JP2006509710A - エピタキシ用基板及びその製造方法 - Google Patents
エピタキシ用基板及びその製造方法 Download PDFInfo
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- JP2006509710A JP2006509710A JP2004558483A JP2004558483A JP2006509710A JP 2006509710 A JP2006509710 A JP 2006509710A JP 2004558483 A JP2004558483 A JP 2004558483A JP 2004558483 A JP2004558483 A JP 2004558483A JP 2006509710 A JP2006509710 A JP 2006509710A
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- substrate
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- nitride
- gallium
- optoelectronics
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
少なくとも1種のアルカリ金属を含有する超臨界アンモニア溶液中で窒化物の結晶化により形成した層A)の濃度よりも低い。アルカリ金属の濃度は、層B)またはC)及び層B1)及びB2)またはC1)及びC2)を形成する工程中に、層A)からの拡散を生じさせるからである。この場合、層B)、B1)、C)またはC1)はMOCVD法により形成でき、好ましくは厚さが0.1から3μmである。
(a)超臨界アンモニア含有溶液からシード上にガリウムまたはアルミニウム含有窒化物を結晶させて、アルカリ金属(I族元素、IUPAC 1989)の少なくとも1種を含有する窒化物バルク単結晶の層A)を基板のための膜厚をもたせて形成し、
(b)気相エピタキシャル成長法により、層A)のAlまたはGa極性面上に窒化物の層B)またはC)を形成し、
(c)基板A)から層B)またはC)を切り出し、100μm以上の膜厚をもたせ、主面が実質的にAlまたはGa極性面を有する基板を得る工程を備える。
a)化合物AmBn:AがH+および/または金属、好ましくはアルカリ、NH4+、Si、S、Pであり、Bがハロゲン、S、P、ならびにnとmが1以上の化学量論係数に相当する。
b)化学種のグループ:
−S4N4,S2N2,SN,S4N2,S11N2,P3N5、P4N6,PN
−PN2−,PN34−,PC47−,PN−,PN2−
−PNC12,P(NH)2NH2,P4S10,NP(SNH4)2,NPSNH4SH,NP(SH)2,PNS
ガリウム含有窒化物の結晶格子で形成される硫黄またはシリコン種をドナーとして機能させ;マグネシウム、亜鉛またはカドミウムをアクセプターとし;窒化ガリウム結晶格子において、マンガンまたはクロムといった添加物が磁性特性を付与し;蛍光体原子が窒素原子に対して等電子となり、エネルギーギャップは純粋なガリウム含有窒化物でのエネルギーギャップより狭くなる。これらの化学種は超臨界溶媒のアンモノ塩基性を損い、ガリウム含有窒化物の光学的、電気的、磁性的特性を変化させる。
アルミニウム含有フィードストックの溶解にも、類似の定義が適用される。
本発明の方法を行うにあたり、図3および図4に示す装置を用いるのが好ましい。詳細を以下に示す。
上記の方法および装置により、ガリウムまたはアルミニウム含有窒化物バルク単結晶を形成できる。バルク単結晶は低い欠陥密度を示す(バルクGaNの場合:104/cm2)バルク単結晶GaNは内径が1インチ以上、同時に、3mm以上(好ましくは5mm)の厚さを有することが重要である。単結晶をワイヤーソーでウエハに切断し、0.5mm厚のバルク単結晶基板を得る。バルク単結晶基板を後にシードとして用いることができる。n型導電性を改良するためには、気相成長中にSiをドープすることによりn型キャリア濃度を増加させるのが好ましい。ガリウムまたはアルミニウム含有窒化物を気相成長を用いて積層すれば、超臨界アンモニア中で形成するガリウムまたはアルミニウム含有窒化物がAlxGa1−xN(0≦x<1)を有するか、GaN上に積層したバルク単結晶AlxGa1−xN(0≦x<1)を用いるのが好ましい。ガリウムまたはアルミニウム含有窒化物の気相成長中にSiをドープすることにより、n型導電性を有するAlxGa1−x−yInyN、(0≦x≦1、0≦y<1、0≦x+y≦1)を形成でき、それを超臨界アンモニア中で、気相成長条件下でガリウムまたはアルミニウム含有窒化物上に結晶化させるので、高い結晶性及び105/cm2以下の欠陥密度を有するテンプレート型基板の形成に使用することができる。
本発明の方法においては、フィードストックの溶解工程と、超臨界溶液をより高温および/またはより低圧に輸送する工程とを分離でき、シードの表面にガリウムまたはアルミニウム含有窒化物の結晶化が生じる。さらに、該方法は、オートクレーブ中の異なる温度を有する少なくとも2つの領域を同時に形成する工程をそなえ、ガリウムまたはアルミニウム含有フィードストックをより低温の溶解領域に、シードをより高温の結晶化領域に配置する。溶解領域と結晶化領域間の温度差は1℃以上となるように制御し、超臨界溶液内での対流による化学輸送を確保する。超臨界アンモニア内で形成したガリウムまたはアルミニウム含有窒化物は、AlxGa1−xN、(0≦x<1)であり、ドナー型、アクセプター型、または磁気型の添加物を含有してもよく、一方、気相成長で形成したガリウムまたはアルミニウム含有窒化物は、AlxGa1−x−yInyN、(0≦x≦1、0≦y<1、0≦x+y≦1)である。
アルカリ金属イオンおよび/またはその誘導体を含んだアンモニアは超臨界溶媒として機能できる。フィードストックは主として、アジド類、イミド類、アミド−イミド類、アミド類、水素化物、金属間化合物およびガリウムまたはアルミニウム含有合金からなる群から選択されたガリウムまたはアルミニウム含有窒化物またはその前駆体と同様に、金属ガリウムからなる。シードは少なくともガリウムまたはアルミニウム含有窒化物または第XIII族(IUPAC, 1989)の他の元素の結晶層を備える。
半導体装置の適切な品質と寿命を確保できる。同時に、基板が導電性を有するので、n型パッド電極をその上に積層できる。
1)HVPE−GaNシード上に成長した5mmの単結晶の層を、加熱炉内に配置し、1〜5時間、600〜900℃、若干の酸素を含む窒素雰囲気で、アニール処理を行う。
2)次に、タカトリ(株)のワイヤーソーにサンプルを設置する。設置する際にはサンプルに結晶の主軸に適したオフ角を形成するため、1°以下傾けて設置する。その後ワイヤーソーを用いて5枚のウエハに切断し、0.05〜0.2度のオフ角のサンプルを得る。
3)次にサンプルを加熱炉内に設置し、1〜5時間、600〜900℃、若干の酸素を含む窒素雰囲気で、再度アニール処理を行う(以下、これをGaN基板と呼ぶ)。
4)次に、作業台上にGaN基板を載せ、ロジッテック社の研磨機にかけて、片面ずつ研磨する。研磨の行程においてはダイヤモンドツール及びシリカまたはアルミナスラリー溶液(pH3〜6またはpH9〜11)を用い、最終面10オングストローム以下の粗さに仕上げる。
5)その後、HVPE法またはMOCVD法にてGaN基板表面に(1〜数μm厚の)GaNまたはAlGaNの保護層を加え、テンプレート型基板を得る。
6)あるいは、上記保護層を備えるGaN基板上、または同保護層を備えないGaN基板上のいずれかに、3mm厚のGaN層を以下に示す一定条件の下でHVPE法により形成する。上記種々の方法を用いて切断、研磨した後、0.5mm厚のテンプレート型基板が形成され、オプトエレクトロニクス機器に使用される。HVPE条件は以下の通りである:反応温度:1050℃、反応圧力:気圧(0.1Mpa)、アンモニア分圧0.03Mpa、GaCl3分圧:100Pa、水素キャリアガス。
7)GaNまたはAlGaNにかわり、SiCまたはZnOからなる別の保護層をGaN基板上に形成でき、さらに3mm厚のGaN層をHVPE法を用いて形成できる。
Claims (21)
