KR20050085600A - 에피택시용 기판 및 그 제조방법 - Google Patents
에피택시용 기판 및 그 제조방법 Download PDFInfo
- Publication number
- KR20050085600A KR20050085600A KR1020057010733A KR20057010733A KR20050085600A KR 20050085600 A KR20050085600 A KR 20050085600A KR 1020057010733 A KR1020057010733 A KR 1020057010733A KR 20057010733 A KR20057010733 A KR 20057010733A KR 20050085600 A KR20050085600 A KR 20050085600A
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- South Korea
- Prior art keywords
- substrate
- layer
- gallium
- nitride
- electronic device
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- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims description 103
- 238000000407 epitaxy Methods 0.000 title abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 134
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 24
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 16
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 11
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract 3
- 229910052733 gallium Inorganic materials 0.000 claims description 127
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 110
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 95
- 229910052782 aluminium Inorganic materials 0.000 claims description 90
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 75
- 239000013078 crystal Substances 0.000 claims description 57
- 238000002425 crystallisation Methods 0.000 claims description 53
- 230000008025 crystallization Effects 0.000 claims description 52
- 229910021529 ammonia Inorganic materials 0.000 claims description 46
- 239000002904 solvent Substances 0.000 claims description 34
- 230000005693 optoelectronics Effects 0.000 claims description 27
- 229910052783 alkali metal Inorganic materials 0.000 claims description 20
- 150000001340 alkali metals Chemical group 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 101
- 229910002601 GaN Inorganic materials 0.000 description 54
- 238000004090 dissolution Methods 0.000 description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 239000000126 substance Substances 0.000 description 16
- 229910001413 alkali metal ion Inorganic materials 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000012071 phase Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 150000002259 gallium compounds Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 150000001408 amides Chemical class 0.000 description 4
- 150000001540 azides Chemical class 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- -1 amidimides Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000010956 selective crystallization Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007716 flux method Methods 0.000 description 2
- 150000002258 gallium Chemical class 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZFFBIQMNKOJDJE-UHFFFAOYSA-N 2-bromo-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Br)C(=O)C1=CC=CC=C1 ZFFBIQMNKOJDJE-UHFFFAOYSA-N 0.000 description 1
- 101150061900 Ambn gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910021295 PNCl2 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Abstract
Description
Claims (21)
- 기상 에피택시 성장에 의해 성장된 질화물층을 포함하는 광전자 소자 또는 전자 소자에 사용되는 기판으로서,상기 질화물 기판의 양쪽 주요표면은 각각 실질적으로 비(非)N극면(non N-polar face) 및 N극면으로 이루어지며, 상기 기판의 전위밀도는 5×105/㎠ 이하인, 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,상기 질화물 기판의 전위밀도는 105/㎠ 이하인 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,상기 질화물 기판의 전위밀도는 104/㎠ 이하인 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,기상 에피택시 성장에 의해 성장된 질화물 층(B)은 일반식 AlxGa1-x-yInyN(0≤x≤1, 0≤y≤1, 0≤x+y≤1)으로 표시되는 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,질화물 층(B)은 일반식 AlxGa1 - xN(0≤x≤1)으로 표시되는 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,적어도 하나의 알칼리금속(Group I, IUPAC 1989) 성분을 함유하는 벌크 단결정 질화물 층(A), MOCVD 또는 MBE에 의해 성장된 질화물 층(B1) 및 HVPE에 의해 성장된 갈륨함유 질화물 층(B2)의 조합 층에서 층(B2)의 일부로부터 잘라내진, 100㎛ 이상, 바람직하게는 150㎛ 이상의 두께를 가진 기판을 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,적어도 하나의 알칼리금속(Group I, IUPAC 1989) 성분을 함유하는 벌크 단결정 질화물 층(A1), 기상 에피택시 성장에 의해 성장된 질화물 층(B), 적어도 하나의 알칼리금속(Group I, IUPAC 1989) 성분을 함유하는 벌크 단결정 질화물 층(A2), MOCVD 또는 MBE에 의해 성장된 질화물 층(C1) 및 HVPE에 의해 성장된 갈륨함유 질화물 층(C2)의 조합 층에서 층(C2)의 일부로부터 잘라내진, 100㎛ 이상, 바람직하게는 150㎛ 이상의 두께를 가진 기판을 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,상기 기판은 도너 도펀트(donor dopant)로서 규소(Si) 또는 산소(O)를 함유하는 갈륨함유 질화물인 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 1 항에 있어서,상기 기판은 억셉터 도펀트(acceptor dopant)로서 마그네슘(Mg) 또는 아연(Zn)을 함유하는 갈륨함유 질화물인 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 제 8 항 또는 제 9 항에 있어서,상기 도펀트의 농도는 1016/㎤∼1021/㎤ 범위인 것을 특징으로 하는 광전자 소자 또는 전자 소자에 사용되는 기판.
