JP5073631B2 - 基板プロセス装置でのエッジ堆積を制御する移動可能リング - Google Patents
基板プロセス装置でのエッジ堆積を制御する移動可能リング Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
半導体基板ウエハの下面及びエッジへの物質の堆積を低減する為に、図2及び3に例示されるヒータペデスタルは、ペデスタル16の支持面22上にウエハが受容される際にウエハ(図示されず)の外縁に近接して配置される、周囲を囲むパージガスリング24の形態であるエッジ保護具を有している。一旦ウエハがペデスタル16上に配置され処理が始まると、パージガスの連続流れがパージガスマニホールド26に供給され、環状パージギャップ80を通って基板のエッジ全体の周囲に流れる。このパージ流れは、基板のエッジ上で又はエッジのすぐ近傍の基板下面で堆積がほとんど又は全く生じない、という効果を有している。その結果としての物質堆積層の形状は、図1(b)に例示されている物に類似するであろう。
図2に例示されているように、ペデスタル16はその上部に半導体ウエハ23(図2には示されていない)を支持することができる上部支持面22を有している。この面22は、そこに形成されている複数の同心状円形溝40を持つ。これらの同心状溝40は、典型的には、幅0.21mm(0.08inches)、深さ0.38mm(0.015inchs)、間隔2.97mm(0.117inches)である。これらは、放射線状に方向づけられた流路(channel)によって相互接合されている。それぞれの放射状の流路42の長さのほぼ中間で、複数の(総数24個の)真空ポート44がペデスタルの本体内に形成されている。
Claims (11)
- 基板上に材料の層を堆積する堆積チャンバであって、
真空チャンバと、
前記真空チャンバ内に配されており、上面及び側面を有し、且つ、前記上面が基板を支持する水平な中央の第1エリアと前記第1エリアの周囲と前記側面との間にある第2エリアとを有するペデスタルと、
前記ペデスタルの前記上面における前記第2エリアの上に、前記ペデスタルの前記上面からギャップを隔てて配された第1の部分を有するパージリングと、を備え、
前記パージリングは、前記パージリングの前記第1の部分から下方に延びており、前記ペデスタルの前記側面の少なくとも一部を囲う側部を有し、
前記パージリングは、前記ペデスタルよりも線膨張係数の低い材料で形成されており、 前記ペデスタルが加熱された場合に、前記ペデスタルの膨張によって前記ペデスタルの前記側面が前記パージリングに接触し、
前記ペデスタルが加熱されない場合に、前記ペデスタルの前記側面が前記パージリングに接触しない堆積チャンバ。 - 基板上に材料の層を堆積する堆積チャンバであって、
真空チャンバと、
前記真空チャンバ内に配されており、上面及び側面を有し、且つ、前記上面が基板を支持する水平な中央の第1エリアと前記第1エリアの周囲と前記側面との間にある第2エリアとを有するペデスタルと、
前記ペデスタルの前記上面における前記第2エリアの上に、前記ペデスタルの前記上面からギャップを隔てて配された第1の部分を有するパージリングと、を備え、
前記パージリングは、前記パージリングの前記第1の部分につながりここから下方に延びており、前記ペデスタルの前記側面の少なくとも一部を囲う側部を有し、
前記パージリングは、前記ペデスタルよりも線膨張係数の低い材料で形成されており、 前記ペデスタルが加熱された場合に、前記ペデスタルの膨張によって前記ペデスタルの前記側面が前記パージリングに接触し、
前記ペデスタルが加熱されない場合に、前記ペデスタルの前記側面が前記パージリングに接触しない堆積チャンバ。 - 基板上に材料の層を堆積する堆積チャンバであって、
真空チャンバと、
前記真空チャンバ内に配されており、且つ、上面及び側面を有するペデスタルであって、前記上面が、基板を支持する水平な中央の第1エリアと前記第1エリアの周囲と前記側面との間にある第2エリアとを有する、前記ペデスタルと、
前記ペデスタルの前記上面における前記第2エリアの上に、前記ペデスタルの前記上面からギャップを隔てて且つ当該上面に接触しないように設けられた第1の部分を有するパージリングと、
前記ペデスタル内に設けられ、前記パージリングにおける前記第1の部分よりも下方にパージガス排出口を有するパージガス導管と、を備えており、
前記パージガス排出口から排出されるパージガスは、前記ペデスタルと前記パージリングにおける前記第1の部分との間の前記ギャップを流れ、
前記パージリングは、前記パージリングの前記第1の部分から下方に延びており、前記パージリングの前記第1の部分に接続されており、前記ペデスタルの前記側面の少なくとも一部を囲う側部を有し、
前記パージリングは、前記ペデスタルよりも線膨張係数の低い材料で形成されており、 前記ペデスタルが加熱された場合に、前記ペデスタルの膨張によって前記ペデスタルの前記側面が前記パージリングに接触し、
前記ペデスタルが加熱されない場合に、前記ペデスタルの前記側面が前記パージリングに接触しない堆積チャンバ。 - 前記パージリングはステンレススチールで形成されており、前記ペデスタルはアルミニウムを含む請求項1〜3の何れか一項記載の堆積チャンバ。
- 前記パージリングは、前記ペデスタルの前記上面における前記第2エリアと平行な面を有し、
前記ギャップは、前記パージリングの前記面と前記ペデスタルの前記上面における前記第2エリアとによって囲まれている請求項1〜3の何れか一項記載の堆積チャンバ。 - 前記ペデスタルにおける前記上面の前記第2エリアは、前記第1エリアから下方に延びると共に、前記第1エリアに対して斜めに設けられている請求項1〜3の何れか一項記載の堆積チャンバ。
- 複数のピンを備え、
前記パージリングは、前記複数のピンに支えられており、
前記複数のピンは、前記パージリングが前記ペデスタルと接触しないように前記パージリングを支える請求項1〜3の何れか一項記載の堆積チャンバ。 - 前記各ピンは、その下端部が前記ペデスタルに接続されることによって、当該ペデスタルに支えられている請求項7記載の堆積チャンバ。
- 前記各ピンは、上端がドーム形状にされている請求項7記載の堆積チャンバ。
- 前記各ピンは、セラミックで形成されている請求項7記載の堆積チャンバ。