- 気相エピタキシャル成長法により形成した窒化物の層を備え、窒化物基板の両主面が実質的にそれぞれ非N極性面とN極性面からなり、基板の欠陥密度が5×105/cm2以下である、オプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 窒化物基板の欠陥密度が5×105/cm2以下であることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 窒化物基板の欠陥密度が5×104/cm2以下であることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 気相エピタキシャル成長法で形成した窒化物の層B)が一般式AlxGa1−x−yInyN(0≦x≦1,0≦y≦1,0≦x+y≦1)で表されることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 窒化物の層B)が一般式AlxGa1−xN(0≦x≦1)で表されることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 少なくとも1種のアルカリ金属(族番号I、IUPAC1989)を含有する窒化物バルク単結晶の層A)、MOCVD法またはMBE法で形成される窒化物の層B1)及びHVPE法で形成されるガリウム含有窒化物の層B2)の組み合わせの層B2)の一部から切り出され、100μm以上、好ましくは150μm以上の厚さである基板を有することを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 少なくとも1種のアルカリ金属(族番号I、IUPAC1989)を含有する窒化物バルク単結晶の層A1)、気相エピタキシャル成長法により形成した窒化物の層B)、少なくとも1種のアルカリ金属(族番号I、IUPAC1989)を含有する窒化物バルク単結晶の層A2)、MOCVD法またはMBE法で形成される窒化物の層C1)、及びHVPE法で形成されるガリウム含有窒化物の層C2)の組み合わせの層C2)の一部から切り出され、100μm以上、好ましくは150μm以上の厚さである基板有することを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 基板がドナー添加物としてシリコン(Si)または酸素(O)を含有するガリウム含有窒化物であることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 基板アクセプター添加物としてマグネシウム(Mg)または亜鉛(Zn)を含有するガリウム含有窒化物であることを特徴とする請求項1記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- 添加物の濃度が1016/cm3から1021/cm3の範囲であることを特徴とする請求項8または9に記載のオプトエレクトロニクスまたはエレクトロニクス機器用の基板。
- オプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法であって、
(a)超臨界アンモニア含有溶液からシード上にガリウムまたはアルミニウム含有窒化物を結晶させて、アルカリ金属(I族元素、IUPAC 1989)の少なくとも1種を含有する窒化物バルク単結晶の層A)を、基板のための膜厚をもたせて形成し、
(b)気相エピタキシャル成長法により、層A)のAlまたはGa極性面上に窒化物の層B)またはC)を形成し、
(c)基板A)から層B)またはC)を切り出し、基板に100μm以上の膜厚をもたせ、主面が実質的にAlまたはGa極性面を有する基板を形成する工程を備えることを特徴とする製造方法。 - オプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法であって、工程(b)において、(b1)窒化物の層B1)またはC1)を気相エピタキシャル成長法により、層A)のAlまたはGa極性面上に形成し、(b2)窒化物の層B2)またはC2)を気相エピタキシャル成長法により、層B1)またはC1)上に形成し、
(c)基板A)から層B2)またはC2)を切り出し、100μm以上の膜厚をもたせ、主面が実質的にAlまたはGa極性面を有する基板を形成する工程を備えることを特徴とする製造方法。 - オプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法であって、(d)層B)、C)、B2)またはC2)のAlまたはGa極性面上に気相エピタキシャル成長法により形成した窒化物の層D)を形成する工程をさらに備えることを特徴とする製造方法。
- オプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法であって、(d)層B)、C)、B2)またはC2)のAlまたはGa極性面上に気相エピタキシャル成長法により形成した窒化物の層D)を形成し、
(e)基板B)、C)、B2)またはC2)から層D)を切り出し、100μm以上の膜厚をもたせ、主面が実質的にAlまたはGa極性面を有する基板を形成する工程をさらに備えることを特徴とする製造方法。 - 層B)、B1)、C)またはC1)がMOCVD法により形成され、膜厚が0.1から3μmであることを特徴とする請求項11から14のいずれかに記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- 層B)、B2)、C)またはC2)の1つの表面を研磨し、気相エピタキシャル成長用の基板を得る工程をさらに備えることを特徴とする請求項15に記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- 水素を含有しない空気中で、約600℃から1050℃の温度で基板B)、B2)、C)またはC2)をアニーリング処理し、アニーリング処理前よりもより良好な結晶性を有する材料を製造する工程をさらに備えることを特徴とする請求項11から16のいずれかに記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- アニーリング工程を10から30Vol.%の酸素を添加した不活性ガスの空気中で行うことを特徴とする請求項17に記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- 不純物(水素および/またはアンモニアまたは結晶および/またはアニーリング処理中に生じた不純物から形成されたイオン)が望ましいレベルに達するまで、アニーリング工程を単一工程または複数の工程で行うことを特徴とする請求項17に記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- アンモニア含有溶媒、水または二酸化炭素の超臨界環境下に浸漬、またはガス状水素、窒素またはアンモニアの作用下に付し、窒化物バルク単結晶から不純物を除去する工程をさらに備えることを特徴とする請求項11から19のいずれかに記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
- 洗浄工程で超音波または電子ビーム照射を補助的に用いることを特徴とする請求項20に記載のオプトエレクトロニクスまたはエレクトロニクス機器のための基板の製造方法。
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PL357707A PL225424B1 (pl) | 2002-12-11 | 2002-12-11 | Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal |
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PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008047637A1 (fr) | 2006-10-16 | 2008-04-24 | Mitsubishi Chemical Corporation | Procédé de fabrication d'un semiconducteur à base de nitrure, agent d'augmentation de la vitesse de croissance cristalline, monocristal de nitrure, tranche et dispositif |
