JP6888007B2 - ウェハエッジリングの持ち上げに関する解決 - Google Patents
ウェハエッジリングの持ち上げに関する解決 Download PDFInfo
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- JP6888007B2 JP6888007B2 JP2018522911A JP2018522911A JP6888007B2 JP 6888007 B2 JP6888007 B2 JP 6888007B2 JP 2018522911 A JP2018522911 A JP 2018522911A JP 2018522911 A JP2018522911 A JP 2018522911A JP 6888007 B2 JP6888007 B2 JP 6888007B2
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- 239000000758 substrate Substances 0.000 claims description 122
- 238000012545 processing Methods 0.000 claims description 100
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000036961 partial effect Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
本開示の実施例は、一般に、基板(例えば、半導体基板など)を処理するための装置に関する。より詳細には、処理キット及びその使用方法が開示される。
基板(例えば、半導体基板及びディスプレイパネルなど)の処理では、基板は処理チャンバ内のサポート上に配置され、適切な処理条件が処理チャンバ内で維持され、基板の表面に堆積、エッチング、層形成する方法、又は他の方法で処理される。エッチング処理の間、エッチング処理を駆動するプラズマは、基板表面に亘って均一に分布しないことがある。不均一性は、特に基板表面のエッジ部で明らかである。この不均一性は、処理結果不良の一因になる。したがって、いくつかの処理チャンバでは、プラズマの均一性を高め、処理の歩留まりを改善するために、処理キットリングとも呼ばれるエッジリングが使用される。
1つ以上のアクチュエータ736は、1つ以上のプッシュピン733を異なる高さに上昇させることができ、エッジリング732は基板802の処理表面に対して傾く。エッジリング732を傾けることによって、すなわち、エッジリング732を基板802の処理表面と非同一平面にすることによって、基板エッジ近傍の特定の位置におけるプラズマシース及び/又は化学的状態が変化し、基板エッジ近傍での方位的な不均一性が低下する。
Claims (15)
- 基板を処理するための装置であって、
第1の部分と、第2の部分とを含む静電チャックと、
前記静電チャックを取り囲む処理キットとを備え、前記処理キットは、
前記静電チャックの前記第2の部分の表面上に配置されたサポートリングであって、
前記サポートリングは、前記静電チャックの前記第1の部分を取り囲み、
前記サポートリングは上面を含み、前記上面は、
第1の高さに配置された半径方向内エッジと、
前記第1の高さよりも低い第2の高さに配置された半径方向外側エッジとを有している、サポートリングと、
前記サポートリング上に配置され、前記サポートリングに対して独立して移動可能なエッジリングと、
前記エッジリングを取り囲むカバーリングであって、前記サポートリングの全体が前記カバーリングの最も内側の表面の半径方向内側に配置されているカバーリングと、
絶縁プレート及び前記絶縁プレート上に配置された石英スリーブと、
前記カバーリングの内径の半径方向内側に配置された1つ以上のプッシュピンであって、
前記1つ以上のプッシュピンは前記エッジリングを上昇させるように動作可能であり、
前記1つ以上のプッシュピンは前記スリーブの開口部に配置されており、
前記サポートリングの半径方向の動きは前記プッシュピンによって拘束されている、プッシュピンとを備える、基板を処理するための装置。 - 前記1つ以上のプッシュピンは、前記エッジリングを上昇させる間、前記エッジリングの下面に係合するように動作可能である、請求項1に記載の装置。
- 前記カバーリング及び前記1つ以上のプッシュピンは石英から製造される、請求項2に記載の装置。
- 前記1つ以上のプッシュピンの高さを制御するように動作可能な1つ以上のステッピングモータを更に備える、請求項2に記載の装置。
- 基板サポートアセンブリであって、
第1の部分と第2の部分とを含む静電チャックであって、前記第1の部分は、前記第2の部分から上方に延在し、前記第2の部分の外側直径よりも小さい外径を有している静電チャックと、
前記第2の部分に埋め込まれた電極であって、外エッジを有する電極と、
前記静電チャックを取り囲む処理キットとを備え、前記処理キットは、
前記静電チャックの前記第2の部分の表面上に配置されたサポートリングであって、
前記サポートリングは、前記静電チャックの前記第1の部分を取り囲み、
前記サポートリングは、前記静電チャックの前記電極の前記外エッジの内側に配置された半径方向内エッジを有しているサポートリングと、
前記サポートリング上に配置され、前記サポートリングに対して独立して移動可能なエッジリングであって、前記静電チャックの前記電極の外エッジの内側に配置された半径方向内エッジを有するエッジリングと、
前記エッジリングを取り囲むカバーリングであって、前記サポートリングの全体が前記カバーリングの最も内側の表面の半径方向内側に配置されているカバーリングと、
絶縁プレート及び前記絶縁プレート上に配置された石英スリーブと、
前記カバーリングの内径の半径方向内側に配置された1つ以上のプッシュピンであって、
前記1つ以上のプッシュピンは前記エッジリングを上昇させるように動作可能であり、
前記1つ以上のプッシュピンは前記スリーブの開口部に配置されており、
