KR20080088563A - 전자선, 극자외선 또는 엑스선용 레지스트 조성물 - Google Patents
전자선, 극자외선 또는 엑스선용 레지스트 조성물 Download PDFInfo
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- KR20080088563A KR20080088563A KR1020080090814A KR20080090814A KR20080088563A KR 20080088563 A KR20080088563 A KR 20080088563A KR 1020080090814 A KR1020080090814 A KR 1020080090814A KR 20080090814 A KR20080090814 A KR 20080090814A KR 20080088563 A KR20080088563 A KR 20080088563A
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
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- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
- Y10S430/121—Nitrogen in heterocyclic ring
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- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
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- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
EUV 평가 | |||
실시예 | 조성물 | 감도(mJ/㎠) | γ값 |
137 | 실시예 101 | 3.0 | 9.5 |
138 | 실시예 102 | 2.0 | 10.5 |
비교예 111 | 비교예 101 | >5.0 | 6.5 |
Claims (9)
- (A1)-0.78V 보다 높은 환원전위를 가지며, 활성광선 또는 방사선의 조사에 의해 산을 발생하는 화합물, (BN)알칼리 가용성 수지 및 (C)산의 작용에 의해 가교하는 가교제를 함유하는 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.
- 제1항에 있어서, (A1)-0.78V 보다 높은 환원전위를 가지며, 활성광선 또는 방사선의 조사에 의해 산을 발생하는 화합물이 하기 일반식(1), (2) 또는 (3)으로 표시되는 화합물인 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.(식중, Y는 치환기를 갖고 있어도 좋은 아릴기 또는 치환기를 갖고 있어도 좋은 알킬기를 나타내고; R1a~R8a는 각각 독립적으로 수소원자, 할로겐원자, 니트로기, 시아노기, 카르복실기, 치환기를 갖고 있어도 좋은 알킬기 또는 치환기를 갖고 있어도 좋은 시클로알킬기를 나타내고; R1~R15는 각각 독립적으로 수소원자, 니트로기, 시아노기 또는 트리플루오로메틸기를 나타내고, 단 R1~R15 중 2개 이상은 니트로기, 시아노기 및 트리플루오로메틸기에서 선택되는 기이고; R16~R27는 각각 독립적으로 수소원자, 니트로기, 시아노기, 트리플루오로메틸기 또는 할로겐원자를 나타내고; y는 0 또는 1을 나타내며; X-는 불소원자, 1개 이상의 불소원자로 치환된 알킬기, 1 개 이상의 불소원자로 치환된 알콕시기, 1개 이상의 불소원자로 치환된 아실기, 1개 이상의 불소원자로 치환된 아실옥시기, 1개 이상의 불소원자로 치환된 술포닐기, 1개 이상의 불소원자로 치환된 술포닐옥시기, 1개 이상의 불소원자로 치환된 술포닐아미노기, 1개 이상의 불소원자로 치환된 아릴기, 1개 이상의 불소원자로 치환된 아랄킬기 및 1개 이상의 불소원자로 치환된 알콕시카르보닐기에서 선택되는 1종 이상을 갖는, 알킬술폰산, 벤젠술폰산, 나프탈렌술폰산 또는 안트라센술폰산의 음이온을 나타낸다)
- 제1항에 있어서, (A2)활성광선 또는 방사선의 조사에 의해 산을 발생하고, 하기 일반식(I)~(III) 중 어느 하나로 표시되는 구조를 갖는 화합물을 더 함유하는 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.(식중, R1~R37은 같거나 달라도 좋고, 각각은 수소원자, 직쇄상, 분기상 또는 환상 알킬기, 직쇄상, 분기상 또는 환상 알콕시기, 히드록시기, 할로겐원자 또는 -S-R38기를 나타내고; R38은 직쇄상, 분기상 또는 환상 알킬기 또는 아릴기를 나타내며; X-는 불소원자, 1개 이상의 불소원자로 치환된 직쇄상, 분기상 또는 환상 알킬기, 1 개 이상의 불소원자로 치환된 직쇄상, 분기상 또는 환상 알콕시기, 1개 이상의 불소원자로 치환된 아실기, 1개 이상의 불소원자로 치환된 아실옥시기, 1개 이상의 불소원자로 치환된 술포닐기, 1개 이상의 불소원자로 치환된 술포닐옥시기, 1개 이상의 불소원자로 치환된 술포닐아미노기, 1개 이상의 불소원자로 치환된 아릴기, 1개 이상의 불소원자로 치환된 아랄킬기 및 1개 이상의 불소원자로 치환된 알콕시카르보닐기에서 선택되는 1종 이상을 갖는, 알킬술폰산, 벤젠술폰산, 나프탈렌술폰산 또는 안트라센술폰산의 음이온을 나타낸다)
- 제1항에 있어서, (A3)활성광선 또는 방사선의 조사에 의해 불소원자 함유 카르복실산을 발생하는 화합물 및 (A4)활성광선 또는 방사선의 조사에 의해 불소원자 비함유 카르복실산을 발생하는 화합물에서 선택되는 1종 이상의 화합물을 더 함유하는 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.
