KR101698396B1 - 전자 디바이스 형성방법 - Google Patents
전자 디바이스 형성방법 Download PDFInfo
- Publication number
- KR101698396B1 KR101698396B1 KR1020100061494A KR20100061494A KR101698396B1 KR 101698396 B1 KR101698396 B1 KR 101698396B1 KR 1020100061494 A KR1020100061494 A KR 1020100061494A KR 20100061494 A KR20100061494 A KR 20100061494A KR 101698396 B1 KR101698396 B1 KR 101698396B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- resist pattern
- treating
- alkaline
- hard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26960009P | 2009-06-26 | 2009-06-26 | |
| US61/269,600 | 2009-06-26 | ||
| US28168109P | 2009-11-19 | 2009-11-19 | |
| US61/281,681 | 2009-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110002797A KR20110002797A (ko) | 2011-01-10 |
| KR101698396B1 true KR101698396B1 (ko) | 2017-01-20 |
Family
ID=42711855
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100061494A Expired - Fee Related KR101698396B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 디바이스 형성방법 |
| KR1020100061502A Expired - Fee Related KR101766289B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치 형성 방법 |
| KR1020100061499A Expired - Fee Related KR101698400B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치 형성 방법 |
| KR1020100061498A Expired - Fee Related KR101724384B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치를 형성하기 위한 조성물 및 방법 |
| KR1020100061495A Expired - Fee Related KR101671289B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장비 형성 방법 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100061502A Expired - Fee Related KR101766289B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치 형성 방법 |
| KR1020100061499A Expired - Fee Related KR101698400B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치 형성 방법 |
| KR1020100061498A Expired - Fee Related KR101724384B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장치를 형성하기 위한 조성물 및 방법 |
| KR1020100061495A Expired - Fee Related KR101671289B1 (ko) | 2009-06-26 | 2010-06-28 | 전자 장비 형성 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (7) | US8338083B2 (enExample) |
| EP (3) | EP2287668A1 (enExample) |
| JP (5) | JP5698922B2 (enExample) |
| KR (5) | KR101698396B1 (enExample) |
| CN (3) | CN101963754B (enExample) |
| TW (3) | TWI449084B (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5698923B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 自己整合型スペーサー多重パターニング方法 |
| JP5698922B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 電子デバイスを形成する方法 |
| EP2336824A1 (en) | 2009-11-19 | 2011-06-22 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming electronic devices |
| JP5542500B2 (ja) * | 2010-03-30 | 2014-07-09 | 東京応化工業株式会社 | レジストパターン形成方法およびレジスト組成物 |
| KR20120027989A (ko) * | 2010-09-14 | 2012-03-22 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
| KR101865296B1 (ko) * | 2011-06-15 | 2018-06-07 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| CN102856190B (zh) * | 2011-06-30 | 2015-04-01 | 中芯国际集成电路制造(上海)有限公司 | 条形结构的刻蚀方法 |
| KR101909567B1 (ko) * | 2011-07-08 | 2018-10-18 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
| US9064808B2 (en) | 2011-07-25 | 2015-06-23 | Synopsys, Inc. | Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same |
| US8609550B2 (en) * | 2011-09-08 | 2013-12-17 | Synopsys, Inc. | Methods for manufacturing integrated circuit devices having features with reduced edge curvature |
| CN103034048B (zh) * | 2011-09-29 | 2015-04-22 | 中芯国际集成电路制造(北京)有限公司 | 光刻方法 |
| CN102364389A (zh) * | 2011-10-17 | 2012-02-29 | 深圳市华星光电技术有限公司 | 控制液晶显示装置接触孔孔壁角度的制作方法 |