WO2008078672A1 (ja) * | 2006-12-26 | 2008-07-03 | Sharp Kabushiki Kaisha | 窒化物半導体発光素子 |
JP2011509231A (ja) * | 2008-02-25 | 2011-03-24 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物ウエハを製造する方法およびiii族窒化物ウエハ |
JP2013159547A (ja) * | 2012-02-08 | 2013-08-19 | Toyoda Gosei Co Ltd | Iii族窒化物半導体結晶の製造方法 |
JP2014027092A (ja) * | 2012-07-26 | 2014-02-06 | Sharp Corp | 半導体発光素子 |
JP2015187043A (ja) * | 2014-03-26 | 2015-10-29 | 日亜化学工業株式会社 | 窒化物半導体基板の製造方法 |
US9673046B2 (en) | 2012-12-17 | 2017-06-06 | Mitsubishi Chemical Corporation | Gallium nitride substrate and manufacturing method of nitride semiconductor crystal |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4116535B2 (ja) * | 2001-06-06 | 2008-07-09 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物の単結晶の製造法及び装置 |
KR100679387B1 (ko) * | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | 질화물 반도체 레이저 소자 및 이의 제조방법 |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
AU2002354467A1 (en) * | 2002-05-17 | 2003-12-02 | Ammono Sp.Zo.O. | Light emitting element structure having nitride bulk single crystal layer |
US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
EP1581675B1 (en) | 2002-12-11 | 2009-10-14 | AMMONO Sp. z o.o. | A template type substrate and a method of preparing the same |
TWI334890B (en) * | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
US7351994B2 (en) * | 2004-01-21 | 2008-04-01 | Taiwan Semiconductor Manufacturing Company | Noble high-k device |
WO2005121415A1 (en) | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Bulk mono-crystalline gallium-containing nitride and its application |
PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
US7772601B2 (en) * | 2005-02-04 | 2010-08-10 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
JP4563230B2 (ja) | 2005-03-28 | 2010-10-13 | 昭和電工株式会社 | AlGaN基板の製造方法 |
US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
JP4277826B2 (ja) * | 2005-06-23 | 2009-06-10 | 住友電気工業株式会社 | 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
WO2007006001A2 (en) | 2005-07-06 | 2007-01-11 | International Rectifier Corporation | Iii-nitride enhancement mode devices |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
EP1775356A3 (en) * | 2005-10-14 | 2009-12-16 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
US8349077B2 (en) * | 2005-11-28 | 2013-01-08 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
JP5281408B2 (ja) * | 2005-12-02 | 2013-09-04 | クリスタル・イズ,インコーポレイテッド | ドープされた窒化アルミニウム結晶及びそれを製造する方法 |
CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
JP2007277074A (ja) * | 2006-01-10 | 2007-10-25 | Ngk Insulators Ltd | 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶 |
KR100714629B1 (ko) * | 2006-03-17 | 2007-05-07 | 삼성전기주식회사 | 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법 |
KR101155061B1 (ko) * | 2006-03-22 | 2012-06-11 | 삼성코닝정밀소재 주식회사 | 질화물 반도체 기판 및 이의 제조방법 |
CN101454487B (zh) * | 2006-03-30 | 2013-01-23 | 晶体公司 | 氮化铝块状晶体的可控掺杂方法 |
US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
EP2004882A2 (en) * | 2006-04-07 | 2008-12-24 | The Regents of the University of California | Growing large surface area gallium nitride crystals |
US20100095882A1 (en) * | 2008-10-16 | 2010-04-22 | Tadao Hashimoto | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
US8728234B2 (en) * | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
WO2007149487A2 (en) * | 2006-06-21 | 2007-12-27 | The Regents Of The University Of California | Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
JP5125098B2 (ja) * | 2006-12-26 | 2013-01-23 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
WO2008088838A1 (en) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