- 제1항에 있어서, 상기 (C)산의 작용에 의해 가교하는 가교제는 분자 당 벤젠환 1~6개를 갖고, 그 벤젠환 중 어느 하나에 2개 이상의 히드록시메틸기 및/또는 알콕시메틸기가 결합되어 있는 페놀 유도체 중에서 선택되는 화합물인 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.
- 제1항에 있어서, 상기 (BN)의 알칼리 가용성 수지는 하기 일반식(a)으로 표 시되는 반복단위를 함유하는 수지인 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.(식중, R1은 수소원자, 할로겐원자, 시아노기, 치환기를 갖고 있어도 좋은 알킬기 또는 치환기를 갖고 있어도 좋은 할로알킬기를 나타내고; R2는 수소원자, 치환기를 갖고 있어도 좋은 알킬기, 치환기를 갖고 있어도 좋은 시클로알킬기, 치환기를 갖고 있어도 좋은 아릴기, 치환기를 갖고 있어도 좋은 아랄킬기 또는 치환기를 갖고 있어도 좋은 아실기를 나타내고; R3 및 R4는 같거나 달라도 좋고, 각각은 수소원자, 할로겐원자, 시아노기, 치환기를 갖고 있어도 좋은 알킬기, 치환기를 갖고 있어도 좋은 시클로알킬기, 치환기를 갖고 있어도 좋은 알케닐기, 치환기를 갖고 있어도 좋은 아랄킬기 또는 치환기를 갖고 있어도 좋은 아릴기를 나타내고; A는 단결합, 치환기를 갖고 있어도 좋은 알킬렌기, 치환기를 갖고 있어도 좋은 알케닐렌기, 치환기를 갖고 있어도 좋은 시클로알킬렌기, 치환기를 갖고 있어도 좋은 아릴렌기, -O-, -SO2-, -O-CO-R5-, -CO-O-R6- 또는 -CO-N(R7)-R8-을 나타내고; R5, R6 및 R8은 같거나 달라도 좋고, 각각은 단결합, 치환기를 갖고 있어도 좋은 알킬렌기, 치환기 를 갖고 있어도 좋은 알케닐렌기, 치환기를 갖고 있어도 좋은 시클로알킬렌기, 치환기를 갖고 있어도 좋은 아릴렌기, 상기 알킬렌기, 알케닐렌기, 시클로알킬렌기 또는 아릴렌기와 에테르구조, 에스테르구조, 아미도구조, 우레탄구조 및 우레이도구조에서 선택되는 1종 이상이 결합함으로써 형성된 2가의 기를 나타내고; R7은 수소원자, 치환기를 갖고 있어도 좋은 알킬기, 치환기를 갖고 있어도 좋은 시클로알킬기, 치환기를 갖고 있어도 좋은 아랄킬기 또는 치환기를 갖고 있어도 좋은 아릴기를 나타내고; n은 1∼3의 정수를 나타내고; 또는 복수의 R2, R2와 R3, 또는 R2와 R4가 서로 결합하여 환을 형성하여도 좋다)
- 제1항에 있어서, 하기 일반식(A), (B), (C), (D) 또는 (E)로 표시되는 구조를 함유하는 유기염기성 화합물을 더 함유하는 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.(식중, R250, R251 및 R252은 같거나 또는 달라도 좋고, 각각은 수소원자, 탄소수 1~6개의 알킬기, 탄소수 1~6개의 아미노알킬기, 탄소수 1~6개의 히드록시알킬기 또는 탄소수 6~20개의 치환 또는 미치환의 아릴기를 나타내고, 또는 R251과 R252이 서로 결합하여 환을 형성하여도 좋으며; R253, R254 , R 255 및 R256은 같거나 또는 달라도 좋고, 각각은 탄소수 1~6개의 알킬기를 나타낸다)
- 제1항에 있어서, 불소계 및/또는 실리콘계 계면활성제를 더 포함하는 것을 특징으로 하는 전자선, EUV 또는 X선용 네거티브 레지스트 조성물.
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2003
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- 2003-02-12 KR KR1020030008691A patent/KR100890739B1/ko active IP Right Grant
- 2003-02-12 EP EP12153033A patent/EP2477073A1/en not_active Withdrawn
- 2003-02-12 EP EP03002684A patent/EP1338921A3/en not_active Withdrawn
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101440941B1 (ko) * | 2007-08-03 | 2014-09-17 | 후지필름 가부시키가이샤 | 신규의 술포늄 화합물을 함유하는 레지스트 조성물, 그 레지스트 조성물을 사용한 패턴 형성 방법, 및 신규의 술포늄 화합물 |
Also Published As
Publication number | Publication date |
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KR100931616B1 (ko) | 2009-12-14 |
EP2477073A1 (en) | 2012-07-18 |
US7521168B2 (en) | 2009-04-21 |
US20030198894A1 (en) | 2003-10-23 |
EP1338921A3 (en) | 2007-12-12 |
EP1338921A2 (en) | 2003-08-27 |
KR100890739B1 (ko) | 2009-03-26 |
KR20030080195A (ko) | 2003-10-11 |
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