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| JP6028357B2 (ja) | 2012-03-22 | 2016-11-16 | ソニー株式会社 | ヘッドマウントディスプレイ及び手術システム |
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| CN102751238A (zh) * | 2012-07-27 | 2012-10-24 | 上海华力微电子有限公司 | 通孔优先铜互连制作方法 |
| US9086631B2 (en) | 2012-08-27 | 2015-07-21 | Tokyo Electron Limited | EUV resist sensitivity reduction |
| CN102810510A (zh) * | 2012-09-11 | 2012-12-05 | 上海华力微电子有限公司 | 一种铜互连制作方法 |
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| US11264458B2 (en) | 2019-05-20 | 2022-03-01 | Synopsys, Inc. | Crystal orientation engineering to achieve consistent nanowire shapes |
| US11886121B2 (en) * | 2019-08-30 | 2024-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming patterned photoresist |
| KR102827769B1 (ko) * | 2020-03-30 | 2025-07-01 | 램 리써치 코포레이션 | 밀폐형 오버레이어 (hermetic overlayer) 에 의한 포지티브 톤 건식 현상 (positive tone dry development) 을 달성하기 위한 구조체 및 방법 |
| CN117916855A (zh) | 2021-08-25 | 2024-04-19 | 杰米纳蒂奥公司 | 用于形成高密度接触的抗蚀剂内工艺 |
| US20250132166A1 (en) * | 2021-08-25 | 2025-04-24 | Geminatio, Inc. | Generation of multiline etch substrates |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008070060A2 (en) * | 2006-12-06 | 2008-06-12 | Fujifilm Electronic Materials U.S.A., Inc. | Device manufacturing process utilizing a double pattering process |
| WO2008143301A1 (ja) * | 2007-05-23 | 2008-11-27 | Jsr Corporation | パターン形成方法及びそれに用いる樹脂組成物 |
Family Cites Families (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474054A (en) | 1966-09-13 | 1969-10-21 | Permalac Corp The | Surface coating compositions containing pyridine salts or aromatic sulfonic acids |
| US4200729A (en) | 1978-05-22 | 1980-04-29 | King Industries, Inc | Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4251665A (en) | 1978-05-22 | 1981-02-17 | King Industries, Inc. | Aromatic sulfonic acid oxa-azacyclopentane adducts |
| JPS5844715A (ja) * | 1981-09-11 | 1983-03-15 | Fujitsu Ltd | 微細パタ−ン形成方法 |
| DK241885A (da) | 1984-06-01 | 1985-12-02 | Rohm & Haas | Fotosensible belaegningssammensaetninger, termisk stabile belaegninger fremstillet deraf og anvendelse af saadanne belaegninger til dannelse af termisk stabile polymerbilleder |
| CA1307695C (en) | 1986-01-13 | 1992-09-22 | Wayne Edmund Feely | Photosensitive compounds and thermally stable and aqueous developablenegative images |
| EP0358358B1 (en) * | 1988-08-26 | 1994-11-30 | Nippon Oil And Fats Company, Limited | Pigment dispersing agent |
| US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
| US5100696A (en) * | 1989-07-10 | 1992-03-31 | Ncr Corporation | Magnetic thermal transfer ribbon |
| US5187019A (en) | 1991-09-06 | 1993-02-16 | King Industries, Inc. | Latent catalysts |
| JP3340493B2 (ja) * | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
| US5656121A (en) * | 1994-08-19 | 1997-08-12 | Minnesota Mining And Manufacturing Company | Method of making multi-layer composites having a fluoropolymer layer |
| JP3444692B2 (ja) * | 1995-04-14 | 2003-09-08 | 沖電気工業株式会社 | パターン形成方法 |
| JPH09191007A (ja) * | 1996-01-11 | 1997-07-22 | Sumitomo Chem Co Ltd | フォトレジスト用剥離液 |
| JPH11214510A (ja) * | 1998-01-26 | 1999-08-06 | Toshiba Corp | 自己整合型パターン形成方法 |
| JPH11251214A (ja) * | 1998-02-27 | 1999-09-17 | Sharp Corp | タンタル薄膜回路素子の製造方法 |
| US6218085B1 (en) * | 1999-09-21 | 2001-04-17 | Lucent Technologies Inc. | Process for photoresist rework to avoid sodium incorporation |
| JP2001135565A (ja) * | 1999-11-08 | 2001-05-18 | Sony Corp | 半導体装置の製造方法 |
