KR950001909A - 산화환원식 도전성 물질을 갖는 반도체장치와 그 제조방법 - Google Patents

산화환원식 도전성 물질을 갖는 반도체장치와 그 제조방법 Download PDF

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KR950001909A
KR950001909A KR1019940012702A KR19940012702A KR950001909A KR 950001909 A KR950001909 A KR 950001909A KR 1019940012702 A KR1019940012702 A KR 1019940012702A KR 19940012702 A KR19940012702 A KR 19940012702A KR 950001909 A KR950001909 A KR 950001909A
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layer
semiconductor device
conductive metal
metal oxide
stacked
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디. 매니어 파푸
모아잠미 레자
죠셉 모가브 시.
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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Abstract

본 발명은 원소금속과 그 도전성 산화금속을 포함하는 층(21,161,61,81,121, 125,133,137)을 갖는 반도체장치를 포함하며, 거기에서, 상기 층이 산화되거나 환원되는 것이 상기 반도체장치의 인접구역이 산화 또는 환원되는 것보다 더 우세할 수 있다. 또한, 본 발명은 상기 반도체장치를 형성하기 위한 방법을 포함한다. 기층구역(11)과 실리콘함유층(132)과, 유전층(41,101,122,134)과, 전극(135)과, 장벽층(141,144)과, 접촉플러그 및 경유플러그(13,141; 34,132)와, 상호접속부(145) 및 페로일렉트릭축전기가 층에 의해 보호되고 층으로 형성될 수 있다. 본 발명에 이용될 수도 있는 원소금속과 그 도전성 산화금속의 예로는 루테늄과 이산화루테늄, 레늄과 이산화레늄, 이리듐과 이산화이리듐, 오스뮴과 사산화오스뮴 등이 있다.

Description

산화환원식 도전성 물질을 갖는 반도체장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명의 한 실시예에 따라 접촉플러그위에 있는 원소금속과 그 도전성 산화금속을 포함하는 금속 화합물을 갖는 층을 형성하는 여러 단계에서의 기층의 일부를 각각 도시한 단면도.

Claims (3)

  1. 주면(primary surface)을 갖는 기층(10,80)과, 상기 주면에 인접한 기층내에 있는 위치(11)와 상기 기층위에 중첩된 위치(132,41,101,122,134,41,101,122,135, 141,144,145)들로 이루어진 그룹에서 선택된 하나의 위치에 있는 제1구역 및, 상기 제1구역위에 중첩된 제1층(21,161,61,81,111,121,125,133,137)을 포함하는 반도체장치에 있어서, 상기 제1층이 원소금속과 그 도전성 산화금속을 포함하고, 상기 원소금속이 도전성 산화금속으로 산화될 수 있으며, 상기 도전성 산화금속이 원소금속으로 환원될 수 있고, 그러한 산화반응과 환원반응이 서로 가역적인 것이며, 상기 제1층이 제1반응, 즉, 가역적인 산화반응과 환원반응 중 우세한 한 반응으로 반응할 수 있게 구성된 것을 특징으로 하는 반도체 장치.
  2. 주면을 갖는 기층과, 한기층(11)내의 구역과, 또 다른 기층(132)위에 적층된 실리콘함유층과, 전극(135)과, 또 다른 기층(141,144)위에 적층된 장벽층과, 또 다른 기층(13,142,34,132)위에 적층된 접촉플러그(contact plug)와, 그러한 기층위에 적층된 경유플러그(via plug) 및, 또 다른 기층(145)위에 적층된 상호접속부로 이루어진 그룹에서 선택된 제1구역 및, 상기 제1구역위에 적층된 제1층(21,161,121, 133,137)를 포함하는 반도체장치에 있어서, 상기 제1층은 원소금속과 그 도전성 산화금속을 포함하며, 상기 원소금속이 그 도전성 산화금속으로 산화되는 것이 상기 제1구역이 산화되는 것보다 더 우세할 수 있게 구성된 것을 특징으로 하는 반도체 장치.
  3. 페로일렉트릭층(41,101,122,134) 및, 상기 페로일렉트릭층위에 적층된 제1층 (61,111,125,137)을 포함하는 페로일렉트릭축전기에 있어서, 상기 제1층이 원소금속과 그 도전성 산화금속을 포함하고, 상기 도전성 산화금속이 원소금속으로 환원되는 것이 상기 페로일렉트리층이 환원되는 것보다 더 우세할 수 있게 구성된 것을 특징으로 하는 페로일렉트릭축전기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940012702A 1993-06-07 1994-06-07 환원/산화되는도전성물질을갖는반도체소자와그제조방법 KR100354578B1 (ko)

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US08/072,012 US5407855A (en) 1993-06-07 1993-06-07 Process for forming a semiconductor device having a reducing/oxidizing conductive material
US072,012 1993-06-07

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DE69433582T2 (de) 2005-02-17
KR100354578B1 (ko) 2002-12-18
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CN1093319C (zh) 2002-10-23
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US5407855A (en) 1995-04-18
US5510651A (en) 1996-04-23

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