NL8501773A - Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. - Google Patents
Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. Download PDFInfo
- Publication number
- NL8501773A NL8501773A NL8501773A NL8501773A NL8501773A NL 8501773 A NL8501773 A NL 8501773A NL 8501773 A NL8501773 A NL 8501773A NL 8501773 A NL8501773 A NL 8501773A NL 8501773 A NL8501773 A NL 8501773A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- semiconductor
- semiconductor body
- thin
- magnetic
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 14
- 239000002223 garnet Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 5
- 230000006870 function Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims description 2
- 230000005328 spin glass Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 230000000763 evoking effect Effects 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 79
- 239000012212 insulator Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- JSUIEZRQVIVAMP-UHFFFAOYSA-N gallium iron Chemical compound [Fe].[Ga] JSUIEZRQVIVAMP-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8501773A NL8501773A (nl) | 1985-06-20 | 1985-06-20 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
US06/874,748 US4983251A (en) | 1985-06-20 | 1986-06-16 | Method of manufacturing semiconductor devices |
JP13938486A JP2608548B2 (ja) | 1985-06-20 | 1986-06-17 | 半導体デバイスの製造方法 |
ES556144A ES8707023A1 (es) | 1985-06-20 | 1986-06-17 | Un metodo para fabricar un dispositivo semiconductor |
CN86105660.4A CN1004669B (zh) | 1985-06-20 | 1986-06-17 | 半导体器件的制造方法 |
DE8686201062T DE3676367D1 (de) | 1985-06-20 | 1986-06-18 | Verfahren zur herstellung von halbleiteranordnungen mittels einer mechanischen verbindung von zwei koerpern. |
EP19860201062 EP0209173B1 (fr) | 1985-06-20 | 1986-06-18 | Procédé pour la fabrication de dispositifs semi-conducteurs comportant la liaison mécanique entre deux corps |
CA000511986A CA1245776A (fr) | 1985-06-20 | 1986-06-19 | Liaisonnement-activation pour la fabrication de dispositifs semiconducteurs |
AU58854/86A AU585355B2 (en) | 1985-06-20 | 1986-06-20 | Method of manufacturing semiconductor devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8501773A NL8501773A (nl) | 1985-06-20 | 1985-06-20 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
NL8501773 | 1985-06-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8501773A true NL8501773A (nl) | 1987-01-16 |
Family
ID=19846169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8501773A NL8501773A (nl) | 1985-06-20 | 1985-06-20 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
Country Status (9)
Country | Link |
---|---|
US (1) | US4983251A (fr) |
EP (1) | EP0209173B1 (fr) |
JP (1) | JP2608548B2 (fr) |
CN (1) | CN1004669B (fr) |
AU (1) | AU585355B2 (fr) |
CA (1) | CA1245776A (fr) |
DE (1) | DE3676367D1 (fr) |
ES (1) | ES8707023A1 (fr) |
NL (1) | NL8501773A (fr) |
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JP6632462B2 (ja) * | 2016-04-28 | 2020-01-22 | 信越化学工業株式会社 | 複合ウェーハの製造方法 |
CN106784073A (zh) * | 2016-12-29 | 2017-05-31 | 苏州爱彼光电材料有限公司 | 电光器件 |
FR3079661A1 (fr) * | 2018-03-29 | 2019-10-04 | Soitec | Procede de fabrication d'un substrat pour filtre radiofrequence |
US10978508B2 (en) | 2018-10-16 | 2021-04-13 | L3 Cincinnati Electronics Corporation | Infrared detector having a directly bonded silicon substrate present on top thereof |
US11347001B2 (en) * | 2020-04-01 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of fabricating the same |
US11340512B2 (en) * | 2020-04-27 | 2022-05-24 | Raytheon Bbn Technologies Corp. | Integration of electronics with Lithium Niobate photonics |