| TWI281101B (en) * | 2000-02-28 | 2007-05-11 | Mitsubishi Electric Corp | Developing process, process for forming pattern and process for preparing semiconductor device using same |
| JP4329216B2 (ja) * | 2000-03-31 | 2009-09-09 | Jsr株式会社 | レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法 |
| JP2002006512A (ja) * | 2000-06-20 | 2002-01-09 | Mitsubishi Electric Corp | 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法 |
| US6534243B1 (en) * | 2000-10-23 | 2003-03-18 | Advanced Micro Devices, Inc. | Chemical feature doubling process |
| KR100546098B1 (ko) * | 2000-12-27 | 2006-01-24 | 주식회사 하이닉스반도체 | 열산 발생제를 포함하는 포토레지스트 조성물을 이용하여포토레지스트 패턴 폭 감소 현상을 개선하는 방법 |
| JP2002278053A (ja) * | 2001-03-16 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| US7670556B2 (en) * | 2001-07-10 | 2010-03-02 | Wisconsin Alumni Research Foundation | Surface plasmon resonance imaging of micro-arrays |
| JP3878451B2 (ja) * | 2001-10-22 | 2007-02-07 | 富士フイルムホールディングス株式会社 | 感光性樹脂転写材料、画像形成方法、カラーフィルターとその製造方法、フォトマスクとその製造方法 |
| JP2003228179A (ja) * | 2002-01-31 | 2003-08-15 | Mitsubishi Gas Chem Co Inc | 銅配線基板向けアミン含有レジスト剥離液および剥離方法 |
| TWI314247B (en) | 2002-03-04 | 2009-09-01 | Shipley Co Llc | Megative photordsists for short wavelength imaging |
| JP4041750B2 (ja) * | 2002-06-28 | 2008-01-30 | 富士フイルム株式会社 | 染料含有硬化性組成物、カラーフィルタ及びその製造方法 |
| JP3675434B2 (ja) * | 2002-10-10 | 2005-07-27 | 東京応化工業株式会社 | 微細パターンの形成方法 |
| US6740473B1 (en) * | 2002-11-28 | 2004-05-25 | United Microelectronics Corp. | Method for shrinking critical dimension of semiconductor devices |
| US6916594B2 (en) * | 2002-12-30 | 2005-07-12 | Hynix Semiconductor Inc. | Overcoating composition for photoresist and method for forming photoresist pattern using the same |
| KR101076623B1 (ko) * | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
| US7232641B2 (en) | 2003-10-08 | 2007-06-19 | Shin-Etsu Chemical Co., Ltd. | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same |
| JP4143023B2 (ja) * | 2003-11-21 | 2008-09-03 | 株式会社東芝 | パターン形成方法および半導体装置の製造方法 |
| US20060003271A1 (en) * | 2004-06-30 | 2006-01-05 | Clark Shan C | Basic supercritical solutions for quenching and developing photoresists |
| KR100560633B1 (ko) * | 2004-08-16 | 2006-03-17 | 삼성전자주식회사 | 커패시터 제조 방법 |
| KR100575001B1 (ko) * | 2004-12-10 | 2006-04-28 | 삼성전자주식회사 | 상호 결합 없는 이중 포토 리소그라피 방법 |
| EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| DE102005037022A1 (de) * | 2005-06-28 | 2007-01-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender optoelektronischer Halbleiterchip mit einer Diffusionsbarriere |
| JP2007010785A (ja) * | 2005-06-28 | 2007-01-18 | Fujifilm Holdings Corp | 永久パターン形成方法 |
| JP4830596B2 (ja) * | 2006-04-10 | 2011-12-07 | 凸版印刷株式会社 | レジストパターン形成用基板、レジストパターン形成方法およびパネル |
| WO2007148160A2 (en) * | 2006-06-20 | 2007-12-27 | Freescale Semiconductor, Inc. | Method of multi-layer lithography |
| KR20080023814A (ko) * | 2006-09-12 | 2008-03-17 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
| US7568362B2 (en) * | 2006-10-16 | 2009-08-04 | Calibre International, Llc | Bean bag holder to be used to hold a can or bottle |
| EP2420892A1 (en) | 2006-10-30 | 2012-02-22 | Rohm and Haas Electronic Materials LLC | Compositions and processes for immersion lithography |
| KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| JP5270840B2 (ja) * | 2007-01-23 | 2013-08-21 | 東京応化工業株式会社 | パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法 |
| CN100490059C (zh) * | 2007-03-21 | 2009-05-20 | 山东华光光电子有限公司 | 一种高亮度发光二极管芯片的制备方法 |
| US8088566B2 (en) * | 2007-03-26 | 2012-01-03 | Fujifilm Corporation | Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent |
