KR20010062301A - 자가 정렬 비접촉식 섀도우 링 공정 키트 - Google Patents

자가 정렬 비접촉식 섀도우 링 공정 키트 Download PDF

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Publication number
KR20010062301A
KR20010062301A KR1020000074931A KR20000074931A KR20010062301A KR 20010062301 A KR20010062301 A KR 20010062301A KR 1020000074931 A KR1020000074931 A KR 1020000074931A KR 20000074931 A KR20000074931 A KR 20000074931A KR 20010062301 A KR20010062301 A KR 20010062301A
Authority
KR
South Korea
Prior art keywords
ring
edge ring
purge
tapered
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020000074931A
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English (en)
Korean (ko)
Inventor
조셉 유도브스키
로렌스 씨. 레이
살바도르 우모토이
토마스 에이. 마다르
기리쉬 디시트
그오-추안 츄
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR20010062301A publication Critical patent/KR20010062301A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020000074931A 1999-12-10 2000-12-09 자가 정렬 비접촉식 섀도우 링 공정 키트 Withdrawn KR20010062301A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/459,313 1999-12-10
US09/459,313 US6589352B1 (en) 1999-12-10 1999-12-10 Self aligning non contact shadow ring process kit

Publications (1)

Publication Number Publication Date
KR20010062301A true KR20010062301A (ko) 2001-07-07

Family

ID=23824271

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000074931A Withdrawn KR20010062301A (ko) 1999-12-10 2000-12-09 자가 정렬 비접촉식 섀도우 링 공정 키트

Country Status (6)

Country Link
US (3) US6589352B1 (enExample)
EP (1) EP1106715A1 (enExample)
JP (1) JP4669606B2 (enExample)
KR (1) KR20010062301A (enExample)
SG (1) SG90764A1 (enExample)
TW (1) TW490715B (enExample)

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KR100461879B1 (ko) * 2001-03-30 2004-12-14 니뽄 가이시 가부시키가이샤 세라믹 서셉터의 지지 구조
WO2009102600A1 (en) * 2008-02-15 2009-08-20 Applied Materials, Inc. Millisecond annealing (dsa) edge protection
KR101141488B1 (ko) * 2003-03-21 2012-05-03 도쿄엘렉트론가부시키가이샤 처리중의 기판이면(裏面) 증착 감소방법 및 장치
KR101226123B1 (ko) * 2009-08-25 2013-01-25 캐논 아네르바 가부시키가이샤 기판 보유 기기, 마스크 정렬 방법 및 진공 처리 기기
KR20150073123A (ko) * 2013-12-20 2015-06-30 램 리써치 코포레이션 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링
KR20150139555A (ko) * 2013-04-08 2015-12-11 오엘리콘 썰피스 솔루션즈 아게, 츠르바크 향상된 전력 호환가능성을 갖는 스퍼터링 표적
KR20180029278A (ko) * 2009-12-31 2018-03-20 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 엣지 및 경사면 증착을 수정하기 위한 쉐도우 링
KR20180098704A (ko) * 2008-10-31 2018-09-04 에이에스엠 아메리카, 인코포레이티드 자가 중심설정 서셉터 링 조립체
KR20210155813A (ko) * 2019-05-14 2021-12-23 매슨 테크놀로지 인크 포커스 링 조정 조립체를 갖는 플라즈마 처리 장치
KR20230082663A (ko) * 2020-11-05 2023-06-08 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 운반 장치 및 반도체 반응 챔버

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KR20150073123A (ko) * 2013-12-20 2015-06-30 램 리써치 코포레이션 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링
KR20220152965A (ko) * 2013-12-20 2022-11-17 램 리써치 코포레이션 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링
KR20210155813A (ko) * 2019-05-14 2021-12-23 매슨 테크놀로지 인크 포커스 링 조정 조립체를 갖는 플라즈마 처리 장치
KR20240091209A (ko) * 2019-05-14 2024-06-21 매슨 테크놀로지 인크 포커스 링 조정 조립체를 갖는 플라즈마 처리 장치
KR20240152979A (ko) * 2019-05-14 2024-10-22 매슨 테크놀로지 인크 포커스 링 조정 조립체를 갖는 플라즈마 처리 장치
KR20230082663A (ko) * 2020-11-05 2023-06-08 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 운반 장치 및 반도체 반응 챔버

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US8342119B2 (en) 2013-01-01
JP4669606B2 (ja) 2011-04-13
US20080072823A1 (en) 2008-03-27
TW490715B (en) 2002-06-11
US6589352B1 (en) 2003-07-08
US20040003780A1 (en) 2004-01-08

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