JP2008308401A (ja) | 2007-05-17 | 2008-12-25 | Mitsubishi Chemicals Corp | Iii族窒化物半導体結晶の製造方法、iii族窒化物半導体基板および半導体発光デバイス |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
WO2009039398A1 (en) | 2007-09-19 | 2009-03-26 | The Regents Of The University Of California | Gallium nitride bulk crystals and their growth method |
CN101939849A (zh) | 2008-02-08 | 2011-01-05 | 伊鲁米特克有限公司 | 用于发射器层成形的系统和方法 |
WO2009146382A1 (en) * | 2008-05-28 | 2009-12-03 | The Regents Of The University Of California | Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same |
EP3330413B1 (en) | 2008-06-04 | 2020-09-09 | SixPoint Materials, Inc. | Method of growing group iii nitride crystals using high-pressure vessel |
WO2009151642A1 (en) * | 2008-06-12 | 2009-12-17 | Sixpoint Materials, Inc. | Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
JP5177084B2 (ja) * | 2008-08-06 | 2013-04-03 | 住友電気工業株式会社 | 波長変換素子および波長変換素子の製造方法 |
KR20110097813A (ko) * | 2008-11-07 | 2011-08-31 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Ⅲ족 질화물 결정들의 암모노열 성장을 위한 신규한 용기 설계 및 소스 물질과 씨드 결정들의 상기 용기에 대한 상대적인 배치 |
WO2010060034A1 (en) * | 2008-11-24 | 2010-05-27 | Sixpoint Materials, Inc. | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
JP4867981B2 (ja) * | 2008-12-04 | 2012-02-01 | 住友電気工業株式会社 | GaN結晶の成長方法 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
WO2010129718A2 (en) | 2009-05-05 | 2010-11-11 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
JP5310534B2 (ja) | 2009-12-25 | 2013-10-09 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法 |
WO2011108640A1 (ja) * | 2010-03-04 | 2011-09-09 | Jx日鉱日石金属株式会社 | 結晶成長装置、窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体結晶 |
PL224995B1 (pl) | 2010-04-06 | 2017-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Podłoże do wzrostu epitaksjalnego |
WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US9082948B2 (en) | 2011-02-03 | 2015-07-14 | Soitec | Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods |
US9142412B2 (en) | 2011-02-03 | 2015-09-22 | Soitec | Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods |
US8436363B2 (en) | 2011-02-03 | 2013-05-07 | Soitec | Metallic carrier for layer transfer and methods for forming the same |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US8960657B2 (en) | 2011-10-05 | 2015-02-24 | Sunedison, Inc. | Systems and methods for connecting an ingot to a wire saw |
JP5888208B2 (ja) * | 2011-11-18 | 2016-03-16 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
CN103243389B (zh) * | 2012-02-08 | 2016-06-08 | 丰田合成株式会社 | 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法 |
EP2973664B1 (en) | 2013-03-15 | 2020-10-14 | Crystal Is, Inc. | Ultraviolet light-emitting device and method of forming a contact to an ultraviolet light-emitting device |
JP5999443B2 (ja) | 2013-06-07 | 2016-09-28 | 豊田合成株式会社 | III 族窒化物半導体結晶の製造方法およびGaN基板の製造方法 |
JP6015566B2 (ja) | 2013-06-11 | 2016-10-26 | 豊田合成株式会社 | III 族窒化物半導体のエッチング方法およびIII 族窒化物半導体結晶の製造方法およびGaN基板の製造方法 |
JP6516738B2 (ja) | 2013-07-11 | 2019-05-22 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ |
JP2015115343A (ja) * | 2013-12-09 | 2015-06-22 | シャープ株式会社 | 窒化物半導体素子の製造方法 |
CN108023001B (zh) * | 2017-11-30 | 2020-03-10 | 武汉大学 | 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法 |
US11087975B1 (en) * | 2018-07-02 | 2021-08-10 | United States Of America As Represented By The Secretary Of The Air Force | Method for fabrication of orientation-patterned templates on common substrates |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004845A1 (en) * | 1993-08-10 | 1995-02-16 | Centrum Badan Wysokocisnieniowych | Crystalline multilayer structure and manufacturing method thereof |
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
FR2796657A1 (fr) * | 1999-07-20 | 2001-01-26 | Thomson Csf | Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique |
