WO2008078672A1 - 窒化物半導体発光素子 - Google Patents

窒化物半導体発光素子 Download PDF

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Publication number
WO2008078672A1
WO2008078672A1 PCT/JP2007/074631 JP2007074631W WO2008078672A1 WO 2008078672 A1 WO2008078672 A1 WO 2008078672A1 JP 2007074631 W JP2007074631 W JP 2007074631W WO 2008078672 A1 WO2008078672 A1 WO 2008078672A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
conductivity type
type nitride
light emitting
emitting element
Prior art date
Application number
PCT/JP2007/074631
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Ando
Kazuhiko Furukawa
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008078672A1 publication Critical patent/WO2008078672A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

　基板（１，１１，１１１）と、基板（１，１１，１１１）上に順次積層された、第１導電型窒化物半導体層（３，１３）と、活性層（５，１５）と、第２導電型窒化物半導体層（６，１６）と、を含み、第１導電型窒化物半導体層（３，１３）は、ＡｌとＧａとを含む窒化物半導体を主成分としており、第１導電型窒化物半導体層（３，１３）と活性層（５，１５）との間に第１導電型窒化物半導体層（３，１３）よりもＡｌの組成比が小さい第３導電型窒化物半導体層（４，１４）を備えている窒化物半導体発光素子である。
PCT/JP2007/074631 2006-12-26 2007-12-21 窒化物半導体発光素子 WO2008078672A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-349979 2006-12-26
JP2006349979A JP2008160025A (ja) 2006-12-26 2006-12-26 窒化物半導体発光素子

Publications (1)

Publication Number Publication Date
WO2008078672A1 true WO2008078672A1 (ja) 2008-07-03

Family

ID=39562462

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074631 WO2008078672A1 (ja) 2006-12-26 2007-12-21 窒化物半導体発光素子

Country Status (2)

Country Link
JP (1) JP2008160025A (ja)
WO (1) WO2008078672A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777707B2 (en) 2016-04-27 2020-09-15 Stanley Electric Co., Ltd. Group-III nitride stacked body and group-III nitride light-emitting element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6713951B2 (ja) * 2017-06-01 2020-06-24 ユニ・チャーム株式会社 吸収性物品、及び、吸収性物品の製造方法
KR102407739B1 (ko) * 2017-11-24 2022-06-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992881A (ja) * 1995-09-21 1997-04-04 Toshiba Corp 化合物半導体装置
JPH10199815A (ja) * 1997-01-09 1998-07-31 Mitsubishi Cable Ind Ltd ＧａＮ系結晶の製造方法
JPH10290027A (ja) * 1997-02-12 1998-10-27 Toshiba Corp 半導体発光装置及びその製造方法
JP2000156524A (ja) * 1998-09-14 2000-06-06 Matsushita Electronics Industry Corp 半導体装置、半導体基板とそれらの製造方法
JP2003086533A (ja) * 2001-09-13 2003-03-20 Sharp Corp 窒化物半導体素子および半導体装置
JP2003309071A (ja) * 2002-04-15 2003-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系半導体結晶基材
JP2005057224A (ja) * 2003-08-05 2005-03-03 Toshiaki Sakaida 窒化物系化合物半導体の製造方法
JP2006509710A (ja) * 2002-12-11 2006-03-23 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992881A (ja) * 1995-09-21 1997-04-04 Toshiba Corp 化合物半導体装置
JPH10199815A (ja) * 1997-01-09 1998-07-31 Mitsubishi Cable Ind Ltd ＧａＮ系結晶の製造方法
JPH10290027A (ja) * 1997-02-12 1998-10-27 Toshiba Corp 半導体発光装置及びその製造方法
JP2000156524A (ja) * 1998-09-14 2000-06-06 Matsushita Electronics Industry Corp 半導体装置、半導体基板とそれらの製造方法
JP2003086533A (ja) * 2001-09-13 2003-03-20 Sharp Corp 窒化物半導体素子および半導体装置
JP2003309071A (ja) * 2002-04-15 2003-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系半導体結晶基材
JP2006509710A (ja) * 2002-12-11 2006-03-23 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
JP2005057224A (ja) * 2003-08-05 2005-03-03 Toshiaki Sakaida 窒化物系化合物半導体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777707B2 (en) 2016-04-27 2020-09-15 Stanley Electric Co., Ltd. Group-III nitride stacked body and group-III nitride light-emitting element

Also Published As

Publication number Publication date
JP2008160025A (ja) 2008-07-10

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