его изготовления
AT01997814T ATE290713T1 (de) 2000-11-27 2001-11-27 Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung
PCT/NO2001/000473 WO2002043071A1 (fr) 2000-11-27 2001-11-27 Circuit de memoire ferroelectrique et son procede de fabrication
NO20023051A NO319548B1 (no) 2000-11-27 2002-06-24 Ferroelektrisk minnekrets og fremgangsmate ved dens fremstilling
HK04106412A HK1063688A1 (en) 2000-11-27 2004-08-26 A ferroelectric memory circuit and method for its fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20005980A NO20005980L (no) 2000-11-27 2000-11-27 Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling

Publications (2)

Publication Number Publication Date
NO20005980D0 NO20005980D0 (no) 2000-11-27
NO20005980L true NO20005980L (no) 2002-05-28

Family

ID=19911842

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20005980A NO20005980L (no) 2000-11-27 2000-11-27 Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling

Country Status (14)

Country Link
US (1) US6734478B2 (fr)
EP (1) EP1346367B1 (fr)
JP (1) JP2004515055A (fr)
KR (1) KR100504612B1 (fr)
CN (1) CN100342453C (fr)
AT (1) ATE290713T1 (fr)
AU (2) AU2316502A (fr)
CA (1) CA2429887C (fr)
DE (1) DE60109325T2 (fr)
ES (1) ES2236361T3 (fr)
HK (1) HK1063688A1 (fr)
NO (1) NO20005980L (fr)
RU (1) RU2259605C2 (fr)
WO (1) WO2002043071A1 (fr)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
JP4886160B2 (ja) * 2001-05-07 2012-02-29 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法
AU2002340793A1 (en) 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
EP1390984B1 (fr) 2001-05-07 2009-08-26 Advanced Micro Devices, Inc. Dispositif de memoire a grille flottante utilisant une matiere moleculaire composite
KR100895901B1 (ko) 2001-05-07 2009-05-04 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 효과를 갖는 스위치 요소
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
WO2003017282A1 (fr) 2001-08-13 2003-02-27 Advanced Micro Devices, Inc. Cellule de memoire
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6829092B2 (en) * 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
DE10156470B4 (de) 2001-11-16 2006-06-08 Infineon Technologies Ag RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen
US6878980B2 (en) 2001-11-23 2005-04-12 Hans Gude Gudesen Ferroelectric or electret memory circuit
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US6800238B1 (en) * 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
NO315399B1 (no) * 2002-03-01 2003-08-25 Thin Film Electronics Asa Minnecelle
NO316637B1 (no) * 2002-03-25 2004-03-15 Thin Film Electronics Asa Volumetrisk datalagringsapparat
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6839479B2 (en) 2002-05-29 2005-01-04 Silicon Light Machines Corporation Optical switch
NO322192B1 (no) * 2002-06-18 2006-08-28 Thin Film Electronics Asa Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
TWI248138B (en) 2002-12-20 2006-01-21 Shipley Co Llc Electronic device manufacture
US6890813B2 (en) * 2003-01-06 2005-05-10 Intel Corporation Polymer film metalization
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
WO2004068534A2 (fr) * 2003-01-29 2004-08-12 Polyic Gmbh & Co. Kg Composant accumulateur organique et circuit de commande utilise a cet effet
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US7046420B1 (en) 2003-02-28 2006-05-16 Silicon Light Machines Corporation MEM micro-structures and methods of making the same
US6930340B2 (en) * 2003-03-03 2005-08-16 Seiko Epson Corporation Memory cell array including ferroelectric capacitors, method for making the same, and ferroelectric memory device
US6656763B1 (en) * 2003-03-10 2003-12-02 Advanced Micro Devices, Inc. Spin on polymers for organic memory devices
US7259039B2 (en) 2003-07-09 2007-08-21 Spansion Llc Memory device and methods of using and making the device
WO2005064705A1 (fr) * 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Augmentation de la mouillabilite de solutions polymeres a deposer sur des couches en polymeres ferroelectriques hydrophobes
US20050139879A1 (en) * 2003-12-24 2005-06-30 Diana Daniel C. Ion implanting conductive electrodes of polymer memories
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