JP2001185718A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Cable Ltd | 窒化ガリウム系化合物半導体を用いた高電子移動度トランジスタ用エピタキシャルウェハの製造方法 |
JP2002029897A (ja) * | 2000-07-10 | 2002-01-29 | Sumitomo Electric Ind Ltd | 単結晶GaN基板の製造方法と単結晶GaN基板 |
Family Cites Families (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922703A (en) * | 1974-04-03 | 1975-11-25 | Rca Corp | Electroluminescent semiconductor device |
FR2514566A1 (fr) * | 1982-02-02 | 1983-04-15 | Bagratishvili Givi | Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif |
JPS6065798A (ja) | 1983-09-19 | 1985-04-15 | Toyota Central Res & Dev Lab Inc | 窒化ガリウム単結晶の成長方法 |
CN1014535B (zh) | 1988-12-30 | 1991-10-30 | 中国科学院物理研究所 | 利用改进的矿化剂生长磷酸钛氧钾单晶的方法 |
US5096860A (en) | 1990-05-25 | 1992-03-17 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
KR920004181B1 (ko) | 1990-09-13 | 1992-05-30 | 한국과학기술연구원 | 입방정질화붕소의 제조방법 |
US5190738A (en) | 1991-06-17 | 1993-03-02 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
US5306662A (en) | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
US5456204A (en) | 1993-05-28 | 1995-10-10 | Alfa Quartz, C.A. | Filtering flow guide for hydrothermal crystal growth |
GB9412849D0 (en) * | 1993-08-02 | 1994-08-17 | Marketing Store Ltd | Package |
CA2169927A1 (en) | 1993-09-17 | 1995-03-23 | Kevin Brown | Pre-rinse for phosphating metal surfaces |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
WO1995027815A1 (fr) | 1994-04-08 | 1995-10-19 | Japan Energy Corporation | Procede de tirage d'un cristal semi-conducteur constitue par un compose de nitrure de gallium et dispositif semi-conducteur a composes de nitrure de gallium |
US5599520A (en) | 1994-11-03 | 1997-02-04 | Garces; Juan M. | Synthesis of crystalline porous solids in ammonia |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5679965A (en) | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
JP3728332B2 (ja) | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
WO1997008759A1 (fr) | 1995-08-31 | 1997-03-06 | Kabushiki Kaisha Toshiba | Dispositif emetteur de lumiere bleue et son procede de fabrication |
EP1081818B1 (en) | 1995-09-18 | 2004-08-18 | Hitachi, Ltd. | Semiconductor laser devices |
JP3563869B2 (ja) * | 1996-03-25 | 2004-09-08 | トヨタ自動車株式会社 | エンジン出力制御装置 |
CN1065289C (zh) | 1996-07-22 | 2001-05-02 | 中国科学院物理研究所 | 一种制备掺杂钒酸盐单晶的水热生长方法 |
JP3179346B2 (ja) | 1996-08-27 | 2001-06-25 | 松下電子工業株式会社 | 窒化ガリウム結晶の製造方法 |
JPH1084161A (ja) | 1996-09-06 | 1998-03-31 | Sumitomo Electric Ind Ltd | 半導体レーザ及びその製造方法 |
US6031858A (en) | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
WO1998019375A1 (fr) | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
US6177292B1 (en) | 1996-12-05 | 2001-01-23 | Lg Electronics Inc. | Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
CN100485984C (zh) | 1997-01-09 | 2009-05-06 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US5868837A (en) | 1997-01-17 | 1999-02-09 | Cornell Research Foundation, Inc. | Low temperature method of preparing GaN single crystals |
PL184902B1 (pl) | 1997-04-04 | 2003-01-31 | Centrum Badan Wysokocisnieniowych Pan | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
JP3491492B2 (ja) | 1997-04-09 | 2004-01-26 | 松下電器産業株式会社 | 窒化ガリウム結晶の製造方法 |
WO1998047170A1 (en) | 1997-04-11 | 1998-10-22 | Nichia Chemical Industries, Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
US5888389A (en) | 1997-04-24 | 1999-03-30 | Hydroprocessing, L.L.C. | Apparatus for oxidizing undigested wastewater sludges |
PL183687B1 (pl) | 1997-06-06 | 2002-06-28 | Centrum Badan | Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n |
TW519551B (en) | 1997-06-11 | 2003-02-01 | Hitachi Cable | Methods of fabricating nitride crystals and nitride crystals obtained therefrom |
