ATE290713T1 - Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung - Google Patents

Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung

Info

Publication number
ATE290713T1
ATE290713T1 AT01997814T AT01997814T ATE290713T1 AT E290713 T1 ATE290713 T1 AT E290713T1 AT 01997814 T AT01997814 T AT 01997814T AT 01997814 T AT01997814 T AT 01997814T AT E290713 T1 ATE290713 T1 AT E290713T1
Authority
AT
Austria
Prior art keywords
contact layer
ferroelectric
electrodes
conducting polymer
thin film
Prior art date
Application number
AT01997814T
Other languages
English (en)
Inventor
Nicklas Johansson
Lichun Chen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE290713T1 publication Critical patent/ATE290713T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
AT01997814T 2000-11-27 2001-11-27 Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung ATE290713T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20005980A NO20005980L (no) 2000-11-27 2000-11-27 Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
PCT/NO2001/000473 WO2002043071A1 (en) 2000-11-27 2001-11-27 A ferroelectric memory circuit and method for its fabrication

Publications (1)

Publication Number Publication Date
ATE290713T1 true ATE290713T1 (de) 2005-03-15

Family

ID=19911842

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01997814T ATE290713T1 (de) 2000-11-27 2001-11-27 Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung

Country Status (14)

Country Link
US (1) US6734478B2 (de)
EP (1) EP1346367B1 (de)
JP (1) JP2004515055A (de)
KR (1) KR100504612B1 (de)
CN (1) CN100342453C (de)
AT (1) ATE290713T1 (de)
AU (2) AU2316502A (de)
CA (1) CA2429887C (de)
DE (1) DE60109325T2 (de)
ES (1) ES2236361T3 (de)
HK (1) HK1063688A1 (de)
NO (1) NO20005980L (de)
RU (1) RU2259605C2 (de)
WO (1) WO2002043071A1 (de)

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Also Published As

Publication number Publication date
EP1346367B1 (de) 2005-03-09
NO20005980L (no) 2002-05-28
CA2429887A1 (en) 2002-05-30
US20030056078A1 (en) 2003-03-20
JP2004515055A (ja) 2004-05-20
CA2429887C (en) 2005-03-29
AU2002223165B2 (en) 2005-02-17
KR100504612B1 (ko) 2005-08-01
KR20030059272A (ko) 2003-07-07
ES2236361T3 (es) 2005-07-16
CN100342453C (zh) 2007-10-10
AU2316502A (en) 2002-06-03
HK1063688A1 (en) 2005-01-07
NO20005980D0 (no) 2000-11-27
CN1488148A (zh) 2004-04-07
EP1346367A1 (de) 2003-09-24
US6734478B2 (en) 2004-05-11
WO2002043071A1 (en) 2002-05-30
DE60109325T2 (de) 2006-04-13
DE60109325D1 (de) 2005-04-14
RU2259605C2 (ru) 2005-08-27

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