- 광전자 소자 또는 전자 소자용 기판의 제조방법으로서,(a) 초임계 암모니아함유 용액으로부터 시드 상의 갈륨 또는 알루미늄함유 질화물의 결정화에 의해 기판에 대해 두께를 가지도록 적어도 하나의 알칼리금속(Group I, IUPAC 1989) 성분을 함유하는 벌크 단결정 질화물 층(A)을 제조하는 단계;(b) 상기 층(A)의 Al 또는 Ga극면 상에 기상 에피택시 성장에 의해 질화물 층(B) 또는 (C)을 형성하는 단계; 및(c) 상기 기판(A)으로부터 상기 층(B) 또는 (C)을 잘라내어, 100㎛ 이상의 두께 및 실질적으로 Al 또는 Ga 극면으로 이루어진 주요표면을 가진 기판을 얻는 단계를 포함하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 단계(b)는 상기 층(A)의 Al 또는 Ga극면 상에 기상 에피택시 성장에 의해 질화물 층(B1) 또는 (C1)을 형성하는 단계(b1) 및 상기 층(B1) 또는 (C1) 상에 기상 에피택시 성장에 의해 질화물 층(B2) 또는 (C2)을 형성하는 단계(b2); 및(c) 상기 기판(A)으로부터 상기 층(B2) 또는 (C2)을 잘라내어, 100㎛ 이상의 두께 및 실질적으로 Al 또는 Ga 극면으로 이루어진 주요표면을 가진 기판을 얻는 단계를 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 상기 층(B), (C), (B2) 또는 (C2)의 Al 또는 Ga극면 상에 기상 에피택시 성장에 의해 질화물 층(D)을 형성하는 단계(d)를 더 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 상기 층(B), (C), (B2) 또는 (C2)의 Al 또는 Ga극면 상에 기상 에피택시 성장에 의해 질화물 층(D)을 형성하는 단계(d); 및상기 기판(B), (C), (B2) 또는 (C2)으로부터 상기 층(D)을 잘라내어, 100㎛ 이상의 두께 및 실질적으로 Al 또는 Ga 극면으로 이루어진 주요표면을 가진 기판을 얻는 단계(e)를 더 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 11 항 내지 제 14 항 중 어느 한 항에 있어서,상기 층(B), (B1), (C) 또는 (C1)은 MOCVD에 의해 제조되며, 0.1∼3㎛ 두께를 가지는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 15 항에 있어서,상기 층(B), (B2), (C) 또는 (C2)의 면 중 하나를 연마하여, 기상 에피택시용 기판을 얻는 단계를 더 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 11항 내지 제 16 항 중 어느 한 항에 있어서,수소를 함유하지 않고 약 600∼1050℃의 온도에서 유지되는 분위기에서, 상기 기판(B), (B2), (C) 또는 (C2)을 어닐링하여, 어닐링하기 이전 보다 양호한 결정 품질을 가진 물질을 제조하는 단계를 더 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 17 항에 있어서,상기 어닐링 단계는 10∼30vol.%의 산소가 첨가된 불활성 가스 분위기에서 수행되는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 17 항에 있어서,상기 어닐링 단계는 (결정화 및/또는 어닐링 공정 동안 형성된 불순물로부터 형성된 수소 및/또는 암모니아 또는 이온 등의) 불순물의 원하는 수준에 도달될 때까지 단일 단계 또는 다중 단계로 수행되는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 11 항 내지 제 19 항 중 어느 한 항에 있어서,초임계 암모니아함유 용매, 물 또는 이산화탄소의 환경에서의 세정공정에 의해 또는 기체상태의 수소, 질소 또는 암모니아의 작용이 수행되어 벌크 단결정 질화물로부터 불순물을 제거하는 단계를 더 포함하는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
- 제 20 항에 있어서,상기 세정공정은 초음파의 적용 또는 전자빔 노광에 의해 수행되는 것을 특징으로 하는 광전자 소자 또는 전자 소자용 기판의 제조방법.
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PL357696A PL225423B1 (pl) | 2002-12-11 | 2002-12-11 | Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal |
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PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
PL357707A PL225424B1 (pl) | 2002-12-11 | 2002-12-11 | Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101155061B1 (ko) * | 2006-03-22 | 2012-06-11 | 삼성코닝정밀소재 주식회사 | 질화물 반도체 기판 및 이의 제조방법 |
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