KR100461879B1 - 세라믹 서셉터의 지지 구조 - Google Patents
세라믹 서셉터의 지지 구조 Download PDFInfo
- Publication number
- KR100461879B1 KR100461879B1 KR10-2002-0016974A KR20020016974A KR100461879B1 KR 100461879 B1 KR100461879 B1 KR 100461879B1 KR 20020016974 A KR20020016974 A KR 20020016974A KR 100461879 B1 KR100461879 B1 KR 100461879B1
- Authority
- KR
- South Korea
- Prior art keywords
- support
- support member
- susceptor
- ceramic susceptor
- support protrusion
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 15
- 239000011810 insulating material Substances 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 6
- 238000003825 pressing Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000009434 installation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- -1 rare earth nitride Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Abstract
Description
Claims (7)
- 삭제
- 피처리물을 설치하고, 온도 변화를 동반하는 세라믹 서셉터를 처리 챔버 내에 부착하기 위한 지지 구조로서,상기 세라믹 서셉터의 피처리물 설치면과는 반대면측에 일체화되어 있는 지지용 돌기와,상기 지지용 돌기의 적어도 일부를 포위하며, 상기 지지용 돌기와는 별체인 단열 부재와,상기 단열 부재에 연결되고 상기 처리 챔버에 부착되는 금속 부재를 구비하고,상기 지지용 돌기는 상기 단열 부재에 기계적 수단에 의하여 유동 가능한 상태로 부착되어 있고, 상기 금속 부재와 상기 지지 돌기는 서로 직접 부착되지는 않으며, 상기 단열 부재의 중심축은 상기 금속 부재의 중심축과 실질적으로 일직선으로 정렬되어 있는 것을 특징으로 하는 세라믹 서셉터의 지지 구조.
- 제2항에 있어서, 상기 금속 부재는 통형을 이루고 있는 것을 특징으로 하는 지지 구조.
- 제2항에 있어서, 상기 단열 부재는 통형을 이루고 있는 것을 특징으로 하는 지지 구조.
- 제2항 내지 제4항 중 어느 한 항에 있어서, 상기 지지용 돌기 및 상기 단열 부재에 각각 관통 구멍이 마련되어 있으며, 상기 기계적 수단이 상기 지지용 돌기의 관통 구멍 및 상기 단열 부재의 관통 구멍 내에 삽입되어 있는 결합 부재인 것을 특징으로 하는 지지 구조.
- 제2항 내지 제4항 중 어느 한 항에 있어서, 상기 기계적 수단이 상기 지지용 돌기의 외벽면 및 상기 단열 부재의 외벽면을 외측에서 유지하는 유지 부재인 것을 특징으로 하는 지지 구조.
- 제2항 내지 제4항 중 어느 한 항에 있어서, 상기 기계적 수단은 상기 단열 부재를 상기 지지용 돌기를 향해 힘을 가함으로써 상기 지지용 돌기를 상기 지지 부재에 고정하기 위한 가압 부재인 것을 특징으로 하는 지지 구조.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001098695A JP4331901B2 (ja) | 2001-03-30 | 2001-03-30 | セラミックサセプターの支持構造 |
JPJP-P-2001-00098695 | 2001-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020077176A KR20020077176A (ko) | 2002-10-11 |
KR100461879B1 true KR100461879B1 (ko) | 2004-12-14 |
Family
ID=18952325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0016974A KR100461879B1 (ko) | 2001-03-30 | 2002-03-28 | 세라믹 서셉터의 지지 구조 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6878211B2 (ko) |
JP (1) | JP4331901B2 (ko) |
KR (1) | KR100461879B1 (ko) |
TW (1) | TWI242829B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170138003A (ko) * | 2016-06-03 | 2017-12-14 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
Families Citing this family (22)
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JP3687849B2 (ja) * | 2002-02-18 | 2005-08-24 | 東芝セラミックス株式会社 | 高温熱処理用ウェーハボート支え治具 |
JP3520074B2 (ja) * | 2002-03-28 | 2004-04-19 | 日本碍子株式会社 | セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプターの支持部材 |
JP3534738B2 (ja) * | 2002-03-28 | 2004-06-07 | 日本碍子株式会社 | セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプター用支持部材 |
JP3832409B2 (ja) | 2002-09-18 | 2006-10-11 | 住友電気工業株式会社 | ウエハー保持体及び半導体製造装置 |
JP4111013B2 (ja) * | 2003-03-11 | 2008-07-02 | 住友電気工業株式会社 | 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置 |
JP4518370B2 (ja) * | 2003-07-10 | 2010-08-04 | 日本碍子株式会社 | セラミックサセプターの支持構造 |