KR100626912B1 (ko) 2004-04-23 2006-09-20 주식회사 하이닉스반도체 불휘발성 강유전체 수직 전극 셀과 수직 전극 셀을 이용한불휘발성 강유전체 메모리 장치 및 그 수직 전극 셀 제조방법
US20060000493A1 (en) * 2004-06-30 2006-01-05 Steger Richard M Chemical-mechanical post-etch removal of photoresist in polymer memory fabrication
US7253502B2 (en) * 2004-07-28 2007-08-07 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal organic memory device, electrical assembly utilizing same, and information handling system utilizing same
US7045897B2 (en) * 2004-07-28 2006-05-16 Endicott Interconnect Technologies, Inc. Electrical assembly with internal memory circuitized substrate having electronic components positioned thereon, method of making same, and information handling system utilizing same
US7808024B2 (en) * 2004-09-27 2010-10-05 Intel Corporation Ferroelectric polymer memory module
KR20060070716A (ko) * 2004-12-21 2006-06-26 한국전자통신연구원 유기 메모리 소자 및 제조 방법
NO322202B1 (no) * 2004-12-30 2006-08-28 Thin Film Electronics Asa Fremgangsmate i fremstillingen av en elektronisk innretning
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
US20080128682A1 (en) * 2005-05-11 2008-06-05 University Of Seoul Foundation Of Industry- Academic Cooperation Ferrodielectric Memory Device And Method For Manufacturing The Same
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
US20070003695A1 (en) * 2005-06-30 2007-01-04 Alexander Tregub Method of manufacturing a polymer memory device
WO2007058436A1 (fr) * 2005-11-15 2007-05-24 Iferro Co., Ltd. Dispositif de memoire
KR100966302B1 (ko) * 2005-11-15 2010-06-28 서울시립대학교 산학협력단 메모리 장치
US20070126001A1 (en) * 2005-12-05 2007-06-07 Sung-Yool Choi Organic semiconductor device and method of fabricating the same
GB2433646A (en) 2005-12-14 2007-06-27 Seiko Epson Corp Printing ferroelectric devices
EP1798732A1 (fr) * 2005-12-15 2007-06-20 Agfa-Gevaert Cellule de mémoire passive ferroélectrique et son procédé de fabrication
US7706165B2 (en) 2005-12-20 2010-04-27 Agfa-Gevaert Nv Ferroelectric passive memory cell, device and method of manufacture thereof
JP2007184462A (ja) * 2006-01-10 2007-07-19 Agfa Gevaert Nv 強誘電性記憶素子、その素子を含むデバイス及びその製法
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
EP1995736A1 (fr) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Dispositif ferroélectrique et barrière dýinjection modulable
CN101359665B (zh) * 2007-07-30 2011-12-28 徐海生 铁电随机存取芯片
KR20090059811A (ko) * 2007-12-07 2009-06-11 한국전자통신연구원 유기 메모리 소자 및 그의 제조방법
SG157267A1 (en) * 2008-05-29 2009-12-29 Sony Corp Ferroelectric memory device
KR101201673B1 (ko) * 2008-07-01 2012-11-15 한국과학기술원 수동 매트릭스-어드레스 가능한 메모리 장치
EP2192636A1 (fr) * 2008-11-26 2010-06-02 Rijksuniversiteit Groningen Diode luminescente modulable
US9476026B2 (en) * 2009-03-12 2016-10-25 New Jersey Institute Of Technology Method of tissue repair using a piezoelectric scaffold
KR20110062904A (ko) * 2009-12-04 2011-06-10 한국전자통신연구원 저항형 메모리 장치 및 그 형성 방법
EP2724342B1 (fr) * 2011-06-27 2018-10-17 Xerox Corporation Réduction de court-circuit dans une cellule de mémoire ferroélectrique comprenant une pile de couches disposées sur un substrat flexible
US8994014B2 (en) * 2012-06-06 2015-03-31 Saudi Basic Industries Corporation Ferroelectric devices, interconnects, and methods of manufacture thereof
EP2907135B1 (fr) * 2012-10-09 2016-08-31 Saudi Basic Industries Corporation Dispositif de mémoire résistive fabriqué à partir d'un seul matériau polymère
FR3004854B1 (fr) 2013-04-19 2015-04-17 Arkema France Dispositif de memoire ferroelectrique
CN103762217B (zh) * 2014-01-26 2016-05-04 江苏巨邦环境工程集团股份有限公司 一种铁电存储器的制造方法
CN106575575B (zh) * 2014-06-09 2018-12-28 沙特基础全球技术有限公司 使用脉冲电磁辐射来处理薄膜有机铁电材料
EP3192108B1 (fr) * 2014-09-12 2019-03-27 SABIC Global Technologies B.V. Utilisation de traitement de solution robuste dans l'air ambiant destiné à préparer des films ferroélectriques organiques à l'échelle nanométrique
EP3331928B1 (fr) 2015-08-05 2020-05-06 Xerox Corporation Procédé pour échanger un groupe terminal d'un copolymère pvdf-trfe
KR102599612B1 (ko) * 2019-06-27 2023-11-08 브이메모리 주식회사 전기장을 이용한 전류 경로 제어 방법 및 전자 소자
EP3993072A1 (fr) * 2020-10-27 2022-05-04 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Piézoélectriques imprimées à grande surface avec réponse haute fréquence