前記サポートリングの半径方向の動きは前記プッシュピンによって拘束されている、プッシュピンとを備えている基板サポートアセンブリ。 - 前記1つ以上のプッシュピンの各々は、その上端に面取りされた先端を備えている、請求項1に記載の装置。
- 前記1つ以上のプッシュピンの各々の前記面取りされた先端は、前記エッジリングの下面に形成された対応するキャビティと係合するように配置されている、請求項6に記載の装置。
- 段付きフィーチャーが前記サポートリングの前記上面に形成されている、請求項1に記載の装置。
- 前記半径方向外側エッジにおける前記サポートリングの厚さは、前記半径方向内エッジにおける前記サポートリングの厚さよりも小さい、請求項1に記載の装置。
- 前記サポートリングの前記半径方向外側エッジは、前記1つ以上のプッシュピンの半径方向外側に配置されている、請求項1に記載の装置。
- 前記静電チャックの前記第1の部分は前記第2の部分から上方に延在し、前記第1の部分は、前記第2の部分の外径よりも小さい外径を有している、請求項1に記載の装置。
- 前記サポートリングは上面を備え、前記上面には段付きフィーチャーが形成され、前記サポートリングの前記半径方向内エッジにおける前記上面は、半径方向外側エッジにおける前記上面より上に延在している、請求項5に記載の基板支持アセンブリ。
- 前記1つ以上のプッシュピンの各々は、その上部に面取りされた先端を備え、前記1つ以上のプッシュピンの各々の前記面取りされた先端は、前記エッジリングの下面に形成された対応するキャビティと係合するように配置されている、請求項12に記載の基板支持アセンブリ。
- 前記半径方向外側エッジにおける前記サポートリングの厚さは、前記半径方向内エッジにおける前記サポートリングの厚さよりも小さい、請求項13に記載の基板支持アセンブリ。
- 前記サポートリングの前記半径方向外側エッジは、前記1つ以上のプッシュピンの半径方向外側に配置されている、請求項14に記載の基板支持アセンブリ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2021084341A JP7185725B2 (ja) | 2016-01-26 | 2021-05-19 | ウェハエッジリングの持ち上げに関する解決 |
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US201662287038P | 2016-01-26 | 2016-01-26 | |
US62/287,038 | 2016-01-26 | ||
IN201641019009 | 2016-06-02 | ||
IN201641019009 | 2016-06-02 | ||
PCT/US2016/069449 WO2017131927A1 (en) | 2016-01-26 | 2016-12-30 | Wafer edge ring lifting solution |
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JP2021084341A Division JP7185725B2 (ja) | 2016-01-26 | 2021-05-19 | ウェハエッジリングの持ち上げに関する解決 |
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JP2019505088A JP2019505088A (ja) | 2019-02-21 |
JP2019505088A5 JP2019505088A5 (ja) | 2019-12-26 |
JP6888007B2 true JP6888007B2 (ja) | 2021-06-16 |
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JP2021084341A Active JP7185725B2 (ja) | 2016-01-26 | 2021-05-19 | ウェハエッジリングの持ち上げに関する解決 |
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JP5690596B2 (ja) * | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
KR102617972B1 (ko) * | 2017-11-21 | 2023-12-22 | 램 리써치 코포레이션 | 하단 링 및 중간 에지 링 |
JP7105666B2 (ja) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7134104B2 (ja) * | 2019-01-09 | 2022-09-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の載置台 |
JP7339062B2 (ja) | 2019-08-09 | 2023-09-05 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
JP7465733B2 (ja) | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
KR20220156066A (ko) | 2020-03-23 | 2022-11-24 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들에서의 중간-링 부식 보상 |
CN112397366B (zh) | 2020-11-05 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 一种承载装置及半导体反应腔室 |
KR102491002B1 (ko) * | 2021-06-28 | 2023-01-27 | 세메스 주식회사 | 링 부재 및 이를 가지는 기판 처리 장치 |
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