TW200508413A (en) * | 2003-08-06 | 2005-03-01 | Ulvac Inc | Device and method for manufacturing thin films |
JP2005216759A (ja) * | 2004-01-30 | 2005-08-11 | Nhk Spring Co Ltd | ヒータユニット |
US8956459B2 (en) * | 2005-02-23 | 2015-02-17 | Kyocera Corporation | Joined assembly, wafer holding assembly, attaching structure thereof and method for processing wafer |
JP5135915B2 (ja) * | 2007-06-28 | 2013-02-06 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP2009054871A (ja) * | 2007-08-28 | 2009-03-12 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP5087416B2 (ja) * | 2008-01-24 | 2012-12-05 | 日本碍子株式会社 | セラミックスヒータ及びその製造方法 |
DE102009048170B3 (de) * | 2009-10-02 | 2011-04-28 | Deutsches Elektronen-Synchrotron Desy | Probenaufnahmevorrichtung für Probenmaterialien in Ultrahochvakuumkammern |
CN101922042B (zh) * | 2010-08-19 | 2012-05-30 | 江苏中晟半导体设备有限公司 | 一种外延片托盘支撑旋转联接装置 |
JP5697441B2 (ja) * | 2010-12-28 | 2015-04-08 | キヤノンアネルバ株式会社 | 基板熱処理装置 |
JP5894401B2 (ja) * | 2011-09-12 | 2016-03-30 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | ポスト型セラミックスヒータおよびその製造方法 |
US9816184B2 (en) * | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
JP6539498B2 (ja) * | 2015-05-26 | 2019-07-03 | 株式会社Screenホールディングス | 熱処理装置 |
KR102409329B1 (ko) * | 2015-11-04 | 2022-06-16 | (주)포인트엔지니어링 | 서셉터 및 이를 포함하는 진공챔버 |
KR102408404B1 (ko) * | 2015-11-04 | 2022-06-14 | (주)포인트엔지니어링 | 서셉터 및 이를 구비한 진공챔버 |
JP6865128B2 (ja) * | 2017-07-19 | 2021-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2020067128A1 (ja) * | 2018-09-28 | 2020-04-02 | 京セラ株式会社 | セラミック構造体及びウェハ用システム |
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KR100233210B1 (ko) * | 1994-05-03 | 1999-12-01 | 조셉 제이. 스위니 | 용접된 서셉터 조립체 |
KR20010062301A (ko) * | 1999-12-10 | 2001-07-07 | 조셉 제이. 스위니 | 자가 정렬 비접촉식 섀도우 링 공정 키트 |
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JPS59232994A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Mach Co Ltd | 気相成長装置 |
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JP3220274B2 (ja) * | 1993-03-16 | 2001-10-22 | 日本碍子株式会社 | 耐腐食性セラミック体の接合構造 |
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2001
- 2001-03-30 JP JP2001098695A patent/JP4331901B2/ja not_active Expired - Lifetime
- 2001-12-18 TW TW090131328A patent/TWI242829B/zh not_active IP Right Cessation
-
2002
- 2002-03-25 US US10/105,881 patent/US6878211B2/en not_active Expired - Lifetime
- 2002-03-28 KR KR10-2002-0016974A patent/KR100461879B1/ko active IP Right Grant
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KR100233210B1 (ko) * | 1994-05-03 | 1999-12-01 | 조셉 제이. 스위니 | 용접된 서셉터 조립체 |
KR20010062301A (ko) * | 1999-12-10 | 2001-07-07 | 조셉 제이. 스위니 | 자가 정렬 비접촉식 섀도우 링 공정 키트 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170138003A (ko) * | 2016-06-03 | 2017-12-14 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
KR102612193B1 (ko) | 2016-06-03 | 2023-12-12 | 삼성전자주식회사 | 웨이퍼 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
TWI242829B (en) | 2005-11-01 |
KR20020077176A (ko) | 2002-10-11 |
US6878211B2 (en) | 2005-04-12 |
US20020144787A1 (en) | 2002-10-10 |
JP4331901B2 (ja) | 2009-09-16 |
JP2002299432A (ja) | 2002-10-11 |
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