KR940006246A - 반도체 디바이스용 유전체 구조 및 그 제조방법 - Google Patents

반도체 디바이스용 유전체 구조 및 그 제조방법 Download PDF

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KR940006246A
KR940006246A KR1019930012268A KR930012268A KR940006246A KR 940006246 A KR940006246 A KR 940006246A KR 1019930012268 A KR1019930012268 A KR 1019930012268A KR 930012268 A KR930012268 A KR 930012268A KR 940006246 A KR940006246 A KR 940006246A
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dielectric layer
primary
forming
primary dielectric
dielectric
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KR1019930012268A
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KR100267440B1 (ko
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윤 유식
피. 코박스 로날드
이. 토마스 미카엘
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존 엠. 클락 3세
내쇼날 세미컨덕터 코포레이션
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Abstract

기판상에 제공된 유전체 구조는, 상기 기판상에 형성된 1차 유전체 층으로서, 1차 유전체가 탄탈륨 펜톡사이드와 같이 높은 유전 상수를 갖는 금속 산화물인 1차 유전체 층, 및 상기 1차 유전체 층상에 형성된 실리콘 옥사이드 또는 실리콘 니트라이드와 같은 2차 유전체 층을 포함한다. 한 실시예에서, 다층 구조는 2차 유전체 층상에 배치된 제2의 1차 유전체층, 및 제2의 1차 유전체 층상에 배치된 제2의 2차 유전체 층을 포함하는데, 각각의 1차 유전체 층은 제공된 인가 전계에 대하여 적은 누설 전류를 특징으로 하는 제1의 결정질 상태를 이룬다. 기판상에 유전체 구조를 형성하는 방법은, 높은 유전 상수를 갖는 금속 산화물인 1차 유전체 층을 형성하는 단계, 상기 1차 유전체 층상에 2차 유전체 층을 형성하는 단계, 및 상기 1차 유전체 층을 어닐링하는 단계를 포함한다.

Description

반도체 디바이스용 유전체 구조 및 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 방법의 제1단계전에 형성된 기판의 단면도,
제2도는 제1도와 유사하며, 제1의 2차 유전체층을 제공하는 단계 후에 형성된 단면도,
제3도는 제2도와 유사하며, 제1의 유전체층을 제공하는 단계 후에 형성된 단면도,
제4도는 제3도와 유사하며, 제2의 2차 유전체층을 제공하는 단계 후에 형성된 단면도,
제5도는 제4도와 유사하며, 재산화 단계후에 형성된 단면도,
제6도는 제5도와 유사하며, 전극을 제공하는 단계후에 형성된 단면도,
제7도는 본 발명의 변형 실시예에 따른 방법의 공정 단계의 단면도,
제8도는 제7도와 유사하며, 2차 유전체층을 형성하는 단계후에 형성된 단면도.

Claims (1)

  1. (a) 반도체 기판상에 형성되어 있는 제1의 1차 유전체 층으로서, 1차 유전체가 높은 유전 상수를 갖는 금속 산화물인 제1의 1차 유전체 층, 및 (b) 상기 제1의 유전체 층상에 제공되어 있는 제1의 2차 유전체 층을 포함하는, 반도체 기판상에 제공된 유전체 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930012268A 1992-07-02 1993-07-01 반도체 디바이스용 유전체 구조 및 그 제조방법 KR100267440B1 (ko)

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