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257581A (ja) * 1984-06-04 1985-12-19 Nippon Telegr & Teleph Corp <Ntt> 高感度圧電素子及びその製造方法
JPS62198176A (ja) * 1986-02-26 1987-09-01 Mitsubishi Petrochem Co Ltd 透明高分子圧電素子及びその製造方法
JPS6320883A (ja) * 1986-07-14 1988-01-28 Fujikura Ltd 圧電フイルムおよびその製造方法
JPS63104386A (ja) * 1986-10-20 1988-05-09 Onkyo Corp 高分子圧電素子
JPH02158173A (ja) * 1988-12-12 1990-06-18 Seiko Epson Corp 記憶装置
DE3925970A1 (de) 1989-08-05 1991-02-07 Hoechst Ag Elektrisch leitfaehige polymere und ihre verwendung als orientierungsschicht in fluessigkristall-schalt- und -anzeigeelementen
JPH03126275A (ja) * 1989-10-12 1991-05-29 Seiko Epson Corp 非線形２端子素子
JPH05232516A (ja) * 1991-03-15 1993-09-10 Seiko Epson Corp アクティブデバイス及びその製造方法
US5356500A (en) * 1992-03-20 1994-10-18 Rutgers, The State University Of New Jersey Piezoelectric laminate films and processes for their manufacture
JP2808380B2 (ja) 1992-04-17 1998-10-08 松下電器産業株式会社 空間光変調素子の駆動方法
JPH0764107A (ja) * 1993-08-30 1995-03-10 Sharp Corp 非線形素子基板の製造方法
EP1271669A3 (fr) * 1994-09-06 2005-01-26 Koninklijke Philips Electronics N.V. Dispositif électroluminescent comprenant une couche à électrodes structurée transparente constituée d'un polymère conducteur
DE19640239A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Speicherzelle mit Polymerkondensator
US6025618A (en) * 1996-11-12 2000-02-15 Chen; Zhi Quan Two-parts ferroelectric RAM
US6545384B1 (en) * 1997-02-07 2003-04-08 Sri International Electroactive polymer devices
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
JP3956190B2 (ja) * 2000-01-28 2007-08-08 セイコーエプソン株式会社 強誘電体キャパシタアレイ及び強誘電体メモリの製造方法

Also Published As

Publication number Publication date
AU2316502A (en) 2002-06-03
WO2002043071A1 (fr) 2002-05-30
CA2429887A1 (fr) 2002-05-30
DE60109325D1 (de) 2005-04-14
KR20030059272A (ko) 2003-07-07
US20030056078A1 (en) 2003-03-20
HK1063688A1 (en) 2005-01-07
JP2004515055A (ja) 2004-05-20
CA2429887C (fr) 2005-03-29
CN100342453C (zh) 2007-10-10
RU2259605C2 (ru) 2005-08-27
EP1346367A1 (fr) 2003-09-24
DE60109325T2 (de) 2006-04-13
KR100504612B1 (ko) 2005-08-01
NO20005980D0 (no) 2000-11-27
AU2002223165B2 (en) 2005-02-17
ES2236361T3 (es) 2005-07-16
CN1488148A (zh) 2004-04-07
ATE290713T1 (de) 2005-03-15
US6734478B2 (en) 2004-05-11
EP1346367B1 (fr) 2005-03-09

Similar Documents

Publication Publication Date Title
NO20005980L (no) Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
NO20022910L (no) Fremgangsmåte til fremstilling av elektrodelag i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning
RU2003119441A (ru) Ферроэлектрический запоминающий контур и способ его изготовления
EP1229602A4 (fr) Procede pour produire un ensemble film-electrodes, et procede pour produire une pile a combustible du type polymere solide
TW200503183A (en) Planar polymer memory device
EP1782428A1 (fr) Circuit de memoire ferroelectrique ou electret organique et procede de fabrication dudit circuit
TWI266655B (en) Production of catalyst coated membranes
WO2005106890A8 (fr) Circuit electronique organique presentant une couche intermediaire fonctionnelle et procede de fabrication dudit circuit
US20190196285A1 (en) Manufacturing method of array substrate and its upper electrode line pattern and liquid crystal display panel
Cao et al. Structural Engineering of H0. 5Z0. 5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses
EP3226271B1 (fr) Dispositif électrochimique
US8399289B2 (en) Programmable polyelectrolyte electrical switches
NO20023051L (no) Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
KR102652757B1 (ko) 변동 저저항 라인 비휘발성 메모리 소자 및 이의 동작 방법
CN109192739A (zh) 一种薄膜晶体管及其制备方法、阵列基板和显示装置
WO2022197706A3 (fr) Dispositif ferroélectrique semi-conducteur
KR940001398A (ko) 반도체장치의 캐패시터 제조방법 및 그 구조
KR19980702953A (ko) 개선된 엘에스시오 스택 전극 제조 방법
US6433377B1 (en) Chain RAM and method for fabricating the same
US20210226064A1 (en) Thin film transistor and manufacturing method thereof, and display apparatus
KR0161473B1 (ko) 반도체 장치의 강유전성 커패시터 및 그 제조방법
KR102474130B1 (ko) 변동 저저항 라인 비휘발성 메모리 소자 및 이의 동작 방법
KR100282262B1 (ko) 강유전체 캐패시터 회로의 구성방법
CN103094123A (zh) 薄膜晶体管的制造方法
JPH0221663A (ja) 薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application