| JP2008268855A (ja) * | 2007-03-26 | 2008-11-06 | Fujifilm Corp | パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 |
| JP4840255B2 (ja) * | 2007-05-29 | 2011-12-21 | Jsr株式会社 | パターン形成方法及びそれに用いる樹脂組成物 |
| US8642474B2 (en) * | 2007-07-10 | 2014-02-04 | Advanced Micro Devices, Inc. | Spacer lithography |
| JP4973876B2 (ja) * | 2007-08-22 | 2012-07-11 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるパターン表面コート材 |
| JP2009053547A (ja) * | 2007-08-28 | 2009-03-12 | Tokyo Ohka Kogyo Co Ltd | パターン形成方法及び被覆膜形成用材料 |
| JP5013119B2 (ja) * | 2007-09-20 | 2012-08-29 | 信越化学工業株式会社 | パターン形成方法並びにこれに用いるレジスト材料 |
| EP2056162B1 (en) | 2007-11-05 | 2016-05-04 | Rohm and Haas Electronic Materials LLC | Process for immersion lithography |
| US7659208B2 (en) * | 2007-12-06 | 2010-02-09 | Micron Technology, Inc | Method for forming high density patterns |
| US7838198B2 (en) * | 2007-12-13 | 2010-11-23 | International Business Machines Corporation | Photoresist compositions and method for multiple exposures with multiple layer resist systems |
| US7838200B2 (en) * | 2007-12-13 | 2010-11-23 | International Business Machines Corporation | Photoresist compositions and method for multiple exposures with multiple layer resist systems |
| JP2009194207A (ja) * | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | パターン形成方法、半導体装置の製造方法及び半導体装置の製造装置 |
| JP5154395B2 (ja) * | 2008-02-28 | 2013-02-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法及びレジスト塗布・現像処理システム |
| EP2101217B1 (en) * | 2008-03-14 | 2011-05-11 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt-containing polymer, resist compositon, and patterning process |
| US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
| US20090253078A1 (en) * | 2008-04-07 | 2009-10-08 | Sokudo Co., Ltd. | Double exposure lithography using low temperature oxide and uv cure process |
| WO2010042159A1 (en) * | 2008-10-06 | 2010-04-15 | Union Carbide Chemicals & Plastics Technology Llc | Methods of making cyclic, n-amino functional triamines |
| KR101523951B1 (ko) * | 2008-10-09 | 2015-06-02 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| JP5071688B2 (ja) * | 2009-02-18 | 2012-11-14 | 信越化学工業株式会社 | パターン形成方法及びレジスト変性用組成物 |
| KR20100117025A (ko) * | 2009-04-23 | 2010-11-02 | 스미또모 가가꾸 가부시키가이샤 | 포토레지스트 패턴 형성 방법 |
| JP5212245B2 (ja) * | 2009-04-23 | 2013-06-19 | 住友化学株式会社 | レジストパターンの製造方法 |
| JP5112380B2 (ja) * | 2009-04-24 | 2013-01-09 | 信越化学工業株式会社 | パターン形成方法 |
| TWI403520B (zh) * | 2009-05-25 | 2013-08-01 | Shinetsu Chemical Co | 光阻改質用組成物及圖案形成方法 |
| JP5545029B2 (ja) * | 2009-05-25 | 2014-07-09 | 信越化学工業株式会社 | レジスト変性用組成物及びパターン形成方法 |
| JP5573356B2 (ja) * | 2009-05-26 | 2014-08-20 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP5698923B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 自己整合型スペーサー多重パターニング方法 |
| JP5698922B2 (ja) | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 電子デバイスを形成する方法 |
| JP2011022187A (ja) * | 2009-07-13 | 2011-02-03 | Konica Minolta Business Technologies Inc | 静電荷像現像用トナー、フルカラートナーキット、画像形成方法 |
| EP2336824A1 (en) | 2009-11-19 | 2011-06-22 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming electronic devices |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008070060A2 (en) * | 2006-12-06 | 2008-06-12 | Fujifilm Electronic Materials U.S.A., Inc. | Device manufacturing process utilizing a double pattering process |
| WO2008143301A1 (ja) * | 2007-05-23 | 2008-11-27 | Jsr Corporation | パターン形成方法及びそれに用いる樹脂組成物 |
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