GB2333521B (en) | 1997-06-11 | 2000-04-26 | Hitachi Cable | Nitride crystal growth method |
US6270569B1 (en) | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
US6593589B1 (en) | 1998-01-30 | 2003-07-15 | The University Of New Mexico | Semiconductor nitride structures |
US6249534B1 (en) | 1998-04-06 | 2001-06-19 | Matsushita Electronics Corporation | Nitride semiconductor laser device |
JPH11340576A (ja) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
TW428331B (en) | 1998-05-28 | 2001-04-01 | Sumitomo Electric Industries | Gallium nitride single crystal substrate and method of producing the same |
JP4005701B2 (ja) * | 1998-06-24 | 2007-11-14 | シャープ株式会社 | 窒素化合物半導体膜の形成方法および窒素化合物半導体素子 |
JP2000031533A (ja) | 1998-07-14 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
TW413956B (en) | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
US6335546B1 (en) * | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
JP2000091637A (ja) * | 1998-09-07 | 2000-03-31 | Rohm Co Ltd | 半導体発光素子の製法 |
US6423984B1 (en) | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
US6252261B1 (en) | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
EP1003227B1 (en) * | 1998-11-06 | 2010-01-13 | Panasonic Corporation | Semiconductor device |
TW498102B (en) | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
US6372041B1 (en) | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
US20020096674A1 (en) * | 1999-01-08 | 2002-07-25 | Cho Hak Dong | Nucleation layer growth and lift-up of process for GaN wafer |
JP2000216494A (ja) | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | 半導体発光素子およびその製造方法 |
EP1024524A2 (en) | 1999-01-27 | 2000-08-02 | Matsushita Electric Industrial Co., Ltd. | Deposition of dielectric layers using supercritical CO2 |
US6177057B1 (en) | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
JP3399392B2 (ja) * | 1999-02-19 | 2003-04-21 | 株式会社村田製作所 | 半導体発光素子、およびその製造方法 |
ATE452445T1 (de) | 1999-03-04 | 2010-01-15 | Nichia Corp | Nitridhalbleiterlaserelement |
JP3957918B2 (ja) | 1999-05-17 | 2007-08-15 | 独立行政法人科学技術振興機構 | 窒化ガリウム単結晶の育成方法 |
US6592663B1 (en) | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
EP1065299A3 (en) | 1999-06-30 | 2006-02-15 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
JP4329229B2 (ja) | 1999-06-30 | 2009-09-09 | 住友電気工業株式会社 | Iii−v族窒化物半導体の成長方法および気相成長装置 |
JP3968920B2 (ja) | 1999-08-10 | 2007-08-29 | 双葉電子工業株式会社 | 蛍光体 |
JP4646359B2 (ja) | 1999-09-09 | 2011-03-09 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
JP2001085737A (ja) | 1999-09-10 | 2001-03-30 | Sharp Corp | 窒化物半導体発光素子 |
US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
JP4145437B2 (ja) | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
CN1113988C (zh) | 1999-09-29 | 2003-07-09 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
EP1104031B1 (en) | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
US6653663B2 (en) | 1999-12-06 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor device |
JP2001168385A (ja) | 1999-12-06 | 2001-06-22 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体発光素子 |
US7315599B1 (en) | 1999-12-29 | 2008-01-01 | Intel Corporation | Skew correction circuit |
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
JP3335974B2 (ja) | 2000-01-24 | 2002-10-21 | 星和電機株式会社 | 窒化ガリウム系半導体発光素子及びその製造方法 |
US20010015437A1 (en) | 2000-01-25 | 2001-08-23 | Hirotatsu Ishii | GaN field-effect transistor, inverter device, and production processes therefor |
JP4429459B2 (ja) | 2000-03-03 | 2010-03-10 | 古河電気工業株式会社 | 高抵抗GaN結晶層の製造方法 |
US6596079B1 (en) | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
US6447604B1 (en) | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