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US3577044A (en) * | 1966-03-08 | 1971-05-04 | Ibm | Integrated semiconductor devices and fabrication methods therefor |
US3909332A (en) * | 1973-06-04 | 1975-09-30 | Gen Electric | Bonding process for dielectric isolation of single crystal semiconductor structures |
US3997381A (en) * | 1975-01-10 | 1976-12-14 | Intel Corporation | Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
US3974006A (en) * | 1975-03-21 | 1976-08-10 | Valentin Rodriguez | Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate |
JPS5320872A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Production of impatt diode |
DE2738614A1 (de) * | 1976-09-01 | 1978-03-02 | Hitachi Ltd | Verfahren zum herstellen von halbleitersubstraten fuer integrierte halbleiterschaltkreise |
JPS5810869B2 (ja) * | 1977-11-05 | 1983-02-28 | 三菱電機株式会社 | 可変容量ダイオ−ドの製造方法 |
DE2842492C2 (de) * | 1978-09-29 | 1986-04-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode |
JPS5730374A (en) * | 1980-07-29 | 1982-02-18 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS5769523A (en) * | 1980-10-17 | 1982-04-28 | Matsushita Electric Ind Co Ltd | Manufacture of magnetic head |
JPS5884458A (ja) * | 1981-11-13 | 1983-05-20 | Toshiba Corp | 半導体基板の製造方法 |
JPS58123770A (ja) * | 1982-01-18 | 1983-07-23 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型半導体装置およびその作製方法 |
DE3311553C2 (de) * | 1983-03-30 | 1985-11-14 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Verfahren zum Verbinden von Formteilen mit Siliziumkarbidoberfläche |
JPS6051700A (ja) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | シリコン結晶体の接合方法 |
US4465547A (en) * | 1983-09-29 | 1984-08-14 | General Electric Company | Method of bonding a poly (vinylidene fluoride) solid to a solid substrate |
JPH0616537B2 (ja) * | 1983-10-31 | 1994-03-02 | 株式会社東芝 | 半導体基体の製造方法 |
JPS60120577A (ja) * | 1983-12-05 | 1985-06-28 | Semiconductor Energy Lab Co Ltd | 半導体装置用電極の作製方法 |
JPS61191038A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 薄膜部を有するSiキヤビテイ構造の製造方法 |
US4714517A (en) * | 1986-05-08 | 1987-12-22 | National Semiconductor Corporation | Copper cleaning and passivating for tape automated bonding |
US4689111A (en) * | 1986-10-28 | 1987-08-25 | International Business Machines Corp. | Process for promoting the interlaminate adhesion of polymeric materials to metal surfaces |
-
1985
- 1985-06-20 NL NL8501773A patent/NL8501773A/nl not_active Application Discontinuation
-
1986
- 1986-06-16 US US06/874,748 patent/US4983251A/en not_active Expired - Lifetime
- 1986-06-17 JP JP13938486A patent/JP2608548B2/ja not_active Expired - Lifetime
- 1986-06-17 ES ES556144A patent/ES8707023A1/es not_active Expired
- 1986-06-17 CN CN86105660.4A patent/CN1004669B/zh not_active Expired
- 1986-06-18 DE DE8686201062T patent/DE3676367D1/de not_active Expired - Lifetime
- 1986-06-18 EP EP19860201062 patent/EP0209173B1/fr not_active Expired - Lifetime
- 1986-06-19 CA CA000511986A patent/CA1245776A/fr not_active Expired
- 1986-06-20 AU AU58854/86A patent/AU585355B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
JP2608548B2 (ja) | 1997-05-07 |
CA1245776A (fr) | 1988-11-29 |
AU5885486A (en) | 1986-12-24 |
CN86105660A (zh) | 1987-02-25 |
CN1004669B (zh) | 1989-06-28 |
DE3676367D1 (de) | 1991-02-07 |
ES8707023A1 (es) | 1987-07-01 |
EP0209173A1 (fr) | 1987-01-21 |
ES556144A0 (es) | 1987-07-01 |
AU585355B2 (en) | 1989-06-15 |
US4983251A (en) | 1991-01-08 |
JPS61294846A (ja) | 1986-12-25 |
EP0209173B1 (fr) | 1991-01-02 |
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