- 前記各ピンは、アルミナで形成されている請求項7記載の堆積チャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/472,220 US5766365A (en) | 1994-02-23 | 1995-06-07 | Removable ring for controlling edge deposition in substrate processing apparatus |
US08/472220 | 1995-06-07 |
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JP8146214A Division JPH09134884A (ja) | 1995-06-07 | 1996-06-07 | 基板プロセス装置でのエッジ堆積を制御する移動可能リング |
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JP2009041110A JP2009041110A (ja) | 2009-02-26 |
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JP8146214A Pending JPH09134884A (ja) | 1995-06-07 | 1996-06-07 | 基板プロセス装置でのエッジ堆積を制御する移動可能リング |
JP2008256594A Expired - Lifetime JP5073631B2 (ja) | 1995-06-07 | 2008-10-01 | 基板プロセス装置でのエッジ堆積を制御する移動可能リング |
JP2012167349A Expired - Lifetime JP5578478B2 (ja) | 1995-06-07 | 2012-07-27 | 基板プロセス装置でのエッジ堆積を制御する移動可能リング |
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Country | Link |
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US (1) | US5766365A (ja) |
EP (1) | EP0747934A1 (ja) |
JP (3) | JPH09134884A (ja) |
KR (1) | KR970003435A (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6365495B2 (en) | 1994-11-14 | 2002-04-02 | Applied Materials, Inc. | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
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US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
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US5178681A (en) * | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
JPH05339734A (ja) * | 1992-06-05 | 1993-12-21 | Sumitomo Metal Ind Ltd | 半導体製造装置 |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
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JP3131860B2 (ja) * | 1993-08-18 | 2001-02-05 | 東京エレクトロン株式会社 | 成膜処理装置 |
US5437757A (en) * | 1994-01-21 | 1995-08-01 | Applied Materials, Inc. | Clamp ring for domed pedestal in wafer processing chamber |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
EP0746874A1 (en) * | 1994-02-23 | 1996-12-11 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
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1995
- 1995-06-07 US US08/472,220 patent/US5766365A/en not_active Expired - Lifetime
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1996
- 1996-06-06 EP EP96304243A patent/EP0747934A1/en not_active Withdrawn
- 1996-06-07 JP JP8146214A patent/JPH09134884A/ja active Pending
- 1996-06-07 KR KR1019960020233A patent/KR970003435A/ko not_active Application Discontinuation
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2012
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JP2012251243A (ja) | 2012-12-20 |
EP0747934A1 (en) | 1996-12-11 |
KR970003435A (ko) | 1997-01-28 |
JP2009041110A (ja) | 2009-02-26 |
JPH09134884A (ja) | 1997-05-20 |
JP5578478B2 (ja) | 2014-08-27 |
US5766365A (en) | 1998-06-16 |
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