JP3946427B2 (ja) | 2000-03-29 | 2007-07-18 | 株式会社東芝 | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
US6657232B2 (en) * | 2000-04-17 | 2003-12-02 | Virginia Commonwealth University | Defect reduction in GaN and related materials |
JP2001339121A (ja) | 2000-05-29 | 2001-12-07 | Sharp Corp | 窒化物半導体発光素子とそれを含む光学装置 |
GB2363518A (en) | 2000-06-17 | 2001-12-19 | Sharp Kk | A method of growing a nitride layer on a GaN substrate |
US6693935B2 (en) | 2000-06-20 | 2004-02-17 | Sony Corporation | Semiconductor laser |
JP2002016285A (ja) | 2000-06-27 | 2002-01-18 | National Institute Of Advanced Industrial & Technology | 半導体発光素子 |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
US6749819B2 (en) | 2000-07-28 | 2004-06-15 | Japan Pionics Co., Ltd. | Process for purifying ammonia |
JP4190711B2 (ja) * | 2000-08-31 | 2008-12-03 | 株式会社リコー | Iii族窒化物結晶の結晶製造方法および結晶製造装置 |
JP4154558B2 (ja) | 2000-09-01 | 2008-09-24 | 日本電気株式会社 | 半導体装置 |
JP4416297B2 (ja) | 2000-09-08 | 2010-02-17 | シャープ株式会社 | 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置 |
US6858882B2 (en) | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
JP2002094189A (ja) | 2000-09-14 | 2002-03-29 | Sharp Corp | 窒化物半導体レーザ素子およびそれを用いた光学装置 |
JP2002134416A (ja) | 2000-10-19 | 2002-05-10 | Ricoh Co Ltd | p型3族窒化物の結晶成長方法および製造方法、並びに半導体素子 |
US7053413B2 (en) | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
US6936488B2 (en) | 2000-10-23 | 2005-08-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP4063520B2 (ja) | 2000-11-30 | 2008-03-19 | 日本碍子株式会社 | 半導体発光素子 |
AU2002219966A1 (en) | 2000-11-30 | 2002-06-11 | North Carolina State University | Methods and apparatus for producing m'n based materials |
JP4003413B2 (ja) | 2000-12-11 | 2007-11-07 | 日亜化学工業株式会社 | 13族窒化物結晶の製造方法 |
JP3785566B2 (ja) | 2001-03-19 | 2006-06-14 | 株式会社日鉱マテリアルズ | GaN系化合物半導体結晶の製造方法 |
US6806508B2 (en) | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
JP4633962B2 (ja) | 2001-05-18 | 2011-02-16 | 日亜化学工業株式会社 | 窒化物半導体基板の製造方法 |
US6734530B2 (en) | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
JP4116535B2 (ja) * | 2001-06-06 | 2008-07-09 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物の単結晶の製造法及び装置 |
PL207400B1 (pl) | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
PL350375A1 (en) | 2001-10-26 | 2003-05-05 | Ammono Sp Z Oo | Epitaxial layer substrate |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
JP2002009392A (ja) | 2001-06-22 | 2002-01-11 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
US6562466B2 (en) | 2001-07-02 | 2003-05-13 | Essilor International Compagnie Generale D'optique | Process for transferring a coating onto a surface of a lens blank |
KR100679387B1 (ko) * | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | 질화물 반도체 레이저 소자 및 이의 제조방법 |
US7132730B2 (en) | 2001-10-26 | 2006-11-07 | Ammono Sp. Z.O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
US7097707B2 (en) | 2001-12-31 | 2006-08-29 | Cree, Inc. | GaN boule grown from liquid melt using GaN seed wafers |
US20030209191A1 (en) | 2002-05-13 | 2003-11-13 | Purdy Andrew P. | Ammonothermal process for bulk synthesis and growth of cubic GaN |
AU2002354467A1 (en) | 2002-05-17 | 2003-12-02 | Ammono Sp.Zo.O. | Light emitting element structure having nitride bulk single crystal layer |
EP1514958B1 (en) | 2002-05-17 | 2014-05-14 | Ammono S.A. | Apparatus for obtaining a bulk single crystal using supercritical ammonia |
US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US7364619B2 (en) | 2002-06-26 | 2008-04-29 | Ammono. Sp. Zo.O. | Process for obtaining of bulk monocrystalline gallium-containing nitride |
KR20050054482A (ko) | 2002-06-26 | 2005-06-10 | 암모노 에스피. 제트오. 오. | 질화물 반도체 레이저 디바이스 및 그의 성능을향상시키기 위한 방법 |
US7099073B2 (en) * | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
US7314517B2 (en) | 2002-12-11 | 2008-01-01 | Ammono Sp. Z.O.O. | Process for obtaining bulk mono-crystalline gallium-containing nitride |
EP1581675B1 (en) * | 2002-12-11 | 2009-10-14 | AMMONO Sp. z o.o. | A template type substrate and a method of preparing the same |
TWI334890B (en) | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
TW200502445A (en) | 2003-04-03 | 2005-01-16 | Mitsubishi Chem Corp | The single crystal of zing oxide |
WO2005121415A1 (en) | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Bulk mono-crystalline gallium-containing nitride and its application |
WO2005122232A1 (en) | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
PL371405A1 (pl) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
US7704324B2 (en) | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
EP2004882A2 (en) | 2006-04-07 | 2008-12-24 | The Regents of the University of California | Growing large surface area gallium nitride crystals |
US7803344B2 (en) | 2006-10-25 | 2010-09-28 | The Regents Of The University Of California | Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby |
WO2009039398A1 (en) | 2007-09-19 | 2009-03-26 | The Regents Of The University Of California | Gallium nitride bulk crystals and their growth method |
-
2003
- 2003-12-11 EP EP03778842A patent/EP1581675B1/en not_active Expired - Lifetime
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- 2003-12-11 DE DE60329713T patent/DE60329713D1/de not_active Expired - Lifetime
-
2006
- 2006-02-20 HK HK06102217A patent/HK1083030A1/xx not_active IP Right Cessation
-
2008
- 2008-06-16 US US12/213,212 patent/US8110848B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004845A1 (en) * | 1993-08-10 | 1995-02-16 | Centrum Badan Wysokocisnieniowych | Crystalline multilayer structure and manufacturing method thereof |
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
FR2796657A1 (fr) * | 1999-07-20 | 2001-01-26 | Thomson Csf | Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique |
JP2001185718A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Cable Ltd | 窒化ガリウム系化合物半導体を用いた高電子移動度トランジスタ用エピタキシャルウェハの製造方法 |
JP2002029897A (ja) * | 2000-07-10 | 2002-01-29 | Sumitomo Electric Ind Ltd | 単結晶GaN基板の製造方法と単結晶GaN基板 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008047637A1 (fr) | 2006-10-16 | 2008-04-24 | Mitsubishi Chemical Corporation | Procédé de fabrication d'un semiconducteur à base de nitrure, agent d'augmentation de la vitesse de croissance cristalline, monocristal de nitrure, tranche et dispositif |
WO2008078672A1 (ja) * | 2006-12-26 | 2008-07-03 | Sharp Kabushiki Kaisha | 窒化物半導体発光素子 |
JP2011509231A (ja) * | 2008-02-25 | 2011-03-24 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物ウエハを製造する方法およびiii族窒化物ウエハ |
JP2013126945A (ja) * | 2008-02-25 | 2013-06-27 | Sixpoint Materials Inc | Iii族窒化物ウエハを製造する方法およびiii族窒化物ウエハ |
JP2013159547A (ja) * | 2012-02-08 | 2013-08-19 | Toyoda Gosei Co Ltd | Iii族窒化物半導体結晶の製造方法 |
JP2014027092A (ja) * | 2012-07-26 | 2014-02-06 | Sharp Corp | 半導体発光素子 |
US9673046B2 (en) | 2012-12-17 | 2017-06-06 | Mitsubishi Chemical Corporation | Gallium nitride substrate and manufacturing method of nitride semiconductor crystal |
US10734485B2 (en) | 2012-12-17 | 2020-08-04 | Mitsubishi Chemical Corporation | Gallium nitride substrate and manufacturing method of nitride semiconductor crystal |
US11670687B2 (en) | 2012-12-17 | 2023-06-06 | Mitsubishi Chemical Corporation | Gallium nitride substrate and manufacturing method of nitride semiconductor crystal |
JP2015187043A (ja) * | 2014-03-26 | 2015-10-29 | 日亜化学工業株式会社 | 窒化物半導体基板の製造方法 |
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